公开(公告)号：US5038713A

公开(公告)日：1991-08-13

申请号：US354856

申请日：1989-05-22

申请人： Soichiro Kawakami ,  Masahiro Kanai ,  Takayoshi Arai ,  Tsutomu Murakami

发明人： Soichiro Kawakami ,  Masahiro Kanai ,  Takayoshi Arai ,  Tsutomu Murakami

IPC分类号： B01J19/08 ,  C23C16/27 ,  C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  C30B29/04 ,  H01J37/32 ,  H01L21/205 ,  H01L21/31 ,  H05H1/46

CPC分类号： H01J37/32357 ,  H05H1/46

摘要： A microwave plasma treating apparatus comprising a vacuum vessel, a device for introducing a microwave to the inside of the vacuum vessel by way of a microwave transmission circuit, a device for supplying a starting gas to the inside of the vacuum vessel, a device for evacuating the inside of the vacuum vessel, and a specimen holder for maintaining a specimen substrate to the inside of the vacuum vessel, wherein a cavity resonator integrated with two matching circuits is disposed in the microwave transmission circuit and a magnetic field generator is disposed to the outside of the cavity resonator, and having the following main features: (a) matching facilitated by a plunger for adjusting the axial length of the cavity resonator and cylindrical sling type irises, E-H tuner or three-stub tuner disposed at the portion of the cylindrical cavity resonator where the microwave is introduced, (b) a bell jar disposed within the cavity resonator to excite TM mode and (c) a magnetic field generator disposed to the outside of the cavity resonator to prepare a region of a great magnetic flux density in the discharging space at the inside of the cavity resonator.

公开(公告)号：US4951602A

公开(公告)日：1990-08-28

申请号：US442511

申请日：1989-11-28

申请人： Masahiro Kanai

发明人： Masahiro Kanai

IPC分类号： H01L21/205 ,  C23C16/50 ,  C23C16/54 ,  H01L21/00 ,  H01L31/04 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L21/67173 ,  C23C16/50 ,  C23C16/545 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/67236 ,  H01L31/075 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： An apparatus for continuously preparing semiconductor devices each comprising a plurality of semiconductor layers being stacked on a moving substrate web; said apparatus comprising a plurality of film-forming chambers by a number equal to the number of said stacked semiconductor layers, each of said film-forming chambers having a film-forming space and beingprovided with means For evacuating said film-forming space, means for supporting said substrate web in said film-forming space, means for maintaining said substrate web at a desired temperature and means for supplying a film-forming raw material gas into said film-forming space; each of said film-forming chambers being provided with a plasma-generating chamber for generating a plasma reactive with said film-forming raw material gas to cause the formation of a semiconductior film on said substrate web in said film-forming space; said plasma-generating chamber comprising a microwave permeable bell jar disposed in a cavity resonator integrated with two impedance matching circuits in a microwave circuit, said plasma-generating chamber being provided with a porous metal thin plate adjacent to said means for supplying a film-forming raw material gas, said plasma-generating chamber being provided with means for supplying a plasma-generating raw material gas selected from the group consisting of a hydrogen gas and a gaseous mixture composed of a hydrogen gas and a rare gas into said plasma-generating chamber; said apparatus being provided with a substrate web pay-out chamber provided with a mechanism for paying out said substrate web and a substrate take-up chamber provided with a mechanism for taking up said substrate web; said apparatus being provided with a substrate web-processing chamber at least between said substrate web pay-out chamber and the first film-forming chamber; each two of said chambers being connected by means of a connection pipe through which said substrate web can be moved; and said connection pipe being provided with means for preventing the gas of one of said chambers from entering into other chamber with an inert gas.

公开(公告)号：US4908330A

公开(公告)日：1990-03-13

申请号：US302245

申请日：1989-01-27

申请人： Takayoshi Arai ,  Masahiro Kanai ,  Soichiro Kawakami ,  Tsutomu Murakami

发明人： Takayoshi Arai ,  Masahiro Kanai ,  Soichiro Kawakami ,  Tsutomu Murakami

IPC分类号： C23C16/452 ,  C23C16/511 ,  C23C16/52

CPC分类号： C23C16/511 ,  C23C16/452 ,  C23C16/52

摘要： A process for the formation of a functional deposited film as a thin semiconductor film constituted with the group IV element or a thin semiconductor film constituted with group IV element alloy, by introducing, into a film forming space, a compound as the film-forming raw material and, if required, a compound containing an element capable of controlling valence electrons for the deposited film as the constituent element each in a gaseous state, or in a state where at least one of the compounds is activated, while forming hydrogen atoms in an excited state causing chemical reaction with at least one of the compounds in the gaseous state or in the activated state in an activation space different from the film forming space and introducing them into the film forming space, thereby forming a deposited film on a substrate, wherein the hydrogen atoms in the excited state are formed from a hydrogen gas or a gas mixture composed of a hydrogen gas and a rare gas by means of a microwave plasma generated in a plasma generation chamber disposed in a cavity resonator integrated with two impedance matching circuits in a microwave circuit and the excited state of the hydrogen atoms is controlled.

