Abstract:
A method of determining a physical property of a substrate includes recording a first spectrum obtained from a substrate, the first spectrum being obtained during a polishing process that alters a physical property of the substrate. The method includes identifying, in a database, at least one of several previously recorded spectra that is similar to the recorded first spectrum. Each of the spectra in the database has a physical property value associated therewith. The method includes generating a signal indicating that a first value of the physical property is associated with the first spectrum, the first value being determined using the physical property value associated with the identified previously recorded spectrum in the database. A system for determining a physical property of a substrate includes a polishing machine, an endpoint determining module, and a database.
Abstract:
Method, measuring arrangement (23;26;27) and apparatus (1) for optically measuring by interferometry the thickness of an object (2) having an external surface (16) and an internal surface (17) opposite with respect to the external surface. A low coherence beam of radiations (I) is emitted, such beam being composed of a number of wavelengths within a band determined, by means of radiation sources (4a,4b;4c,4d;4ef) which can alternatively employ at least two different radiation beams belonging to differentiated bands, as depending on the thickness of the object, or a single wide band radiation source. The radiation beam is directed onto the external surface of the object by means of an optical probe (6). The radiations (R) that are reflected by the object are caught by means of the optical probe. By means of spectrometers (5;5a,5b;5d,5e;5f,5g) it is possible to analyze the spectrum of the result of the interference between radiations (R1) that are reflected by the external surface without entering the object and radiations (R2) that are reflected by the internal surface entering the object; and the thickness of the object is determined as a function of the spectrum provided by the spectrometers. The two spectrometers can be alternatively used for radiations belonging to each of said differentiated bands.
Abstract:
Reflectance systems and methods are described that under-fill the collection fiber of a host spectrometer both spatially and angularly. The under-filled collection fiber produces a response of fiber-based spectrometers that is relatively insensitive to sample shape and position.
Abstract:
The monitoring apparatus for uniformity and residual thickness of nano-transfer printing process is installed at a specific location in the surrounding of a transfer printing unit, and, during any stage of the transfer printing process, performs monitoring or measuring the forming rate and forming profile of the forming material inside the transfer printing unit. The monitoring apparatus includes a detection unit, a measuring unit and an analysis unit. The detection unit emits a detection ray to the transfer printing unit. The measuring unit receives a reaction signal of the detection ray passing through the transfer printing unit. The analysis unit analyzes the reaction signal to determine transfer uniformity and the material residual thickness in the transfer print unit.
Abstract:
One or more parameters of a sample that includes a textured substrate and one or more overlying films is determined using, e.g., an optical metrology device to direct light to be incident on the sample and detecting light after the incident light interacts with the sample. The acquired data is normalized using reference data that is produced using a textured reference sample. The normalized data is then fit to simulated data that is associated with a model having an untextured substrate and one or more variable parameters. The value(s) of the one or more variable parameters from the model associated with the simulated data having the best fit is reported as measurement result.
Abstract:
A painting station, e.g., for serially painting components such as motor vehicles, is disclosed. A painting station may include at least one painting cell in which components are coated, e.g., with a paint, that has a certain layer thickness. At least one measuring cell is provided for measuring the layer thickness of the paint, e.g., with a radiation source, a radiation detector, and a conveying path along which the components to be coated are conveyed through the painting and measuring cells. The radiation source may emit light in the visible wavelength range.
Abstract:
A computer implemented process for simultaneously measuring the velocity of terahertz electromagnetic radiation in a dielectric material sample without prior knowledge of the thickness of the sample and for measuring the thickness of a material sample using terahertz electromagnetic radiation in a material sample without prior knowledge of the velocity of the terahertz electromagnetic radiation in the sample is disclosed and claimed. Utilizing interactive software the process evaluates, in a plurality of locations, the sample for microstructural variations and for thickness variations and maps the microstructural and thickness variations by location. A thin sheet of dielectric material may be used on top of the sample to create a dielectric mismatch. The approximate focal point of the radiation source (transceiver) is initially determined for good measurements.
Abstract:
In a method of determining the distance (d) between an integrated circuit (1) and a substrate (2) emitted light enters the at least semi transparent substrate (2), passes through the substrate (2) and an at least semi transparent material (8), is reflected by the integrated circuit (1), passes again through the material (8) and the substrate (2), and leaves the substrate (2). The at least semi transparent material (8), particularly is an at least semi transparent adhesive, provided between the substrate (2) and the integrated circuit (1). The distance (d) between the substrate (2) and the integrated circuit (1) is determined by evaluating the intensities of the light leaving and entering the substrate (2), particularly by evaluating the ratio between the intensities of the light leaving and entering the substrate (2).
Abstract:
Photovoltaic thin film quality control is obtained where the thin film is supported by a support and a section of the film is illuminated by a polychromatic or monochromatic illumination source. The source forms on the thin film an illuminated line. The light collected from discrete sampled points located on the illuminated line is transferred to a photo-sensitive sensor through an optical switch. The spectral signal of the light reflected, transmitted or scattered by the sampled points is collected by the sensor, processed and photovoltaic thin film parameters applicable to the quality control are derived e.g. thin film thickness, index of refraction, extinction coefficient, absorption coefficient, energy gap, conductivity, crystallinity, surface roughness, crystal phase, material composition and photoluminescence spectrum and intensity. Manufacturing equipment parameters influencing the material properties may be changed to provide a uniform thin film layer with pre-defined properties.
Abstract:
An inspecting method inspects an optical stacked structure having a reflection layer and at least one light transmitting thin film sequentially stacked on a substrate. The inspecting method irradiates inspection light on the optical stacked structure from a side provided with the light transmitting thin film, measures a light intensity of reflected light from each layer, that changes depending on a change in an optical path length to each layer, and inspects a thickness of the light transmitting thin film based on the light intensity of reflected light for a specific wavelength.