公开(公告)号：US20170373107A1

公开(公告)日：2017-12-28

申请号：US15544645

申请日：2016-01-15

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Fumihiko KOGA

IPC: H01L27/146 ,  H04N5/3745 ,  H04N5/232 ,  H04N5/351 ,  H01L27/30

CPC classification number: H01L27/14612 ,  H01L27/146 ,  H01L27/14647 ,  H01L27/307 ,  H04N5/23216 ,  H04N5/351 ,  H04N5/374 ,  H04N5/3745

Abstract: The present technology relates to a solid-state image sensing device capable of restricting a deterioration in photoelectric conversion characteristic of a photoelectric conversion unit, and an electronic device. A solid-state image sensing device includes: a photoelectric conversion unit formed outside a semiconductor substrate; a charge holding unit for holding signal charges generated by the photoelectric conversion unit; a reset transistor for resetting the potential of the charge holding unit; a capacitance switching transistor connected to the charge holding unit and directed for switching the capacitance of the charge holding unit; and an additional capacitance device connected to the capacitance switching transistor. The present technology is applicable to solid-state image sensing devices and the like, for example.

公开(公告)号：US20170358614A1

公开(公告)日：2017-12-14

申请号：US15541105

申请日：2016-01-08

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： KENJI AZAMI ,  YUSUKE OTAKE ,  TOSHIFUMI WAKANO

IPC: H01L27/146 ,  H04N5/369 ,  H04N9/07 ,  H01L27/15

CPC classification number: H01L27/14605 ,  H01L27/14 ,  H01L27/146 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14689 ,  H01L27/156 ,  H04N5/369 ,  H04N5/378 ,  H04N9/045 ,  H04N9/07 ,  H04N2209/045

Abstract: The present technology relates to a solid-state imaging device that can achieve a higher resolution while increasing sensitivity, and an electronic apparatus. In a pixel array unit, pixels are two-dimensionally arranged, and the pixels are formed with a combination of: a first pixel that performs photoelectric conversion on light of a first color component with a first photoelectric conversion unit, and photoelectric conversion on light of a third color component with a second photoelectric conversion unit, the light of the third color component having passed through a first color filter and the first photoelectric conversion unit, the first color filter being designed to pass light of a second color component; a second pixel that performs photoelectric conversion on light of the first color component with a first photoelectric conversion unit, and photoelectric conversion on light of a fifth color component with a second photoelectric conversion unit, the light of the fifth color component having passed through a second color filter and the first photoelectric conversion unit, the second color filter being designed to pass light of a fourth color component; and a third pixel that performs photoelectric conversion on light of the first color component with a first photoelectric conversion unit, and photoelectric conversion on light of a sixth color component with a second photoelectric conversion unit, the light of the sixth color component having passed through the first photoelectric conversion unit. The first color component and the sixth color component are mixed, to generate white (W).

公开(公告)号：US09838620B2

公开(公告)日：2017-12-05

申请号：US15404908

申请日：2017-01-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Calvin Yi-Ping Chao ,  Kuo-Yu Chou ,  Chih-Min Liu

IPC: H01L27/146 ,  H04N5/33 ,  G06T7/50 ,  H04N5/225 ,  H04N9/04 ,  H04N5/247

CPC classification number: H04N5/332 ,  G06T7/50 ,  H01L27/146 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14689 ,  H01L27/1469 ,  H04N5/2253 ,  H04N5/247 ,  H04N5/3696 ,  H04N5/3745 ,  H04N5/37452 ,  H04N9/045 ,  H04N2209/045

Abstract: A sensor includes a plurality of image sensors, wherein each image sensor of the plurality of image sensors is configured to detect a first spectrum of light. The sensor further includes a depth sensing pixel bonded to each image sensor of the plurality of image sensors, wherein the depth sensing pixel is configured to detect a second spectrum of light different from the first spectrum.

