公开(公告)号：US07276442B2

公开(公告)日：2007-10-02

申请号：US10820291

申请日：2004-04-08

申请人： Gurtej Sandhu Sandhu ,  Chris Chang Yu

发明人： Gurtej Sandhu Sandhu ,  Chris Chang Yu

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/2885 ,  H01L21/76802 ,  H01L21/76838 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76885 ,  H01L2221/1078

摘要： A method for depositing metal on a semiconductor device having a substrate, an exposed first surface, and an exposed second surface is provided. Metal ions are deposited on the exposed first surface and on the exposed second layer by applying a first voltage between the substrate and an anode in the presence of an electrolytic bath, and metal ions are removed from the exposed first surface by applying a second voltage between the substrate and the anode in the presence of the electrolytic bath. Other aspects and embodiments are provided herein.

摘要翻译： 提供了一种在具有基板，暴露的第一表面和暴露的第二表面的半导体器件上沉积金属的方法。 金属离子通过在存在电解浴的情况下在衬底和阳极之间施加第一电压而沉积在暴露的第一表面和暴露的第二层上，并且通过在暴露的第一表面之间施加第二电压来从暴露的第一表面去除金属离子 基板和阳极在电解槽的存在下。 本文提供了其它方面和实施例。

公开(公告)号：US20070117363A1

公开(公告)日：2007-05-24

申请号：US11638522

申请日：2006-12-14

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

IPC分类号： H01L21/3205 ,  C23C16/00 ,  H01L21/4763

CPC分类号： H01L21/7685 ,  C23C8/36 ,  C23C16/14 ,  C23C16/34 ,  C23C16/40 ,  C23C16/4488 ,  C23C16/452 ,  C23C16/507 ,  C23C16/56 ,  C23F4/00 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76888 ,  H01L2221/1078

摘要： A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

公开(公告)号：US20070087577A1

公开(公告)日：2007-04-19

申请号：US11638511

申请日：2006-12-14

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

IPC分类号： C23F1/00 ,  C23C16/00 ,  H01L21/31

CPC分类号： H01L21/7685 ,  C23C8/36 ,  C23C16/14 ,  C23C16/34 ,  C23C16/40 ,  C23C16/4488 ,  C23C16/452 ,  C23C16/507 ,  C23C16/56 ,  C23F4/00 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76888 ,  H01L2221/1078

摘要： A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

摘要翻译： 在衬底和金属构件之间的室内的位置处产生Cl 2/2气体等离子体。 用Cl 2 H 2气体等离子体蚀刻金属构件以形成前体。 以与容纳基板的室隔离的方式激发氮气。 在被激发的氮和前体之间反应时形成金属氮化物，并在基板上形成膜。 在金属氮化物成膜后，在基板上的金属氮化物上形成前体的金属成分作为膜。 以这种方式，以高速度产生具有优异的埋藏性能和非常小的厚度的阻挡金属膜，其中金属的扩散被抑制并且对金属的粘附性得到改善。

公开(公告)号：US07109115B2

公开(公告)日：2006-09-19

申请号：US11071922

申请日：2005-03-04

申请人： Ravi Iyer ,  Yongjun Jeff Hu ,  Luan Tran ,  Brent Gilgen

发明人： Ravi Iyer ,  Yongjun Jeff Hu ,  Luan Tran ,  Brent Gilgen

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/76846 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/7687 ,  H01L21/76889 ,  H01L23/485 ,  H01L27/10855 ,  H01L28/84 ,  H01L28/90 ,  H01L29/456 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： Various embodiments of the invention described herein reduce contact resistance to a silicon-containing material using a first refractory metal material overlying the silicon-containing material and a second refractory metal material overlying the first refractory metal material. Each refractory metal material is a conductive material containing a refractory metal and an impurity. The first refractory metal material is a metal-rich material, containing a level of its impurity at less than a stoichiometric level. The second refractory metal material has a lower affinity for the impurities than does the first refractory metal material. The second refractory metal material can thus serve as an impurity donor during an anneal or other exposure to heat. This net migration of the impurities to the first refractory metal material limits growth of a metal silicide interface between the first refractory metal material and the underlying silicon-containing material, thereby providing ohmic contact with attendant thermal tolerance.

