利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

138 条记录 (耗时 0.04 秒)

    Tone inversion with partial underlayer etch for semiconductor device formation
    71.
    发明授权
    Tone inversion with partial underlayer etch for semiconductor device formation 失效
    用于半导体器件形成的部分底层蚀刻的色调反演

    公开(公告)号：US08470711B2

    公开(公告)日：2013-06-25

    申请号：US12952248

    申请日：2010-11-23

    申请人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  Steven J. Holmes ,  Yunpeng Yin

    发明人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  Steven J. Holmes ,  Yunpeng Yin

    IPC分类号： H01L21/44

    CPC分类号： H01L23/00 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for tone inversion for integrated circuit fabrication includes providing a substrate with an underlayer on top of the substrate; creating a first pattern, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; covering the first pattern with a layer of image reverse material (IRM); and etching the second pattern into the substrate. A structure for tone inversion for integrated circuit fabrication includes a substrate; a partially etched underlayer comprising a first pattern located over the substrate, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; and an image reversal material (IRM) layer located over the partially etched underlayer.

    摘要翻译： 用于集成电路制造的色调反转的方法包括：在衬底的顶部上提供具有底层的衬底; 产生第一图案，所述第一图案被部分地蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露位于所述底层下方的所述基板; 用一层图像反向材料（IRM）覆盖第一个图案; 并将第二图案刻蚀成衬底。 用于集成电路制造的色调反转的结构包括：衬底; 部分蚀刻的底层包括位于所述衬底上方的第一图案，所述第一图案被部分蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露 底层位于底层下方; 以及位于部分蚀刻的底层上方的图像反转材料（IRM）层。

    SIDEWALL IMAGE TRANSFER PROCESS
    74.
    发明申请
    SIDEWALL IMAGE TRANSFER PROCESS 有权
    边框图像传输过程

    公开(公告)号：US20120244711A1

    公开(公告)日：2012-09-27

    申请号：US13069536

    申请日：2011-03-23

    申请人： Yunpeng Yin ,  John C. Arnold ,  Matthew E. Colburn ,  Sean D. Burns

    发明人： Yunpeng Yin ,  John C. Arnold ,  Matthew E. Colburn ,  Sean D. Burns

    IPC分类号： H01L21/31

    CPC分类号： H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

    摘要： An improved method of performing sidewall spacer imager transfer is presented. The method includes forming a set of sidewall spacers next to a plurality of mandrels, the set of sidewall spacers being directly on top of a hard-mask layer; transferring image of at least a portion of the set of sidewall spacers to the hard-mask layer to form a device pattern; and transferring the device pattern from the hard-mask layer to a substrate underneath the hard-mask layer.

    摘要翻译： 提出了一种执行侧壁间隔成像器传输的改进方法。 该方法包括在多个心轴旁边形成一组侧壁间隔物，该组侧壁间隔物直接位于硬掩模层的顶部上; 将所述一组侧壁间隔物的至少一部分图像转印到所述硬掩模层以形成器件图案; 并将器件图案从硬掩模层转移到硬掩模层下面的衬底。

    Step and Flash Imprint Lithography
    75.
    发明申请
    Step and Flash Imprint Lithography 审中-公开
    步骤和闪光印记平版印刷

    公开(公告)号：US20120133078A1

    公开(公告)日：2012-05-31

    申请号：US13364101

    申请日：2012-02-01

    申请人： Carlton Grant Willson ,  Matthew E. Colburn

    发明人： Carlton Grant Willson ,  Matthew E. Colburn

    IPC分类号： B29C39/20 ,  C08G77/00 ,  C07F7/08 ,  C01B33/04 ,  C07F7/18

    CPC分类号： B82Y10/00 ,  B29C43/003 ,  B29C43/021 ,  B29C2043/025 ,  B82Y40/00 ,  G03F7/0002 ,  H05K3/061 ,  Y10S977/887 ,  Y10S977/897

    摘要： A method of forming a relief image in a structure comprising a substrate and a transfer layer formed thereon comprises covering the transfer layer with a polymerizable fluid composition, and then contacting the polymerizable fluid composition with a mold having a relief structure formed therein such that the polymerizable fluid composition fills the relief structure in the mold. The polymerizable fluid composition is subjected to conditions to polymerize polymerizable fluid composition and form a solidified polymeric material therefrom on the transfer layer. The mold is then separated from the solid polymeric material such that a replica of the relief structure in the mold is formed in the solidified polymeric material; and the transfer layer and the solidified polymeric material are subjected to an environment to selectively etch the transfer layer relative to the solidified polymeric material such that a relief image is formed in the transfer layer.

