公开(公告)号：US20140213070A1

公开(公告)日：2014-07-31

申请号：US13834333

申请日：2013-03-15

申请人： Applied Materials, Inc.

发明人： Sukwon Hong ,  Toan Tran ,  Abhijit Mallick ,  Jingmei Liang ,  Nitin K. Ingle

IPC分类号： H01L21/02

CPC分类号： H01L21/02274 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/0234

摘要： Methods of forming a dielectric layer on a substrate are described, and may include introducing a first precursor into a remote plasma region fluidly coupled with a substrate processing region of a substrate processing chamber A plasma may be formed in the remote plasma region to produce plasma effluents. The plasma effluents may be directed into the substrate processing region. A silicon-containing precursor may be introduced into the substrate processing region, and the silicon-containing precursor may include at least one silicon-silicon bond. The plasma effluents and silicon-containing precursor may be reacted in the processing region to form a silicon-based dielectric layer that is initially flowable when formed on the substrate.

摘要翻译： 描述了在基板上形成电介质层的方法，并且可以包括将第一前体引入到与衬底处理室的衬底处理区域流体耦合的远程等离子体区域中。等离子体可以形成在远程等离子体区域中以产生等离子体流出物 。 等离子体流出物可以被引导到基板处理区域中。 可以将含硅前体引入衬底处理区域，并且含硅前体可以包括至少一个硅 - 硅键。 等离子体流出物和含硅前体可以在处理区域中反应以形成当在基底上形成时最初可流动的硅基电介质层。

公开(公告)号：US20140213038A1

公开(公告)日：2014-07-31

申请号：US14016177

申请日：2013-09-02

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Keisuke NAKAZAWA

IPC分类号： H01L21/762 ,  H01L21/02

CPC分类号： H01L21/76224 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/6715

摘要： According to one embodiment, a method of manufacturing a semiconductor device includes providing a substrate, supplying a first liquid including a terpene to a surface of the substrate, supplying a second liquid including a silicon-containing compound to the surface of the substrate, and converting the silicon-containing compound to a silicon oxide compound.

摘要翻译： 根据一个实施例，制造半导体器件的方法包括提供衬底，将包括萜烯的第一液体供应到衬底的表面，将包含含硅化合物的第二液体供应至衬底的表面， 含硅化合物与氧化硅化合物反应。

公开(公告)号：US20140014142A1

公开(公告)日：2014-01-16

申请号：US14024676

申请日：2013-09-12

申请人： Kabushiki Kaisha Toshiba

发明人： Takeshi Hizawa ,  Nobuhide Yamada ,  Yoshihiro Ogawa ,  Masahiro Kiyotoshi

IPC分类号： H01L21/02

CPC分类号： H01L21/02076 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02301 ,  H01L21/02326 ,  H01L21/28273 ,  H01L27/11524

摘要： A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure.

摘要翻译： 公开了一种制造半导体器件的方法，其中绝缘膜填充在蚀刻到工件结构中的图案之间。 该方法包括通过第一化学液体清洁驻留在蚀刻图案之间的蚀刻残留物; 用漂洗液冲洗由第一化学液体清洗的工件结构; 并用用于形成绝缘膜的涂布液涂覆由冲洗液冲洗的工件结构。 在相同的处理室中进行对涂层的清洁，使得在工件结构的图案之间始终存在液体。

公开(公告)号：US08557705B2

公开(公告)日：2013-10-15

申请号：US13236306

申请日：2011-09-19

申请人： Takeshi Hizawa ,  Nobuhide Yamada ,  Yoshihiro Ogawa ,  Masahiro Kiyotoshi

发明人： Takeshi Hizawa ,  Nobuhide Yamada ,  Yoshihiro Ogawa ,  Masahiro Kiyotoshi

IPC分类号： H01L21/311

CPC分类号： H01L21/02076 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02301 ,  H01L21/02326 ,  H01L21/28273 ,  H01L27/11524

摘要： A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure.

