公开(公告)号：US09926643B2

公开(公告)日：2018-03-27

申请号：US13665339

申请日：2012-10-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Joo Jang ,  Shin Ae Jun ,  Jung Eun Lim ,  Hye Ran Choi

IPC: B05D7/00 ,  C30B7/14 ,  C30B29/40 ,  C30B29/48 ,  C30B29/60

CPC classification number: C30B7/14 ,  C30B29/40 ,  C30B29/48 ,  C30B29/605 ,  Y10T428/2989

Abstract: Disclosed herein is a multilayer nanocrystal structure comprising a nanocrystal alloy core comprising two or more nanocrystals and including an alloy interlayer formed at an interface between the two or more nanocrystals, and one or more layers of nanocrystal shells formed sequentially on the surface of the nanocrystal alloy core, wherein the nanocrystal shells each have different band gaps. The multilayer nanocrystal structure can be applied to various electronic devices owing to its advantages of high luminescence efficiency, superior optical stability, and superior chemical stability.

公开(公告)号：US09804323B2

公开(公告)日：2017-10-31

申请号：US14251881

申请日：2014-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Jong Bae ,  Jeong Hee Lee ,  Dong Earn Kim ,  Sang Eui Lee ,  Na Youn Won ,  Hyun A Kang ,  Shin Ae Jun

IPC: G02B6/00 ,  F21V8/00

CPC classification number: G02B6/0096 ,  Y10T29/49826

Abstract: A light source unit includes a light guide plate which includes a front surface and a rear surface which are opposite to each other and a side between and connecting the front surface and the rear surface, a light conversion device on the side of the light guide plate; and a light source which generates and supplies light to the light conversion device. The light conversion device includes, a sealed tube, a light conversion member within the sealed tube and a space other than an area in the tube which is occupied by the light conversion member, defined in the tube.

公开(公告)号：US09778510B2

公开(公告)日：2017-10-03

申请号：US14503764

申请日：2014-10-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Na Youn Won ,  Hyun A Kang ,  Eun Joo Jang ,  Shin Ae Jun ,  Oul Cho

IPC: H01B1/12 ,  G02F1/1335 ,  C09K11/00 ,  F21V8/00

CPC classification number: G02F1/133615 ,  C09K11/00 ,  G02B6/005 ,  G02F2001/133614 ,  Y10S977/774

Abstract: A semiconductor nanocrystal composition including a semiconductor nanocrystal, an organic additive, and at least one polymerizable substance selected from a polymerizable monomer, a polymerizable oligomer, and a combination thereof, wherein the composition has haze of greater than or equal to about 40% after polymerization.

公开(公告)号：US09475984B2

公开(公告)日：2016-10-25

申请号：US14180979

申请日：2014-02-14

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Eun Joo Jang ,  Mi Yang Kim ,  Hyung Kun Kim ,  Shin Ae Jun ,  Yong Wan Jin ,  Seong Jae Choi

IPC: H01L29/12 ,  C09K11/02 ,  B82Y10/00 ,  C09K11/56 ,  C09K11/88 ,  H01L33/06 ,  H01L33/50

CPC classification number: C09K11/025 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L29/127 ,  H01L33/06 ,  H01L33/502 ,  H01L33/507 ,  H01L33/56 ,  Y10S977/774 ,  Y10S977/892 ,  Y10S977/95

Abstract: Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.

公开(公告)号：US12215266B2

公开(公告)日：2025-02-04

申请号：US18354182

申请日：2023-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunki Kim ,  Shin Ae Jun ,  Eun Joo Jang ,  Yongwook Kim ,  Tae Gon Kim ,  Yuho Won ,  Taekhoon Kim ,  Hyo Sook Jang

IPC: C09K11/88 ,  C09K11/02 ,  C09K11/56 ,  C09K11/61 ,  C09K11/70 ,  C09K11/72 ,  H01L29/06 ,  H01L29/22 ,  H01L33/50 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00

Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.

