公开(公告)号：US06774021B2

公开(公告)日：2004-08-10

申请号：US10456487

申请日：2003-06-09

申请人： Toshiaki Fukunaga ,  Mitsuru Sawano

发明人： Toshiaki Fukunaga ,  Mitsuru Sawano

IPC分类号： H01L2100

CPC分类号： H01L21/32051 ,  C25D1/003 ,  C25D5/02 ,  C25D7/12 ,  H05K1/162 ,  H05K1/167 ,  H05K3/107 ,  H05K3/125 ,  H05K3/182 ,  H05K3/184 ,  H05K3/465 ,  H05K3/4661 ,  H05K3/4685 ,  H05K2201/09909 ,  H05K2203/013

摘要： A pattern forming method has the steps of: forming a pattern by discharging droplets of a conductive material forming solution onto an insulating substrate; forming a conductive layer pattern on the pattern by discharging droplets of a solution which becomes a growth core; and forming a metal pattern by immersing the conductive layer pattern in a plating liquid. The pattern forming method may further have the step of forming a protective layer on a surface of the metal pattern by discharging droplets of an insulating material forming solution except at regions which are to become electrodes of the metal pattern.

公开(公告)号：US06709513B2

公开(公告)日：2004-03-23

申请号：US10188038

申请日：2002-07-03

申请人： Toshiaki Fukunaga ,  Toshiaki Kuniyasu ,  Mitsugu Wada ,  Yoshinori Hotta

发明人： Toshiaki Fukunaga ,  Toshiaki Kuniyasu ,  Mitsugu Wada ,  Yoshinori Hotta

IPC分类号： C30B2504

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265

摘要： In a process for producing a substrate for use in a semiconductor element: a porous anodic alumina film having a great number of minute pores is formed on a surface of a base substrate; the surface of the base substrate is etched by using the porous anodic alumina film as a mask so as to form a great number of pits on the surface of the base substrate; the porous anodic alumina film is removed; and a GaN layer is formed on the surface of the base substrate by crystal growth.

摘要翻译： 在半导体元件用基板的制造方法中，在基板的表面上形成具有大量微小孔的多孔阳极氧化铝膜， 通过使用多孔阳极氧化铝膜作为掩模蚀刻基底基板的表面，以在基底表面上形成大量凹坑; 去除多孔阳极氧化铝膜; 并且通过晶体生长在基板的表面上形成GaN层。

公开(公告)号：US06643306B2

公开(公告)日：2003-11-04

申请号：US09984798

申请日：2001-10-31

申请人： Toshiaki Fukunaga

发明人： Toshiaki Fukunaga

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/32333 ,  H01S5/3403 ,  H01S5/3406

摘要： In a semiconductor laser device having a substrate and an active region, the active region includes an active layer between tensile strain optical waveguide layers. The active layer includes at least one compressive strain quantum well sublayer. When the active layer includes more than one compressive strain quantum well sublayer, the active layer further includes at least one barrier sublayer being formed between the more than one quantum well sublayer and having an identical amount of tensile strain to that of the optical waveguide layers. The absolute value of a sum of a product of the strain and the total thickness of the at least one quantum well sublayer and a product of the strain and the total thickness of the optical waveguide layers and the at least one barrier sublayer (if any) is equal to or smaller than 0.05 nm.

公开(公告)号：US06546033B2

公开(公告)日：2003-04-08

申请号：US09984852

申请日：2001-10-31

申请人： Toshiaki Fukunaga

发明人： Toshiaki Fukunaga

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/164 ,  H01S5/2004 ,  H01S5/2231 ,  H01S5/3403 ,  H01S5/3434 ,  H01S5/34373 ,  H01S5/34386

摘要： In a process for producing a semiconductor laser device, an n-type cladding layer, an n-type or i-type Inx2Ga1−x2As1−y2Py2 first lower optical waveguide layer, an i-type Inx5Ga1−x5P intermediate layer, an i-type Inx2Ga1−x2As1−y2Py2 second lower optical waveguide layer, an Inx1Ga1−x1As1−y1Py1 compressive strain active layer, a p-type or i-type Inx2Ga1−x2As1−y2Py2 first upper optical waveguide layer, and an Inx5Ga1−x5P cap layer are formed on an n-type GaAs substrate. Then, near-edge portions of the cap layer are etched off with a hydrochloric acid etchant, and near-edge portions of the active region above the intermediate layer are etched off with a sulfuric acid etchant so as to produce spaces in vicinities of end facets. Next, the spaces are filled with a p-type Inx2Ga1−x2As1−y2Py2 second upper optical waveguide layer formed over the cap layer, and a p-type upper cladding layer is formed on the second upper optical waveguide layer.

