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132 条记录 (耗时 0.044 秒)

    Methods for forming optoelectronic devices including heterojunction
    71.
    发明授权
    Methods for forming optoelectronic devices including heterojunction 有权

    公开(公告)号：US09136417B2

    公开(公告)日：2015-09-15

    申请号：US13451439

    申请日：2012-04-19

    申请人： Hui Nie ,  Brendan M. Kayes ,  Isik C. Kizilyalli

    发明人： Hui Nie ,  Brendan M. Kayes ,  Isik C. Kizilyalli

    IPC分类号： H01L31/0304 ,  H01L31/0735 ,  H01L31/0224 ,  H01L31/18

    摘要： Embodiments generally relate to optoelectronic semiconductor devices such as photovoltaic cells. In one aspect, a method for forming a device includes forming an absorber layer made of gallium arsenide (GaAs) and having one type of doping, and forming an emitter layer made of a different material and having a higher bandgap than the absorber layer. An intermediate layer can be formed between emitter and absorber layers. A heterojunction and p-n junction are formed between the emitter layer and the absorber layer, where the p-n junction is formed at least partially within the different material at a location offset from the heterojunction. A majority of the absorber layer can be outside of a depletion region formed by the p-n junction. The p-n junction causes a voltage to be generated in the cell in response to the cell being exposed to light at a front side.

    Photovoltaic device
    73.
    发明授权
    Photovoltaic device 有权
    光伏装置

    公开(公告)号：US08895845B2

    公开(公告)日：2014-11-25

    申请号：US12940861

    申请日：2010-11-05

    申请人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

    发明人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

    IPC分类号： H01L31/00 ,  H01L31/0304 ,  H01L31/0236 ,  H01L31/0735

    CPC分类号： H01L31/0304 ,  H01L31/022441 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/03046 ,  H01L31/065 ,  H01L31/0682 ,  H01L31/0693 ,  H01L31/0735 ,  Y02E10/50 ,  Y02E10/52 ,  Y02E10/544

    摘要： Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

    摘要翻译： 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 根据本发明的实施例的光伏（PV）单元可以具有通过外延剥离（ELO）制造的非常薄的吸收层，所有电触点位于PV装置的背面以避免阴影，和/或 使用扩散器和反射器的前侧和后侧光捕获以增加入射到PV单元的前侧的光子的吸收。 可以将多个PV单元组合成PV组，并且可以将PV组阵列连接以形成具有在低温下施加的薄金属或导电聚合物的PV模块。 与常规太阳能电池相比，这样的创新可以允许PV装置的更高的效率和灵活性。

    Photovoltaic device with increased light trapping
    74.
    发明授权
    Photovoltaic device with increased light trapping 有权
    具有增加的光捕获的光伏器件

    公开(公告)号：US08686284B2

    公开(公告)日：2014-04-01

    申请号：US12605140

    申请日：2009-10-23

    申请人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

    发明人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

    IPC分类号： H01L31/00

    CPC分类号： H01L31/0735 ,  H01L31/02168 ,  Y02E10/544

    摘要： Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) device may incorporate front side and/or back side light trapping techniques in an effort to absorb as many of the photons incident on the front side of the PV device as possible in the absorber layer. The light trapping techniques may include a front side antireflective coating, multiple window layers, roughening or texturing on the front and/or the back sides, a back side diffuser for scattering the light, and/or a back side reflector for redirecting the light into the interior of the PV device. With such light trapping techniques, more light may be absorbed by the absorber layer for a given amount of incident light, thereby increasing the efficiency of the PV device.

    摘要翻译： 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 光伏（PV）装置可以包括前侧和/或后侧光捕获技术，以尽量吸收在吸收层中尽可能多地入射到PV装置的前侧的光子。 光捕获技术可以包括前侧防反射涂层，多个窗口层，在前侧和/或后侧上的粗糙化或纹理化，用于散射光的后侧扩散器和/或用于将光重定向到的后侧反射器 PV设备的内部。 通过这种光捕获技术，对于给定量的入射光，更多的光可以被吸收层吸收，从而提高PV器件的效率。

    PHOTOVOLTAIC DEVICE WITH BACK SIDE CONTACTS
    75.
    发明申请
    PHOTOVOLTAIC DEVICE WITH BACK SIDE CONTACTS 有权
    具有背面接触的光电器件

    公开(公告)号：US20100126572A1

    公开(公告)日：2010-05-27

    申请号：US12605151

    申请日：2009-10-23

    申请人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

    发明人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

    IPC分类号： H01L31/0304 ,  H01L31/00 ,  H01L31/0232 ,  H01L31/02

    CPC分类号： H01L31/022458 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/035281 ,  H01L31/0735 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521

    摘要： Methods and apparatus for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells are provided. A photovoltaic (PV) device generally includes a window layer; an absorber layer disposed below the window layer such that electrons are generated when photons travel through the window layer and are absorbed by the absorber layer; and a plurality of contacts for external connection coupled to the absorber layer, such that all of the contacts for external connection are disposed below the absorber layer and do not block any of the photons from reaching the absorber layer through the window layer. Locating all the contacts on the back side of the PV device avoids solar shadows caused by front side contacts, typically found in conventional solar cells. Therefore, PV devices described herein with back side contacts may allow for increased efficiency when compared to conventional solar cells.

