公开(公告)号：US06956225B1

公开(公告)日：2005-10-18

申请号：US10815586

申请日：2004-04-01

申请人： Victor M. Benveniste

发明人： Victor M. Benveniste

IPC分类号： H01J37/05 ,  H01J37/317

CPC分类号： H01J37/05 ,  H01J37/3171

摘要： Ion implantation systems are provided, comprising a dispersion system located between an ion source and a mass analyzer, that operates to selectively pass an extracted ion beam from the ion source toward the mass analyzer or to direct a dispersed ion beam toward the mass analyzer, where the dispersed ion beam has fewer ions of an undesired mass range than the extracted ion beam.

摘要翻译： 提供离子注入系统，其包括位于离子源和质量分析器之间的分散系统，其操作以选择性地将离子源从离子源向质量分析器传递，或者将分散的离子束引导到质量分析器，其中 分散的离子束具有比提取的离子束更少的不期望质量范围的离子。

公开(公告)号：US06885014B2

公开(公告)日：2005-04-26

申请号：US10210124

申请日：2002-07-31

申请人： Victor M. Benveniste

发明人： Victor M. Benveniste

IPC分类号： H01J27/16 ,  H01J27/00 ,  H01J27/06 ,  H01J37/04 ,  H01J37/05 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/3171 ,  H01J37/05 ,  H01J37/08 ,  H01J2237/0835 ,  H01J2237/31701

摘要： Ion implantation systems and beamlines therefor are disclosed, in which a ribbon beam of a relatively large aspect ratio is mass analyzed and collimated to provide a mass analyzed ribbon beam for use in implanting one or more workpieces. The beamline system comprises two similar magnets, where the first magnet mass analyzes the ribbon beam to provide an intermediate mass analyzed ion beam, and the second magnet collimates the intermediate beam to provide a uniform mass analyzed ribbon beam to an end station. The symmetrical system provides equidistant beam trajectories for ions across the elongated beam width so as to mitigate non-linearities in the beam transport through the system, such that the resultant mass analyzed beam is highly uniform.

摘要翻译： 公开了离子注入系统和其束线，其中质量分析和准直以提供质量分析的带状束，用于植入一个或多个工件。 束线系统包括两个类似的磁体，其中第一磁体质量分析带状束以提供中间质量分析离子束，并且第二磁体准直中间光束，以向终端站提供均匀质量分析的带状束。 对称系统为细长波束宽度上的离子提供等距离的波束轨迹，以便减轻通过系统的波束传输中的非线性，使得所得到的质量分析波束高度均匀。

公开(公告)号：US06677598B1

公开(公告)日：2004-01-13

申请号：US10425924

申请日：2003-04-29

申请人： Victor M. Benveniste

发明人： Victor M. Benveniste

IPC分类号： H01J37317

CPC分类号： H01J37/3171 ,  H01J2237/2446 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24542

摘要： The present invention facilitates semiconductor device fabrication by monitoring uniformity of beam current and angle of incidence at various locations throughout an ion beam (e.g., a wider portion of a ribbon beam). One or more uniformity detectors are employed within an ion implantation system (e.g., single wafer based system and/or a multiple wafer based system) and are comprised of a number of elements. The respective elements comprise an aperture that selectively obtains a beamlet from an incident ion beam and a pair of sensors that measure beam current as a function of the incoming angle of the ion beam. The angle of incidence at for particular elements can be determined at least partially from the measured beam current by the pairs of sensors. As a result, generation of an ion beam can be adjusted to improve uniformity as indicated and ion implantation can be performed with an improved uniformity and under tighter process controls.

摘要翻译： 本发明通过监测横跨整个离子束（例如，带束的更宽部分）的各个位置处的束电流和入射角的均匀性来促进半导体器件制造。 在离子注入系统（例如，基于单晶片的系统和/或基于多晶圆的系统）内采用一个或多个均匀性检测器，并且由许多元件组成。 相应的元件包括从入射离子束选择性地获得子束的孔径和一对测量作为离子束的入射角的函数的束流的传感器。 对于特定元件的入射角度可以至少部分地由测量的束电流由传感器对确定。 结果，可以调节离子束的产生以提高所指示的均匀性，并且可以以改进的均匀性和更严格的过程控制来执行离子注入。