公开(公告)号：US20170315244A1

公开(公告)日：2017-11-02

申请号：US15528102

申请日：2015-11-16

Applicant: Sharp Kabushiki Kaisha

Inventor： KAZUATSU ITO ,  SHIGEYASU MORI ,  TADAYOSHI MIYAMOTO ,  KAORU YAMAMOTO

IPC: G01T1/24 ,  H01L31/02 ,  H01L31/032 ,  H01L31/119

CPC classification number: G01T1/24 ,  H01L27/144 ,  H01L27/146 ,  H01L29/786 ,  H01L31/02019 ,  H01L31/032 ,  H01L31/085 ,  H01L31/119 ,  H04N5/32

Abstract: The invention provides a detection device including a fewer types of elements for detection of radial rays and configured to appropriately detect the radial rays. A detection device 1 includes a light source 30 configured to emit radial rays, a detection circuit board 10 provided with a plurality of detection circuits each configured to output a signal according to a control signal supplied from a driving circuit 201, and a signal reading circuit 202 configured to acquire the signals outputted from the plurality of detection circuits. The detection circuits each include a detection thin film transistor having threshold voltage varied in accordance with irradiation of the radial rays. The signal reading circuit 202 transmits, to an image processing device 40, a difference between a signal outputted from each of the detection circuits in accordance with a control signal supplied before irradiation of the radial rays and a signal outputted from the detection circuit in accordance with a control signal supplied after irradiation of the radial rays.

公开(公告)号：US20170276547A1

公开(公告)日：2017-09-28

申请号：US15508811

申请日：2016-07-15

Applicant: IMRA JAPAN KABUSHIKI KAISHA

Inventor： Vu Chung HOANG ,  Koki HAYASHI ,  Yasuo ITO

IPC: G01J3/51 ,  G01N21/25 ,  G01J3/02

CPC classification number: G01J3/51 ,  G01J3/021 ,  G01J3/2803 ,  G01J9/00 ,  G01N21/255 ,  G01N2021/258 ,  H01G9/20 ,  H01L27/146 ,  H01L31/02327 ,  H01L31/032 ,  H01L31/08 ,  H01L31/09

Abstract: A photoelectric conversion element is realized in which the movement direction of electrons in the element changes according to the wavelength of light to be converted. A photoelectric conversion unit includes an active layer on which light to be converted is incident, an intermediate layer that is arranged on the active layer on a side opposite to the side on which the light to be converted is incident, and a reflection layer that is arranged so as to oppose the active layer with the intermediate layer interposed therebetween. The active layer includes a plasmonic material, which is a material in which plasmon resonance occurs due to a reciprocal action with the light to be converted. The intermediate layer has both a semiconductor property and transparency with respect to the light to be converted. The reflection layer has reflectivity with respect to the light to be converted.

公开(公告)号：US20170236859A1

公开(公告)日：2017-08-17

申请号：US15502821

申请日：2015-08-06

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Yusuke OTAKE ,  Toshifumi WAKANO ,  Takuya SANO ,  Yusuke TANAKA ,  Keiji TATANI ,  Hideo HARIFUCHI ,  Eiichi TAUCHI ,  Hiroki IWASHITA ,  Akira MATSUMOTO

IPC: H01L27/146 ,  H01L29/423 ,  H01L29/10

CPC classification number: H01L27/14612 ,  H01L27/146 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/14687 ,  H01L29/1033 ,  H01L29/42372

Abstract: The present disclosure relates to a solid-state imaging device and an electronic device that are configured to suppress the occurrence of noise and white blemishes in an amplification transistor having an element separation region which is formed by ion implantation. An amplification transistor has an element separation region formed by ion implantation. A channel region insulating film which is at least a part of a gate insulating film above a channel region of the amplification transistor is thin compared to a gate insulating film of a selection transistor, and an element separation region insulating film which is at least a part of a gate insulating film above the element separation region of the amplification transistor is thick compared to the channel region insulating film. The present disclosure can be applied to, for example, a CMOS image sensor, etc.