    摘要翻译： 提供了与常规太阳能电池相比，用于将电磁辐射如太阳能转换成电能的方法和装置，其效率提高。 光伏（PV）装置通常包括窗口层; 设置在窗口层下方的吸收层，使得当光子穿过窗口层并被吸收层吸收时，产生电子; 以及多个用于连接到吸收层的外部连接的触点，使得用于外部连接的所有触点都设置在吸收层下方，并且不阻挡任何光子通过窗口层到达吸收层。 定位PV装置背面的所有触点避免了由常规太阳能电池中常见的前侧触点造成的太阳阴影。 因此，与常规太阳能电池相比，具有背面接触的本文描述的PV器件可以增加效率。

    Method for fabricating a merged integrated circuit device
    76.
    发明授权
    Method for fabricating a merged integrated circuit device 有权
    用于制造合并集成电路器件的方法

    公开(公告)号：US06627963B2

    公开(公告)日：2003-09-30

    申请号：US09789254

    申请日：2001-02-20

    申请人： William T. Cochran ,  Isik C. Kizilyalli ,  Morgan J. Thoma

    发明人： William T. Cochran ,  Isik C. Kizilyalli ,  Morgan J. Thoma

    IPC分类号： H01L2976

    CPC分类号： H01L21/82345 ,  H01L21/823412 ,  H01L21/823418

    摘要： The present invention provides a process for fabricating merged integrated circuits on a semiconductor wafer substrate. The process comprises forming a gate oxide on the semiconductor wafer substrate, forming a first transistor having a first gate on the gate oxide, and forming a second transistor having a second gate on the same gate oxide. The first transistor is optimized to a first operating voltage by varying a physical property of the first gate, varying a first tub doping profile, or varying a first source/drain doping profile. The second transistor is optimized to a second operating voltage by varying a physical property of the second gate, varying a second tub doping profile, or varying a second source/drain doping profile of the second transistor. These physical characteristics may be changed in any combination or singly to achieve the determined optimization of the operating voltage of any given transistor.

    摘要翻译： 本发明提供一种在半导体晶片基板上制造合并集成电路的方法。 该工艺包括在半导体晶片衬底上形成栅极氧化物，在栅氧化层上形成具有第一栅极的第一晶体管，以及在同一栅氧化层上形成具有第二栅极的第二晶体管。 第一晶体管通过改变第一栅极的物理特性，改变第一晶体管掺杂分布或改变第一源极/漏极掺杂分布而优化为第一工作电压。 通过改变第二栅极的物理性质，改变第二晶体管掺杂分布或改变第二晶体管的第二源/漏掺杂分布，将第二晶体管优化为第二工作电压。 这些物理特性可以以任何组合或单独改变以实现所确定的任何给定晶体管的工作电压的优化。

    Compound, high-K, gate and capacitor insulator layer
    78.
    发明授权
    Compound, high-K, gate and capacitor insulator layer 失效
    复合，高K，栅极和电容绝缘层

    公开(公告)号：US06548854B1

    公开(公告)日：2003-04-15

    申请号：US08995435

    申请日：1997-12-22

    申请人： Isik C. Kizilyalli ,  Yi Ma ,  Pradip Kumar Roy

    发明人： Isik C. Kizilyalli ,  Yi Ma ,  Pradip Kumar Roy

    IPC分类号： H01L2976

    CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517

    摘要： A gate or capacitor insulator structure using a first grown oxide layer, a high-k dielectric material on the grown oxide layer, and a deposited oxide layer on the high-k dielectric material. The deposited oxide layer is preferably a densified deposited oxide layer. A conducting layer, such as a gate or capacitor plate, may overlay the densified oxide layer.

    摘要翻译： 使用第一生长氧化物层，生长的氧化物层上的高k电介质材料和高k电介质材料上的沉积氧化物层的栅极或电容器绝缘体结构。 沉积的氧化物层优选是致密化的沉积氧化物层。 诸如栅极或电容器板的导电层可以覆盖致密的氧化物层。