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公开(公告)号：US07608206B1
公开(公告)日：2009-10-27
申请号：US12105683
申请日：2008-04-18
IPC分类号： H01B1/08
CPC分类号： C01G55/001 , C01G55/00 , C01P2002/54 , C01P2002/72 , C01P2004/61 , C01P2004/62 , C03C8/14 , C04B41/009 , C04B41/5022 , C04B41/52 , C04B41/86 , C04B41/90 , C04B2111/00844 , H01B1/22 , H01C7/003 , H01C17/06533 , C04B35/10 , C04B41/4539 , C04B41/4572 , C04B41/5027 , C04B41/5116
摘要： A non-lead composition for use as a thick-film resistor paste in electronic applications. The composition comprises particles of Li2RuO3 of diameter between 0.5 and 5 microns and a lead-free frit. The particles have had the lithium at or near primarily the surface of the particle at least partially exchanged for atoms of other metals.
摘要翻译： 用作电子应用中的厚膜电阻膏的非铅组合物。 该组合物包含直径为0.5至5微米的Li2RuO3颗粒和无铅玻璃料。 颗粒已经使锂在或接近主要表面的颗粒至少部分地与其它金属的原子交换。
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公开(公告)号：US20090110939A1
公开(公告)日：2009-04-30
申请号：US12347076
申请日：2008-12-31
CPC分类号： C03C3/068 , C03C3/19 , C03C3/21 , C03C3/253 , H01L31/00 , H05K1/0306 , Y10T29/49117 , Y10T428/24926
摘要： A glass composition consisting essentially of, based on mole percent, 46-56% B2O3, 0.5-8.5% P2O5, SiO2 and mixtures thereof, 20-50% CaO, 2-15% Ln2O3 where Ln is selected from the group consisting of rare earth elements and mixtures thereof; 0-6% M′2O where M′ is selected from the group consisting of alkali elements; and 0-10% Al2O3, with the proviso that the composition is water millable.
摘要翻译： 一种玻璃组合物，其基本上由摩尔百分数组成，为46-56％B2O3,0.5-8.5％P2O5，SiO2及其混合物，20-50％CaO，2-15％Ln2O3，其中Ln选自稀有金属 地球元素及其混合物; 0-6％M'2O其中M'选自碱元素; 和0-10％的Al 2 O 3，条件是组合物是可水洗的。
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73.发明申请CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES: FLUX MATERIALS 有权用于制造半导体器件的导电组合物和方法：通量材料公开(公告)号：US20090104457A1
公开(公告)日：2009-04-23
申请号：US12254264
申请日：2008-10-20
摘要： Described herein are a silicon semiconductor device and a conductive paste, including a flux material, for use in the front side of a solar cell device.
摘要翻译： 这里描述了一种用于太阳能电池装置正面的硅半导体器件和包括助焊剂材料的导电膏。
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74.发明授权公开(公告)号：US07435361B2
公开(公告)日：2008-10-14
申请号：US11106259
申请日：2005-04-14
CPC分类号： H01L31/022408 , C03C8/02 , C03C8/04 , C03C8/06 , C03C8/18 , H01B1/22 , H01L31/022425 , H05K1/092 , Y02E10/50
摘要： The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) zinc-containing additive; (c) glass frit wherein said glass frit is lead-free; dispersed in (d) organic medium. The present invention is further directed to an electrode formed from the composition above wherein said composition has been fired to remove the organic vehicle and sinter said glass particles. Still further, the invention is directed to a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition detailed above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode. Additionally, the present invention is directed to a semiconductor device formed by the method detailed above and a semiconductor device formed from the thick film conductive composition detailed above.
