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公开(公告)号：US06746891B2
公开(公告)日：2004-06-08
申请号：US10290920
申请日：2002-11-08
Applicant: Shawn Jay Cunningham , Svetlana Tatic-Lucic
Inventor： Shawn Jay Cunningham , Svetlana Tatic-Lucic
IPC: H01L2100
CPC classification number: B81B3/0024 , B81B3/0051 , B81B2201/014 , B81B2201/018 , B81B2203/0118 , B81B2203/04 , B81B2207/07 , B81C1/0015 , B81C2201/0107 , B81C2201/0108 , B81C2201/0109 , H01H1/04 , H01H1/504 , H01H59/0009 , H01H61/04 , H01H2001/0042 , H01H2001/0063 , H01H2001/0089 , H01H2059/0072 , H01H2061/006 , H01L23/3735 , H01L23/522 , H01L27/1203 , H01L2924/0002 , H01L2924/09701 , H02N1/006 , H02N10/00 , Y10T29/49222 , H01L2924/00
Abstract: Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.
Abstract translation: 三层梁MEMS器件及相关方法。 根据一个实施例，提供一种制造三层梁的方法。 该方法可以包括在衬底上沉积牺牲层并在牺牲层上沉积第一导电层。 该方法还可以包括通过去除第一导电层的一部分来形成第一导电微结构。 此外，该方法可以包括在第一导电微结构，牺牲层和衬底上沉积结构层，并且通过结构层将通孔形成到第一导电微结构。 此外，该方法可以包括以下：在结构层和通孔中沉积第二导电层; 通过去除所述第二导电层的一部分来形成第二导电微结构，其中所述第二导电微结构通过所述通孔与所述第一导电微结构电连通; 以及去除足够量的牺牲层以便将第一导电微结构与衬底分开，其中结构层在第一端由衬底支撑并且在相对的第二端处自由地悬挂在衬底上方。
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72.发明申请Micro-scale interconnect device with internal heat spreader and method for fabricating same 有权具有内部散热器的微尺寸互连装置及其制造方法公开(公告)号：US20030116851A1
公开(公告)日：2003-06-26
申请号：US10291146
申请日：2002-11-08
Applicant: Coventor, Inc.
Inventor： Subham Sett , Shawn Jay Cunningham
IPC: H01L021/4763 , H01L023/52 , H01L029/40
CPC classification number: B81B3/0024 , B81B3/0051 , B81B2201/014 , B81B2201/018 , B81B2203/0118 , B81B2203/04 , B81B2207/07 , B81C1/0015 , B81C2201/0107 , B81C2201/0108 , B81C2201/0109 , H01H1/04 , H01H1/504 , H01H59/0009 , H01H61/04 , H01H2001/0042 , H01H2001/0063 , H01H2001/0089 , H01H2059/0072 , H01H2061/006 , H01L23/3735 , H01L23/522 , H01L27/1203 , H01L2924/0002 , H01L2924/09701 , H02N1/006 , H02N10/00 , Y10T29/49222 , H01L2924/00
Abstract: A micro-scale interconnect device with internal heat spreader and method for fabricating same. The device includes first and second arrays of generally coplanar electrical communication lines. The first array is disposed generally along a first plane, and the second array is disposed generally along a second plane spaced from the first plane. The arrays are electrically isolated from each other. Embedded within the interconnect device is a heat spreader element. The heat spreader element comprises a dielectric material disposed in thermal contact with at least one of the arrays, and a layer of thermally conductive material embedded in the dielectric material. The device is fabricated by forming layers of electrically conductive, dielectric, and thermally conductive materials on a substrate. The layers are arranged to enable heat energy given off by current-carrying communication lines to be transferred away from the communication lines.
Abstract translation: 具有内部散热器的微尺寸互连装置及其制造方法。 该装置包括大致共面电通信线路的第一和第二阵列。 第一阵列大致沿着第一平面布置，并且第二阵列通常沿着与第一平面间隔开的第二平面设置。 阵列彼此电隔离。 嵌入在互连装置内的是散热器元件。 散热器元件包括设置成与阵列中的至少一个热接触的电介质材料，以及嵌入电介质材料中的导热材料层。 该器件通过在衬底上形成导电的，介电的和导热的材料层来制造。 这些层被布置成使得通过载流通信线路发出的热能被远离通信线路。
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公开(公告)号：US20030116417A1
公开(公告)日：2003-06-26
申请号：US10291107
申请日：2002-11-08
Applicant: Coventor, Inc.