    摘要翻译： 在包括基板和形成在其上的转印层的结构中形成浮雕图像的方法包括用可聚合流体组合物覆盖转印层，然后使可聚合流体组合物与其中形成有浮雕结构的模具接触，使得可聚合的 流体组合物填充模具中的浮雕结构。 可聚合流体组合物经受聚合可聚合流体组合物并在转移层上形成固化的聚合物材料的条件。 然后将模具与固体聚合物材料分离，使得在固化的聚合物材料中形成模具中的浮雕结构的复制品; 并且转印层和固化的聚合物材料经受环境以相对于固化的聚合物材料选择性地蚀刻转印层，使得在转印层中形成浮雕图像。

    Line ends forming
    77.
    发明授权
    Line ends forming 有权
    线端成型

    公开(公告)号：US07993815B2

    公开(公告)日：2011-08-09

    申请号：US11853353

    申请日：2007-09-11

    申请人： Matthew E. Colburn ,  Allen H. Gabor ,  Scott D. Halle ,  Donald J. Samuels

    发明人： Matthew E. Colburn ,  Allen H. Gabor ,  Scott D. Halle ,  Donald J. Samuels

    IPC分类号： H01L21/8229

    CPC分类号： G11C11/412 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11 ,  H01L27/115

    摘要： Methods of forming line ends and a related memory cell including the line ends are disclosed. In one embodiment, the method includes forming a first device element and a second device element separated from the first device element by a space; and forming a first line extending from the first device element, the first line including a bulbous line end over the space and distanced from the first device element, and a second line extending from the second device element, the second line including a bulbous line end over the space and distanced from the second device element.

    摘要翻译： 公开了形成线端的方法和包括线端的相关存储单元。 在一个实施例中，该方法包括通过空间形成与第一器件元件分离的第一器件元件和第二器件元件; 以及形成从所述第一装置元件延伸的第一线，所述第一线包括在所述空间上并与所述第一装置元件间隔开的球形线端，以及从所述第二装置元件延伸的第二线，所述第二线包括球根线端 并且与第二设备元件分开。

    Process for interfacial adhesion in laminate structures through patterned roughing of a surface
    78.
    发明授权
    Process for interfacial adhesion in laminate structures through patterned roughing of a surface 有权
    通过图案化粗糙化表面的层压结构中的界面粘合方法

    公开(公告)号：US07972965B2

    公开(公告)日：2011-07-05

    申请号：US11862706

    申请日：2007-09-27

    申请人： Edward C. Cooney, III ,  Vincent McGahay ,  Thomas M. Shaw ,  Anthony K. Stamper ,  Matthew E. Colburn

    发明人： Edward C. Cooney, III ,  Vincent McGahay ,  Thomas M. Shaw ,  Anthony K. Stamper ,  Matthew E. Colburn

    IPC分类号： H01L21/311

    CPC分类号： H01L21/76829 ,  H01L21/31144 ,  H01L21/76828 ,  H01L21/78

    摘要： The present invention relates to a process for improved interfacial adhesion of dielectrics using patterned roughing. Improved adhesion strength between layers and substrates can be achieved through increasing the roughness of the interface between the materials. Roughness may including any disturbance of an otherwise generally smooth surface, such as grooves, indents, holes, trenches, and/or the like. Roughing on the interface may be achieved by depositing a material on a surface of the substrate to act as a mask and then using an etching process to induce the roughness. The material, acting as a mask, allows etching to occur on a fine, or sub-miniature, scale below the Scale achieved with a conventional photo mask and lithography to achieve the required pattern roughing. Another material is then deposited on the roughened surface of the substrate, filling in the roughing and adhering to the substrate.

    摘要翻译： 本发明涉及使用图案化粗糙化改善电介质的界面粘附的方法。 可以通过增加材料之间的界面的粗糙度来实现层和基底之间的改善的粘附强度。 粗糙度可能包括任何干扰通常平滑的表面，如凹槽，凹痕，孔，沟槽等。 可以通过在衬底的表面上沉积材料作为掩模，然后使用蚀刻工艺来引起粗糙度来实现界面上的粗加工。 用作掩模的材料允许蚀刻在以常规光掩模和光刻实现的规模以下的精细或次微小尺度上发生，以实现所需的图案粗糙化。 然后将另一种材料沉积在基底的粗糙表面上，填充粗加工并粘附到基底上。