摘要翻译： 使用覆盖含硅材料的第一耐火金属材料和覆盖第一难熔金属材料的第二难熔金属材料来降低与含硅材料的接触电阻。 每种难熔金属材料是含有难熔金属和杂质的导电材料。 第一难熔金属材料是富含金属的材料，其含量低于化学计量水平的杂质。 与第一难熔金属材料相比，第二难熔金属材料对杂质的亲和力较低。 因此，第二难熔金属材料可以在退火或其它暴露于热的过程中用作杂质供体。 这种杂质向第一难熔金属材料的净迁移限制了第一难熔金属材料和下面的含硅材料之间的金属硅化物界面的生长，从而提供与耐热性的欧姆接触。

公开(公告)号：US07088001B2

公开(公告)日：2006-08-08

申请号：US10844479

申请日：2004-05-13

申请人： Hiroshi Ashihara ,  Tatsuyuki Saito ,  Uitsu Tanaka ,  Hidenori Suzuki ,  Hideaki Tsugane ,  Yasuko Yoshida ,  Ken Okutani

发明人： Hiroshi Ashihara ,  Tatsuyuki Saito ,  Uitsu Tanaka ,  Hidenori Suzuki ,  Hideaki Tsugane ,  Yasuko Yoshida ,  Ken Okutani

IPC分类号： H01L23/48

CPC分类号： H01L21/2855 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76801 ,  H01L21/76804 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76855 ,  H01L21/76877 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to form a good contact between metallizations and improve the reliability and product yield of a semiconductor integrated circuit device, a plug is formed in a contact hole by depositing a first sputter film inside of the contact hole by traditional sputtering, depositing a second sputter film over the first sputter film by long throw sputtering, depositing a W film over the second sputtering film by CVD and removing the first and second sputter films and the W film from the outside of the contact hole. The barrier properties can be improved by constituting a barrier film from the first sputter film and second sputter film which are different in directivity.

摘要翻译： 为了在金属化之间形成良好的接触并提高半导体集成电路器件的可靠性和产品产量，通过传统溅射在接触孔内部沉积第一溅射膜，在接触孔中形成插塞，沉积第二溅射 通过长溅射溅射第一溅射膜上的膜，通过CVD在第二溅射膜上沉积W膜，并从接触孔的外部除去第一和第二溅射膜和W膜。 可以通过从方向性不同的第一溅射膜和第二溅射膜构成阻挡膜来改善阻挡性。

公开(公告)号：US07087522B2

公开(公告)日：2006-08-08

申请号：US10795950

申请日：2004-03-08

申请人： Tue Nguyen

发明人： Tue Nguyen

IPC分类号： H01L21/44

CPC分类号： H01L21/76862 ,  H01L21/28562 ,  H01L21/76886 ,  H01L2221/1078

摘要： A multilayer copper structure has been provided for improving the adhesion of copper to a diffusion barrier material, such as TiN, in an integrated circuit substrate. The multilayer copper structure comprises a thin high-resistive copper layer to provide improved adhesion to the underlying diffusion barrier layer, and a low-resistive copper layer to carry the electrical current with minimum electrical resistance. The invention also provides a method to form the multilayer copper structure.

摘要翻译： 已经提供了一种多层铜结构，用于在集成电路基板中提高铜对诸如TiN的扩散阻挡材料的粘合性。 多层铜结构包括薄的高电阻铜层，以提供对下面的扩散阻挡层的改进的粘合性，以及低电阻铜层以最小的电阻承载电流。 本发明还提供了形成多层铜结构的方法。

公开(公告)号：US07081674B2

公开(公告)日：2006-07-25

申请号：US10866005

申请日：2004-06-11

申请人： Ramanath Ganapathiraman ,  Ravindra S. Kane ,  Gopal Ganesan Pethuraja

发明人： Ramanath Ganapathiraman ,  Ravindra S. Kane ,  Gopal Ganesan Pethuraja

IPC分类号： H01L23/48

CPC分类号： H01L21/02118 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/312 ,  H01L21/32051 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76841 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a diffusion barrier useful in an integrated circuit, which serves to prevent the migration of material from a conductive layer to the underlying substrate and further provides improved adhesion of the conductive layer to the substrate. The diffusion barrier comprises a polymer which is a polyelectrolyte, having both cationic and anionic groups along its backbone chain. Preferred polyelectolyte barriers are polyethyleneimine (PEI) and polyacrylic acid (PAA). Other polyelectrolytes may be used, such as those that contain SH—OH— aromatic groups, or those that can interact with either the metal or the adjacent layers via covalent interactions and cross-linking (e.g., POMA, PSMA). The polymeric layer may be applied in two coatings, so that the amine side chains contact the dielectric (e.g. silicon) substrate and the acidic groups are adjacent to the overlying metallic interconnect (e.g. copper). The diffusion barrier may be made thin, preferably less than 5 nm thick, which is advantageous in devices having high aspect ratios.