Inventor： Dana Richard DeReus
IPC: H01H057/00 , H02B001/00 , H02H001/00
CPC classification number: B81B3/0024 , B81B3/0051 , B81B2201/014 , B81B2201/018 , B81B2203/0118 , B81B2203/04 , B81B2207/07 , B81C1/0015 , B81C2201/0107 , B81C2201/0108 , B81C2201/0109 , H01H1/04 , H01H1/504 , H01H59/0009 , H01H61/04 , H01H2001/0042 , H01H2001/0063 , H01H2001/0089 , H01H2059/0072 , H01H2061/006 , H01L23/3735 , H01L23/522 , H01L27/1203 , H01L2924/0002 , H01L2924/09701 , H02N1/006 , H02N10/00 , Y10T29/49222 , H01L2924/00
Abstract: MEMS Device Having Contact and Standoff Bumps and Related Methods. According to one embodiment, a movable MEMS component suspended over a substrate is provided. The component can include a structural layer having a movable electrode separated from a substrate by a gap. The component can also include at least one standoff bump attached to the structural layer and extending into the gap for preventing contact of the movable electrode with conductive material when the component moves.
Abstract translation: 具有接触和间接碰撞的MEMS器件及相关方法。 根据一个实施例，提供悬挂在衬底上的可移动MEMS组件。 该部件可以包括具有通过间隙从基板分离的可移动电极的结构层。 该部件还可以包括附接到结构层并延伸到间隙中的至少一个支座凸块，以防止当部件移动时可动电极与导电材料的接触。
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公开(公告)号：US20180201503A1
公开(公告)日：2018-07-19
申请号：US15923013
申请日：2018-03-16
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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公开(公告)号：US20180201502A1
公开(公告)日：2018-07-19
申请号：US15916962
申请日：2018-03-09
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both metal material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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Patent Agency Ranking
公开(公告)号：US09981842B2
公开(公告)日：2018-05-29
申请号：US15162988
申请日：2016-05-24
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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公开(公告)号：US09873137B2
公开(公告)日：2018-01-23
申请号：US14799632
申请日：2015-07-15
Applicant: HITACHI, LTD.
Inventor： Shuntaro Machida , Takashi Kobayashi
CPC classification number: B06B1/0292 , B81C1/00158 , B81C1/00182 , B81C1/00214 , B81C1/00476 , B81C1/00531 , B81C1/00611 , B81C2201/0104 , B81C2201/0107 , B81C2201/0109 , C09K13/00 , C23F4/00 , H01L21/30604 , H01L29/84 , Y10T29/49156
Abstract: Disclosed is an ultrasonic transducer that is provided with: a bottom electrode; an electric connection part which is connected to the bottom electrode from the bottom of the bottom electrode; a first insulating film which is formed so as to cover the bottom electrode; a cavity which is formed on the first insulating film so as to overlap the bottom electrode when seen from above; a second insulating film which is formed so as to cover the cavity; and a top electrode which is formed on the second insulating film so as to overlap the cavity when seen from above. The electric connection part to the bottom electrode is positioned so as to not overlap the cavity when seen from above.
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公开(公告)号：US09845235B2
公开(公告)日：2017-12-19
申请号：US14844132
申请日：2015-09-03
Applicant: General Electric Company
Inventor： Joleyn Eileen Brewer , Christopher Fred Keimel , Marco Francesco Aimi , Andrew Minnick , Renner Stephen Ruffalo
CPC classification number: B81B3/0027 , B81B3/0075 , B81B7/0003 , B81B7/008 , B81B2201/01 , B81B2201/014 , B81B2201/0228 , B81B2203/0118 , B81B2203/0127 , B81B2203/0315 , B81B2203/053 , B81B2207/015 , B81B2207/115 , B81C1/00134 , B81C1/0015 , B81C1/00158 , B81C1/00182 , B81C1/00373 , B81C2201/0107 , G01L9/0042 , G01L9/0044
Abstract: A system and method for a micro-electrical-mechanical system (MEMS) device including a substrate and a free-standing and suspended electroplated metal MEMS structure formed on the substrate. The free-standing and suspended electroplated metal MEMS structure includes a metal mechanical element mechanically coupled to the substrate and a seed layer mechanically coupled to and in electrical communication with the mechanical element, the seed layer comprising at least one of a refractory metal and a refractory metal alloy, wherein a thickness of the mechanical element is substantially greater than a thickness of the seed layer such that the mechanical and electrical properties of the free-standing and suspended electroplated metal MEMS structure are defined by the material properties of the mechanical element.
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公开(公告)号：US20160264406A1
公开(公告)日：2016-09-15
申请号：US15162994
申请日：2016-05-24
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
IPC: B81C1/00
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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80.发明申请公开(公告)号：US20150368090A1
公开(公告)日：2015-12-24
申请号：US14837024
申请日：2015-08-27
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
IPC: B81B3/00
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
Abstract translation: 公开了微机电系统（MEMS）结构，制造方法和设计结构。 该方法包括通过在MEMS光束上方和下方排出钨材料和硅材料来形成微电子机械系统（MEMS）光束结构，以在MEMS光束上方形成上腔体，并在MEMS光束下方形成下腔体结构。
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