METHOD OF FABRICATING MEMS DEVICES USING PLASMA ETCHING AND DEVICE THEREFOR
    71.
    发明申请
    METHOD OF FABRICATING MEMS DEVICES USING PLASMA ETCHING AND DEVICE THEREFOR 审中-公开
    使用等离子体蚀刻制造MEMS器件的方法及其器件

    公开(公告)号:US20160257559A1

    公开(公告)日:2016-09-08

    申请号:US14658114

    申请日:2015-03-13

    Applicant: MCube Inc.

    Abstract: A method for fabricating a MEMS sensor device. The method can include providing a substrate, forming an IC layer overlying the substrate, forming an oxide layer overlying the IC layer, forming a metal layer coupled to the IC layer through the oxide layer, forming a MEMS layer having a pair of designated sense electrode portions and a designated proof mass portion overlying the oxide layer, forming a via structure within each of the designated sense electrode portions, and etching the MEMS layer to form a pair of sense electrodes and a proof mass from the designated sense electrode portions and proof mass portions, respectively. The via structure can include a ground post and the proof mass can include a sense comb. The MEMS sensor device formed using this method can result is more well-defined edges of the proof mass structure.

    Abstract translation: 一种用于制造MEMS传感器装置的方法。 该方法可以包括提供衬底,形成覆盖衬底的IC层,形成覆盖IC层的氧化物层,通过氧化层形成耦合到IC层的金属层,形成具有一对指定检测电极的MEMS层 部分和指定的检验质量部分覆盖在氧化物层上,在每个指定的感测电极部分内形成通孔结构,并蚀刻MEMS层以形成一对感测电极和来自指定检测电极部分的检验质量块 部分。 通孔结构可以包括接地柱,并且检测块可以包括感测梳。 使用这种方法形成的MEMS传感器装置可以产生更加明确的边缘的证明质量结构。

    Three axis magnetic sensor device and method using flex cables

    公开(公告)号:US09423473B2

    公开(公告)日:2016-08-23

    申请号:US14606909

    申请日:2015-01-27

    Applicant: mCube Inc.

    CPC classification number: G01R33/093 G01R33/0206 G01R33/096 G01R33/098

    Abstract: A method and structure for a three-axis magnetic field sensing device. An IC layer having first bond pads and second bond pads can be formed overlying a substrate/SOI member with a first, second, and third magnetic sensing element coupled the IC layer. One or more conductive cables can be formed to couple the first and second bond pads of the IC layer. A portion of the substrate member and IC layer can be removed to separate the first and second magnetic sensing elements on a first substrate member from the third sensing element on a second substrate member, and the third sensing element can be coupled to the side-wall of the first substrate member.

    Integrated CMOS and MEMS devices with air dieletrics
    73.
    发明授权
    Integrated CMOS and MEMS devices with air dieletrics 有权
    集成的CMOS和MEMS器件与空气消毒

    公开(公告)号:US09365412B2

    公开(公告)日:2016-06-14

    申请号:US13855988

    申请日:2013-04-03

    Applicant: MCube, Inc.

    Abstract: A monolithically integrated CMOS and MEMS device. The device includes a first semiconductor substrate having a first surface region and one or more CMOS IC devices on a CMOS IC device region overlying the first surface region. The CMOS IC device region can also have a CMOS surface region. A bonding material can be provided overlying the CMOS surface region to form an interface by which a second semiconductor substrate can be joined to the CMOS surface region. The second semiconductor substrate has a second surface region coupled to the CMOS surface region by bonding the second surface region to the bonding material. The second semiconductor substrate includes one or more first air dielectric regions. One or more free standing MEMS structures can be formed within one or more portions of the processed first substrate.