公开(公告)号：US08551891B2

公开(公告)日：2013-10-08

申请号：US13527877

申请日：2012-06-20

申请人： Jingmei Liang ,  Lili Ji ,  Nitin K. Ingle

发明人： Jingmei Liang ,  Lili Ji ,  Nitin K. Ingle

IPC分类号： H01L21/31

CPC分类号： C23C16/345 ,  C23C16/452 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02326

摘要： Methods of treating the interior of a plasma region are described. The methods include a preventative maintenance procedure or the start-up of a new substrate processing chamber having a remote plasma system. A new interior surface is exposed within the remote plasma system. The (new) interior surfaces are then treated by sequential steps of (1) forming a remote plasma from hydrogen-containing precursor within the remote plasma system and then (2) exposing the interior surfaces to water vapor. Steps (1)-(2) are repeated at least ten times to complete the burn-in process. Following the treatment of the interior surfaces, a substrate may be transferred into a substrate processing chamber. A dielectric film may then be formed on the substrate by flowing one precursor through the remote plasma source and combining the plasma effluents with a second precursor flowing directly to the substrate processing region.

摘要翻译： 描述了处理等离子体区域内部的方法。 这些方法包括预防性维护程序或启动具有远程等离子体系统的新基板处理室。 新的内表面暴露在远程等离子体系统内。 （新）内表面然后通过（1）在远程等离子体系统内从含氢前体形成远程等离子体的顺序步骤进行处理，然后（2）将内表面暴露于水蒸汽。 步骤（1） - （2）重复至少十次以完成老化过程。 在内表面的处理之后，可以将衬底转移到衬底处理室中。 然后可以通过使一个前体流过远程等离子体源并将等离子体流出物与直接流到衬底处理区的第二前体结合在衬底上形成电介质膜。

公开(公告)号：US08528224B2

公开(公告)日：2013-09-10

申请号：US12854421

申请日：2010-08-11

申请人： Bhadri N. Varadarajan ,  Bart Van Schravendijk

发明人： Bhadri N. Varadarajan ,  Bart Van Schravendijk

IPC分类号： F26B3/34

CPC分类号： H01L21/67115 ,  H01L21/02164 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348

摘要： Systems and methods for processing a substrate include supplying steam in a chamber, arranging a substrate with a deposited layer that includes silicon in the chamber, and directing UV light onto the deposited layer in the presence of the steam for a predetermined conversion period to at least partially convert the deposited layer. Systems and methods for densifying a deposited layer of a substrate include supplying ammonia in a chamber, arranging the substrate that includes the deposited layer in the chamber, and directing UV light onto the deposited layer in the presence of the ammonia for a predetermined conversion period to at least partially densify the deposited layer.

摘要翻译： 用于处理衬底的系统和方法包括在腔室中供应蒸汽，在衬底中布置包括在腔室中的硅的沉积层，以及在存在蒸汽的情况下将UV光引导到沉积层上至少至少 部分转化沉积层。 用于致密化衬底的沉积层的系统和方法包括在室中供应氨，将包括沉积层的衬底布置在腔室中，并且在氨的存在下将UV光引导到沉积层上预定的转换周期 至少部分地致密化沉积层。

公开(公告)号：US20130214383A1

公开(公告)日：2013-08-22

申请号：US13881560

申请日：2011-11-02

申请人： Naoko Nakamoto ,  Katsuchika Suzuki ,  Shinji Sugahara ,  Tatsuro Nagahara

发明人： Naoko Nakamoto ,  Katsuchika Suzuki ,  Shinji Sugahara ,  Tatsuro Nagahara

IPC分类号： H01L21/762 ,  H01L29/06

CPC分类号： H01L21/76224 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/3105 ,  H01L29/0649

摘要： [Problem] To provide a method for forming an isolation structure having a low shrinkage percentage and a low tensile stress.[Means for Solving] A first polysilazane composition containing a porogen is cast on the surface of a substrate to form a coat, and then the coat is fired to form a porous siliceous film having a refractive index of 1.3 or less. Thereafter, the surface of the porous siliceous film is soaked with a second polysilazane composition, and then fired to form an isolation structure of a siliceous film having a refractive index of 1.4 or more.

