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    On-Chip Disease Diagnostic Platform for Dual-Gate Ion Sensitive Field Effect Transistor
    73.
    发明申请
    On-Chip Disease Diagnostic Platform for Dual-Gate Ion Sensitive Field Effect Transistor 审中-公开
    双栅离子敏感场效应晶体管片上疾病诊断平台

    公开(公告)号：US20170067890A1

    公开(公告)日：2017-03-09

    申请号：US15356503

    申请日：2016-11-18

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Ching-Hui Lin ,  Chun-Ren Cheng ,  Yi-Hsien Chang ,  Shih-Fen Huang

    IPC: G01N33/543 ,  G01N27/414

    CPC classification number: G01N33/54373 ,  G01N27/4145 ,  G01N27/4148 ,  H01L51/0093 ,  H01L51/0512

    Abstract: Dual-gate ion-sensitive field effect transistor (ISFET) and methods implementing the dual-gate ISFETs for disease diagnostics are disclosed herein. An exemplary method includes providing a biological sample to a dual-gate ISFET. The dual-gate ISFET includes a fluidic gate structure and a gate structure, where the fluidic gate structure and the gate structure are disposed over opposite surfaces of a device substrate. The method further includes generating enzymatic reactions from enzyme-modified detection mechanisms. The enzyme-modified detection mechanisms release ions into an electrolyte solution of the fluidic gate structure. The method further includes biasing the fluidic gate structure and the gate structure to generate an electrical signal as a sensing layer of the fluidic gate structure reacts with the ions. The electrical signal indicates an ion concentration in the electrolyte solution that correlates with a presence or a quantity of target analytes in the biological sample.

    Abstract translation: 本文公开了双栅离子敏感场效应晶体管（ISFET）和实现用于疾病诊断的双栅极ISFET的方法。 一种示例性方法包括向双栅极ISFET提供生物样品。 双栅极ISFET包括流体栅极结构和栅极结构，其中流体栅极结构和栅极结构设置在器件衬底的相对表面上。 该方法还包括从酶修饰的检测机制产生酶反应。 酶修饰的检测机制将离子释放到流体门结构的电解质溶液中。 该方法还包括偏压流体栅极结构和栅极结构以在流体栅极结构的感测层与离子反应时产生电信号。 电信号表示与生物样品中目标分析物的存在或数量相关的电解质溶液中的离子浓度。

    Direct Sensing BioFETs and Methods of Manufacture
    76.
    发明申请
    Direct Sensing BioFETs and Methods of Manufacture 审中-公开
    直接感应生物体及其制造方法

    公开(公告)号：US20150330942A1

    公开(公告)日：2015-11-19

    申请号：US14810255

    申请日：2015-07-27

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Yi-Hsien Chang ,  Chun-Ren Cheng ,  Shih-Wei Lin ,  Yi-Shao Liu

    IPC: G01N27/414 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/285 ,  H01L21/8234 ,  H01L21/311

    CPC classification number: G01N27/4145 ,  H01L21/28525 ,  H01L21/31111 ,  H01L21/32135 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/823437 ,  H01L21/823475 ,  H01L27/283

    Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of micro wells having a sensing gate bottom and a number of stacked well portions. A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The micro wells are formed by multiple etching operations through different materials, including a sacrificial plug, to expose the sensing gate without plasma induced damage.

    Abstract translation: 本公开提供了生物场效应晶体管（BioFET）和制造BioFET器件的方法。 该方法包括使用与互补金属氧化物半导体（CMOS）工艺兼容或典型的一个或多个工艺步骤形成BioFET。 BioFET器件包括具有感测栅极底部和多个堆叠阱部分的多个微孔。 井部的底面积与直接在下方的井口部的顶面积不同。 微孔通过不同材料的多次蚀刻操作形成，包括牺牲塞，以暴露感测门而不产生等离子体的损伤。

    Backside CMOS compatible BioFET with no plasma induced damage
    77.
    发明授权
    Backside CMOS compatible BioFET with no plasma induced damage 有权
    背面CMOS兼容的BioFET，无等离子体损伤

    公开(公告)号：US09080969B2

    公开(公告)日：2015-07-14

    申请号：US14281100

    申请日：2014-05-19

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Yi-Shao Liu ,  Chun-Ren Cheng ,  Ching-Ray Chen ,  Yi-Hsien Chang ,  Fei-Lung Lai ,  Chun-Wen Cheng

    IPC: G01N27/403 ,  G01N27/414 ,  H01L29/66

    CPC classification number: G01N27/4145 ,  G01N27/4148 ,  H01L21/31105 ,  H01L27/088 ,  H01L29/66477

    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.

    Abstract translation: 本公开提供了生物场效应晶体管（BioFET）器件和制造BioFET和BioFET器件的方法。 该方法包括使用与互补金属氧化物半导体（CMOS）工艺兼容或典型的一个或多个工艺步骤形成BioFET。 BioFET器件包括设置在衬底的第一表面上的栅极结构和形成在衬底的第二表面上的界面层。 在形成界面层之前，从第二表面减薄衬底以暴露沟道区。

    Method for Forming Biochips and Biochips With Non-Organic Landings for Improved Thermal Budget
    78.
    发明申请
    Method for Forming Biochips and Biochips With Non-Organic Landings for Improved Thermal Budget 审中-公开
    用于形成具有非有机上岸的生物芯片和生物芯片以改进热预算的方法

    公开(公告)号：US20150011021A1

    公开(公告)日：2015-01-08

    申请号：US14497151

    申请日：2014-09-25

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chia-Hua Chu ,  Allen Timothy Chang ,  Ching-Ray Chen ,  Yi-Hsien Chang ,  Yi-Shao Liu ,  Chun-Ren Cheng ,  Chun-Wen Cheng

    IPC: G01N33/543 ,  H01L21/00

    CPC classification number: G01N33/54386 ,  H01L21/00 ,  H01L2224/18

    Abstract: The present disclosure provides biochips and methods of fabricating biochips. The method includes combining three portions: a transparent substrate, a first substrate with microfluidic channels therein, and a second substrate. Through-holes for inlet and outlet are formed in the transparent substrate or the second substrate. Various non-organic landings with support medium for bio-materials to attach are formed on the first substrate and the second substrate before they are combined. In other embodiments, the microfluidic channel is formed of an adhesion layer between a transparent substrate and a second substrate with landings on the substrates.

    Abstract translation: 本公开提供了生物芯片和制造生物芯片的方法。 该方法包括组合三个部分：透明衬底，其中具有微流体通道的第一衬底和第二衬底。 用于入口和出口的通孔形成在透明基板或第二基板中。 在组合之前，在第一基板和第二基板上形成具有用于附着生物材料的支撑介质的各种非有机着陆。 在其他实施例中，微流体通道由透明基板和第二基板之间的粘合层形成，在基板上具有着陆。

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