公开(公告)号：US20140326943A1

公开(公告)日：2014-11-06

申请号：US14234328

申请日：2012-07-20

Applicant: Jean-Claude Jacquet ,  Raphaël Aubry ,  Marie-Antoinette Poisson ,  Sylvain Delage

Inventor： Jean-Claude Jacquet ,  Raphaël Aubry ,  Marie-Antoinette Poisson ,  Sylvain Delage

IPC: H01J1/308

CPC classification number: H01J1/308 ,  H01J23/04

Abstract: A semiconductor device for electron emission in a vacuum comprises a stack of two or more semi-conductor layers of N and P type according to sequence N/(P)/N forming a juxtaposition of two head-to-tail NP junctions, in materials belonging to the III-N family, two adjacent layers forming an interface. The semiconductor materials of the layers of the stack close to the vacuum, where the electrons reach a high energy, have a band gap Eg>c/2, where c is the electron affinity of the semiconductor material, the P-type semiconductor layer being obtained partially or completely, by doping impurities of acceptor type or by piezoelectric effect to exhibit a negative fixed charge in any interface between the layers, a positive bias potential applied to the stack supplying, to a fraction of electrons circulating in the stack, the energy needed for emission in the vacuum by an emissive zone of an output layer.

Abstract translation: 用于真空中电子发射的半导体器件包括根据序列N /（P）/ N的两个或多个N型和P型半导体层的堆叠，形成两个头对尾NP结的并置，材料 属于III-N族，两个相邻的层形成界面。 靠近真空的堆叠层的半导体材料，其中电子达到高能量，具有带隙Eg> c / 2，其中c是半导体材料的电子亲和力，P型半导体层是 通过掺杂受体类型的杂质或通过压电效应来获得部分或完全地获得，以在层之间的任何界面中显示负的固定电荷，施加到堆叠的积极偏置电势提供给堆叠中循环的一部分电子， 需要通过输出层的发射区在真空中发射。

公开(公告)号：US20130248815A1

公开(公告)日：2013-09-26

申请号：US13849139

申请日：2013-03-22

Applicant: SANKEN ELECTRIC CO., LTD. ,  HAMAMATSU PHOTONICS K.K.

Inventor： Shunro FUKE ,  Tetsuji MATSUO ,  Yoshihiro ISHIGAMI ,  Tokuaki NIHASHI

IPC: H01J1/308 ,  H01J9/02

CPC classification number: H01J1/308 ,  H01J1/34 ,  H01J9/025 ,  H01J9/12 ,  H01J31/26 ,  H01J31/507

Abstract: A semiconductor photocathode includes an AlXGa1-XN layer (0≦X

Abstract translation: 半导体光电阴极包括通过SiO 2层和形成在AlXGa1-XN层上的含碱金属的层结合到玻璃基板上的AlXGa1-XN层（0 @ X <1）。 AlXGa1-XN层包括第一区域，第二区域，第一区域和第二区域之间的中间区域。 第二区域具有通过交替层叠阻挡层和阱层而形成的半导体超晶格结构，中间区域具有通过交替层压阻挡层和阱层而形成的半导体超晶格结构。 当一对相邻的阻挡层和阱层被定义为单位部分时，单位部分中Al的组成比X的平均值随着距离第二区域和SiO 2层之间的界面位置的距离而至少在 中间区域。

公开(公告)号：US20050264157A1

公开(公告)日：2005-12-01

申请号：US11140222

申请日：2005-05-31

Applicant: Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

Inventor： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

IPC: H01J61/06 ,  H01J1/00 ,  H01J1/05 ,  H01J1/14 ,  H01J1/308 ,  H01J61/067 ,  H01J61/073

CPC classification number: H01J1/308 ,  H01J61/0677 ,  H01J61/0737

Abstract: A discharge lamp encompassing a sealed-off tube filled with a discharge gas and a discharge electrode provided in the sealed-off tube. The discharge electrode embraces a supporting base and an electron-emitting layer formed of a wide bandgap semiconductor and provided on the supporting base, implemented by a plurality of protrusions, at least part of surfaces of the protrusions are unseen from a perpendicular direction to thereof above a top surface of the electron-emitting layer, dangling bonds of the wide bandgap semiconductor at the surfaces are terminated with hydrogen atoms.

