公开(公告)号：US20240191350A1

公开(公告)日：2024-06-13

申请号：US18556075

申请日：2022-04-20

Applicant: Lam Research Corporation

Inventor： Ching-Yun Chang ,  Jeongseok Ha ,  Pei-Chi Liu

IPC: C23C16/44 ,  C23C16/52

CPC classification number: C23C16/4405 ,  C23C16/52

Abstract: Techniques described herein relate to methods and apparatus for minimizing tin oxide chamber clean time. In many cases, the chamber is a deposition chamber used for depositing tin oxide on semiconductor substrates. The techniques involve exposing the chamber surface to a first plasma generated from a first plasma generation gas including reducing chemistry to reduce the tin oxide to tin, and then exposing the chamber surface to a second plasma generated from a second plasma generation gas including reducing chemistry and organic additive chemistry to remove the tin from the chamber surface. In some cases, the first plasma used to reduce the tin oxide to tin further includes inert gas.

公开(公告)号：US20240186112A1

公开(公告)日：2024-06-06

申请号：US18415492

申请日：2024-01-17

Applicant: Lam Research Corporation

Inventor： Ranadeep Bhowmick ,  John Holland ,  Felix Leib Kozakevich ,  Bing Ji ,  Alexei Marakhtanov

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32128 ,  H01J37/32165 ,  H01J37/32926

Abstract: A method for optimizing delivery of power to a plasma chamber is described. The method includes dividing each cycle of a low frequency (LF) radio frequency generator (RFG) into multiple time intervals. During each of the time intervals, a frequency offset of a high frequency (HF) RFG is generated for which the delivery of power is maximized. The frequency offsets provide a substantially inverse relationship compared to a voltage signal of the LF RFG for each cycle of the voltage signal. The frequency offsets for the time intervals are multiples of the low frequency. The substantially inverse relationship facilitates an increase in the delivery of power to the electrode. A total range of the frequency offsets from a reference HF frequency over the LF RF cycle depends on a power ratio of power that is supplied by the LF RFG and power that is supplied by the HF RFG.

公开(公告)号：US20240186111A1

公开(公告)日：2024-06-06

申请号：US18440583

申请日：2024-02-13

Applicant: Lam Research Corporation

Inventor： Arthur M. Howald ,  John C. Valcore, JR.

IPC: H01J37/32

CPC classification number: H01J37/32155 ,  H01J37/32183

Abstract: Systems and methods for tuning a megahertz radio frequency (RF) generator within a cycle of operation of a kilohertz (kHz) RF generator are described. In one of the methods, a predetermined periodic waveform is provided to a processor. The processor uses a computer-based model to determine plurality of frequency parameters for the predetermined periodic waveform. The frequency parameters are applied to the megahertz RF generator to generate an RF signal having the frequency parameters during one or more cycles of operation of the kilohertz RF generator.

公开(公告)号：US12002658B2

公开(公告)日：2024-06-04

申请号：US17598783

申请日：2020-03-26

Applicant: Lam Research Corporation

Inventor： Sreeram Sonti

IPC: H01J37/32 ,  G01M3/16 ,  G01M3/18 ,  G08B21/20

CPC classification number: H01J37/32522 ,  G01M3/165 ,  G01M3/186 ,  G08B21/20 ,  H01J37/32724 ,  H01J37/32807 ,  H01J37/3288 ,  H01J37/32357

Abstract: In one embodiment, the disclosed apparatus is a process cooling-water isolation system used in a process tool. The system includes an isolation valve coupled between a water supply and an inlet of one or more components in a process-module water-cooling circuit. An open device allows cooling water to flow to the one or more components, while a close device prevents cooling water from flowing to the one or more components. At least one water-leak sensor is coupled to the close device to detect a water leak within the process tool. A check valve having an inlet port is coupled to an outlet of the one or more components, and an outlet port is coupled to a water-return reservoir. The check valve prevents water from back-flowing from the water-return reservoir into the one or more components. Other apparatuses and methods are disclosed.

