摘要:
A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extremely simple and inexpensive to implement, and scales from wire dimensions of several micrometers down to nanometer-scale dimensions. The device of the present invention can be used to produce crossbar switch arrays, logic devices, memory devices, and communication and signal routing devices. The present invention enables construction of molecular electronic devices on a length scale than can range from micrometers to nanometers via a straightforward and inexpensive chemical assembly procedure. The device is either partially or completely chemically assembled, and the key to the scaling is that the location of the devices on the substrate are defined once the devices have been assembled, not prior to assembly.
摘要:
A molecular-wire crossbar interconnect for signal routing and communications between a first level and a second level in a molecular-wire crossbar is provided. The molecular wire crossbar comprises a two-dimensional array of a plurality of nanometer-scale switches. Each switch is reconfigurable and self-assembling and comprises a pair of crossed wires which form a junction where one wire crosses another and at least one connector species connecting the pair of crossed wires in the junction. The connector species comprises a bi-stable molecule. Each level comprises at least one group of switches and each group of switches comprises at least one switch, with each group in the first level connected to all other groups in the second level in an all-to-all configuration to provide a scalable, defect-tolerant, fat-tree networking scheme. The primary advantage is ease of fabrication, because an active switch is formed any time two wires cross. This saves tremendously on circuit area (a factor of a few times ten), since no other wires or ancillary devices are needed to operate the switch or store the required configuration. This reduction of the area of a configuration bit and its switch to just the area of two crossing wires is a major advantage in constructing a defect-tolerant interconnect network.
摘要:
A quantum wire switch and a switching method for switching charge carriers between a first output and a second output utilizing quantum interference of the charge carriers. A quantum switch includes a quantum wire extending from an input to a first output, a second quantum wire extending from the input to a second output, and a third quantum wire extending between the first and second outputs, the three quantum wires together defining a ring. A controllable-length quantum wire electron stub tuner is connected to the ring. As charge carriers propagate from the input around the ring the stub tuner is used to control the quantum interference of the charge carriers resulting in local maxima and minima at various points around the ring. Setting the stub to a first length results in a local maximum at the first output and a local minimum at the second output, and the charge carriers can propagate to the first output and not the second output. Setting the stub to a second length reverses the locations of the local maxima and minima, and the charge carriers propagate to the second output but not the first output. The invention can also include a second controllable-length stub attached to the ring to increase switching efficiency. A quantum switch according to the invention can also act as a simple binary NOT logic gate or a simple binary AND logic gate.
摘要:
Shiftable memory employs ring registers to shift a contiguous subset of data words stored in the ring registers within the shiftable memory. A shiftable memory includes a memory having built-in word-level shifting capability. The memory includes a plurality of ring registers to store data words. A contiguous subset of data words is shiftable between sets of the ring registers of the plurality from a first location to a second location within the memory. The contiguous subset of data words has a size that is smaller than a total size of the memory. The memory shifts only data words stored inside the contiguous subset when the contiguous subset is shifted.
摘要:
A negative index material (or metamaterial) crossbar includes a first layer of approximately parallel nanowires and a second layer of approximately parallel nanowires that overlay the nanowires in the first layer. The nanowires in the first layer are approximately perpendicular in orientation to the nanowires in the second layer. Each nanowire of the first layer and each nanowire of the second layer has substantially regularly spaced fingers. The crossbar further includes resonant elements at nanowire intersections between the respective layers. Each resonant element includes two fingers of a nanowire in the first layer and two fingers of a nanowire in the second layer.
摘要:
A chemical-analysis device integrated with a metallic-nanofinger device for chemical sensing. The chemical-analysis device includes a metallic-nanofinger device, and a platform. The metallic-nanofinger device includes a substrate, and a plurality of nanofingers coupled with the substrate. A nanofinger of the plurality includes a flexible column, and a metallic cap coupled to an apex of the flexible column. At least the nanofinger and a second nanofinger of the plurality of nanofingers are to self-arrange into a close-packed configuration with at least one analyte molecule. A morphology of the metallic cap is to generate a shifted plasmonic-resonance peak associated with amplified luminescence from the analyte molecule. A method for using, and a chemical-analysis apparatus including the chemical-analysis device are also provided.
摘要:
A metallic-nanofinger device for chemical sensing. The device includes a substrate, and a plurality of nanofingers. A nanofinger includes a flexible column, and a metallic cap coupled to an apex of the flexible column. At least the nanofinger and a second nanofinger are to self-arrange into a close-packed configuration with at least one analyte molecule disposed between at least the metallic cap and a second metallic cap of respective nanofinger and second nanofinger. A morphology of the metallic cap is to generate a shifted plasmonic-resonance peak associated with amplified luminescence from the analyte molecule. A coating encapsulating the metallic cap to respond upon exposure to a liquid, and a chemical-sensing chip including the metallic-nanofinger device are also provided.
摘要:
In one example, a customizable nonlinear electrical device includes a first conductive layer, a second conductive layer, and a thin film metal-oxide layer sandwiched between the first conductive layer and the second conductive layer to form a first rectifying interface between the metal-oxide layer and the first conductive layer and a second rectifying interface between the metal-oxide layer and the second conductive layer. The metal-oxide layer includes an electrically conductive mixture of co-existing metal and metal oxides. A method forming a nonlinear electrical device is also provided.
摘要:
A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed.
摘要:
A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.