Abstract translation: 一种放电灯，包括填充有放电气体的封闭管和设置在密封管中的放电电极。 放电电极包括支撑基底和由宽带隙半导体形成的电子发射层，并且设置在由多个突起构成的支撑基底上，突起的至少一部分表面从其上方的垂直方向看不见 电子发射层的顶表面，表面处的宽带隙半导体的悬挂键被氢原子终止。

公开(公告)号：US20050133735A1

公开(公告)日：2005-06-23

申请号：US10952477

申请日：2004-09-29

Applicant: Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

Inventor： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC: H01J1/304 ,  H01J1/308 ,  H01J63/02 ,  G21G5/00

CPC classification number: H01J63/02 ,  H01J1/3044 ,  H01J1/308

Abstract: The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.

Abstract translation: 本发明涉及具有有效发射电子的结构的电子发射器件。 电子发射器件具有由n型金刚石构成的衬底和设置在衬底上的尖突起。 突起包括设置在基板侧的基座和设置在基座上并从其尖端发射电子的电子发射部分。 底座由n型钻石组成。 电子发射部分由p型金刚石构成。 从突起（电子发射部分）的尖端到基底和电子发射部分之间的界面的长度优选为100nm以下。

公开(公告)号：US06847045B2

公开(公告)日：2005-01-25

申请号：US09975297

申请日：2001-10-12

Applicant: Viatcheslav V. Ossipov ,  Alexandre M. Bratkovski ,  Henryk Birecki

Inventor： Viatcheslav V. Ossipov ,  Alexandre M. Bratkovski ,  Henryk Birecki

IPC: H01J1/308 ,  H01J1/312 ,  H01L29/06 ,  H01L29/12

CPC classification number: B82Y10/00 ,  H01J1/308 ,  H01J1/312

Abstract: A cold electron emitter may include a heavily a p-doped semiconductor, and dielectric layer, and a metallic layer (p-D-M structure). A modification of this structure includes a heavily n+ doped region below the p region (n+-p-D-M structure). These structures make it possible to combine high current emission with stable (durable) operation. The high current density is possible since under certain voltage drop across the dielectric layer, effective negative electron affinity is realized for the quasi-equilibrium “cold” electrons accumulated in the depletion layer in the p-region next to the dielectric layer. These electrons are generated as a result of the avalanche in the p-D-M structure or injection processes in the n+-p-D-M structure. These emitters are stable since they make use of relatively low extracting field in the vacuum region and are not affected by contamination and absorption from accelerated ions. In addition, the structures may be fabricated with current state-of-the-art technology.

Abstract translation: 冷电子发射器可以包括大量p掺杂的半导体和介电层，以及金属层（p-D-M结构）。 该结构的修改包括p区下面的n +掺杂区域（n + -p-D-M结构）。 这些结构使得可以将高电流发射与稳定（耐用）操作相结合。 高电流密度是可能的，因为在电介质层两端的某些电压降下，实现了与介质层相邻的p区中累积在耗尽层中的准平衡“冷”电子的有效负电子亲和力。 这些电子是由于p-D-M结构中的雪崩或n + -p-D-M结构中的注入过程而产生的。 这些发射体是稳定的，因为它们在真空区域中使用相对低的提取场，并且不受加速离子的污染和吸收的影响。 此外，结构可以用当前最先进的技术制造。

公开(公告)号：US6140664A

公开(公告)日：2000-10-31

申请号：US408088

申请日：1995-03-21

Applicant: Evert Seevinck ,  Tjerk G. Spanjer

Inventor： Evert Seevinck ,  Tjerk G. Spanjer

IPC: H01J1/308 ,  H01J1/30 ,  H01J29/04 ,  H01J29/50 ,  H01L29/12

CPC classification number: H01J1/308 ,  H01J29/04 ,  H01J2201/319

Abstract: To prevent breakdown of an insulating layer located underneath a gate electrode, the gate electrode is connected to an external terminal via a high-ohmic resistor. The high-ohmic resistor may form part of a resistive network for biasing voltages for a plurality of gate electrodes. The resistive network may be realised partly on the insulating layer.