公开(公告)号：US20240178014A1

公开(公告)日：2024-05-30

申请号：US18431669

申请日：2024-02-02

Applicant: Lam Research Corporation

Inventor： Keren J. KANARIK ,  Samantha SiamHwa TAN ,  Yang PAN ,  Jeffrey MARKS

IPC: H01L21/67 ,  H01L21/683

CPC classification number: H01L21/67069 ,  H01L21/67109 ,  H01L21/6833

Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below −20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

公开(公告)号：US20240170309A1

公开(公告)日：2024-05-23

申请号：US18283797

申请日：2022-04-27

Applicant: Lam Research Corporation

Inventor： Karl Frederick Leeser

IPC: H01L21/67

CPC classification number: H01L21/6719 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67201

Abstract: Various examples include arrangements of semiconductor-processing tools. In one example, a semiconductor-processing tool includes multiple multi-station modules, each having multiple processing stations. At least some of the processing stations are organized in a diamond-shaped arrangement. A vacuum-transfer module is coupled to each of the multi-station modules. The vacuum-transfer module has one or more vacuum-transfer robots to transfer substrates to and from at least one of the multiple processing stations. At least one additional processing-station is located in the vacuum-transfer module. Other systems and apparatuses are disclosed.

公开(公告)号：US11989027B2

公开(公告)日：2024-05-21

申请号：US17046257

申请日：2019-04-09

Applicant: Lam Research Corporation

Inventor： Christopher W. Burkhart ,  Charles Ditmore

IPC: G05D1/02 ,  G05D1/00

CPC classification number: G05D1/0225 ,  G05D1/0234 ,  G05D2201/0216

Abstract: In some examples, a dual-mode autonomous guided vehicle (AGV) is provided for docking a module in a fabrication bay. An example AGV may comprise a chassis for supporting the module on the AGV; drive means to transport the AGV under autonomous guidance, in a module transportation mode, to a specified location within the fabrication bay; a Cartesian x-y movement table to move the module under autonomous guidance, in a module docking mode, in an x- or y-docking direction, into a specific docking position; and a z-direction lift mechanism to move the module in a z-docking direction during the module docking mode.

公开(公告)号：US20240162010A1

公开(公告)日：2024-05-16

申请号：US18550664

申请日：2022-03-15

Applicant: Lam Research Corporation

Inventor： Chin-Yi Liu ,  Dan Marohl

IPC: H01J37/32

CPC classification number: H01J37/32238 ,  H01J37/32119

Abstract: A dielectric window for a process chamber is provided. The dielectric window includes a disc-shaped body consisting of a first dielectric material having a first dielectric constant. An annular portion consisting of a second dielectric material having a second dielectric constant greater than the first dielectric constant is seated in the disc-shaped body. The dielectric window has a substantially constant thickness over a process region of the process chamber. The process region is an interior region of the process chamber in which a plasma is generated during processing of a substrate in the process chamber. The seating of the annular portion in the disc-shaped body is configured to maintain the substantially constant thickness of the dielectric window.

公开(公告)号：US20240136153A1

公开(公告)日：2024-04-25

申请号：US18493614

申请日：2023-10-23

Applicant: Lam Research Corporation

Inventor： Matthew Scott Weimer ,  Pramod Subramonium ,  Ragesh Puthenkovilakam ,  Rujun Bai ,  David French

IPC: H01J37/32 ,  C23C16/517 ,  C23C16/52 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01J37/32146 ,  C23C16/517 ,  C23C16/52 ,  H01J37/32174 ,  H01L21/0272 ,  H01L21/31144 ,  H01L21/32139 ,  H01J2237/3321

Abstract: Methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate include pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.

公开(公告)号：US11967486B2

公开(公告)日：2024-04-23

申请号：US17424381

申请日：2020-01-21

Applicant: LAM RESEARCH CORPORATION

Inventor： Andrew Stratton Bravo ,  Chih-Hsun Hsu ,  Serge Kosche ,  Stephen Whitten ,  Shih-Chung Kon ,  Mark Kawaguchi ,  Himanshu Chokshi ,  Dan Zhang ,  Gnanamani Amburose

IPC: H01J37/32

CPC classification number: H01J37/32422 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32467 ,  H01J37/32174

Abstract: A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes configured to control plasma uniformity.