摘要翻译： 本发明涉及一种厚膜导电组合物，其包含：（a）导电银粉; （b）含锌添加剂; （c）玻璃料，其中所述玻璃料是无铅的; 分散在（d）有机介质中。 本发明还涉及由上述组合物形成的电极，其中所述组合物已被烧制以除去有机载体并烧结所述玻璃颗粒。 另外，本发明涉及从由半导体构成的结构元件制造半导体器件的方法，所述结构元件由在半导体的主表面上形成的pn结和绝缘膜构成，包括以下步骤：（a）施加到所述绝缘 上面详细介绍了薄膜组成; 和（b）烧制所述半导体，绝缘膜和厚膜组合物以形成电极。 另外，本发明涉及通过上述方法形成的半导体器件以及由上述详细描述的厚膜导电组合物形成的半导体器件。
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75.发明授权Process for the constrained sintering of asymmetrically configured dielectric layers 失效用于非对称构造的电介质层的约束烧结的方法公开(公告)号：US06827800B2
公开(公告)日：2004-12-07
申请号：US10430081
申请日：2003-05-06
IPC分类号： B32B3126
CPC分类号： H01L23/49894 , C03B19/06 , C03C14/004 , H01L2924/0002 , H01L2924/09701 , H05K1/0306 , H05K3/4629 , Y10T428/12618 , Y10T428/1476 , Y10T428/24926 , H01L2924/00
摘要： A method to produce a distortion-free asymmetrical low-temperature co-fired ceramic structure comprising at least one layer of glass-containing internal constraining tape and at least one layer of glass-containing primary tape wherein the internal constraining tape and the primary tape are laminated to form an asymmetrical laminate and wherein a release layer is deposited on at least one surface of the laminate forming an assembly, wherein the surface is opposite the position of greatest asymmetry of the laminated layers and wherein the assembly is thermally processed producing a structure exhibiting an interactive suppression of x,y shrinkage.
摘要翻译： 一种产生无变形的不对称低温共烧陶瓷结构的方法，其包括至少一层含玻璃的内部约束带和至少一层含玻璃的主带，其中内部约束带和主带是 层压以形成不对称层压板，并且其中在形成组件的层压体的至少一个表面上沉积剥离层，其中所述表面与层压层的最大不对称位置相反，并且其中所述组件被热加工，产生显示 互相抑制x，y收缩。
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76.发明授权Thick-film pastes containing lead—tellurium—lithium—titanium—oxides, and their use in the manufacture of semiconductor devices 有权含铅碲 - 锂钛氧化物的厚膜糊料及其在制造半导体器件中的应用公开(公告)号：US08889979B2
公开(公告)日：2014-11-18
申请号：US13100540
申请日：2011-05-04
申请人： Alan Frederick Carroll , Kenneth Warren Hang , Brian J. Laughlin , Kurt Richard Mikeska , Carmine Torardi , Paul Douglas Vernooy
发明人： Alan Frederick Carroll , Kenneth Warren Hang , Brian J. Laughlin , Kurt Richard Mikeska , Carmine Torardi , Paul Douglas Vernooy
IPC分类号： H01L31/00 , H01L21/44 , H01B1/02 , H01B1/22 , H01L31/0224 , B22F1/00 , B22F7/04 , B22F7/08 , C03C8/10 , C03C8/12 , C04B35/01 , H01B1/16 , H01L31/18 , H01L31/0264
CPC分类号： H01L31/022425 , B22F1/0059 , B22F1/007 , B22F7/04 , B22F7/08 , B22F2007/047 , C03C8/10 , C03C8/12 , C04B35/01 , H01B1/16 , H01B1/22 , H01L31/0264 , H01L31/1884 , H01L2924/0002 , Y02E10/50 , Y02E10/52 , H01L2924/00
摘要： The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-lithium-titanium-oxide dispersed in an organic medium.
摘要翻译： 本发明提供一种用于印刷具有一个或多个绝缘层的太阳能电池装置的正面的厚膜糊剂。 厚膜糊包含分散在有机介质中的导电金属和铅 - 碲 - 锂 - 二氧化钛。
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公开(公告)号：US08790550B2
公开(公告)日：2014-07-29
申请号：US13472101
申请日：2012-05-15
摘要： The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Pb-free bismuth-tellurium oxide both dispersed in an organic medium, wherein the paste is fireable at temperatures below 420° C. The paste is especially useful for forming electrodes on substrates such as glass or films, particularly electrochromic glass or films, that would be damaged by higher firing temperatures. The present invention is further directed to a device comprising an electrode formed from the paste composition and, in particular, to an electrochromic device comprising such an electrode.