Abstract translation: 为了防止位于栅电极下方的绝缘层的击穿，栅电极通过高欧姆电阻连接到外部端子。 高欧姆电阻可以形成用于多个栅电极的偏置电压的电阻网络的一部分。 电阻网络可以部分地实现在绝缘层上。

公开(公告)号：US6084340A

公开(公告)日：2000-07-04

申请号：US253082

申请日：1999-02-19

Applicant: Peter Bachmann ,  Detlef Wiechert ,  Klaus Rademacher ,  Howard Wilson

Inventor： Peter Bachmann ,  Detlef Wiechert ,  Klaus Rademacher ,  Howard Wilson

IPC: H01J1/30 ,  H01J1/308 ,  H01J1/05 ,  H01J1/02 ,  H01J1/16 ,  H01J63/04

CPC classification number: H01J1/308 ,  H01J2201/30457

Abstract: In an electron-emitting component with a cold cathode comprising a substrate and a cover layer with a diamond-containing material consisting of nano-crystalline diamond having a Raman spectrum with three lines, i.e. at K=1334.+-.4 cm.sup.-1 with a half-width value of 12.+-.6 cm.sup.-1, at K=1140.+-.20 cm.sup.-1 and at K=1470.+-.20 cm.sup.-1, the cold cathode exhibits a low extraction field strength, a stable emission at pressures below 10.sup.-4 mbar, a steep current-voltage characteristic and stable emission currents in excess of 1 microampere/mm.sup.2. The electron emission of the component demonstrates a long-time stability, and a constant intensity of the electron beam across its cross-section.

Abstract translation: 在具有冷阴极的电子发射部件中，包括基底和具有含金刚石材料的覆盖层，所述金刚石材料由具有三条线的拉曼光谱的纳米晶体金刚石组成，即在K = 1334 +/- 4cm -1处， 在K = 1140 +/- 20cm -1处，在K = 1470 +/- 20cm -1处的半值宽度为12 +/- 6cm -1，冷阴极表现出较低的提取场强， 在低于10-4毫巴的压力下稳定发射，电流电压特性曲线陡峭，发射电流稳定在1微安/毫米2以上。 元件的电子发射表现出长时间的稳定性，电子束横截面的恒定强度。

公开(公告)号：US6014118A

公开(公告)日：2000-01-11

申请号：US906641

申请日：1997-08-07

Applicant: Jon K. Edwards ,  Constantine N. Anagnostopoulos

Inventor： Jon K. Edwards ,  Constantine N. Anagnostopoulos

IPC: B41J2/44 ,  G06K15/12 ,  G09G3/20 ,  G09G3/22 ,  H01J1/308 ,  H01J31/12 ,  H04N1/036

CPC classification number: H01J31/12 ,  G06K15/1238 ,  G09G3/22 ,  H01J1/308 ,  G09G3/20

Abstract: Image source, for converting image data in the form of serial charges into a high-resolution imagewise light pattern, combines semiconductor charge-coupled devices for receiving the charges, associated small-scale field emission arrays for converting the charges to imagewise pattern of electron emissions, an electron multiplier for intensifying the electron emissions, and a luminescent phosphor layer susceptible to light output according to the impact of the intensified electron emission. The light output may be directed onto a photosensitive image recording medium to provide for image recording. Second and third embodiments of the contemplated image source provide light output that forms an image to be viewed directly.

