公开(公告)号：US20190086359A1

公开(公告)日：2019-03-21

申请号：US15912678

申请日：2018-03-06

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Ko YAMADA ,  Hirohisa MIYAMOTO ,  Reiko YOSHIMURA ,  Hiroko NAKAMURA ,  Mitsuhiro OKI ,  Yasushi SHINJO ,  Masaki ATSUTA

IPC分类号： G01N27/414 ,  G01N27/68 ,  G01N33/00

CPC分类号： G01N27/4141 ,  G01N27/4146 ,  G01N27/68 ,  G01N33/0047

摘要： A molecular detection apparatus according to an arrangement includes: a collection unit collecting a detection target gas containing a molecule to be detected; a detector including a detection cell that has an organic probe provided in a sensor unit, the organic probe capturing the collected molecule, and a discriminator discriminating the molecule by a detection signal generated by the molecule being captured by the organic probe of the detection cell. The detection cell has the organic probe including a dicyanovinyl structure or a coumarin structure.

公开(公告)号：US20180172652A1

公开(公告)日：2018-06-21

申请号：US15577397

申请日：2016-05-20

申请人： Nokia Technologies Oy

发明人： Martti VOUTILAINEN

IPC分类号： G01N33/00 ,  G01N27/414 ,  B01D53/22 ,  C25B1/00 ,  C25B9/08

CPC分类号： G01N33/004 ,  B01D53/22 ,  C25B1/00 ,  C25B9/08 ,  G01N27/4141 ,  G01N27/4146 ,  G01N33/0013 ,  H01M4/92 ,  H01M4/923 ,  H01M8/04462 ,  H01M2008/1095

摘要： An apparatus including an oxidation cell configured to oxidize carbon monoxide to produce carbon dioxide; and a sensor configured to detect carbon dioxide produced by the oxidation cell.

公开(公告)号：US20180158934A1

公开(公告)日：2018-06-07

申请号：US15819959

申请日：2017-11-21

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Berend T. Jonker ,  Connie H. Li ,  Kathleen M. McCreary ,  Olaf M.J. van 't Erve

IPC分类号： H01L29/66 ,  H01L33/00 ,  H01L33/04 ,  H01L33/26 ,  H01L29/24 ,  H01L21/02 ,  H01L29/786 ,  G01N27/414

CPC分类号： H01L29/66977 ,  G01N27/4141 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/187 ,  H01L29/24 ,  H01L29/7391 ,  H01L29/778 ,  H01L29/78696 ,  H01L29/861 ,  H01L33/002 ,  H01L33/04 ,  H01L33/26

摘要： The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided.

公开(公告)号：US20180136157A1

公开(公告)日：2018-05-17

申请号：US15854901

申请日：2017-12-27

申请人： FUJITSU LIMITED

发明人： Naoki HARADA ,  Shintaro SATO ,  Kenjiro HAYASHI ,  Junichi YAMAGUCHI

IPC分类号： G01N27/12 ,  G01N33/00

CPC分类号： G01N27/127 ,  G01N27/4141 ,  G01N27/4146 ,  G01N33/0054 ,  Y02A50/246

摘要： A gas sensor includes: a semiconductor layer; a graphene film provided above the semiconductor layer and having at least a portion in contact with gas; and a barrier film between the semiconductor layer and the graphene film.

公开(公告)号：US20180128761A1

公开(公告)日：2018-05-10

申请号：US15804455

申请日：2017-11-06

申请人： EPISTAR CORPORATION

发明人： Kunal KASHYAP ,  Kun-Wei KAO ,  Yih-Hua RENN ,  Meng-Lun TSAI ,  Zong-Xi CHEN ,  Hsin-Mao LIU ,  Jui-Hung YEH ,  Hung-Chi WANG

IPC分类号： G01N27/02 ,  H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L23/34

CPC分类号： G01N27/414 ,  G01N27/02 ,  G01N27/4141 ,  H01L23/3171 ,  H01L23/345 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7786 ,  H01L29/7787

摘要： A sensing device includes a first III-V compound stack and a second III-V compound stack. The first III-V compound stack has a first sensing area, and the second III-V compound stack has a second sensing area. A passivation layer fully covers the second sensing area. The first III-V compound stack is physically separated from the second III-V compound stack, and has material compositions and structures same as the second III-V compound stack.

公开(公告)号：US09945765B2

公开(公告)日：2018-04-17

申请号：US14905384

申请日：2014-06-25

申请人： Provenance Asset Group LLC

发明人： Richard White ,  Stefano Borini

IPC分类号： G01N7/14 ,  G01N27/414 ,  G01L9/00 ,  G01N27/02

CPC分类号： G01N7/14 ,  G01L9/0098 ,  G01N27/02 ,  G01N27/4141

摘要： An apparatus for use in determining the relative vapor pressure of a fluid in an environment in which the apparatus is located, the apparatus comprising a first layer (512) configured to enable a flow of charge carriers from a source electrode (505) to a drain electrode (506), a second layer (513) configured to control the conductance of the first layer (512) using an electric field formed between the first (512) and second layers (513) and a third layer (514) positioned between the first and second layers to prevent a flow of charge carriers therebetween to enable formation of the electric field, wherein the second layer (513) is configured to exhibit a charge distribution on interaction with the fluid, the charge distribution giving rise to the electric field between the first (512) and second (513) layers, and wherein the second layer (513) is configured such that the charge distribution and electric field strength are dependent upon the relative vapor pressure of the fluid in the environment (516), thereby allowing the relative vapor pressure to be derived from a measurement of the conductance of the first layer (512).

