AC light emitting device with long-persistent phosphor and light emitting device module having the same
    72.
    发明授权
    AC light emitting device with long-persistent phosphor and light emitting device module having the same 有权
    具有长持续荧光体和发光器件模块的AC发光器件具有相同的功能

    公开(公告)号:US08810124B2

    公开(公告)日:2014-08-19

    申请号:US12581507

    申请日:2009-10-19

    摘要: Disclosed are an AC light emitting device with a long-persistent phosphor and an AC light emitting device module having the same. According to an exemplary embodiment of the present invention, the light emitting device includes a first light emitting diode chip and a second light emitting diode chip, each of which has a plurality of light emitting cells on a single substrate. Further, a first long-persistent phosphor is positioned on the first light emitting diode chip to perform wavelength conversion for a portion of light emitted from the first light emitting diode chip; and a second long-persistent phosphor is positioned on the second light emitting diode chip to perform wavelength conversion for a portion of light emitted from the second light emitting diode chip. The afterglow luminescence resulted from the second long-persistent phosphor is allowed to be different from that resulted from the first long-persistent phosphor, whereby a flicker effect of the AC light emitting device can be more alleviated.

    摘要翻译: 公开了具有长持久性荧光体和具有该荧光体的AC发光器件模块的交流发光器件。 根据本发明的示例性实施例,发光器件包括第一发光二极管芯片和第二发光二极管芯片,每个芯片在单个基板上具有多个发光单元。 此外,第一长持续荧光体位于第一发光二极管芯片上,以对从第一发光二极管芯片发射的光的一部分进行波长转换; 并且第二长持续荧光体位于第二发光二极管芯片上,以对从第二发光二极管芯片发射的光的一部分进行波长转换。 使得由第二长持续荧光体产生的余辉发光与第一长持续荧光体不同,从而可以进一步减轻AC发光器件的闪烁效应。

    Light emitting diode having electrode pads
    74.
    发明授权
    Light emitting diode having electrode pads 有权
    具有电极焊盘的发光二极管

    公开(公告)号:US08541806B2

    公开(公告)日:2013-09-24

    申请号:US12963921

    申请日:2010-12-09

    IPC分类号: H01L33/00

    摘要: The present invention relates to a light emitting diode including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the first conductive type semiconductor layer, and an insulation layer disposed between the first conductive type semiconductor layer and the second electrode pad, the insulation layer insulating the second electrode pad from the first conductive type semiconductor layer. At least one upper extension may be electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

    摘要翻译: 本发明涉及一种发光二极管,包括基板,布置在基板上的第一导电型半导体层,布置在第一导电型半导体层上的第二导电型半导体层,设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层,电连接到第一导电类型半导体层的第一电极焊盘,布置在第一导电类型半导体层上的第二电极焊盘以及设置在第一导电类型半导体层和第二导电类型半导体层之间的绝缘层 所述绝缘层将所述第二电极焊盘与所述第一导电型半导体层绝缘。 至少一个上延伸部可以电连接到第二电极焊盘,所述至少一个上延伸部电连接到第二导电类型半导体层。

    Method of fabricating light emitting diode chip
    76.
    发明授权
    Method of fabricating light emitting diode chip 有权
    制造发光二极管芯片的方法

    公开(公告)号:US08481352B2

    公开(公告)日:2013-07-09

    申请号:US13089544

    申请日:2011-04-19

    CPC分类号: H01L33/0095 H01L33/20

    摘要: The present invention provides a method of fabricating a light emitting diode chip having an active layer between an N type semiconductor layer and a P type semiconductor layer. The method comprises the steps of preparing a substrate; laminating the semiconductor layers on the substrate, the semiconductor layers having the active layer between the N type semiconductor layer and the P type semiconductor layer; and forming grooves on the semiconductor layers laminated on the substrate until the substrate is exposed, whereby inclined sidewalls are formed by the grooves in the semiconductor layers divided into a plurality of chips. According to embodiments of the present invention, a sidewall of a semiconductor layer formed on a substrate of a light emitting diode chip is inclined with respect to the substrate, whereby its directional angle is widened as compared with a light emitting diode chip without such inclination. As the directional angle of the light emitting diode chip is wider, when a white light emitting device is fabricated using the light emitting diode chip and a phosphor, light uniformity can be adjusted even though the phosphor is not concentrated at the center of the device. Thus, the overall light emitting efficiency can be enhanced by reducing a light blocking phenomenon caused by the increased amount of the phosphor distributed at the center portion.

    摘要翻译: 本发明提供一种制造在N型半导体层和P型半导体层之间具有有源层的发光二极管芯片的方法。 该方法包括以下步骤:制备基底; 在所述基板上层叠所述半导体层,所述半导体层具有在所述N型半导体层和所述P型半导体层之间的有源层; 以及在层叠在基板上的半导体层上形成凹槽,直到基板被暴露,由此通过划分成多个芯片的半导体层中的凹槽形成倾斜的侧壁。 根据本发明的实施例,形成在发光二极管芯片的基板上的半导体层的侧壁相对于基板倾斜,由此与没有倾斜的发光二极管芯片相比,其方向角度变宽。 随着发光二极管芯片的方位角变宽,当使用发光二极管芯片和荧光体制造白色发光器件时,即使荧光体不集中在器件的中心,也可以调整光均匀性。 因此,通过减少由分散在中心部分的荧光体的量增加引起的遮光现象,可以提高整体发光效率。

    Light emitting diode and method of fabricating the same
    78.
    发明授权
    Light emitting diode and method of fabricating the same 有权
    发光二极管及其制造方法

    公开(公告)号:US08395166B2

    公开(公告)日:2013-03-12

    申请号:US12811047

    申请日:2008-12-24

    IPC分类号: H01L29/205 H01L33/00

    摘要: Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.

    摘要翻译: 这里公开了一种发光二极管。 发光二极管包括支撑衬底,形成在支撑衬底上的半导体层以及位于支撑衬底和下半导体层之间的金属图案。 半导体层包括第一导电类型的上半导体层,有源层和第二导电类型的下半导体层。 半导体层在牺牲衬底上生长,并且支撑衬底与牺牲衬底是均匀的。

    Light emitting diode having light emitting cell with different size and light emitting device thereof
    80.
    发明授权
    Light emitting diode having light emitting cell with different size and light emitting device thereof 有权
    具有不同尺寸的发光单元的发光二极管及其发光装置

    公开(公告)号:US08274089B2

    公开(公告)日:2012-09-25

    申请号:US12626556

    申请日:2009-11-25

    IPC分类号: H01L29/18 H01L33/00

    摘要: There is provided a light emitting diode operating under AC power comprising a substrate; a buffer layer formed on the substrate; and a plurality of light emitting cells formed on the buffer layer to have different sizes and to be electrically isolated from one another, the plurality of light emitting cells being connected in series through metal wires.According to the present invention, light emitting cells formed in an LED have different sizes, and thus have different turn-on voltages when light is emitted under AC power, so that times when the respective light emitting cells start emitting light are different to thereby effectively reduce a flicker phenomenon.

    摘要翻译: 提供了在AC电源下工作的发光二极管,其包括基板; 形成在所述基板上的缓冲层; 以及形成在所述缓冲层上以具有不同尺寸并且彼此电隔离的多个发光单元,所述多个发光单元通过金属线串联连接。 根据本发明,形成在LED中的发光单元具有不同的尺寸,因此当在AC功率下发光时具有不同的导通电压,从而当各个发光单元开始发光的时间不同,从而有效地 减少闪烁现象。