Abstract translation: 用于将以串行电荷的形式的图像数据转换为高分辨率成像光图案的图像源组合用于接收电荷的半导体电荷耦合器件，用于将电荷转换成电子发射的成像模式的相关联的小尺度场发射阵列 ，用于增强电子发射的电子倍增器，以及根据强化的电子发射的影响对光输出敏感的发光荧光体层。 光输出可以被引导到感光图像记录介质上以提供图像记录。 预期图像源的第二和第三实施例提供形成要直接观看的图像的光输出。

公开(公告)号：US5952772A

公开(公告)日：1999-09-14

申请号：US10063

申请日：1998-01-21

Applicant: Neil Anthony Fox ,  Wang Nang Wang

Inventor： Neil Anthony Fox ,  Wang Nang Wang

IPC: H01J1/308 ,  H01J1/304 ,  H01J1/312 ,  H01J17/06 ,  H01J61/067 ,  H01J63/02 ,  H01J63/08 ,  H01J29/46

CPC classification number: H01J1/304 ,  H01J17/066 ,  H01J61/0677 ,  H01J2201/30457 ,  H01J61/78

Abstract: An electron emitter (2) has a semiconductor substrate (20) doped with an n-type region (21). A diamond layer (24) is doped by ion implantation with a p-type dopant to form a graded dopant profile region (27) that increases away from the upper surface of the diamond layer (24) and a thin insulating region (28) separating the p-type region (27) from the n-type region (21). The emitter (2) has a first electrical contact (23) on a lower surface of the substrate (20) and a second electrical contact (25) on the upper surface of the diamond layer (24) such that a voltage can be applied across the emitter (2) to cause tunneling of electrons from the n-type region (21) through the insulating region (28) into the p-type region (27), causing emission of electrons from an exposed surface (29). A lamp or display (1) includes several such electron emitters (2) and contains gas at reduced pressure, which is ionized by the emitted electrons, thereby generating UV radiation, which causes a fluorescent layer (5) on a transparent window (3) to produce visible light.

Abstract translation: 电子发射体（2）具有掺杂有n型区域（21）的半导体衬底（20）。 金刚石层（24）通过用p型掺杂剂的离子注入掺杂以形成从金刚石层（24）的上表面增加的渐变掺杂物分布区域（27）和分离的薄绝缘区域（28） 来自n型区域（21）的p型区域（27）。 发射极（2）在衬底（20）的下表面上具有第一电接触（23），并且在金刚石层（24）的上表面上具有第二电接触（25），使得可跨越 所述发射极（2）使电子从所述n型区域（21）穿过所述绝缘区域（22）穿透到所述p型区域（27）中，从而暴露出来的表面（29）发射电子。 灯或显示器（1）包括几个这样的电子发射器（2），并且包含减压的气体，其被发射的电子电离，从而产生紫外线辐射，其在透明窗口（3）上引起荧光层（5） 以产生可见光。

公开(公告)号：US5831380A

公开(公告)日：1998-11-03

申请号：US709405

申请日：1996-09-04

Applicant: Tom Van Zutphen ,  Frederik C. Gehring

Inventor： Tom Van Zutphen ,  Frederik C. Gehring

IPC: H01J3/02 ,  H01J1/30 ,  H01J1/308 ,  H01J1/46 ,  H01J3/40 ,  H01J29/04 ,  H01J29/48 ,  H01J29/50 ,  H01J29/84 ,  H01J29/20 ,  H01J29/70

CPC classification number: H01J29/488 ,  H01J29/04 ,  H01J2201/308

Abstract: An electron has an electron-emitting region, a longitudinal axis and an arrangement of apertured electron grids along the axis. A first grid has an aperture for passing electrons, which aperture is located further outwards with respect to the longitudinal axis than the emitting region. One of the other grids is provided with a shield so as to shield the edge wall of the aperture, if it is located within direct view of the electron-emitting region, from incidence of positive ions.

Abstract translation: 电子具有电子发射区域，纵向轴线和沿轴线的多孔电子栅极的布置。 第一栅格具有用于通过电子的孔，该孔比发射区相对于纵轴更向外定位。 其他栅格中的一个设置有屏蔽件，以便如果它位于电子发射区域的直视图内，则遮挡孔的边缘壁不会发生阳离子的入射。