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441 条记录 (耗时 0.014 秒)

    Method for producing nickel alloy bonding foil
    72.
    发明授权
    Method for producing nickel alloy bonding foil 失效
    生产镍合金粘合剂的方法

    公开(公告)号：US3859144A

    公开(公告)日：1975-01-07

    申请号：US37422673

    申请日：1973-06-27

    申请人： UNITED AIRCRAFT CORP

    发明人： BASCHE MALCOLM ,  KUNTZ URBAN E

    IPC分类号： B23K35/00 ,  B23K35/30 ,  C23C8/08 ,  C23C16/22 ,  C23C11/02

    CPC分类号： C23C8/08 ,  B23K35/004 ,  B23K35/3033 ,  C23C16/22

    摘要： A method for making a nickel-base interlayer alloy article having utility in the diffusion bonding of the nickel-base superalloys comprising pretreating the surface of the nickel-base article by either (1) boronizing by exposure to a gaseous stream consisting essentially of boron trichloride admixed with hydrogen, the ratio of boron trichloride to hydrogen being no greater than 15/3,500 on a volume basis, or (2) siliconizing by exposure to a gaseous stream of silicon tetrachloride admixed with hydrogen, followed by subsequent boronization of the pretreated article by exposure to a gaseous stream consisting essentially of boron trichloride and hydrogen without regard to the 15/3,500 BCl3H2 ratio limit.

    摘要翻译： 一种用于制造镍基中间合金制品的方法，其用于镍基超级合金的扩散接合，包括通过（1）通过暴露于基本上由三氯化硼组成的气流来硼化而预处理镍基制品的表面 与氢混合时，三氯化硼与氢的比例不大于15 / 3,500（体积），或（2）通过暴露于与氢混合的四氯化硅气流中硅化，随后将预处理制品随后硼化 暴露于基本上由三氯化硼和氢气组成的气流，而不考虑15 / 3,500 BCl 3 + 1 {14 H 2比率限度。

    Production of semiconductor material
    74.
    发明授权
    Production of semiconductor material 失效
    生产半导体材料

    公开(公告)号：US3647530A

    公开(公告)日：1972-03-07

    申请号：US3647530D

    申请日：1969-11-13

    申请人： TEXAS INSTRUMENTS INC

    发明人： DYER LAWRENCE D

    IPC分类号： C01B33/035 ,  C23C16/22 ,  H01L3/12

    CPC分类号： C23C16/22 ,  C01B33/035

    摘要： When producing semiconductor bodies by a process of depositing semiconductor material from a gaseous mixture on an elongated crystalline semiconductor starting filament held between two laterally fixed supports, lateral stresses in the filaments are removed by allowing substantially friction-free, lateral movement of the filament as it is heated prior to the vapor deposition. This movement is allowed by melting a coupling segment between the filament and at least one of the supports to thereby allow lateral deformation of the coupling segment as any lateral stress of the filament is relieved. When this method is coupled with conventional means of relieving longitudinal stress in the filament, perfection in grown semiconductor bodies is maintained.

    摘要翻译： 当通过在保持在两个横向固定的支撑件之间的细长结晶半导体起始丝上沉积半导体材料从气态混合物中沉积半导体材料的过程来制造半导体本体时，通过允许丝的基本上无摩擦的横向运动来去除长丝中的横向应力 在气相沉积之前被加热。 通过熔化灯丝与支撑件中的至少一个之间的连接段来允许该移动，从而允许解除连接段的横向变形，因为灯丝的任何横向应力被释放。 当这种方法与常规消除长丝中的纵向应力的方法相结合时，保持了生长的半导体本体的完美。