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    Transistor, method of manufacturing transistor, and method of operating transistor
    73.
    发明申请
    Transistor, method of manufacturing transistor, and method of operating transistor 失效

    公开(公告)号：US20060108639A1

    公开(公告)日：2006-05-25

    申请号：US11274475

    申请日：2005-11-16

    申请人： Choong-Rae Cho ,  In-Kyeong Yoo ,  Myoung-Jae Lee

    发明人： Choong-Rae Cho ,  In-Kyeong Yoo ,  Myoung-Jae Lee

    IPC分类号： H01L29/94 ,  H01L29/76

    CPC分类号： H01L29/685

    摘要： A transistor in which a physical property of its channel is changed according to an applied voltage, and methods of manufacturing and operating the same are provided. The transistor may include a first conductive layer on a substrate, a phase change layer and a second conductive layer which are sequentially stacked on the first conductive layer, a first current direction limiting unit and a second current direction limiting unit formed on the second conductive layer by being separated within a space, a third conductive layer and a fourth conductive layer formed on the first current direction limiting unit and the second current direction limiting unit, respectively, a word line connected to the third conductive layer, a bit line connected to the fourth conductive layer, and a voltage lowering unit connected to the word line.

    Memory devices and methods of manufacturing the same
    78.
    发明授权
    Memory devices and methods of manufacturing the same 有权
    存储器件及其制造方法

    公开(公告)号：US08274067B2

    公开(公告)日：2012-09-25

    申请号：US12213062

    申请日：2008-06-13

    申请人： Seung-eon Ahn ,  Myoung-jae Lee ,  Suk-pil Kim ,  Young-soo Park

    发明人： Seung-eon Ahn ,  Myoung-jae Lee ,  Suk-pil Kim ,  Young-soo Park

    IPC分类号： H01L29/06

    CPC分类号： G11C13/0007 ,  G11C2213/32 ,  G11C2213/72 ,  H01L27/24

    摘要： Memory devices and methods of manufacturing the same are provided. In a memory device, a memory-switch structure is formed between a first and second electrode. The memory-switch structure includes a memory resistor and a switch structure. The switch structure controls current supplied to the memory resistor. A memory region of the memory resistor and a switch region of the switch structure are different from each other.

    摘要翻译： 提供了存储器件及其制造方法。 在存储器件中，在第一和第二电极之间形成存储器开关结构。 存储器开关结构包括存储器电阻器和开关结构。 开关结构控制提供给存储电阻的电流。 存储电阻的存储区域和开关结构的开关区域彼此不同。