公开(公告)号：US4869931A

公开(公告)日：1989-09-26

申请号：US298219

申请日：1989-01-17

申请人： Masaaki Hirooka ,  Masahiro Kanai ,  Jun-Ichi Hanna ,  Isamu Shimizu

发明人： Masaaki Hirooka ,  Masahiro Kanai ,  Jun-Ichi Hanna ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  C23C16/30 ,  C23C16/44 ,  C23C16/452 ,  H01L21/205 ,  H01L31/18

CPC分类号： H01L31/1828 ,  Y02E10/543

摘要： A method for forming a deposited film, which comprises introducing a gaseous starting material containing an element in the Group II of the periodic table, a starting material containing an element in the Group VI of the periodic table which are gasifiable for formation of a deposited film, and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting materials into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursor of said precursors as the feeding source for the constituent element of the deposited film.

摘要翻译： 一种形成沉积膜的方法，其包括在周期表II族中引入含有元素的气态原料，该原料含有周期表第VI族元素，其可气化以形成沉积膜 和对所述原料具有氧化作用的气态卤素氧化剂进入反应空间以进行接触，从而在激发态下化学形成含有前体的多种前体，并在存在于 通过使用所述前体的至少一种前体作为沉积膜的构成元素的进料源的成膜空间。

公开(公告)号：US4853251A

公开(公告)日：1989-08-01

申请号：US831411

申请日：1986-02-20

申请人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

发明人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

IPC分类号： C23C16/30 ,  C23C16/452 ,  G03G5/043 ,  G03G5/082 ,  G03G5/10 ,  H01L21/205 ,  H01L31/075 ,  H01L31/20

CPC分类号： G03G5/08214 ,  C23C16/30 ,  C23C16/452 ,  G03G5/0433 ,  G03G5/08278 ,  G03G5/08285 ,  G03G5/102 ,  G03G5/104 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/20 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S438/931

摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with discharge energy and allowing both the species to react with each other thereby to form a deposited film on the substrate.

摘要翻译： 形成沉积膜的方法包括将含有碳和卤素的化合物分解形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）引入到容纳基材的膜形成空间中 其与所述活性物质（A）彼此分开反应，然后向其提供放电能量并允许物质彼此反应，从而在基底上形成沉积膜。

公开(公告)号：US4851302A

公开(公告)日：1989-07-25

申请号：US221761

申请日：1988-07-20

申请人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai ,  Masahiro Kanai

发明人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai ,  Masahiro Kanai

IPC分类号： H01L31/04 ,  G06F9/48 ,  H01L21/205 ,  H01L21/365 ,  H01L31/0248 ,  H01L31/0296 ,  H01L31/0392 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/02963 ,  H01L21/0237 ,  H01L21/0256 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/0392 ,  H01L31/068 ,  H01L31/1828 ,  Y02E10/543 ,  Y02E10/547 ,  Y10T428/12528 ,  Y10T428/12792

摘要： There is provided a functional ZnSe:H deposited film composed of zinc atoms, selenium atoms, and at least hydrogen atoms, with the content of hydrogen atoms being 1 to 4 atomic % and the ratio of crystal grains per unit volume being 65 to 85 vol %. It is capable of efficient doping and is stable to irradiation. It can be made into a high conductivity p-type of n-type ZnSe:H:M film by doping. It can be efficiently deposited on a non-single crystal substrate such as metal, glass, and synthetic resin which was incapable of efficient depositing. Thus the invention makes it possible to form a high-functional device such as a photovoltaic element of ZnSe film on a non-single crystal substrate.

摘要翻译： 提供了由锌原子，硒原子和至少氢原子组成的功能性ZnSe：H沉积膜，氢原子的含量为1〜4原子％，单位体积的结晶比为65〜85体积％ ％。 它能够高效掺杂，对辐照稳定。 可以通过掺杂制成高导电性p型n型ZnSe：H：M膜。 它可以有效地沉积在不能有效沉积的非单晶衬底如金属，玻璃和合成树脂上。 因此，本发明使得可以在非单晶衬底上形成诸如ZnSe膜的光电元件的高功能器件。

公开(公告)号：US4771015A

公开(公告)日：1988-09-13

申请号：US947029

申请日：1986-12-29

申请人： Masahiro Kanai ,  Jun-Ichi Hanna ,  Isamu Shimizu

发明人： Masahiro Kanai ,  Jun-Ichi Hanna ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  C23C16/22 ,  C23C16/30 ,  C23C16/44 ,  C23C16/452 ,  C23C16/50 ,  G03G5/08 ,  H01L21/205 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  H01L21/20

CPC分类号： C23C16/452 ,  C23C16/22 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S438/935

摘要： A method for producing an electronic device having a multi-layer structure comprising one or more band gap controlled semiconductor thin layers formed on a substrate comprises forming at least one of said band gap controlled semiconductor thin layers according to the plasma CVD method and forming at least one of the other constituent layers according to the method comprising introducing a gaseous starting material for film formation and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.

