公开(公告)号：US20110244617A1

公开(公告)日：2011-10-06

申请号：US13052861

申请日：2011-03-21

申请人： Jie Su

发明人： Jie Su

IPC分类号： H01L33/02

CPC分类号： H01L33/007 ,  C23C16/301 ,  C23C16/303 ,  C23C16/54 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262

摘要： The present invention generally provides apparatus and methods for forming LED structures. In one embodiment where a sapphire substrate is selected, the growth of bulk Group III-nitrides may be deposited in a HVPE or MOCVD chamber while a separate processing chamber, such as a PVD, MOCVD, CVD, or ALD chamber, may be used to grow buffer layers on the sapphire substrate at lower growth rate. The buffer layer may be GaN, AlN, AlGaN, InGaN, or InAlGaN. In another embodiment where a silicon-based substrate is selected, the growth of bulk Group III-nitrides may be deposited in a HVPE or MOCVD chamber in which an Al-free environment is provided while a separate processing chamber with a Ga-free environment is used to grow a Ga-free buffer layer, such as Al, AlN, or SiN, on the silicon-based substrate. The separate processing chamber may be a PVD, CVD, MOCVD, a plasma assisted MOCVD, or other vapor phase deposition techniques.

摘要翻译： 本发明总体上提供了用于形成LED结构的装置和方法。 在选择蓝宝石衬底的一个实施例中，本体III族氮化物的生长可以沉积在HVPE或MOCVD室中，同时可以使用诸如PVD，MOCVD，CVD或ALD室的单独的处理室来 以较低的生长速率在蓝宝石衬底上生长缓冲层。 缓冲层可以是GaN，AlN，AlGaN，InGaN或InAlGaN。 在选择硅基衬底的另一个实施方案中，本体III族氮化物的生长可以沉积在其中提供无Al环境的HVPE或MOCVD室中，而具有无Ga的环境的单独的处理室是 用于在硅基衬底上生长诸如Al，AlN或SiN之类的无Ga缓冲层。 单独的处理室可以是PVD，CVD，MOCVD，等离子体辅助MOCVD或其它气相沉积技术。

公开(公告)号：US20110143471A1

公开(公告)日：2011-06-16

申请号：US12966636

申请日：2010-12-13

申请人： Jie Su

发明人： Jie Su

IPC分类号： H01L21/20

CPC分类号： H01L21/0254 ,  C23C16/18 ,  C23C16/20 ,  C23C16/56 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02656 ,  H01L33/007

摘要： Surface passivation techniques for chamber-split processing are described. A method includes forming a first Group III-V material layer above a substrate, the first Group III-V material layer having a top surface. A passivation layer is deposited on the top surface of the Group III-V material layer. The passivation layer is removed. Subsequently, a second Group III-V material layer is formed above the first Group III-V material layer.

摘要翻译： 描述了室分离处理的表面钝化技术。 一种方法包括在衬底上形成第一III-V族材料层，第一III-V族材料层具有顶表面。 钝化层沉积在III-V族材料层的顶表面上。 去除钝化层。 随后，在第一III-V族材料层的上方形成第二III-V族材料层。

公开(公告)号：US20110117728A1

公开(公告)日：2011-05-19

申请号：US12868899

申请日：2010-08-26

申请人： Jie Su ,  Lori D. Washington ,  Sandeep Nijhawan ,  Olga Kryliouk ,  Jacob Grayson ,  Sang Won Kang ,  Dong Hyung Lee ,  Hua Chung

发明人： Jie Su ,  Lori D. Washington ,  Sandeep Nijhawan ,  Olga Kryliouk ,  Jacob Grayson ,  Sang Won Kang ,  Dong Hyung Lee ,  Hua Chung

IPC分类号： H01L21/20 ,  B08B9/00

CPC分类号： C23C16/4405 ,  C23C16/4404 ,  C23C16/45574 ,  H01L21/67115

摘要： A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.