公开(公告)号：US06456638B1

公开(公告)日：2002-09-24

申请号：US09500419

申请日：2000-02-08

申请人： Toshiaki Fukunaga

发明人： Toshiaki Fukunaga

IPC分类号： H01S500

CPC分类号： H01S5/32341 ,  H01S5/1064 ,  H01S5/50 ,  H01S2304/12

摘要： A semiconductor laser device contains a pair of electrodes; a conductive substrate connected to one of the pair of electrodes; a lower cladding layer formed on the conductive substrate; a lower optical waveguide layer formed on the lower cladding layer; a quantum well active layer formed on the lower optical waveguide layer; an upper optical waveguide layer formed on the quantum well active layer; an upper cladding layer formed on the upper optical waveguide layer; and a contact layer formed on the upper cladding layer. The other of the pair of electrodes is formed on the contact layer, and the conductive substrate is made of InGa material. The lower cladding layer is made of one of InGaN and InGaAlN material and has a composition which causes a strain not less than −0.01 and not greater than 0.01 between the lower cladding layer and the conductive substrate.

摘要翻译： 半导体激光装置包含一对电极; 连接到所述一对电极之一的导电基板; 形成在导电性基板上的下部包层; 形成在下包层上的下光波导层; 形成在下光波导层上的量子阱活性层; 形成在量子阱活性层上的上光波导层; 形成在上光波导层上的上包层; 以及形成在上包层上的接触层。 一对电极中的另一个形成在接触层上，导电基板由InGa材料制成。 下包层由InGaN和InGaAlN材料之一制成，并且具有在下包层和导电基板之间产生不小于0.01且不大于0.01的应变的组成。

公开(公告)号：US06400743B1

公开(公告)日：2002-06-04

申请号：US09634703

申请日：2000-08-07

申请人： Toshiaki Fukunaga ,  Mitsugu Wada

发明人： Toshiaki Fukunaga ,  Mitsugu Wada

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/0655 ,  H01S5/209 ,  H01S5/2231 ,  H01S5/3403 ,  H01S5/3434

摘要： In a semiconductor laser device: an n-type lower cladding layer; a lower optical waveguide layer; a compressive strain quantum well active layer made of Inx3Ga1-x3As1-y3Py3, where 0

摘要翻译： 在半导体激光器件中：n型下包层; 下部光波导层; 由Inx3Ga1-x3As1-y3Py3制成的压应变量子阱有源层，其中0

公开(公告)号：US06127691A

公开(公告)日：2000-10-03

申请号：US199815

申请日：1998-11-25

申请人： Toshiaki Fukunaga ,  Mitsugu Wada

发明人： Toshiaki Fukunaga ,  Mitsugu Wada

IPC分类号： H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

CPC分类号： B82Y20/00 ,  H01S5/343 ,  H01S5/34313 ,  H01S5/2009 ,  H01S5/32333 ,  H01S5/3403

摘要： A semiconductor laser device comprises a GaAs substrate, a first cladding layer having either one of p-type electrical conductivity and n-type electrical conductivity, a first optical waveguide layer, an In.sub.x2 Ga.sub.1-x2 As.sub.1-y2 P.sub.y2 first barrier layer, an In.sub.x3 Ga.sub.1-x3 As.sub.1-y3 P.sub.y3 quantum well active layer, an In.sub.x2 Ga.sub.1-x2 As.sub.1-y2 P.sub.y2 second barrier layer, a second optical waveguide layer, and a second cladding layer having the other electrical conductivity, the layers being overlaid in this order on the substrate. Each cladding layer and each optical waveguide layer have compositions, which are lattice matched with the substrate. Each of the first and second barrier layers has a tensile strain with respect to the substrate and is set such that a total layer thickness of the barrier layers may be 10 nm to 30 nm, and a product of a strain quantity of the tensile strain and the total layer thickness may be 0.05 nm to 0.2 nm. The active layer has a composition, which is lattice matched with the substrate, or a composition, which has a tensile strain of at most 0.003 with respect to the substrate.