公开(公告)号：US20170236856A1

公开(公告)日：2017-08-17

申请号：US15501506

申请日：2015-07-30

Applicant: Sharp Kabushiki Kaisha

Inventor： Kazuhide TOMIYASU ,  Tadayoshi MIYAMOTO

IPC: H01L27/146 ,  H04N5/32 ,  G01T1/20

CPC classification number: H01L27/14603 ,  G01T1/2018 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/1225 ,  H01L27/144 ,  H01L27/146 ,  H01L27/14616 ,  H01L27/14636 ,  H01L27/14663 ,  H01L27/14689 ,  H01L29/78693 ,  H04N5/32

Abstract: It is an object of the invention to secure a large area of a photodiode and suppress operation property variation and malfunction in an imaging panel and an X-ray imaging device. An imaging panel (10) includes a substrate (40), a TFT (14), an interlayer insulating film (44), a metal layer (45), and a photodiode (15). A data line (12) and the photodiode (15) face each other in a thickness direction of the substrate. The interlayer insulating film (44), which is disposed between the TFT (14) and the photodiode (15), is an SOG film or a photosensitive resin film.

公开(公告)号：US09732380B2

公开(公告)日：2017-08-15

申请号：US14665567

申请日：2015-03-23

Applicant: Canon U.S. Life Sciences, Inc.

Inventor： Kenton C. Hasson ,  Gregory A. Dale ,  John P. Keady

IPC: G01N21/64 ,  C12Q1/68 ,  H01L27/146 ,  B01L3/00

CPC classification number: C12Q1/686 ,  B01L3/5027 ,  G01N21/6452 ,  G01N21/6454 ,  G01N21/6456 ,  H01L27/146

Abstract: The present invention relates to systems and methods for monitoring the amplification of DNA molecules and the dissociation behavior of the DNA molecules.

公开(公告)号：US20170229598A1

公开(公告)日：2017-08-10

申请号：US15428070

申请日：2017-02-08

Applicant: ams AG

Inventor： Georg ROEHRER

IPC: H01L31/107 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/107 ,  G01T1/24 ,  H01L27/1443 ,  H01L27/146 ,  H01L31/035272 ,  H01L31/1864

Abstract: A method for manufacturing a semiconductor element comprising a single photon avalanche diode having a multiplication zone (AR) a guard ring structure with a second type of electrical conductivity comprises providing a semiconductor wafer with a first region (R) comprising a semiconductor material with the first type of conductivity. The method further comprises generating by a first doping process a first well (W1) of the guard ring structure having a first vertical depth, the first well (W1) laterally surrounding the multiplication zone (AR) and having a lateral distance (A) from the multiplication zone (AR). The method further comprises generating by a second doping process a second well (W2) of the guard ring structure having a second vertical depth, the second well (W2) laterally surrounding and adjoining a part of the first region for laterally defining the multiplication zone (AR).

公开(公告)号：US20170211926A1

公开(公告)日：2017-07-27

申请号：US15482126

申请日：2017-04-07

Applicant: Rememdia LC

Inventor： Fraser M. Smith

IPC: G01B11/00 ,  H01L27/146 ,  G01D5/26

CPC classification number: G01B11/002 ,  G01B11/14 ,  G01B11/16 ,  G01D5/26 ,  G01D5/262 ,  G01J1/0266 ,  G01J1/0271 ,  G01L1/24 ,  G01P3/36 ,  G01P15/093 ,  H01L27/146 ,  H01L27/14643

Abstract: A sensor is disclosed that provides measurements in multiple degrees of freedom without significantly increasing size, complexity, or cost. The sensor can include a light component in support of a first light source operable to direct a first beam of light, and a second light source operable to direct a second beam of light. The sensor can also include an imaging device that can directly receive the first beam of light and the second beam of light and convert these into electric signals. The imaging device and the light component can be movable relative to one another. The sensor can further include a light location module and/or a position module configured to receive the electric signals and determine locations of the first beam of light, the second beam of light on the imaging device and a relative position of the imaging device and the light component.