公开(公告)号：US20070284652A1

公开(公告)日：2007-12-13

申请号：US11783141

申请日：2007-04-06

申请人： Takuya Kobayashi ,  Katsuyuki Sekine ,  Yoshio Ozawa ,  Masayuki Tanaka

发明人： Takuya Kobayashi ,  Katsuyuki Sekine ,  Yoshio Ozawa ,  Masayuki Tanaka

IPC分类号： H01L29/792

CPC分类号： H01L29/513 ,  H01L29/40117 ,  H01L29/517

摘要： A semiconductor memory device capable of suppressing detrapping of stored charges from a charge storage dielectric is disclosed. According to one aspect of the present invention, there is provided a semiconductor memory device comprising a semiconductor substrate, a blocking dielectric disposed on the semiconductor substrate a charge storage dielectric disposed on the blocking dielectric to store holes, a hole conductive dielectric disposed on the charge storage dielectric, and a gate electrode disposed on the hole conductive dielectric.

摘要翻译： 公开了能够抑制存储电荷从电荷存储电介质中去除的半导体存储器件。 根据本发明的一个方面，提供了一种半导体存储器件，其包括半导体衬底，设置在半导体衬底上的阻挡电介质，设置在阻挡电介质上以存储孔的电荷存储电介质，设置在电荷上的导电电介质 存储电介质和设置在导电电介质上的栅电极。

公开(公告)号：US20070215958A1

公开(公告)日：2007-09-20

申请号：US11798593

申请日：2007-05-15

申请人： Masayuki Tanaka ,  Yoshio Ozawa ,  Shigehiko Saida ,  Akira Goda ,  Mitsuhiro Noguchi ,  Yuichiro Mitani ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Yoshio Ozawa ,  Shigehiko Saida ,  Akira Goda ,  Mitsuhiro Noguchi ,  Yuichiro Mitani ,  Yoshitaka Tsunashima

IPC分类号： H01L29/94

CPC分类号： H01L21/022 ,  H01L21/0217 ,  H01L21/28176 ,  H01L21/28202 ,  H01L21/28247 ,  H01L21/28518 ,  H01L21/3185 ,  H01L21/76838 ,  H01L21/76897 ,  H01L29/40117 ,  H01L29/513 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/792

摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the gate electrode and including a lower silicon nitride film containing nitrogen, silicon and hydrogen and an upper silicon nitride film formed on the lower silicon nitride film and containing nitrogen, silicon and hydrogen, and wherein a composition ratio N/Si of nitrogen (N) to silicon (Si) in the lower silicon nitride film is higher than that in the upper silicon nitride film.

摘要翻译： 公开了一种半导体器件，包括半导体衬底，栅电极，形成在半导体衬底和栅电极之间的第一绝缘膜，以及沿着栅电极的顶表面或侧表面形成的第二绝缘膜， 包含氮，硅和氢的氮化硅膜和形成在下部氮化硅膜上并含有氮，硅和氢的上部氮化硅膜，并且其中氮（N）与硅（Si）的组成比N / Si在 下氮化硅膜比上述氮化硅膜高。

公开(公告)号：US20070134227A1

公开(公告)日：2007-06-14

申请号：US10551550

申请日：2004-03-31

申请人： Masayuki Tanaka ,  Mamoru Kyogashima

发明人： Masayuki Tanaka ,  Mamoru Kyogashima

IPC分类号： A61K38/47 ,  C07H21/04 ,  C08B37/00 ,  C12N9/24 ,  C12P19/04 ,  C12P21/06

CPC分类号： C12N9/2408 ,  A61K38/1709

摘要： A catalyst which is capable of specifically cleaving one sugar chain or two or more sugar chains selected from the group consisting of hyaluronic acid, chondroitin sulfate A, chondroitin sulfate C and chondroitin sulfate D; a cleavage agent specific for the sugar chains; a medicament which is used for specifically cleaving the sugar chains in a living body tissue; a method for specifically cleaving the sugar chains; a method for specifically producing the sugar chain having a decreased molecular weight; and production methods for the catalyst, the cleavage agent and the medicament.

