Substrate processing apparatus and substrate processing method

    公开(公告)号:US09966282B2

    公开(公告)日:2018-05-08

    申请号:US14867458

    申请日:2015-09-28

    CPC classification number: H01L21/6708 G03F7/423 H01L21/31133

    Abstract: According to one embodiment, a substrate processing apparatus includes a first liquid supplier, a second liquid supplier, and a controller. The first liquid supplier supplies a substrate with a sulfuric acid solution having a first temperature equal to or higher than the boiling point of hydrogen peroxide water. The second liquid supplier supplies a surface to be treated of the substrate with a mixture of sulfuric acid solution and hydrogen peroxide water having a second temperature lower than the first temperature. The controller controls the first liquid supplier to supply the sulfuric acid solution so as to heat the substrate to the boiling point of hydrogen peroxide water or higher. When the temperature of the substrate becomes equal to or higher than the second temperature, the controller controls the first liquid supplier to stop supplying the sulfuric acid solution and controls the second liquid supplier to supply the mixture.

    Substrate gripping device and substrate processing apparatus

    公开(公告)号:US09922861B2

    公开(公告)日:2018-03-20

    申请号:US14247329

    申请日:2014-04-08

    CPC classification number: H01L21/68728

    Abstract: A rotary table; a drive motor M configured to rotate the rotary table; a pin base supported by the rotary table; a pin fixing member configured to move closer to or away from C1 upon the pin base revolving; first chuck pins and second chuck pins provided on the pin fixing member and configured to be into contact with an outer edge of the substrate W; a substrate gripping force generation mechanism including a spring member; a chuck pin switching mechanism including an inertia member configured to be rotated coaxially with the rotary table and a protruded member provided on an outer peripheral part of the inertia member; and a cam member provided on the pin fixing member and configured to engage with protruded member.

    Spin treatment apparatus
    79.
    发明授权

    公开(公告)号:US09679787B2

    公开(公告)日:2017-06-13

    申请号:US14472923

    申请日:2014-08-29

    Inventor: Masaaki Furuya

    Abstract: A spin treatment apparatus includes an annular liquid receiver, an annular cup body and an annular partitioning member. The annular liquid receiver surrounds a rotating substrate at a distance from an outer periphery of the substrate and is configured to receive liquid flying from the rotating substrate and accommodate the liquid. The annular cup body surrounds the liquid receiver at a distance from an outer periphery of the liquid receiver and forms an annular outer exhaust flow channel for generating an airflow along an upper surface to an outer peripheral surface of the liquid receiver. The annular partitioning member is provided inside the annular liquid receiver and forms an annular inner exhaust flow channel for generating an airflow along an inner peripheral surface to a lower surface of the liquid receiver.

    REFLECTIVE MASK CLEANING APPARATUS AND REFLECTIVE MASK CLEANING METHOD
    80.
    发明申请
    REFLECTIVE MASK CLEANING APPARATUS AND REFLECTIVE MASK CLEANING METHOD 审中-公开
    反光面罩清洁装置和反光面膜清洁方法

    公开(公告)号:US20170017151A1

    公开(公告)日:2017-01-19

    申请号:US15124409

    申请日:2015-02-19

    CPC classification number: G03F1/82 B08B7/0035 G03F1/24

    Abstract: A reflective mask cleaning apparatus according to an embodiment comprises a first supply section configured to supply a first solution containing at least one of an organic solvent and a surfactant to a ruthenium-containing capping layer provided in a reflective mask; and a second supply section configured to supply at least one of a reducing solution and an oxygen-free solution to the capping layer.A reflective mask cleaning apparatus according to an alternative embodiment comprises a third supply section configured to supply a plasma product produced from a reducing gas to a ruthenium-containing capping layer provided in a reflective mask; and a second supply section configured to supply at least one of a reducing solution and an oxygen-free solution to the capping layer.

    Abstract translation: 根据替代实施例的反射掩模清洁装置包括第三供应部分,其构造成将由还原气体产生的等离子体产物供应到设置在反射掩模中的含钌覆盖层; 以及第二供给部,其构造成向所述封盖层供给还原溶液和无氧溶液中的至少一种。

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