摘要翻译： 一种用于从处理室的内表面去除沉积产物并用于防止或减缓这种沉积产物的生长的方法和装置。 将含卤素气体提供到室以蚀刻掉沉积产物。 将卤素清除气体提供到室以除去任何残留的卤素。 卤素清除气体通常通过暴露于电磁能（通过热能在处理室内）或通过电场，UV或微波在远程室中而被激活。 可以将沉积前体添加到卤素清除气体中，以在室的内表面上形成耐沉积膜。 另外，或者也可以通过在PVD工艺中将耐沉积金属溅射到处理室的内部部件上来形成耐沉积膜。

公开(公告)号：US20110030615A1

公开(公告)日：2011-02-10

申请号：US12847713

申请日：2010-07-30

申请人： KEVIN GRIFFIN ,  Olga Kryliouk ,  Jie Su

发明人： KEVIN GRIFFIN ,  Olga Kryliouk ,  Jie Su

IPC分类号： C23C16/52 ,  B08B7/00

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/45572

摘要： The present invention generally provides a method and apparatus for cleaning a showerhead of a deposition chamber, such as a metal organic chemical vapor deposition (MOCVD) chamber. In one embodiment, the showerhead is cleaned without exposing the chamber to the atmosphere outside of the chamber (i.e., in situ cleaning). In one embodiment, flow of liquid coolant through a cooling system that is in fluid communication with the showerhead is redirected to bypass the showerhead, and the liquid coolant is drained from the showerhead. In one embodiment, any remaining coolant is flushed from the showerhead via a pressurized gas source. In one embodiment, the showerhead is then heated to an appropriate cleaning temperature. In one embodiment, the flow of liquid coolant from the cooling system is then redirected to the showerhead and the system is adjusted for continued processing. Thus, the entire showerhead cleaning process is performed with minimal change to the flow of coolant through the cooling system.

摘要翻译： 本发明总体上提供了一种用于清洁诸如金属有机化学气相沉积（MOCVD）室的沉积室的喷头的方法和装置。 在一个实施例中，清洁喷头而不将室暴露于室外的大气（即，原位清洁）。 在一个实施例中，通过与喷头流体连通的冷却系统的液体冷却剂的流动被重定向以绕过喷头，并且液体冷却剂从喷头排出。 在一个实施例中，任何剩余的冷却剂通过加压气体源从喷头冲洗。 在一个实施例中，然后将喷头加热到适当的清洁温度。 在一个实施例中，来自冷却系统的液体冷却剂的流动然后被重定向到喷头，并且系统被调整以用于继续处理。 因此，整个喷头清洁过程是通过冷却系统对冷却剂流动的最小变化进行的。

公开(公告)号：US07796688B2

公开(公告)日：2010-09-14

申请号：US11751771

申请日：2007-05-22

申请人： Jie Su

发明人： Jie Su

IPC分类号： H03H7/30 ,  H04B1/10

CPC分类号： H04B1/1646 ,  H04L25/03057 ,  H04L27/14

摘要： A radio receiver for receiving a signal is provided. The radio receiver comprises an equalizer configured to perform a constant modulus algorithm initialized using a first set of coefficients on the received signal and for generating an equalized signal. The radio receiver further comprises a demodulator coupled to the equalizer for demodulating the equalized signal. The radio receiver further comprises a lowpass filter coupled to the demodulator for lowpass filtering the demodulated signal to detect a spurious signal and to generate an offset signal. The radio receiver further comprises a coefficient generator coupled to the lowpass filter and configured to compare the offset signal to a predetermined threshold, and if the offset signal satisfies a predetermined condition in relation to the predetermined threshold, then to generate a second set of coefficients for re-initializing the constant modulus algorithm.