摘要翻译： 一种能够特异性切割选自透明质酸，硫酸软骨素A，硫酸软骨素C和硫酸软骨素D中的一种糖链或两种或更多种糖链的催化剂; 针对糖链的切割剂; 用于特异性切割活体组织中的糖链的药物; 专门切割糖链的方法; 专门生产分子量降低的糖链的方法; 以及催化剂，裂解剂和药物的制备方法。

公开(公告)号：US07194823B2

公开(公告)日：2007-03-27

申请号：US10999945

申请日：2004-12-01

申请人： Shigeharu Nakamoto ,  Hidetaka Yabuuchi ,  Hajime Nojima ,  Masayuki Tanaka

发明人： Shigeharu Nakamoto ,  Hidetaka Yabuuchi ,  Hajime Nojima ,  Masayuki Tanaka

IPC分类号： F26B21/00 ,  F26B21/06

CPC分类号： D06F58/206 ,  D06F2058/2874

摘要： A clothes drying apparatus includes a heat pump mechanism, an air path for guiding drying air into a drying drum accommodating therein clothes, a blower for supplying drying air to the air path, and a controller for controlling a driving of a compressor, wherein the controller operates the blower and the compressor during a drying operation; stops the compressor in case the drying operation is suspended; and operates, in case the drying operation is resumed, the compressor after a certain time period has elapsed since the compressor had stopped. In case employing the heat pump mechanism having the compressor as a heat source, it is possible to reduce a load on the compressor and allow temperature of warm air to rapidly return by using the heat pump mechanism.

摘要翻译： 衣物干燥装置包括热泵机构，用于将干燥空气引导到容纳衣物的干燥滚筒中的空气通道，用于向空气路径供应干燥空气的鼓风机和用于控制压缩机的驱动的控制器，其中控制器 在干燥操作期间操作鼓风机和压缩机; 如果干燥操作暂停，则停止压缩机; 并且在恢复干燥操作的情况下操作，压缩机在从压缩机停止之后经过一段时间后经过。 在使用具有压缩机的热泵机构作为热源的情况下，可以减少压缩机的负荷，并且通过使用热泵机构使暖空气的温度快速返回。

公开(公告)号：US07148158B2

公开(公告)日：2006-12-12

申请号：US10916500

申请日：2004-08-12

申请人： Yoshio Ozawa ,  Masayuki Tanaka ,  Kiyotaka Miyano ,  Shigehiko Saida

发明人： Yoshio Ozawa ,  Masayuki Tanaka ,  Kiyotaka Miyano ,  Shigehiko Saida

IPC分类号： H01L21/338 ,  H01L21/8238 ,  H01L21/336 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L29/4983 ,  H01L29/41783 ,  H01L29/6656

摘要： A semiconductor device includes a semiconductor device comprising a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulation film formed on the semiconductor substrate, a gate electrode formed on the gate insulation film between the source/drain regions, and a gate sidewall spacer formed on side surfaces of the gate electrode, wherein the gate sidewall spacer is composed of silicon oxide containing 0.1–30 atomic % of chlorine.

公开(公告)号：US07060555B2

公开(公告)日：2006-06-13

申请号：US10895144

申请日：2004-07-21

申请人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01L21/336

CPC分类号： H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/10873 ,  H01L2924/0002 ,  H01L2924/00

摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

公开(公告)号：US07041584B2

公开(公告)日：2006-05-09

申请号：US10867765

申请日：2004-06-16

申请人： Masayuki Tanaka ,  Kazuaki Nakajima ,  Yoshitaka Tsunashima ,  Takayuki Ito ,  Kyoichi Suguro

发明人： Masayuki Tanaka ,  Kazuaki Nakajima ,  Yoshitaka Tsunashima ,  Takayuki Ito ,  Kyoichi Suguro

IPC分类号： H01L21/324 ,  H01L21/335

CPC分类号： H01L21/324 ,  H01L21/28518 ,  H01L21/32053 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76886 ,  H01L29/665

摘要： An aspect of the present invention provides a method of manufacturing a semiconductor device, including, forming an insulating film on a silicide layer formed at the surface of a silicon semiconductor substrate, etching the insulating film to form a contact hole in which the silicide layer is exposed, forming a metal nitride film on the bottom and side wall of the contact hole, carrying out a first heating process at 600° C. or lower on the substrate, carrying out, during the first heating process, a second heating process for 10 msec or shorter with light whose main wavelength is shorter than a light absorbing end of silicon, forming a contact conductor in the contact hole after the second heating process, and forming, on the insulating film, wiring that is electrically connected to the substrate through the contact conductor.