    Abstract translation: 单片集成CMOS和MEMS器件。 该器件包括第一半导体衬底,该第一半导体衬底具有覆盖第一表面区域的CMOS IC器件区域上的第一表面区域和一个或多个CMOS IC器件。 CMOS IC器件区域也可以具有CMOS表面区域。 可以提供覆盖CMOS表面区域的接合材料,以形成可将第二半导体衬底接合到CMOS表面区域的界面。 第二半导体衬底具有通过将第二表面区域结合到接合材料而耦合到CMOS表面区域的第二表面区域。 第二半导体衬底包括一个或多个第一空气介电区域。 可以在经处理的第一基板的一个或多个部分内形成一个或多个独立的MEMS结构。

    Substrate curvature compensation methods and apparatus
    74.
    发明授权
    Substrate curvature compensation methods and apparatus 有权
    基板曲率补偿方法和装置

    公开(公告)号:US09291638B2

    公开(公告)日:2016-03-22

    申请号:US13745723

    申请日:2013-01-18

    Applicant: mCube Inc.

    Abstract: A method for providing acceleration data with reduced substrate-displacement bias includes receiving in an accelerometer an external acceleration, determining the acceleration data with reduced substrate displacement bias in a compensation portion in response to a first and a second displacement indicators from a MEMS transducer, and, in response to substrate compensation factors from a MEMS compensation portion, outputting the acceleration data with reduced substrate displacement bias, wherein the first displacement indicator and the second displacement indicator are determined by the MEMS transducer relative to a substrate in response to the external acceleration and to a substrate displacement, and wherein the substrate compensation factors are determined by the MEMS compensation portion relative to the substrate in response to the substrate displacement.

    Abstract translation: 用于提供具有减小的衬底位移偏置的加速度数据的方法包括在加速度计中接收外部加速度,响应于来自MEMS换能器的第一和第二位移指示器,在补偿部分中减小衬底位移偏置来确定加速度数据,以及 响应于来自MEMS补偿部分的衬底补偿因子,以减小的衬底位移偏压输出加速度数据,其中第一位移指示器和第二位移指示器响应于外部加速度由MEMS换能器相对于衬底确定,并且 到衬底位移,并且其中衬底补偿因子响应于衬底位移由MEMS补偿部分相对于衬底确定。

    INTEGRATED MEMS INERTIAL SENSING DEVICE
    75.
    发明申请
    INTEGRATED MEMS INERTIAL SENSING DEVICE 有权
    集成MEMS惯性感应装置

    公开(公告)号:US20150276405A1

    公开(公告)日:2015-10-01

    申请号:US14158756

    申请日:2014-01-17

    Applicant: mCube Inc.

    CPC classification number: G01C19/5776

    Abstract: An integrated MEMS inertial sensing device can include a MEMS inertial sensor with a drive loop configuration overlying a CMOS IC substrate. The CMOS IC substrate can include an AGC loop circuit coupled to the MEMS inertial sensor. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. A benefit of the AGC loop is that the charge pump of the HV driver inherently includes a ‘time constant’ for charging up of its output voltage. This incorporates the Low pass functionality in to the AGC loop without requiring additional circuitry.

    Abstract translation: 集成MEMS惯性感测装置可以包括具有覆盖在CMOS IC衬底上的驱动环配置的MEMS惯性传感器。 CMOS IC衬底可以包括耦合到MEMS惯性传感器的AGC环路电路。 AGC环路的作用方式使得从驱动信号中产生的期望信号幅度将MEMS谐振器速度保持在期望的频率和幅度。 AGC环路的优点是HV驱动器的电荷泵固有地包括用于充电其输出电压的“时间常数”。 这将低通功能集成到AGC环路中,无需额外的电路。

    POWER SAVING METHOD OF OPERATING A PORTABLE COMPUTING DEVICE
    76.
    发明申请
    POWER SAVING METHOD OF OPERATING A PORTABLE COMPUTING DEVICE 有权
    操作便携式计算设备的省电方法

    公开(公告)号:US20150268714A1

    公开(公告)日:2015-09-24

    申请号:US14223903

    申请日:2014-03-24

    Applicant: mCube, Inc.