摘要翻译： 提供了一种用于接收信号的无线电接收机。 无线电接收机包括均衡器，其被配置为执行使用接收信号上的第一组系数来初始化的恒模算法，并用于产生均衡的信号。 无线电接收机还包括耦合到均衡器的解调器，用于解调均衡信号。 无线电接收机还包括耦合到解调器的低通滤波器，用于对解调信号进行低通滤波，以检测寄生信号并产生偏移信号。 无线电接收机还包括耦合到低通滤波器并被配置为将偏移信号与预定阈值进行比较的系数发生器，并且如果偏移信号相对于预定阈值满足预定条件，则为了产生第二组系数， 重新初始化恒模算法。

公开(公告)号：US07627030B2

公开(公告)日：2009-12-01

申请号：US11198602

申请日：2005-08-05

申请人： Jie Su ,  Yong Wang

发明人： Jie Su ,  Yong Wang

IPC分类号： H03H7/30

CPC分类号： H04B1/1027

摘要： A controllable equalizer is arranged to be automatically and selectively disabled and is configured to operate in a frequency modulated (FM) radio receiver. The controllable equalizer includes an equalizer (115) that is configured to perform an equalization algorithm, e.g., CMA, that relies on a predetermined distribution for a received signal, where the received signal is available from the FM radio receiver and a spurious signal detector (123) that is configured to determine whether a spurious signal is present in the received signal and to disable the equalizer when the spurious signal is present. A method (300) of automatically and selectively disabling an equalizer operating in a frequency modulated (FM) radio receiver includes performing an equalization algorithm (307) on an FM received signal, the equalization algorithm relying on a predetermined distribution of the FM received signal, determining whether a spurious signal is present (309) in the FM received signal; and disabling the equalizer (317) when the spurious signal is present in the FM received signal.

摘要翻译： 可控均衡器被布置成自动和选择性地禁用并且被配置为在调频（FM）无线电接收机中操作。 可控均衡器包括均衡器（115），其被配置为执行均衡算法，例如CMA，其依赖于接收信号的预定分布，其中接收信号可从FM无线电接收机和伪信号检测器（ 123），其被配置为确定寄生信号是否存在于接收信号中，并且当寄生信号存在时禁止均衡器。 自动和选择性地禁用在调频（FM）无线电接收机中操作的均衡器的方法（300）包括对FM接收信号执行均衡算法（307），所述均衡算法依赖于FM接收信号的预定分布， 确定FM接收信号中是否存在杂散信号（309）; 以及当FM接收信号中存在杂散信号时禁止均衡器（317）。

公开(公告)号：US20090149008A1

公开(公告)日：2009-06-11

申请号：US12244440

申请日：2008-10-02

申请人： Olga Kryliouk ,  Sandeep Nijhawan ,  Yuriy Melnik ,  Lori D. Washington ,  Jacob W. Grayson ,  Sung W. Jun ,  Jie Su

发明人： Olga Kryliouk ,  Sandeep Nijhawan ,  Yuriy Melnik ,  Lori D. Washington ,  Jacob W. Grayson ,  Sung W. Jun ,  Jie Su

IPC分类号： H01L21/20

CPC分类号： C30B25/02 ,  C23C16/303 ,  C23C16/4488 ,  C23C16/45578 ,  C30B29/403

摘要： Embodiments of the invention generally relate to methods for forming Group III-V materials by a hydride vapor phase epitaxy (HVPE) process. In one embodiment, a method for forming a gallium nitride material on a substrate within a processing chamber is provided which includes heating a metallic source to form a heated metallic source, wherein the heated metallic source contains gallium, aluminum, indium, alloys thereof, or combinations thereof, exposing the heated metallic source to chlorine gas while forming a metallic chloride gas, exposing the substrate to the metallic chloride gas and a nitrogen precursor gas while forming a metal nitride layer on the substrate during the HVPE process. The method further provides exposing the substrate to chlorine gas during a pretreatment process prior to forming the metal nitride layer. In one example, the exhaust conduit of the processing chamber is heated to about 200° C. or less during the pretreatment process.

