公开(公告)号：US20200244046A1

公开(公告)日：2020-07-30

申请号：US16844299

申请日：2020-04-09

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

IPC: H01S5/40 ,  H01S5/022 ,  H01S5/02 ,  H01L23/00 ,  H01S5/323 ,  H01L33/00

Abstract: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

公开(公告)号：US10720757B1

公开(公告)日：2020-07-21

申请号：US16217359

申请日：2018-12-12

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Paul Rudy ,  Po Shan Hsu ,  Alexander Sztein

IPC: H01S5/343 ,  H01S5/02 ,  H01S5/042 ,  H01S5/22

Abstract: A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material. The method includes bonding the interface region to a handle substrate and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member.

公开(公告)号：US10649086B2

公开(公告)日：2020-05-12

申请号：US16270448

申请日：2019-02-07

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Paul Rudy ,  Vlad Novotny

IPC: G01S17/10 ,  G01S17/89 ,  G01S7/481 ,  F21K9/64 ,  H01S5/00 ,  H01S5/024 ,  F21V29/70 ,  G01S7/487 ,  H01S5/022 ,  G01S17/93 ,  G01S17/02 ,  H01S5/343 ,  H01S5/40 ,  H01S5/028 ,  H01S5/22 ,  H01S5/02

Abstract: The present disclosure provides a mobile machine including a laser diode based lighting system having an integrated package holding at least a gallium and nitrogen containing laser diode and a wavelength conversion member. The gallium and nitrogen containing laser diode is configured to emit a first laser beam with a first peak wavelength. The wavelength conversion member is configured to receive at least partially the first laser beam with the first peak wavelength to excite an emission with a second peak wavelength that is longer than the first peak wavelength and to generate the white light mixed with the second peak wavelength and the first peak wavelength. The mobile machine further includes a light detection and ranging (LIDAR) system configured to generate a second laser beam and manipulate the second laser beam to sense a spatial map of target objects in a remote distance.

公开(公告)号：US20200064476A1

公开(公告)日：2020-02-27

申请号：US16672266

申请日：2019-11-01

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Paul Rudy ,  Vlad Novotny

IPC: G01S17/10 ,  G01S17/89 ,  G01S7/481 ,  F21K9/64 ,  H01S5/00 ,  H01S5/024 ,  F21V29/70 ,  G01S7/487 ,  H01S5/022 ,  G01S17/93 ,  G01S17/02 ,  H01S5/343 ,  H01S5/40

Abstract: The present disclosure provides a mobile machine including a laser diode based lighting system having an integrated package holding at least a gallium and nitrogen containing laser diode and a wavelength conversion member. The gallium and nitrogen containing laser diode is configured to emit a first laser beam with a first peak wavelength. The wavelength conversion member is configured to receive at least partially the first laser beam with the first peak wavelength to excite an emission with a second peak wavelength that is longer than the first peak wavelength and to generate the white light mixed with the second peak wavelength and the first peak wavelength. The mobile machine further includes a light detection and ranging (LIDAR) system configured to generate a second laser beam and manipulate the second laser beam to sense a spatial map of target objects in a remote distance.

公开(公告)号：US20190334618A1

公开(公告)日：2019-10-31

申请号：US15954463

申请日：2018-04-16

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

IPC: H04B10/116 ,  H01S5/343 ,  H01S5/00 ,  G02B27/09 ,  H01S5/22 ,  H04B10/50 ,  H04B10/60 ,  H04B10/524 ,  H04B10/564 ,  H04B10/572 ,  H01L33/00

Abstract: A smart light source configured for visible light communication. The light source includes a controller comprising a modem configured to receive a data signal and generate a driving current and a modulation signal based on the data signal. Additionally, the light source includes a light emitter configured as a pump-light device to receive the driving current for producing a directional electromagnetic radiation with a first peak wavelength in the ultra-violet or blue wavelength regime modulated to carry the data signal using the modulation signal. Further, the light source includes a pathway configured to direct the directional electromagnetic radiation and a wavelength converter optically coupled to the pathway to receive the directional electromagnetic radiation and to output a white-color spectrum. Furthermore, the light source includes a beam shaper configured to direct the white-color spectrum for illuminating a target of interest and transmitting the data signal.

公开(公告)号：US10439365B1

公开(公告)日：2019-10-08

申请号：US16380163

申请日：2019-04-10

Applicant: Soraa Laser Diode, Inc.