公开(公告)号：US20170350852A1

公开(公告)日：2017-12-07

申请号：US15612384

申请日：2017-06-02

申请人： SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

发明人： Jong-Ho LEE ,  Jongmin Shin

IPC分类号： G01N27/414 ,  G01N27/16 ,  G01N27/00

CPC分类号： G01N27/4141 ,  G01N27/002 ,  G01N27/16 ,  G01N33/0031 ,  H01L29/42328 ,  H01L29/788

摘要： “Provided is a pulse operating method for an FET-type sensor having a horizontal floating electrode. The pulse operating method for an FET-type sensor includes a reading preparation step of applying one or more pre-bias voltage pulses (Vpre) to the control electrode and a reading step of applying one or more read-bias voltage pulses (VrCG) to the control electrode and applying a voltage pulse (VrDs) synchronized with the read-bias voltage pulse between a drain and a source. The reactivity and the recovery time can be improved according to the width or the magnitude of the pre-bias voltage pulse applied to the input terminal of the control electrode, and the oxidizing gas and the reducing gas can be distinguished. In addition, since current flows to the FET-type sensor only in the read-biasing period, power consumption can be greatly reduced.”

公开(公告)号：US20170315083A1

公开(公告)日：2017-11-02

申请号：US15523032

申请日：2015-11-04

申请人： Dräger Safety AG & Co. KGaA

发明人： Wolfgang BÄTHER ,  Stefan LEHMANN

IPC分类号： G01N27/414 ,  G01N33/00

CPC分类号： G01N27/4141 ,  G01N33/0047

摘要： A gas sensor 10 has a measuring channel 11 with a gas inlet 12 and with a gas outlet 13, at least one receptor layer 20, a reference electrode 30 and a voltage-controlled analysis unit 50. The reference electrode 30 is capacitively coupled with the receptor layer 20. The reference electrode 30 is connected to the analysis unit 50 in an electrically conductive manner. The receptor layer 20 is formed in measuring channel 11. The measuring channel 11 forms a dielectric layer between the receptor layer 20 and the reference electrode 30. The receptor layer 20 has a support 21 and an analyte-binding layer 22. The present invention provides for the analyte-binding layer 22 to be a self-assembling monolayer (SAM).

公开(公告)号：US20170271602A1

公开(公告)日：2017-09-21

申请号：US15613364

申请日：2017-06-05

申请人： International Business Machines Corporation

发明人： Anthony J. Annunziata ,  Ching-Tzu Chen ,  Joel D. Chudow

IPC分类号： H01L51/05 ,  H01L29/06 ,  H01L21/02 ,  H01L21/283 ,  H01L29/20 ,  H01L29/66 ,  H01L21/04 ,  H01L51/00 ,  H01L21/441 ,  H01L29/786 ,  H01L29/24

CPC分类号： H01L51/0541 ,  G01N27/414 ,  G01N27/4141 ,  G01N27/4146 ,  H01L21/02527 ,  H01L21/0254 ,  H01L21/02568 ,  H01L21/02606 ,  H01L21/043 ,  H01L21/283 ,  H01L21/441 ,  H01L21/7682 ,  H01L23/53276 ,  H01L28/60 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/66045 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/78684 ,  H01L29/78696 ,  H01L43/08 ,  H01L51/0048 ,  H01L51/0558 ,  H01L2221/1094

摘要： Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A substrate is provided. A plurality of metal portions are formed on the substrate, wherein the plurality of metal portions are arranged such that areas of the substrate remain exposed. A thin film layer is deposited on the plurality of metal portions and the exposed areas of the substrate. A dielectric layer is deposited, wherein the dielectric layer is in contact with portions of the thin film layer on the plurality of metal portions, and wherein the dielectric layer is not in contact with portions of the thin film layer on the exposed areas of the substrate such that one or more enclosed spaces are present between the thin film layer on the exposed areas of the substrate and the dielectric layer.

公开(公告)号：US09733209B2

公开(公告)日：2017-08-15

申请号：US14757467

申请日：2015-12-23

申请人： KOREA INSTITUTE OF MACHINERY & MATERIALS

发明人： Dong Gi Seong ,  Kang Eun Lee ,  Moon Kwang Um ,  Won Oh Lee ,  Jea Uk Lee ,  Byung Mun Jung ,  Young Seok Oh

IPC分类号： H01L51/05 ,  G01N27/414 ,  H01L51/10

CPC分类号： G01N27/4141 ,  H01L51/0516 ,  H01L51/0558 ,  H01L51/102 ,  H01L51/105

摘要： Disclosed are an organic semiconductor element, a fabrication method thereof, woven and non-woven fabric structures therewith, and a semiconductor device therewith. The organic semiconductor element comprising an organic semiconductor layer; a linear source electrode and a linear drain electrode provided in the organic semiconductor layer and spaced apart from and parallel to each other; a linear gate electrode provided on the organic semiconductor layer to cross the linear source and drain electrodes; and an electrolyte layer in contact with the organic semiconductor layer and the linear gate electrode.