公开(公告)号：US06291828B1

公开(公告)日：2001-09-18

申请号：US09469068

申请日：1999-12-21

申请人： Kourosh Saadatmand ,  David R. Swenson ,  William F. DiVergilio ,  Stephen M. Quinn ,  Zhimin Wan ,  Victor M. Benveniste

发明人： Kourosh Saadatmand ,  David R. Swenson ,  William F. DiVergilio ,  Stephen M. Quinn ,  Zhimin Wan ,  Victor M. Benveniste

IPC分类号： G21K510

CPC分类号： H01J37/3171 ,  H01J37/12 ,  H01J2237/038 ,  H01J2237/04737 ,  H01J2237/04924

摘要： An electrostatic quadrupole lens assembly (60) is provided for an ion implanter (10) having an axis (86) along which an ion beam passes, comprising: (i) four electrodes (84a-84d) oriented radially outward from the axis (86), approximately 90° apart from each other, such that a first pair of electrodes (84a and 84c) oppose each other approximately 180° apart, and a second pair of electrodes (84b and 84d) also oppose each other approximately 180° apart; (ii) a housing (62) having a mounting surface (64) for mounting the assembly (60) to the implanter, the housing at least partially enclosing the four electrodes (84a-84d); (iii) a first electrical lead (104) for providing electrical power to the first pair of electrodes (84a and 84c); (iv) a second electrical lead (108) for providing electrical power to the second pair of electrodes (84b and 84d); and (v) a plurality of electrically insulating members (92) formed of a glass-like material, comprising at least a first electrically insulating member for attaching the first pair of electrodes (84a and 84c) to the housing, and at least a second electrically insulating member for attaching the second pair of electrodes (84b and 84d) to the housing. The plurality of electrically insulating members (92) are preferably comprised of quartz (SiO2), or a heat resistant and chemical resistant glass material such as Pyrex®. The members (92) resist accumulation of material such as graphite sputtered off of the electrodes (84a-84d) by the ion beam, thus reducing the occurrence of high voltage breakdown and electrical current breakdown.

摘要翻译： 为具有离子束通过的轴线（86）的离子注入机（10）提供静电四极透镜组件（60），包括：（i）从轴线（86）径向向外取向的四个电极（84a-84d） ）彼此大约90°，使得第一对电极（84a和84c）彼此相对大约180°，并且第二对电极（84b和84d）也彼此相对大约180°; （ii）具有用于将所述组件（60）安装到所述注入器的安装表面（64）的壳体（62），所述壳体至少部分地包围所述四个电极（84a-84d）; （iii）用于向所述第一对电极（84a和84c）提供电力的第一电引线（104）; （iv）用于向所述第二对电极（84b和84d）提供电力的第二电引线（108）; 和（v）由玻璃状材料形成的多个电绝缘构件（92），至少包括用于将第一对电极（84a和84c）附接到壳体的第一电绝缘构件，以及至少第二 用于将第二对电极（84b和84d）附接到壳体的电绝缘构件。 多个电绝缘构件（92）优选地由石英（SiO 2）或耐热和耐化学腐蚀的玻璃材料（例如Pyrex）组成。 构件（92）通过离子束阻止溅射在电极（84a-84d）之外的诸如石墨的材料的堆积，从而减少高压击穿和电流击穿的发生。

公开(公告)号：US5814823A

公开(公告)日：1998-09-29

申请号：US900379

申请日：1997-07-12

申请人： Victor M. Benveniste

发明人： Victor M. Benveniste

IPC分类号： G01T1/29 ,  H01J37/244 ,  H01J37/317 ,  H01J47/00 ,  H01J39/00

CPC分类号： H01J37/244 ,  H01J2237/31703

摘要： An improved neutral particle detector (52) for an ion implantation system (10) is provided for detecting the neutral particle content of an ion beam (28) which is comprised primarily of neutral particles and positively charged ions. The neutral particle detector (52) comprises (i) a deflector plate (78) residing at a negative electrical potential; (ii) a first collecting electrode (82) residing at a positive electrical potential with respect to said deflector plate (78) for collecting secondary electrons emitted by the deflector plate (78) as a result of neutral particles in the ion beam impacting the deflector plate (78); and (iii) a second collecting electrode (84) residing at a positive electrical potential with respect to said deflector plate (78) for collecting secondary electrons emitted by the deflector plate (78) as a result of positively charged ions in the ion beam impacting the deflector plate (78). The deflector plate (78) and the collecting electrodes (82, 84) are separated by a distance through which the ion beam passes. The neutral particle detector (52) determines the neutral particle fraction of the ion beam independent of the composition or pressure of the residual background gas through which the ion beam propagates.