Inventor： Po Shan Hsu ,  Melvin McLaurin ,  Thiago P. Melo ,  James W. Raring

IPC: H01S5/343 ,  H01S5/22 ,  H01S5/20 ,  H01S5/042 ,  H01S5/30

Abstract: In an example, the present invention provides a method for fabricating a light emitting device configured as a Group III-nitride based laser device. The method also includes forming a gallium containing epitaxial material overlying the surface region of a substrate member. The method includes forming a p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a predetermined process condition. The method includes maintaining the predetermined process condition such that an environment surrounding a growth of the p-type (Al,In,Ga)N waveguide material is substantially a molecular N2 rich gas environment. The method includes maintaining a temperature ranging from 725 C to 925 C during the formation of the p-type (Al,In,Ga)N waveguide material, although there may be variations. In an example, the predetermined process condition is substantially free from molecular H2 gas.

公开(公告)号：US10002928B1

公开(公告)日：2018-06-19

申请号：US15480239

申请日：2017-04-05

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01L21/00 ,  H01L29/205 ,  H01L33/00 ,  H01L33/06 ,  H01L29/66 ,  H01L29/20 ,  H01L27/088 ,  H01L27/15 ,  H01L27/06 ,  H01L21/02 ,  H01L21/683 ,  H01L21/311 ,  H01S5/343 ,  H01S5/227 ,  H01S5/02

CPC classification number: H01L29/205 ,  H01L21/02458 ,  H01L21/311 ,  H01L21/6835 ,  H01L21/8252 ,  H01L21/8258 ,  H01L24/00 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/0676 ,  H01L27/085 ,  H01L27/088 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/15 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/432 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/66318 ,  H01L29/66462 ,  H01L29/66916 ,  H01L29/7786 ,  H01L29/8613 ,  H01L29/872 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32 ,  H01L2224/95 ,  H01S5/0203 ,  H01S5/0217 ,  H01S5/227 ,  H01S5/34333

Abstract: A method for manufacturing a display panel comprising light emitting device including micro LEDs includes providing multiple donor wafers having a surface region and forming an epitaxial material overlying the surface region. The epitaxial material includes an n-type region, an active region comprising at least one light emitting layer overlying the n-type region, and a p-type region overlying the active layer region. The multiple donor wafers are configured to emit different color emissions. The epitaxial material on the multiple donor wafers is patterned to form a plurality of dice, characterized by a first pitch between a pair of dice less than a design width. At least some of the dice are selectively transferred from the multiple donor wafers to a common carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs could comprise red-green-blue LEDs to form a RGB display panel.

公开(公告)号：US20180013265A1

公开(公告)日：2018-01-11

申请号：US15694641

申请日：2017-09-01

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01S5/343 ,  H01S5/22 ,  H01S5/20 ,  H01S5/02 ,  H01S5/32 ,  H01S5/40 ,  H01S5/022 ,  H01S5/00

CPC classification number: H01S5/34333 ,  H01L2224/18 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01L2924/3512 ,  H01S5/005 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/02248 ,  H01S5/02276 ,  H01S5/2009 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3214 ,  H01S5/4043 ,  H01S5/4093 ,  H01S2301/173 ,  H01S2301/176 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

公开(公告)号：US20170365975A1

公开(公告)日：2017-12-21

申请号：US15675532

申请日：2017-08-11

Applicant: Soraa Laser Diode, Inc.

Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

IPC: H01S5/02 ,  H01S5/32 ,  H01S5/022 ,  H01S5/343

CPC classification number: H01S5/0203 ,  H01S5/0202 ,  H01S5/0205 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/34346

Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

公开(公告)号：US09774170B2

公开(公告)日：2017-09-26

申请号：US15177710

申请日：2016-06-09

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01L21/00 ,  H01S5/343 ,  H01S5/22 ,  H01S5/02 ,  H01S5/32 ,  H01S5/00 ,  H01S5/022 ,  H01S5/20 ,  H01S5/40

CPC classification number: H01S5/34333 ,  H01L2224/18 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01L2924/3512 ,  H01S5/005 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/02248 ,  H01S5/02276 ,  H01S5/2009 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3214 ,  H01S5/4043 ,  H01S5/4093 ,  H01S2301/173 ,  H01S2301/176 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.