公开(公告)号：US20050212036A1

公开(公告)日：2005-09-29

申请号：US11088947

申请日：2005-03-25

申请人： Masayuki Tanaka ,  Yoshio Ozawa ,  Hirokazu Ishida ,  Katsuaki Natori ,  Seiji Inumiya

发明人： Masayuki Tanaka ,  Yoshio Ozawa ,  Hirokazu Ishida ,  Katsuaki Natori ,  Seiji Inumiya

IPC分类号： H01L21/8247 ,  G11C16/04 ,  H01L21/28 ,  H01L27/115 ,  H01L29/423 ,  H01L29/51 ,  H01L29/76 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L29/7881 ,  G11C16/0483 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/513

摘要： A semiconductor memory device includes a semiconductor substrate, an isolation insulation film filled in a plurality of trenches formed in the semiconductor substrate to define a plurality of element formation regions, a floating gate provided on each of the element formation regions through a first gate insulation film, a control gate provided on the floating gate through a second gate insulation film, and source/drain regions provided in the semiconductor substrate, wherein a mutual diffusion layer is provided at least at an interface between the second gate insulation film and the control gate.

摘要翻译： 半导体存储器件包括半导体衬底，隔离绝缘膜，填充在形成于半导体衬底中的多个沟槽中以限定多个元件形成区域;浮置栅极，通过第一栅极绝缘膜设置在每个元件形成区域上 ，通过第二栅极绝缘膜设置在浮置栅极上的控制栅极和设置在半导体衬底中的源极/漏极区域，其中至少在第二栅极绝缘膜和控制栅极之间的界面处设置相互扩散层。

公开(公告)号：US06903422B2

公开(公告)日：2005-06-07

申请号：US10609520

申请日：2003-07-01

申请人： Akira Goda ,  Mitsuhiro Noguchi ,  Masayuki Tanaka ,  Shigehiko Saida

发明人： Akira Goda ,  Mitsuhiro Noguchi ,  Masayuki Tanaka ,  Shigehiko Saida

IPC分类号： H01L27/10 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76

CPC分类号： H01L27/11568 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11546

摘要： A semiconductor integrated circuit is disclosed, which includes a semiconductor substrate, a memory cell formed on the semiconductor substrate and having a first gate insulating layer of a stacked structure which includes a silicon nitride layer to become a charge storage layer, and a transistor formed on the semiconductor substrate and having a second gate insulating layer. Here, source and drain diffused layers of the memory cell are covered with a part of the first gate insulating layer, and metal silicide layers are formed on surfaces of source and drain diffused layers of the transistor.

摘要翻译： 公开了一种半导体集成电路，其包括半导体衬底，形成在半导体衬底上的存储单元，并且具有堆叠结构的第一栅极绝缘层，其包括形成电荷存储层的氮化硅层，以及形成在 半导体衬底并具有第二栅极绝缘层。 这里，存储单元的源极和漏极扩散层被第一栅极绝缘层的一部分覆盖，并且金属硅化物层形成在晶体管的源极和漏极扩散层的表面上。

公开(公告)号：US20050006696A1

公开(公告)日：2005-01-13

申请号：US10850408

申请日：2004-05-21

申请人： Mitsuhiro Noguchi ,  Akira Goda ,  Masayuki Tanaka

发明人： Mitsuhiro Noguchi ,  Akira Goda ,  Masayuki Tanaka

IPC分类号： G11C16/04 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/115 ,  H01L27/148 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/11568 ,  G11C16/0466 ,  G11C16/0483 ,  H01L27/115 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/792

摘要： A semiconductor memory having an electrically writable/erasable memory cell includes a first gate insulating layer made from a compound containing silicon and oxygen; a first charge-storage layer being in contact with the first gate insulating layer made from a silicon nitride film, a silicon oxynitride film, or an alumina film; a second insulating layer thicker than the first gate insulting layer; a second charge-storage layer being in contact with the second insulating layer; a third insulating layer thicker than the first gate insulating layer being in contact with the second charge-storage layer; and a control electrode upon the third insulating layer.

摘要翻译： 具有电可写/可擦除存储单元的半导体存储器包括由含硅和氧的化合物制成的第一栅极绝缘层; 与由氮化硅膜，氮氧化硅膜或氧化铝膜构成的第一栅极绝缘层接触的第一电荷存储层; 比第一栅极绝缘层厚的第二绝缘层; 与第二绝缘层接触的第二电荷存储层; 比所述第一栅极绝缘层更厚的与所述第二电荷存储层接触的第三绝缘层; 以及在所述第三绝缘层上的控制电极。