公开(公告)号：US07981808B2

公开(公告)日：2011-07-19

申请号：US12241139

申请日：2008-09-30

Applicant: Tien Ying Luo ,  Olubunmi O. Adetutu

Inventor： Tien Ying Luo ,  Olubunmi O. Adetutu

IPC: H01L21/3205 ,  H01L21/31 ,  H01L21/336

CPC classification number: H01L21/31645 ,  C23C16/40 ,  C23C16/402 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45536 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02274 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31641 ,  H01L29/517

Abstract: A method of forming a gate dielectric layer includes forming a first dielectric layer over a semiconductor substrate using a first plasma, performing a first in-situ plasma nitridation of the first dielectric layer to form a first nitrided dielectric layer, forming a second dielectric layer over the first dielectric layer using a second plasma, performing a second in-situ plasma nitridation of the second dielectric layer to form a second nitrided dielectric layer; and annealing the first nitrided dielectric layer and the second nitrided dielectric layer, wherein the gate dielectric layer comprises the first nitrided dielectric layer and the second nitrided dielectric layer. In other embodiments, the steps of forming a dielectric layer using a plasma and performing an in-situ plasma nitridation are repeated so that more than two nitrided dielectric layers are formed and used as the gate dielectric layer.

Abstract translation: 一种形成栅极电介质层的方法包括：使用第一等离子体在半导体衬底上形成第一电介质层，执行第一介电层的第一原位等离子体氮化，形成第一氮化电介质层，形成第二电介质层 使用第二等离子体的第一电介质层，执行第二介电层的第二原位等离子体氮化以形成第二氮化介电层; 以及对所述第一氮化介电层和所述第二氮化介电层进行退火，其中所述栅介质层包括所述第一氮化介电层和所述第二氮化介电层。 在其他实施例中，重复使用等离子体形成电介质层并执行原位等离子体氮化的步骤，以形成多于两个的氮化电介质层并用作栅极电介质层。

公开(公告)号：US20110085739A1

公开(公告)日：2011-04-14

申请号：US12996424

申请日：2008-06-06

Applicant: Dong-Qing Zhang ,  Rajan Joshi ,  Ju Guo ,  Ana B. Benitez ,  Ying Luo

Inventor： Dong-Qing Zhang ,  Rajan Joshi ,  Ju Guo ,  Ana B. Benitez ,  Ying Luo

IPC: G06K9/68 ,  G06K9/62 ,  G06K9/46

CPC classification number: G06F16/58 ,  G06F16/583

Abstract: A system and method for an efficient semantic similarity search of images with a classification structure are provided. The system and method provide for building a semantic classification-search tree for the plurality of images, the classification tree including at least two categories of images, each category of images representing a subset of the plurality of images, receiving a query image, classifying the query image to select one of the at least two categories of images, and restricting the search for the image of interest using the query image to the selected one of the at least two categories of images.

Abstract translation: 提供了一种用于具有分类结构的图像的有效语义相似性搜索的系统和方法。 该系统和方法提供用于构建多个图像的语义分类搜索树，分类树包括至少两个图像类别，每个类别的图像表示多个图像的子集，接收查询图像，分类 查询图像以选择所述至少两个类别的图像中的一个，并且使用查询图像将所搜索的图像搜索到所选择的至少两个图像类别中。

公开(公告)号：US07741183B2

公开(公告)日：2010-06-22

申请号：US12039361

申请日：2008-02-28

Applicant: Tien Ying Luo ,  Ning Liu ,  Mohamed S. Moosa

Inventor： Tien Ying Luo ,  Ning Liu ,  Mohamed S. Moosa

IPC: H01L21/336 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/3144 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/3105 ,  H01L29/513 ,  H01L29/518 ,  H01L29/6659

Abstract: A method of forming a semiconductor device includes providing a substrate for the semiconductor device. A base oxide layer is formed overlying the substrate by applying a rapid thermal oxidation (RTO) of the substrate in the presence of oxygen. A nitrogen-rich region is formed within and at a surface of the base oxide layer. The nitrogen-rich region overlies an oxide region in the base oxide layer. Afterwards, the semiconductor device is annealed in a dilute oxygen and hydrogen-free ambient of below 1 Torr partial pressure of the oxygen. The annealing heals bond damage in both the oxide region and the nitrogen-rich region in the base oxide layer. After annealing the semiconductor device in the dilute oxygen ambient, in-situ steam generation (ISSG) is used to grow and density the oxide region in the base oxide layer at an interface between the substrate and base oxide layer.