摘要翻译： 提供用于离子注入系统（10）的改进的中性粒子检测器（52），用于检测主要由中性粒子和带正电离子组成的离子束（28）的中性粒子含量。 中性粒子检测器（52）包括（i）位于负电位的偏转板（78）; （ii）相对于所述偏转板（78）位于正电位的第一收集电极（82），用于收集偏转板（78）发射的二次电子，这是由于离子束中的中性粒子撞击偏转器 板（78）; 和（iii）相对于所述偏转板（78）位于正电位的第二集电电极（84），用于收集由所述偏转板（78）发射的二次电子，这是由于离子束中的带正电荷的离子冲击 偏转板（78）。 偏转板（78）和收集电极（82,84）分离离子束通过的距离。 中性粒子检测器（52）确定离子束的中性粒子分数，与离子束传播的残留背景气体的组成或压力无关。

公开(公告)号：US5661308A

公开(公告)日：1997-08-26

申请号：US655448

申请日：1996-05-30

申请人： Victor M. Benveniste ,  Michasel Cristoforo

发明人： Victor M. Benveniste ,  Michasel Cristoforo

IPC分类号： H05H1/46 ,  H01J27/16 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265 ,  H01J27/00

CPC分类号： H01J27/024 ,  H01J27/16

摘要： An ion source for use in an ion implanter. The ion source includes a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber. A supply of ionizable material routes the material into the gas confinement chamber. An antenna that is supported by the base has a metallic radio frequency conducting segment mounted directly within the gas confinement chamber to deliver ionizing energy into the gas ionization zone.

摘要翻译： 用于离子注入机的离子源。 离子源包括气体限制室，其具有结合气体电离区的导电室壁。 气体限制室包括允许离子离开室的出口。 基座相对于从离开气体限制室的离子形成离子束的结构定位气体限制室。 可电离材料的供应将材料引导进入气体限制室。 由基座支撑的天线具有直接安装在气体限制室内的金属射频传导段，以将电离能传递到气体电离区。

公开(公告)号：US5554857A

公开(公告)日：1996-09-10

申请号：US545135

申请日：1995-10-19

申请人： Victor M. Benveniste

发明人： Victor M. Benveniste

IPC分类号： C23C14/48 ,  H01J37/05 ,  H01J37/317 ,  H01L21/265 ,  H01J49/30

CPC分类号： H01J37/3171 ,  H01J37/05 ,  H01J2237/14

摘要： A low energy ion implanter having an ion source for emitting ions and an implantation chamber spaced from the ion source by an ion beam path through which ions move from the source to the implantation chamber. A mass analyzing magnet positioned along the beam path between the source and the implantation chamber deflects ions through controlled arcuate paths to filter ions from the beam while allowing certain other ions to enter the ion implantation chamber. The magnet includes multiple magnet pole pieces constructed from a ferromagnetic material and having inwardly facing pole surfaces that bound at least a portion of a ion deflection region. One or more current carrying coils set up dipole magnetic fields in the deflection region near the pole pieces. Additional coils help set up a quadrapole field in deflection region. A controller electrically coupled to the one or more coils of said magnet for controls current through the one or more current carrying coils to create the magnetic field in the deflection region near the pole pieces.

摘要翻译： 具有用于发射离子的离子源和离子源与离子源间隔离离子束路径的低能离子注入机，离子束通过该离子束从离子源移动到注入室。 沿着源和注入室之间的光束路径定位的质量分析磁体通过受控的弧形路径偏转离子以从离子束过滤离子，同时允许某些其它离子进入离子注入室。 磁体包括由铁磁材料构成的多个磁极片，并且具有结合至少一部分离子偏转区域的向内的磁极表面。 一个或多个载流线圈在极片附近的偏转区域中建立偶极子磁场。 额外的线圈有助于在偏转区域中建立一个四极场。 电耦合到所述磁体的一个或多个线圈的控制器，用于控制通过所述一个或多个载流线圈的电流，以在极片附近的偏转区域中产生磁场。