摘要翻译： 半导体激光器件包括GaAs衬底，具有p型导电性和n型导电性中的任一种的第一覆盖层，第一光波导层，Inx2Ga1-x2As1-y2Py2第一阻挡层，Inx3Ga1-x3As1- y3Py3量子阱有源层，Inx2Ga1-x2As1-y2Py2第二阻挡层，第二光波导层和具有另一导电性的第二覆层，这些层依次叠置在基板上。 每个包覆层和每个光波导层具有与衬底晶格匹配的组成。 第一和第二阻挡层中的每一个相对于基板具有拉伸应变，并且被设置为使得阻挡层的总层厚度可以为10nm至30nm，并且拉伸应变的应变量和 总层厚度可以为0.05nm至0.2nm。 活性层具有与基材晶格匹配的组成或相对于基材具有至多0.003的拉伸应变的组合物。

公开(公告)号：US6014388A

公开(公告)日：2000-01-11

申请号：US841592

申请日：1997-04-30

申请人： Toshiaki Fukunaga

发明人： Toshiaki Fukunaga

IPC分类号： G02F1/35 ,  G02F1/37 ,  H01S5/50 ,  H01S3/30

CPC分类号： H01S5/50 ,  G02F1/37

摘要： A short wavelength laser includes a light source having a fundamental generating portion which emits fundamental wave and a wavelength convertor which converts the fundamental wave to its second harmonic. A light amplifier amplifies the second harmonic.

摘要翻译： 短波长激光器包括具有发射基波的基本发生部分的光源和将基波转换成其二次谐波的波长转换器。 光放大器放大二次谐波。

公开(公告)号：US5617437A

公开(公告)日：1997-04-01

申请号：US561465

申请日：1995-11-21

申请人： Toshiaki Fukunaga

发明人： Toshiaki Fukunaga

IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34326 ,  H01S5/2004 ,  H01S5/22 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/32333 ,  H01S5/3409

摘要： A semiconductor laser comprises an active layer, optical waveguide layers formed on opposite sides of the active layer, and cladding layers. The active layer is constituted of an InGaAsP type of compound semiconductor. Each of the optical waveguide layers is constituted of an InGaAsP type of quarternary compound semiconductor, in which the content of As in the Group-V elements is at least 2%, or an InGaAlAsP type of five-element compound semiconductor, in which the content of As in the Group-V elements falls within the range of 2% to 10%. Each of the cladding layers is constituted of an InGaAsP type of quarternary compound semiconductor, in which the content of As in the Group-V elements falls within the range of 2% to 10%, or an InGaAlAsP type of five-element compound semiconductor, in which the content of As in the Group-V elements falls within the range of 2% to 10%.

摘要翻译： 半导体激光器包括有源层，形成在有源层的相对侧上的光波导层和包覆层。 有源层由InGaAsP型化合物半导体构成。 每个光波导层由In-GaAsP类型的V族元素中的As含量至少为2％的InGaAsP型或五元素化合物半导体的InGaAlAsP型构成，其中含量 的V族元素的含量在2％〜10％的范围内。 每个包覆层由In-GaAsP型四元化合物半导体构成，其中V族元素中的As含量在2％至10％的范围内，或者是InGaAlAsP型的五元素化合物半导体， 其中V族元素中的As含量在2％至10％的范围内。

公开(公告)号：US4977569A

公开(公告)日：1990-12-11

申请号：US382294

申请日：1989-07-20

申请人： Ryozo Furukawa ,  Keisuke Shinozaki ,  Toshiaki Fukunaga

发明人： Ryozo Furukawa ,  Keisuke Shinozaki ,  Toshiaki Fukunaga

IPC分类号： H01S5/00 ,  H01S5/24 ,  H01S5/40

CPC分类号： H01S5/24 ,  H01S5/4031

摘要： An integrated phase-locked semiconductor laser wherein a plurality of waveguide paths extend in parallel to each other. A current blocking layer is formed on one of opposite major surfaces of a semiconductor substrate and is divided into a plurality of regions by a plurality of stripe-like channels. Each of the channels has a depth which reaches at least the above-mentioned major surface of the substrate. A first cladding layer covers the surface of the current blocking layer and those regions of the substrate which are exposed to the channels. A waveguide layer is deposited on the first cladding layer and has a surface opposite to the first cladding layer which is substantially flat. An active layer, a reflecting layer, a second cladding layer and a cap layer are deposited one upon another on the waveguide layer layer. The waveguide layer has an effective refractive index which sequentially decreases in the order of first regions individually associated with the plurality of channels, second regions individually associated with interchannel regions each intervening between nearby channels, and third regions located at opposite sides of the plurality of channels relatively to each other.