Abstract translation: 形成半导体器件的方法包括提供用于半导体器件的衬底。 通过在氧的存在下施加衬底的快速热氧化（RTO），在衬底上形成基底氧化物层。 在基底氧化物层的表面内和表面形成富氮区域。 富氮区域覆盖在基底氧化物层中的氧化物区域。 之后，半导体器件在氧低于1Torr分压的稀氧和无氢环境中进行退火。 该退火对基底氧化物层中的氧化物区域和富氮区域进行了愈合。 在稀氧环境中对半导体器件进行退火之后，使用原位蒸汽发生（ISSG）来生长和密集基底氧化物层中的氧化物区域，该基底氧化物层在衬底和基底氧化物层之间的界面处。

公开(公告)号：US07651935B2

公开(公告)日：2010-01-26

申请号：US11237346

申请日：2005-09-27

Applicant: Olubunmi O. Adetutu ,  Tien Ying Luo ,  Narayanan C. Ramani

Inventor： Olubunmi O. Adetutu ,  Tien Ying Luo ,  Narayanan C. Ramani

IPC: H01L21/3205

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/82345 ,  H01L21/823842 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7833

Abstract: A transistor structure of an electronic device can include a gate dielectric layer and a gate electrode. The gate electrode can have a surface portion between the gate dielectric layer and the rest of the gate electrode. The surface portion can be formed such that another portion of the gate electrode primarily sets the effective work function in the finished transistor structure.

Abstract translation: 电子器件的晶体管结构可以包括栅极介电层和栅电极。 栅极电极可以在栅极电介质层和栅电极的其余部分之间具有表面部分。 表面部分可以形成为使得栅电极的另一部分主要在最终晶体管结构中设置有效功函数。

公开(公告)号：US07485621B2

公开(公告)日：2009-02-03

申请号：US10527257

申请日：2002-09-09

Applicant: Jun Wu ,  Ying Luo

Inventor： Jun Wu ,  Ying Luo

IPC: A61K38/00 ,  C12N15/00 ,  C12N5/02 ,  C12P21/06 ,  C12P21/08 ,  C07K1/00 ,  C07H21/04 ,  G01N33/574

CPC classification number: C07K14/47

Abstract: The invention provides a new tumor tag, RL5 protein, the polynucleotide encoding RL5 protein, and the method of producing RL5 protein by recombinant technology. The invention also discloses the use of RL5 protein and the polynucleotides encoding RL5 protein, e.g., in diagnosing and treating tumor, as well as the pharmaceutical composition containing RL5 protein or the antibody against it.

Abstract translation: 本发明提供新的肿瘤标签RL5蛋白，编码RL5蛋白的多核苷酸，以及通过重组技术产生RL5蛋白的方法。 本发明还公开了使用RL5蛋白和编码RL5蛋白的多核苷酸，例如诊断和治疗肿瘤，以及含有RL5蛋白或抗体的抗体的药物组合物。

公开(公告)号：US07462704B2

公开(公告)日：2008-12-09

申请号：US10547397

申请日：2003-02-27

Applicant: Jun Wu ,  Ying Luo

Inventor： Jun Wu ,  Ying Luo

IPC: C07H21/02 ,  C07H21/04 ,  C12P21/06

CPC classification number: C07K16/3076 ,  A61K38/00 ,  C07K14/4748 ,  G01N33/57419

Abstract: The invention provides a new kind of tumor marker RL9/RL10 protein, the polynucleotide encoding the polypeptide, and the method of producing RL9/RL10 protein by recombinant technology. The invention also discloses the use of RL9/RL10 protein and the polynucleotides encoding RL9/RL10 protein, e.g., in diagnosing and treating tumor, as well as the pharmaceutical composition containing RL9/RL10 protein or the antibody against it.

Abstract translation: 本发明提供了一种新的肿瘤标志物RL9 / RL10蛋白，编码多肽的多核苷酸，以及通过重组技术产生RL9 / RL10蛋白的方法。 本发明还公开了使用RL9 / RL10蛋白和编码RL9 / RL10蛋白的多核苷酸，例如诊断和治疗肿瘤，以及含有RL9 / RL10蛋白或抗体的抗体的药物组合物。

公开(公告)号：US20080298648A1

公开(公告)日：2008-12-04

申请号：US11756148

申请日：2007-05-31

Applicant: Peter Z. Lo ,  Behnam Bavarian ,  Ying Luo

Inventor： Peter Z. Lo ,  Behnam Bavarian ,  Ying Luo

IPC: G06K9/00

CPC classification number: G06K9/00067

Abstract: A method is performed in a print identification system to segment a non-segmented slap print image into its finger components. The method includes: receiving, for a hand, a non-segmented slap print image and a corresponding plurality of roll print images each corresponding to a different finger number; comparing the roll print images to the non-segmented slap print image to determine a number of mated minutiae areas on the non-segmented slap print image; detecting a number of print components from the non-segmented slap print image using the plurality of mated minutiae areas; and selecting a number of final print components from the detected print components and assigning finger numbers to the final print components, using the plurality of mated minutiae areas.