摘要翻译： 一种制造具有多层结构的电子器件的方法，该多层结构包括在衬底上形成的一个或多个带隙控制半导体薄层，包括根据等离子体CVD方法形成至少一个所述带隙控制的半导体薄层，并形成至少 根据包括引入用于成膜的气态起始材料和具有将所述原料氧化成反应空间的特性的气态卤素氧化剂的方法之一，以在其间进行化学接触从而形成多种前体，包括 在激发态中的前体，并将这些前体中的至少一种转移到与反应空间连通的成膜空间中，作为沉积膜的构成元素的进料源。

公开(公告)号：US4726963A

公开(公告)日：1988-02-23

申请号：US61003

申请日：1987-06-09

申请人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

发明人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

IPC分类号： C23C16/22 ,  C23C16/48 ,  H01L21/205 ,  B05D3/06

CPC分类号： H01L21/0245 ,  C23C16/22 ,  C23C16/482 ,  C23C16/483 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then irradiating them with light energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.

摘要翻译： 用于形成沉积膜的方法包括将容纳基材的成膜空间引入其中包含通过分解含有锗和卤素的化合物形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B） 其与所述活性物质（A）分开反应，然后用光能照射它们，从而允许物质彼此反应，从而在基底上形成沉积膜。

公开(公告)号：US4701392A

公开(公告)日：1987-10-20

申请号：US719980

申请日：1985-04-04

申请人： Keishi Saitoh ,  Masahiro Kanai ,  Tetsuo Sueda ,  Teruo Misumi ,  Yoshio Tsuezuki ,  Kyosuke Ogawa

发明人： Keishi Saitoh ,  Masahiro Kanai ,  Tetsuo Sueda ,  Teruo Misumi ,  Yoshio Tsuezuki ,  Kyosuke Ogawa

IPC分类号： G03G5/08 ,  G03G5/082 ,  G03G5/10 ,  G03G5/14 ,  H01L31/0248 ,  G03G5/085

CPC分类号： G03G5/08 ,  G03G5/08214 ,  G03G5/08242 ,  G03G5/10 ,  G03G5/102 ,  G03G5/144

摘要： A light receiving member comprises a substrate for light receiving member, a surface layer having reflection preventive function and a light receiving layer of a multi-layer structure having at least one photosensitive layer comprising an amorphous material containing silicon atoms on the substrate, said light receiving layer having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being arranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction.

摘要翻译： 光接收元件包括用于光接收元件的基底，具有反射防止功能的表面层和具有至少一个感光层的多层结构的光接收层，该感光层包含在基底上含有硅原子的非晶态材料，所述光接收 层，其在短范围内具有至少一对非平行界面，并且所述非平行界面在垂直于层厚度方向的平面内沿至少一个方向大量布置。

公开(公告)号：US4696882A

公开(公告)日：1987-09-29

申请号：US753011

申请日：1985-07-08

申请人： Keishi Saitoh ,  Tetsuo Sueda ,  Kyosuke Ogawa ,  Teruo Misumi ,  Yoshio Tsuezuki ,  Masahiro Kanai

发明人： Keishi Saitoh ,  Tetsuo Sueda ,  Kyosuke Ogawa ,  Teruo Misumi ,  Yoshio Tsuezuki ,  Masahiro Kanai

IPC分类号： G03G5/082 ,  G03G5/10 ,  G03G5/085

CPC分类号： G03G5/08228 ,  G03G5/10

摘要： A light-receiving member comprises a substrate and a light-receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms and a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductivity provided successively from the substrate side, said light-receiving layer having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being aranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction, said non-parallel interfaces being connected to one another smoothly in the direction in which they are arranged.

摘要翻译： 光接收部件包括基板和具有第一层的多层结构的光接收层，该第一层包括含有硅原子和锗原子的非晶态材料，以及第二层，其包含含有硅原子的非晶态材料并呈现出依次提供的光电导性 所述光接收层在短距离范围内具有至少一对非平行界面，并且所述非平行界面在垂直于层厚度方向的平面内的至少一个方向上大量排列 所述非平行接口在它们被布置的方向上平滑地相互连接。