公开(公告)号：US12195657B2

公开(公告)日：2025-01-14

申请号：US17687543

申请日：2022-03-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jooyeon Ahn ,  Taekhoon Kim ,  Deuk Kyu Moon ,  Jongmin Lee ,  Mi Hye Lim ,  Shin Ae Jun ,  Minho Kim ,  Yebin Jung

IPC: G02F1/13357 ,  C09D11/037 ,  C09D11/50 ,  C09K11/08 ,  C09K11/88 ,  G02F1/1335 ,  B82Y20/00 ,  B82Y40/00

Abstract: A color conversion panel that includes a color conversion layer including one or more color conversion regions, and optionally, a partition wall defining the regions of the color conversion layer, and a display device including the same. The color conversion region includes a first region corresponding to a first pixel, and the first region includes a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide. The Group III-V compound includes indium, phosphorus, and optionally, zinc or gallium, or zinc and gallium, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures do not include cadmium. The luminescent nanostructures further include fluorine, and in the luminescent nanostructures, a mole ratio of fluorine to indium is greater than or equal to about 0.05:1.

公开(公告)号：US12157848B2

公开(公告)日：2024-12-03

申请号：US18074570

申请日：2022-12-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeyeon Yang ,  Garam Park ,  Shin Ae Jun ,  Tae Gon Kim ,  Taekhoon Kim

IPC: C09K11/70 ,  C09K11/02 ,  C09K11/08 ,  C09K11/54 ,  C09K11/56 ,  C09K11/62 ,  G02F1/017 ,  G02F1/13357 ,  H10K59/12 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot including a multi-component core including a first semiconductor nanocrystal including indium (In), zinc (Zn), and phosphorus (P) and a second semiconductor nanocrystal disposed on the first semiconductor nanocrystal, the second semiconductor nanocrystal including gallium (Ga) and phosphorus (P) wherein the quantum dot is cadmium-free and emits green light, a mole ratio (P:In) of phosphorus relative to indium is greater than or equal to about 0.6:1 and less than or equal to about 1.0, and a mole ratio (P:(In+Ga)) of phosphorus relative to indium and gallium is greater than or equal to about 0.5:1 and less than or equal to about 0.8:1, a quantum dot-polymer composite pattern including the same, and a display device.

公开(公告)号：US12130508B2

公开(公告)日：2024-10-29

申请号：US18429592

申请日：2024-02-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Gon Kim ,  Garam Park ,  Jooyeon Ahn ,  Shang Hyeun Park ,  Shin Ae Jun

IPC: C09K11/62 ,  B82Y20/00 ,  C09K11/02 ,  C09K11/08 ,  C09K11/88 ,  G02F1/017 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  H10K50/115

CPC classification number: G02F1/01716 ,  B82Y20/00 ,  C09K11/02 ,  C09K11/025 ,  C09K11/0811 ,  C09K11/0883 ,  C09K11/62 ,  C09K11/883 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  H10K50/115 ,  G02F1/01791

Abstract: A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.

公开(公告)号：US12078827B2

公开(公告)日：2024-09-03

申请号：US17546268

申请日：2021-12-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shang Hyeun Park ,  Tae Gon Kim ,  Shin Ae Jun

IPC: G02B5/20 ,  C01G9/08 ,  C01G15/00 ,  C09K11/70 ,  C09K11/88 ,  G02F1/017 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: G02B5/207 ,  C01G9/08 ,  C01G15/006 ,  C09K11/70 ,  C09K11/883 ,  G02F1/01791 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2004/64 ,  C01P2004/80 ,  C01P2006/60 ,  G02B5/206 ,  G02B2207/101

Abstract: A color filter including a first layer including first quantum dots and a second layer including second quantum dots that are different from the first quantum dots, and disposed on the first layer, wherein a quantum yield of the first quantum dots is greater than a quantum yield of the second quantum dots, and wherein an absorption of blue light of the second quantum dots is greater than an absorption of the blue light of the first quantum dots.

公开(公告)号：US12071577B2

公开(公告)日：2024-08-27

申请号：US17331861

申请日：2021-05-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shang Hyeun Park ,  Tae Gon Kim ,  Shin Ae Jun

IPC: C09K11/88 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/02 ,  C09K11/08 ,  H10K59/38

CPC classification number: C09K11/883 ,  C09K11/02 ,  C09K11/0883 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot composite comprising: a matrix and a plurality of quantum dots dispersed in the matrix, wherein the plurality of the quantum dots comprises a semiconductor nanocrystal core including indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, and the semiconductor nanocrystal shell including zinc, selenium, and sulfur. The arithmetic size of the plurality of the quantum dots is greater than or equal to about 8 nm, wherein the quantum dot composite is configured to emit red light, and wherein when the quantum dot composite is irradiated with light of a wavelength of from about 450 nm to about 470 nm for a time period of less than or equal to about 500 hours, a luminance increase of the quantum dot composite is less than or equal to about 1.2% of an initial luminance of the quantum dot composite.