摘要翻译： 本发明的实施方案一般涉及通过氢化物气相外延（HVPE）方法形成III-V族材料的方法。 在一个实施例中，提供了一种用于在处理室内的衬底上形成氮化镓材料的方法，其包括加热金属源以形成加热的金属源，其中加热的金属源包含镓，铝，铟，其合金或 其组合，同时形成金属氯化物气体，将加热的金属源暴露于氯气中，在HVPE工艺期间在衬底上形成金属氮化物层，同时将衬底暴露于金属氯化物气体和氮气前体气体。 该方法还在形成金属氮化物层之前在预处理工艺期间将衬底暴露于氯气。 在一个实例中，处理室的排气管道在预处理过程中被加热到约200℃或更低。

公开(公告)号：US20080296594A1

公开(公告)日：2008-12-04

申请号：US12173424

申请日：2008-07-15

申请人： David Bour ,  Jacob Smith ,  Jie Su ,  Sandeep Nijhawan

发明人： David Bour ,  Jacob Smith ,  Jie Su ,  Sandeep Nijhawan

IPC分类号： H01L33/00

CPC分类号： H01L33/007

摘要： Nitride optoelectronic devices that have asymmetric double-sided structures and methods fabricating such structures are disclosed. Two n-type III-N layers are formed simultaneously over opposite sides of a substrate with substantially the same composition. Thereafter, a p-type III-N active layer is formed over one of the n-type III-N layers but not over the other.

摘要翻译： 公开了具有非对称双面结构的氮化物光电器件和制造这种结构的方法。 两个n型III-N层同时形成在具有基本相同组成的衬底的相对侧上。 此后，在n型III-N层之一上形成p型III-N有源层，而不是在另一层上形成p型III-N有源层。

公开(公告)号：US07407872B2

公开(公告)日：2008-08-05

申请号：US11207226

申请日：2005-08-19

申请人： Jung Han ,  Jie Su

发明人： Jung Han ,  Jie Su

IPC分类号： H01L21/205

CPC分类号： H01L21/02645 ,  B82Y10/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/2003 ,  Y10S977/763

摘要： Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

摘要翻译： 在这项工作中证明了III-Nitride纳米线的高度排列和排列的外延。 通过透射电子显微镜对GaN / AlN树干/分支纳米结构的详细研究，将M轴识别为优选的纳米线生长方向。 晶体选择性可用于实现纳米线生长的空间和取向控制。 在M面AlN衬底上制备垂直取向（Al）GaN纳米线。 从GaN六边形台面或岛的M面侧延伸出的水平排列的纳米线为自对准纳米线器件，互连和网络提供了新的机遇。

公开(公告)号：US20080124463A1

公开(公告)日：2008-05-29

申请号：US11564198

申请日：2006-11-28

申请人： David Bour ,  Lori Washington ,  Sandeep Nijhawan ,  Ronald Stevens ,  Jacob Smith ,  Alexander Tam ,  Nyi O. Myo ,  Steve Park ,  Rosemary Twist ,  Garry Kwong ,  Jie Su

发明人： David Bour ,  Lori Washington ,  Sandeep Nijhawan ,  Ronald Stevens ,  Jacob Smith ,  Alexander Tam ,  Nyi O. Myo ,  Steve Park ,  Rosemary Twist ,  Garry Kwong ,  Jie Su

IPC分类号： C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/45514 ,  C23C16/45572 ,  C23C16/45574

摘要： A gaseous mixture is deposited onto a substrate surface using a showerhead. A first plenum of the showerhead has a plurality of channels fluidicly coupled with an interior of a processing chamber. A second plenum gas flows through a plurality of tubes extending from a second plenum of the showerhead through the channels into the interior of the processing chamber. The diameter of the tubes is smaller than the diameter of the channels such that a first plenum gas flows into the interior of the processing chamber through a space defined between the outer surface of the tubes and the surface of the channels. The length and diameter of the tubes determine the level of distribution and the molar ratio of the first gas and the second gas in the gaseous mixture that is deposited on the surface of the substrate.

摘要翻译： 使用喷头将气体混合物沉积到基底表面上。 喷头的第一增压室具有与处理室的内部流体耦合的多个通道。 第二增压气体流过从喷头的第二增压室通过通道延伸到处理室内部的多个管。 管的直径小于通道的直径，使得第一增压气体通过限定在管的外表面和通道表面之间的空间流入处理室的内部。 管的长度和直径确定沉积在基底表面上的气态混合物中的分布水平和第一气体与第二气体的摩尔比。