摘要翻译： 本发明涉及一种导电厚膜糊料组合物，其包含Ag和不含Pb的铋 - 氧化碲，两者分散在有机介质中，其中该糊剂可在低于420℃的温度下燃烧。该糊剂特别适用于形成电极 在诸如玻璃或薄膜，特别是电致变色玻璃或薄膜的基底上，会被更高的烧制温度损坏。 本发明进一步涉及包括由糊状组合物形成的电极的装置，特别涉及包括这种电极的电致变色装置。
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78.发明授权Thick film resistive heater compositions comprising Ag and RuO2, and methods of making same 有权包含Ag和RuO 2的厚膜电阻加热器组合物及其制备方法公开(公告)号：US08617428B2
公开(公告)日：2013-12-31
申请号：US13292642
申请日：2011-11-09
IPC分类号： H01B1/22 , B05D5/12 , H01C17/065
CPC分类号： H01B1/22 , C03C3/062 , C03C3/064 , C03C3/066 , C03C8/14 , C03C8/16 , C03C8/18 , H01C17/06526 , H01C17/06533 , H05B3/12
摘要： Thick film resistor paste compositions, and methods for making the thick film compositions are disclosed. The compositions include a resistor composition dispersed in an organic vehicle. The resistor composition has 3 to 60% by weight RuO2 conductive material, 5 to 75% by weight Ag conductive material, 15 to 60% by weight glass frit and optionally up to 10% by weight copper oxide or precursor thereof, and up to 20% by weight bismuth oxide or precursor thereof.The resistor composition when printed to a dry thickness and fired at a temperature between 750° C. and 950° C. achieves a sheet resistivity between 10 and 10,000 milliohms/square and a hot temperature coefficient of resistivity of 1000 ppm/C or higher. The fired resistor composition may achieve a resistance thickness ratio (Rtr) value between 0.75 and 1.50.
摘要翻译： 公开了厚膜电阻膏组合物和制备厚膜组合物的方法。 组合物包括分散在有机载体中的电阻组合物。 电阻组合物具有3至60重量％的RuO 2导电材料，5至75重量％的Ag导电材料，15至60重量％的玻璃料和任选的至多10重量％的氧化铜或其前体，以及最多20个 重量铋氧化物或其前体。 当印刷到干燥厚度并在750℃和950℃之间的温度下烧结时，电阻器组合物的电阻率达10至10,000毫欧/平方厘米，电阻率的热温度系数为1000ppm /℃或更高。 烧结的电阻组合物可以实现0.75至1.50之间的电阻厚度比（Rtr）值。
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公开(公告)号：US08486826B2
公开(公告)日：2013-07-16
申请号：US12783761
申请日：2010-05-20
申请人： Russell David Anderson , Kenneth Warren Hang , Shih-Ming Kao , Giovanna Laudisio , Cheng-Nan Lin , Chun-Kwei Wu
发明人： Russell David Anderson , Kenneth Warren Hang , Shih-Ming Kao , Giovanna Laudisio , Cheng-Nan Lin , Chun-Kwei Wu
IPC分类号： H01L31/0392 , H01L21/283 , H01L29/40
CPC分类号： H01L31/022433 , C03C8/02 , C03C8/10 , C03C8/24 , H01B1/16 , H01L31/022425 , Y02E10/50
摘要： A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: (1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer to form a bottom set of thin parallel finger lines, (2) printing and drying a metal paste B comprising an inorganic content comprising 0.2 to 3 wt.-% of glass frit over the bottom set of finger lines, wherein the metal paste B is printed in a grid pattern which comprises (i) thin parallel finger lines forming a top set of finger lines superimposing the bottom set of finger lines and (ii) busbars intersecting the finger lines at right angle, and (3) firing the double-printed silicon wafer, wherein the inorganic content of metal paste B contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.
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公开(公告)号：US20130074917A1
公开(公告)日：2013-03-28
申请号：US13428434
申请日：2012-03-23
申请人： Kenneth Warren Hang , Giovanna Laudisio , John McKean Oleksyn , Jason Kenneth Parsons , Rosalynne Sophie Watt
发明人： Kenneth Warren Hang , Giovanna Laudisio , John McKean Oleksyn , Jason Kenneth Parsons , Rosalynne Sophie Watt
IPC分类号： H01L31/18 , H01L31/0224
CPC分类号： H01L31/18 , H01L31/022425 , H01L31/02245 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A process for the production of a MWT silicon solar cell, wherein a conductive metal paste with no or only poor fire-through capability is applied, dried and fired to form a continuous metallization comprising a top set of conductive metal collector lines and a metallization of the inside of the holes of an n-type MWT silicon solar cell wafer, wherein the top set of conductive metal collector lines superimposes a bottom set of conductive metal collector lines on the front-side of the n-type MWT silicon solar cell wafer, said bottom set of conductive metal collector lines having no contact with the inside of the holes.
摘要翻译： 一种用于生产MWT硅太阳能电池的方法，其中施加没有或仅仅具有差的穿透能力的导电金属浆料，干燥和烧制以形成连续的金属化，其包括顶部导电金属收集器线组和金属化 n型MWT硅太阳能电池晶片的孔的内部，其中顶层导电金属集电体线在n型MWT硅太阳能电池晶片的正面上叠加一组导电金属集电体线， 所述底部的导电金属集电器线组不与孔的内部接触。
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