Abstract translation: 在打印识别系统中执行一种方法，以将非分段拍打打印图像分割成其手指部件。 该方法包括：针对手接收非分段拍打打印图像和对应于不同手指号码的相应多个滚动打印图像; 将所述滚动打印图像与所述非分段拍打打印图像进行比较，以确定所述非分段拍打打印图像上的配合细节区域的数量; 使用所述多个配对细节区域从所述非分段拍打图像检测多个打印部件; 以及从检测到的打印部件中选择多个最终打印部件，并使用多个配合的细节区域将手指号码分配给最终的打印部件。

公开(公告)号：US07432158B1

公开(公告)日：2008-10-07

申请号：US11459843

申请日：2006-07-25

Applicant: Rajesh A. Rao ,  Tien Ying Luo ,  Ramachandran Muralidhar ,  Robert F. Steimle ,  Sherry G. Straub

Inventor： Rajesh A. Rao ,  Tien Ying Luo ,  Ramachandran Muralidhar ,  Robert F. Steimle ,  Sherry G. Straub

IPC: H01L21/336 ,  H01L21/4763 ,  H01L21/8238 ,  H01L21/36

CPC classification number: H01L21/28273 ,  B82Y10/00 ,  H01L27/1052 ,  H01L27/11526 ,  H01L27/11531 ,  H01L29/42332 ,  H01L29/7881 ,  Y10S977/774 ,  Y10S977/779 ,  Y10S977/78 ,  Y10S977/943

Abstract: A method of making a semiconductor device includes a substrate having a semiconductor layer having a first portion for non-volatile memory and a second portion exclusive of the first portion. A first dielectric layer is formed over the semiconductor layer. A first plurality of nanoclusters is formed over the first portion and a second plurality of nanoclusters is formed over the second portion. A layer of nitrided oxide is formed around each nanocluster of the first plurality and the second plurality of nanoclusters. Remote plasma nitridation is performed on the layers of nitrided oxide of the first plurality of nanoclusters. The nanoclusters are removed from the second portion. A second dielectric layer is formed over the semiconductor layer. A conductive layer is formed over the second dielectric layer.

Abstract translation: 制造半导体器件的方法包括具有半导体层的衬底，该半导体层具有用于非易失性存储器的第一部分和不包括第一部分的第二部分。 第一介电层形成在半导体层上。 在第一部分上形成第一多个纳米团簇，并且在第二部分上形成第二多个纳米团簇。 在第一多个和第二多个纳米团簇的每个纳米簇周围形成氮化氧化物层。 在第一多个纳米团簇的氮化氧化物层上进行远程等离子体氮化。 从第二部分去除纳米团簇。 在半导体层上方形成第二电介质层。 在第二电介质层上形成导电层。

公开(公告)号：US07423118B1

公开(公告)日：2008-09-09

申请号：US09715725

申请日：2000-11-16

Applicant: Ying Luo ,  Xiang Xu ,  Cindy Leo ,  Betty Huang ,  Mary Shen

Inventor： Ying Luo ,  Xiang Xu ,  Cindy Leo ,  Betty Huang ,  Mary Shen

IPC: C07K14/00

CPC classification number: C07K14/4747 ,  A61K38/00

Abstract: The present invention is directed to novel polypeptides, nucleic acids and related molecules which have an effect on or are related to the cell cycle. Also provided herein are vectors and host cells comprising those nucleic acid sequences, chimeric polypeptide molecules comprising the polypeptides of the present invention fused to heterologous polypeptide sequences, antibodies which bind to the polypeptides of the present invention and to methods for producing the polypeptides of the present invention. Further provided by the present invention are methods for identifying novel compositions which mediate cell cycle bioactivity, and the use of such compositions in diagnosis and treatment of disease.

Abstract translation: 本发明涉及对细胞周期有影响或与细胞周期有关的新型多肽，核酸和相关分子。 本文还提供了包含那些核酸序列的载体和宿主细胞，包含与异源多肽序列融合的本发明的多肽的嵌合多肽分子，与本发明的多肽结合的抗体以及本发明的多肽的制备方法 发明。 本发明还提供了鉴定介导细胞周期生物活性的新型组合物的方法，以及这些组合物在疾病诊断和治疗中的应用。

公开(公告)号：US20080173986A1

公开(公告)日：2008-07-24

申请号：US12008607

申请日：2008-01-11

Applicant: Kurt H. Junker ,  Paul A. Grudowski ,  Xiang-Zheng Bo ,  Tien Ying Luo

Inventor： Kurt H. Junker ,  Paul A. Grudowski ,  Xiang-Zheng Bo ,  Tien Ying Luo

IPC: H01L23/58 ,  H01L21/31

CPC classification number: H01L21/823807 ,  H01L29/78 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for making a semiconductor device is provided which comprises (a) providing a semiconductor structure equipped with a gate (209) and a channel region, said channel region being associated with the gate; (b) depositing a first sub-layer (231) of a first stressor material over the semiconductor structure, said first stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; (c) curing the first stressor material through exposure to a radiation source; (d) depositing a second sub-layer (233) of a second stressor material over the first sub-layer, said second stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; and (e) curing the second sub-layer of stressor material through exposure to a radiation source.

Abstract translation: 提供一种制造半导体器件的方法，其包括（a）提供配备有栅极（209）和沟道区域的半导体结构，所述沟道区域与栅极相关联; （b）在半导体结构上沉积第一应力源材料的第一子层（231），所述第一应力材料含有硅 - 氮键并向半导体结构施加拉伸应力; （c）通过暴露于辐射源固化第一应激物材料; （d）在所述第一子层上沉积第二应力源材料的第二子层（233），所述第二应力材料含有硅 - 氮键并向所述半导体结构施加拉伸应力; 和（e）通过暴露于辐射源固化应力源材料的第二子层。