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    Systems and Methods for Determination of Endpoint of Chamber Cleaning Processes
    78.
    发明申请
    Systems and Methods for Determination of Endpoint of Chamber Cleaning Processes 审中-公开
    用于确定腔室清洁过程端点的系统和方法

    公开(公告)号：US20080251104A1

    公开(公告)日：2008-10-16

    申请号：US12088825

    申请日：2006-10-03

    申请人： Ing-Shin Chen ,  Jeffrey W. Neuner ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Bryan C. Hendrix ,  Philip S.H. Chen

    发明人： Ing-Shin Chen ,  Jeffrey W. Neuner ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Bryan C. Hendrix ,  Philip S.H. Chen

    IPC分类号： B08B13/00

    CPC分类号： H01L21/67253 ,  C23C16/4405 ,  C23C16/52 ,  H01J37/32862 ,  H01J37/32935 ,  H01J37/32963 ,  H01L21/67069

    摘要： Apparatus and method for determination of the endpoint of a cleaning process in which cleaning fluid is contacted with a structure to effect cleaning thereof. The cleaning process includes contacting a cleaning fluid with a structure to be cleaned and producing a cleaning effluent having a sensible heat thermal energy characteristic corresponding to extent of cleaning of the structure, disposing an object in the cleaning effluent that interacts with the cleaning effluent to produce a response indicative of the sensible heat thermal energy characteristic of the cleaning effluent, and monitoring such response to determine when the cleaning is completed. An endpointing algorithm and endpoint monitoring are also described, as well as endpoint monitor sensor elements that are useful to determine endpoint conditions in an efficient and reproduceable manner.

    摘要翻译： 用于确定清洁过程的终点的装置和方法，其中清洁流体与结构接触以进行清洁。 清洁过程包括将清洁流体与要清洁的结构接触并产生具有对应于结构的清洁程度的显热热能特征的清洁流出物，将清洁物品放置在与清洁流出物相互作用的清洁流出物中以产生 指示清洁流出物的显热热能特征的响应，以及监测这种响应以确定何时完成清洁。 还描述了端点算法和端点监视，以及端点监视器传感器元件，其有效地以有效和可再现的方式确定端点条件。

    Barrier structures for integration of high K oxides with Cu and Al electrodes
    79.
    发明授权
    Barrier structures for integration of high K oxides with Cu and Al electrodes 失效
    用于将高K氧化物与Cu和Al电极结合的阻挡结构

    公开(公告)号：US06900498B2

    公开(公告)日：2005-05-31

    申请号：US09681609

    申请日：2001-05-08

    申请人： Gregory T. Stauf ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Ing-Shin Chen

    发明人： Gregory T. Stauf ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Ing-Shin Chen

    IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L27/108

    CPC分类号： H01L28/75 ,  H01L21/28291 ,  H01L28/55

    摘要： An integrated circuit barrier structure disposed between high dielectric constant metal oxide and Cu or Al electrodes, for preventing diffusion of species such as oxygen, bismuth, or lead from the high dielectric constant metal oxide into the Cu or Al electrodes. Such barrier structure also protects the Cu or Al electrodes against oxidization during deposition of the high dielectric constant metal oxide. The barrier structure can be formed as (1) a single layer of Pt, Ir, IrO2, Ir2O3, Ru, RuO2, CuO, Cu2O, Al2O3, or a binary or ternary metal nitride, e.g., TaN, NbN, HfN, ZrN, WN, W2N, TiN, TiSiN, TiAlN, TaSiN, or NbAlN, or (2) double or triple layers of such materials, e.g., Pt/TiAlN, Pt/IrO2, Pt/Ir, Ir/TiAlN, Ir/IrO2, IrO2/TiAlN, IrO2/Ir, or IrO2/Ir2O3/Ir. Such barrier structures enable Cu or Al electrodes to be used in combination with high dielectric constant metal oxides in microelectronic structures such as ferroelectric stack and trench capacitors, non-volatile ferroelectric memory cells, and dynamic random access memory (DRAM) cells.

    摘要翻译： 设置在高介电常数金属氧化物和Cu或Al电极之间的集成电路阻挡结构，用于防止诸如氧，铋或铅的物质从高介电常数金属氧化物扩散到Cu或Al电极中。 这种阻挡结构还保护Cu或Al电极在沉积高介电常数金属氧化物期间免受氧化。 阻挡结构可以形成为（1）单层Pt，Ir，IrO 2，Ir 2 O 3，Ru，RuO CuO，Cu 2 O，Al 2 O 3 3，或二元或三元金属氮化物，例如 ，TaN，NbN，HfN，ZrN，WN，W 2 N，TiN，TiSiN，TiAlN，TaSiN或NbAlN，或（2）这种材料的双层或三层，例如Pt / TiAlN ，Pt / IrO 2，Pt / Ir，Ir / TiAlN，Ir / IrO 2，IrO 2 / TiAlN，IrO 2 Ir或IrO 2 / Ir 2 O 3 / Ir。 这种阻挡结构使得Cu或Al电极能够与诸如铁电堆和沟槽电容器，非易失性铁电存储器单元和动态随机存取存储器（DRAM）单元的微电子结构中的高介电常数金属氧化物组合使用。

    Stress control of thin films by mechanical deformation of wafer substrate
    80.
    发明授权
    Stress control of thin films by mechanical deformation of wafer substrate 失效
    通过晶片衬底的机械变形对薄膜进行应力控制

    公开(公告)号：US06514835B1

    公开(公告)日：2003-02-04

    申请号：US09676283

    申请日：2000-09-28

    申请人： Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau

    发明人： Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau

    IPC分类号： H01L2120

    CPC分类号： H01L41/257 ,  C23C14/50 ,  C23C14/541 ,  H01L21/302 ,  H01L21/31691 ,  H01L41/314

    摘要： A method of improving the physical and/or electrical and/or magnetic properties of a thin film material formed on a substrate, wherein the properties of the thin film material are stress-dependent, by selectively applying force to the substrate during the film formation and/or thereafter during the cooling of the film in the case of a film formed at elevated temperature, to impose through the substrate an applied force condition opposing or enhancing the retention of stress in the product film. The method of the invention has particular utility in the formation of ferroelectric thin films which are grown at temperature above the Curie temperature, and which may be placed in tension during the cooling of the film to provide ferroelectric domains with polarization in the plane of the film.

    摘要翻译： 一种改善形成在基底上的薄膜材料的物理和/或电学和/或磁性质的方法，其中薄膜材料的性质是依赖于应力的，通过在成膜期间选择性地对基底施加力，以及 /或之后在膜的冷却过程中，在高温下形成的膜的情况下，通过与衬底施加相反或增强产品膜中的应力保持的施加力条件。 本发明的方法在形成在高于居里温度的温度下生长的铁电薄膜具有特别的用途，并且可以在薄膜冷却期间放置张力以在薄膜的平面中提供具有极化的铁电畴 。