    Inventor: ChengLong FU

    Abstract: A portable computing device using power consumption reduction and a method of operating therefor. The method can include the following steps: determining, in a sensor in the portable computing device, orientation changes of the portable computing device; determining, in the portable computing device, a status of a first operation of the portable computing device; determining, in the portable computing device, a status of a second operation of the portable computing device; discontinuing, in the portable computing device, the second operation in response to when the orientation changes of the portable computing device are less than a threshold, and in response to the status of the first operation and the status of the second operation; and outputting, on a display of the portable computing device, an indication to a user that the second operation has been discontinued.

    Abstract translation: 使用功耗降低的便携式计算装置及其操作方法。 该方法可以包括以下步骤:在便携式计算设备的传感器中确定便携式计算设备的方向改变; 在便携式计算设备中确定便携式计算设备的第一操作的状态; 在所述便携式计算设备中确定所述便携式计算设备的第二操作的状态; 响应于便携式计算设备的方向改变何时小于阈值,以及响应于第一操作的状态和第二操作的状态,在便携式计算设备中停止第二操作; 以及在便携式计算设备的显示器上向用户输出第二操作已被停止的指示。

    TRANSDUCER STRUCTURE AND METHOD FOR MEMS DEVICES
    77.
    发明申请
    TRANSDUCER STRUCTURE AND METHOD FOR MEMS DEVICES 审中-公开
    MEMS器件的传感器结构和方法

    公开(公告)号:US20150241479A1

    公开(公告)日:2015-08-27

    申请号:US13922539

    申请日:2013-06-20

    Applicant: MCube Inc.

    Abstract: An improved MEMS transducer apparatus and method is provided. The apparatus has a movable base structure including an outer surface region and at least one portion removed to form at least one inner surface region. At least one intermediate anchor structure is disposed within the inner surface region. The apparatus includes an intermediate spring structure operably coupled to the central anchor structure, and at least one portion of the inner surface region. A capacitor element is disposed within the inner surface region.

    Abstract translation: 提供了一种改进的MEMS换能器装置和方法。 该装置具有可移动的基座结构,其包括外表面区域和至少一个部分被去除以形成至少一个内表面区域。 至少一个中间锚结构设置在内表面区域内。 该装置包括可操作地联接到中心锚固结构的中间弹簧结构以及内表面区域的至少一部分。 电容器元件设置在内表面区域内。

    METHOD AND STRUCTURE OF MEMS WLCSP FABRICATION
    78.
    发明申请
    METHOD AND STRUCTURE OF MEMS WLCSP FABRICATION 有权
    MEMS WLCSP制造的方法与结构

    公开(公告)号:US20150166330A1

    公开(公告)日:2015-06-18

    申请号:US14507177

    申请日:2014-10-06

    Applicant: mCube Inc.

    Inventor: Chien Chen Lee

    Abstract: A method for fabricating a MEMS-IC device structure can include receiving a CMOS substrate comprising a plurality of CMOS circuits and a surface portion. A MEMS substrate having at least one MEMS device can be received and coupled to the CMOS substrate. The MEMS substrate and the surface portion of the CMOS substrate can be encapsulated with a molding material, which forms a top surface. A first plurality of vias can be created in the molding material from the top surface to the surface portion of the CMOS substrate. A conductive material can be disposed within the first plurality of vias such that the conductive material is electrically coupled to a portion of the CMOS substrate. A plurality of interconnects can be formed from the conductive material to the top surface of the molding material and a plurality of solder balls can be formed upon these interconnects.