公开(公告)号：US5198676A

公开(公告)日：1993-03-30

申请号：US767027

申请日：1991-09-27

申请人： Victor M. Benveniste ,  Peter L. Kellerman ,  John J. Schussler

发明人： Victor M. Benveniste ,  Peter L. Kellerman ,  John J. Schussler

IPC分类号： G01T1/29 ,  C23C14/48 ,  H01J37/04 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/3171 ,  H01J2237/24465 ,  H01J2237/31703

摘要： An ion beam intensity and emittance measuring system. A substrate supports conductive zones or regions that are impacted by an ion beam. Periodically the conductive regions are discharged through an integrator circuit which produces an output corresponding to the charge buildup on the conductive region. By determining the charge for multiple such regions impacted by an ion beam, a two-dimensional mapping of ion beam intensity vs. position is obtained on essentially a real-time basis. An emittance mask is also placed over the substrate and a measure of the emittance or spread of the ion beam is obtained.

公开(公告)号：US4724325A

公开(公告)日：1988-02-09

申请号：US855191

申请日：1986-04-23

申请人： Allen E. Armstrong ,  Victor M. Benveniste ,  David Edwards, Jr.

发明人： Allen E. Armstrong ,  Victor M. Benveniste ,  David Edwards, Jr.

IPC分类号： H01L21/265 ,  H01J37/20 ,  H01J37/317 ,  H01L21/00

CPC分类号： H01L21/67103 ,  H01J37/20

摘要： An ion beam treatment system for treating silicon wafers placed in the ion beam path. A rotatably mounted wafer pedestal has a plurality of wafer supporting substrates spaced about the pedestal. The substrates are constructed from an elastomer that is chosen for its ability to transfer heat generated by ion collision with the wafers away from the wafers. Each wafer substrate defines a series of elongated depressions across its surface. Certain of these depressions are connected to a pressure source at a wafer loading/unloading station to help acquire the wafers during loading and to facilitate removal of the wafers during unloading. Other depressions vent the interface between the wafers and the substrate to atmosphere to avoid undue pressure build-up on the wafers as they lift off the substrate.

摘要翻译： 一种用于处理放置在离子束路径中的硅晶片的离子束处理系统。 可旋转地安装的晶片基座具有围绕基座间隔开的多个晶片支撑基板。 衬底由弹性体构成，该弹性体被选择用于将离子碰撞产生的热量与晶片远离晶片转移的能力。 每个晶片衬底在其表面上限定一系列细长的凹陷。 这些凹陷中的某些连接到晶片装载/卸载站处的压力源，以在加载期间帮助获取晶片，并且有助于在卸载期间移除晶片。 其他凹陷将晶片和基板之间的界面排出到大气中，以避免在晶片剥离基板时晶片上过度的压力积聚。

公开(公告)号：US4419584A

公开(公告)日：1983-12-06

申请号：US283507

申请日：1981-07-14

申请人： Victor M. Benveniste

发明人： Victor M. Benveniste

IPC分类号： H01J37/20 ,  H01J37/317 ,  H01L21/00 ,  H01L21/265

CPC分类号： H01L21/67115 ,  H01J37/3171

摘要： Apparatus for treating workpieces by directing a beam at the workpieces, with resultant heating of the workpieces, the apparatus including a moving support element for carrying the workpieces past a source of the beam in both a scanning direction and in a control direction generally orthogonal to the scanning direction, an infrared detector mounted to move in the control direction but not in the scanning direction to receive black body radiation from the workpieces as they pass under the detector, and means to correct black body radiation measurements of said workpieces for noise resulting from dark current variation, whereby an indication of the temperature of the individual workpieces can be obtained as workpiece movements and beam treatment occur.

摘要翻译： 一种用于通过在工件处引导光束来对工件进行处理的装置，其中工件的加热，该装置包括一个移动的支撑元件，用于将工件沿扫描方向和控制方向大致垂直于 扫描方向，红外线检测器安装成沿着控制方向而不是在扫描方向上移动，以在工件通过检测器时从工件接收黑体辐射;以及用于校正所述工件的黑体辐射测量值以产生黑暗的噪声的装置 电流变化，从而当工件移动和光束处理发生时，可以获得各个工件的温度指示。