摘要翻译： 提供一种形成具有低收缩率和低拉伸应力的隔离结构的方法。 [解决方法]将含有致孔剂的第一聚硅氮烷组合物浇铸在基材的表面上以形成涂层，然后将该涂层烧成以形成折射率为1.3以下的多孔硅质膜。 此后，用第二聚硅氮烷组合物浸渍多孔硅质膜的表面，然后烧成形成折射率为1.4以上的硅质膜的隔离结构。

公开(公告)号：US08450218B2

公开(公告)日：2013-05-28

申请号：US13338484

申请日：2011-12-28

申请人： Yunjun Ho ,  Brent Gilgen

发明人： Yunjun Ho ,  Brent Gilgen

IPC分类号： H01L21/31

CPC分类号： H01L21/02164 ,  H01L21/02222 ,  H01L21/02307 ,  H01L21/02326 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76897

摘要： A method of forming silicon oxide includes depositing a silicon nitride-comprising material over a substrate. The silicon nitride-comprising material has an elevationally outermost silicon nitride-comprising surface. Such surface is treated with a fluid that is at least 99.5% H2O by volume. A polysilazane-comprising spin-on dielectric material is formed onto the H2O-treated silicon nitride-comprising surface. The polysilazane-comprising spin-on dielectric material is oxidized to form silicon oxide. Other implementations are contemplated.

摘要翻译： 形成氧化硅的方法包括在衬底上沉积含氮化硅的材料。 包含氮化硅的材料具有最高的最外面的含氮化硅的表面。 这种表面用体积至少为99.5％H 2 O的流体处理。 包含聚硅氮烷的旋涂电介质材料形成在经H2O处理的含氮化硅的表面上。 包含聚硅氮烷的旋涂电介质材料被氧化形成氧化硅。 考虑其他实现。

公开(公告)号：US20120276731A1

公开(公告)日：2012-11-01

申请号：US13095291

申请日：2011-04-27

申请人： Kuo Hui Su ,  Yi Nan Chen ,  Hsien Wen Liu

发明人： Kuo Hui Su ,  Yi Nan Chen ,  Hsien Wen Liu

IPC分类号： H01L21/28

CPC分类号： H01L21/02326 ,  H01L21/02332 ,  H01L21/28185 ,  H01L21/28202

摘要： A method for fabricating a gate dielectric layer comprises the steps of: forming a dielectric layer on a semiconductor substrate; performing a nitrogen treating process to form a nitride layer on the dielectric layer; and performing a thermal treating process at 1150-1400° C. for a period of 400-800 milliseconds, to form a gate dielectric layer. A step of forming a gate layer on the gate dielectric layer may be performed to form a gate structure.

摘要翻译： 一种用于制造栅极电介质层的方法包括以下步骤：在半导体衬底上形成电介质层; 进行氮处理工艺以在介电层上形成氮化物层; 并在1150-1400℃下进行400-800毫秒的热处理工艺以形成栅介质层。 可以在栅极介质层上形成栅极层的步骤以形成栅极结构。

公开(公告)号：US20120252188A1

公开(公告)日：2012-10-04

申请号：US13432151

申请日：2012-03-28

申请人： Ryota YONEZAWA ,  Kazuyoshi Yamazaki ,  Masaki Sano

发明人： Ryota YONEZAWA ,  Kazuyoshi Yamazaki ,  Masaki Sano

IPC分类号： H01L21/762 ,  H01L21/318

CPC分类号： H01L21/02247 ,  C23C8/36 ,  H01L21/02238 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/76224

摘要： A plasma processing method for use in device isolation by shallow trench isolation in which an insulating film is embedded in a trench formed in silicon and the insulating film is planarized to form a device isolation film, the method includes a plasma nitriding the silicon of an inner wall surface of the trench by using a plasma before embedding the insulating film in the trench. The plasma nitriding is performed by using a plasma of a processing gas containing a nitrogen-containing gas under conditions in which a processing pressure ranges from 1.3 Pa to 187 Pa and a ratio of a volumetric flow rate of the nitrogen-containing gas to a volumetric flow rate of the entire processing gas ranges from 1% to 80% such that a silicon nitride film is formed on the inner wall surface of the trench to have a thickness of 1 to 10 nm.

摘要翻译： 一种等离子体处理方法，用于通过浅沟槽隔离的器件隔离，其中将绝缘膜嵌入形成在硅中的沟槽中，并且绝缘膜被平坦化以形成器件隔离膜，该方法包括等离子体氮化内部的硅 在将绝缘膜嵌入沟槽中之前通过使用等离子体的沟槽的壁表面。 在处理压力为1.3Pa〜187Pa的条件下，通过使用含有含氮气体的处理气体的等离子体进行等离子体氮化，并且将含氮气体的体积流量与体积流量 整个处理气体的流量范围为1％至80％，使得在沟槽的内壁表面上形成厚度为1至10nm的氮化硅膜。