    Abstract translation: 制造MEMS-IC器件结构的方法可以包括接收包括多个CMOS电路和表面部分的CMOS衬底。 具有至少一个MEMS器件的MEMS衬底可被接收并耦合到CMOS衬底。 MEMS衬底和CMOS衬底的表面部分可以用形成顶表面的成型材料封装。 可以在模制材料中从CMOS衬底的顶表面到表面部分形成第一多个通孔。 导电材料可以设置在第一多个通孔内,使得导电材料电耦合到CMOS衬底的一部分。 可以从导电材料形成多个互连件到模制材料的顶表面,并且可以在这些互连件上形成多个焊球。

    CENTRIFUGE MEMS STICTION TEST SYSTEM AND METHOD
    79.
    发明申请
    CENTRIFUGE MEMS STICTION TEST SYSTEM AND METHOD 审中-公开
    离心MEMS测试系统和方法

    公开(公告)号:US20140352403A1

    公开(公告)日:2014-12-04

    申请号:US14289494

    申请日:2014-05-28

    Applicant: MCube Inc.

    CPC classification number: G01N19/02 B81C99/005 G01M99/004 G01N2203/0037

    Abstract: A system for testing a device under a high gravitational force including a centrifuge with a rotating member and method of operation thereof. An operating power can be applied to a device, which can be coupled to the rotating member. The system can include a rotational control that can be coupled to the centrifuge. This rotational control can be configured to rotate the rotating member in response to a controlled number of revolutions per time period. The system can also include an analysis device for monitoring one or more signals from the device with respect to the controlled number of revolutions per time period. The analysis device can be configured to determine a stiction force associated with the DUT (Device Under Test) in response to the time-varying gravitational forces and to the one or more signals from the DUTs.

    Abstract translation: 一种用于在高重力下测试装置的系统,包括具有旋转构件的离心机及其操作方法。 可以将操作功率施加到可以耦合到旋转构件的装置。 该系统可以包括可耦合到离心机的旋转控制。 该旋转控制可以被配置为响应于每个时间段的受控转数来旋转旋转构件。 该系统还可以包括分析装置,用于相对于每个时间段的受控转数来监测来自装置的一个或多个信号。 分析装置可以被配置为响应于随时间变化的重力和来自DUT的一个或多个信号来确定与DUT(被测器件)相关联的静摩擦力。

    MULTI-AXIS INTEGRATED MEMS INERTIAL SENSING DEVICE ON SINGLE PACKAGED CHIP
    80.
    发明申请
    MULTI-AXIS INTEGRATED MEMS INERTIAL SENSING DEVICE ON SINGLE PACKAGED CHIP 审中-公开
    单轴集成式MEMS传感器在单包装芯片上的实现

    公开(公告)号:US20140311242A1

    公开(公告)日:2014-10-23

    申请号:US14162718

    申请日:2014-01-23

    Applicant: mCube Inc.

    Abstract: A multi-axis integrated MEMS inertial sensor device. The device can include an integrated 3-axis gyroscope and 3-axis accelerometer on a single chip, creating a 6-axis inertial sensor device. The structure is spatially with efficient use of the design area of the chip by adding the accelerometer device to the center of the gyroscope device. The design architecture can be a rectangular or square shape in geometry, which makes use of the whole chip area and maximizes the sensor size in a defined area. The MEMS is centered in the package, which is beneficial to the sensor's temperature performance. Furthermore, the electrical bonding pads of the integrated multi-axis inertial sensor device can be configured in the four corners of the rectangular chip layout. This configuration guarantees design symmetry and efficient use of the chip area.

    Abstract translation: 多轴集成MEMS惯性传感器装置。 该设备可以在单个芯片上包含一个集成的3轴陀螺仪和3轴加速度计,创建了6轴惯性传感器设备。 通过将加速度计装置添加到陀螺仪装置的中心,该结构在空间上有效地利用了芯片的设计区域。 设计架构可以是几何形状的矩形或方形形状,它利用整个芯片区域,并在一定的区域内最大化传感器尺寸。 MEMS集中在封装中,这有利于传感器的温度性能。 此外,集成的多轴惯性传感器装置的电接合焊盘可以配置在矩形芯片布局的四个角中。 该配置保证了设计的对称性和芯片面积的有效利用。

Patent Agency Ranking