摘要翻译： 本发明提供了在集成电路中有用的扩散阻挡层，其用于防止材料从导电层迁移到下面的衬底，并进一步提供导电层与衬底的改善的粘合性。 扩散阻挡层包括聚合物，其是聚电解质，沿其主链具有阳离子和阴离子基团。 优选的聚电解质屏障是聚乙烯亚胺（PEI）和聚丙烯酸（PAA）。 可以使用其它聚电解质，例如含有SH-OH-芳族基团的聚电解质，或可以通过共价相互作用和交联（例如，POMA，PSMA）与金属或相邻层相互作用的那些。 聚合物层可以施加在两个涂层中，使得胺侧链接触电介质（例如硅）衬底，并且酸性基团与上覆的金属互连（例如铜）相邻。 可以使扩散阻挡层变薄，优选小于5nm厚，这在具有高纵横比的器件中是有利的。

公开(公告)号：US20060145269A1

公开(公告)日：2006-07-06

申请号：US11365063

申请日：2006-02-28

申请人： Jung-Wook Kim ,  Hyeon-Deok Lee ,  In-Sun Park ,  Ji-Soon Park

发明人： Jung-Wook Kim ,  Hyeon-Deok Lee ,  In-Sun Park ,  Ji-Soon Park

IPC分类号： H01L29/94 ,  H01L23/48

CPC分类号： H01L23/485 ,  H01L21/76841 ,  H01L21/7685 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device, and a method of fabricating the same, includes cobalt as a capping layer. An interconnection structure of the semiconductor device has an improved via resistance. In the semiconductor device, a single cobalt layer or a composite film including a cobalt layer and a titanium nitride layer is used as the capping layer of a metal layer.

公开(公告)号：US07038318B2

公开(公告)日：2006-05-02

申请号：US10689894

申请日：2003-10-21

申请人： Ravi Iyer ,  Yongjun Jeff Hu ,  Luan Tran ,  Brent Gilgen

发明人： Ravi Iyer ,  Yongjun Jeff Hu ,  Luan Tran ,  Brent Gilgen

IPC分类号： H01L29/40

CPC分类号： H01L21/76846 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/7687 ,  H01L21/76889 ,  H01L23/485 ,  H01L27/10855 ,  H01L28/84 ,  H01L28/90 ,  H01L29/456 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： Various embodiments of the invention described herein reduce contact resistance to a silicon-containing material using a first refractory metal material overlying the silicon-containing material and a second refractory metal material overlying the first refractory metal material. Each refractory metal material is a conductive material containing a refractory metal and an impurity. The first refractory metal material is a metal-rich material, containing a level of its impurity at less than a stoichiometric level. The second refractory metal material has a lower affinity for the impurities than does the first refractory metal material. The second refractory metal material can thus serve as an impurity donor during an anneal or other exposure to heat. This net migration of the impurities to the first refractory metal material limits growth of a metal silicide interface between the first refractory metal material and the underlying silicon-containing material, thereby providing ohmic contact with attendant thermal tolerance.

公开(公告)号：US20060068104A1

公开(公告)日：2006-03-30

申请号：US11231962

申请日：2005-09-22

申请人： Tadahiro Ishizaka ,  Yasuhiro Oshima ,  Naoki Yoshii ,  Takashi Shigeoka ,  Kohei Kawamura ,  Yukio Fukuda ,  Yasuhiko Kojima

发明人： Tadahiro Ishizaka ,  Yasuhiro Oshima ,  Naoki Yoshii ,  Takashi Shigeoka ,  Kohei Kawamura ,  Yukio Fukuda ,  Yasuhiko Kojima

IPC分类号： C23C16/00

CPC分类号： C23C16/34 ,  C23C16/45529 ,  C23C16/45542 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/7685 ,  H01L2221/1078

摘要： A film fabrication method for forming a film over a substrate in a processing chamber includes a first film formation process and a second film formation process. In the first film formation process, (a) a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber, and (b) a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber, are repeated a predetermined number of times. In the second film formation process, (c) a third step of supplying a third source gas containing a metal halide compound into the chamber and then removing the third gas from the chamber, and (d) a fourth step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound into the chamber and then removing the fourth source gas from the chamber, are repeated a predetermined number of times.

摘要翻译： 用于在处理室中在基板上形成膜的膜制造方法包括第一成膜工艺和第二成膜工艺。 在第一成膜方法中，（a）第一步骤，将含有金属 - 有机化合物的第一源气体不含卤素元素供应到室中，然后从室除去第一源气体，和（b） 将包含氢或氢化合物的第二源气体供应到室中，然后从室除去第二源气体的第二步骤重复预定次数。 在第二成膜方法中，（c）第三步骤，将含有金属卤化物的第三源气体供应到室中，然后从室中除去第三气体，以及（d）第四步骤， 将包含氢或氢化合物的第四源气体进入室，然后从室除去第四源气体，重复预定次数。