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    Process and structure of an integrated vacuum microelectronic device
    75.
    发明授权
    Process and structure of an integrated vacuum microelectronic device 失效
    集成真空微电子器件的工艺和结构

    公开(公告)号：US5397957A

    公开(公告)日：1995-03-14

    申请号：US974392

    申请日：1992-11-10

    Applicant: Steven M. Zimmerman

    Inventor： Steven M. Zimmerman

    IPC: H01J9/02 ,  H01J21/10 ,  H01J19/24

    CPC classification number: H01J21/105 ,  H01J9/025 ,  H01J2201/30457

    Abstract: The present invention relates generally to a new integrated Vacuum Microelectronic Device (VMD) and a method for making the same. Vacuum Microelectronic Devices require several unique three dimensional structures: a sharp field emission tip, accurate alignment of the tip inside a control grid structure in a vacuum environment, and an anode to collect electrons emitted by the tip. Also disclosed is a new structure and a process for forming diodes, triodes, tetrodes, pentodes and other similar structures. The final structure made can also be connected to other similar VMD devices or to other electronic devices.

    Abstract translation: 本发明一般涉及一种新的集成真空微电子器件（VMD）及其制造方法。 真空微电子器件需要几种独特的三维结构：尖锐的场发射尖端，尖端在真空环境中的控制栅格结构内的精确对准以及用于收集尖端发射的电子的阳极。 还公开了形成二极管，三极管，四极管，五极管和其他类似结构的新结构和工艺。 所制造的最终结构也可以连接到其他类似的VMD设备或其他电子设备。

    Electron device employing a diamond film electron source
    76.
    发明授权
    Electron device employing a diamond film electron source 失效
    采用金刚石膜电子源的电子器件

    公开(公告)号：US5289086A

    公开(公告)日：1994-02-22

    申请号：US877931

    申请日：1992-05-04

    Applicant: Robert C. Kane

    Inventor： Robert C. Kane

    IPC: H01J1/304 ,  H01J3/02 ,  H01J1/46 ,  H05B41/00

    CPC classification number: H01J3/022 ,  H01J2201/30457

    Abstract: An electron device including a diamond material electron emitter and an anode, both disposed on a supporting substrate, so as to define an interelectrode region therebetween. Electron transport across the interelectrode region is initiated at an emitting surface of the diamond material electron emitter. An alternative embodiment employs a gate electrode disposed substantially symmetrically and axially displaced about the electron emitter and substantially in the interelectrode region to provide a modulation capability.

    Abstract translation: 一种包括金刚石材料电子发射器和阳极的电子器件，均设置在支撑衬底上，以便在它们之间限定电极间区域。 穿过电极间区域的电子传输在金刚石材料电子发射体的发射表面处开始。 替代实施例采用围绕电子发射器和基本上在电极间区域中大致对称和轴向位移设置的栅电极，以提供调制能力。

    Scanning tunneling microscope tips
    77.
    发明授权
    Scanning tunneling microscope tips 失效
    扫描隧道显微镜技巧

    公开(公告)号：US5164595A

    公开(公告)日：1992-11-17

    申请号：US782638

    申请日：1991-10-25

    Applicant: Inga H. Musselman ,  Phillip E. Russell

    Inventor： Inga H. Musselman ,  Phillip E. Russell

    IPC: C25F3/02 ,  C25F3/16 ,  G01Q60/16 ,  H01J9/02

    CPC classification number: G01Q60/16 ,  B82Y35/00 ,  C25F3/02 ,  C25F3/16 ,  H01J9/025 ,  H01J2201/30457 ,  Y10S977/861 ,  Y10S977/875 ,  Y10S977/878 ,  Y10S977/888

    Abstract: A method of fabricating a double-tapered scanning tunneling microscope comprises (a) immersing one end of the tip in a bath of an acidic aqueous etchant solution containing an alkaline earth salt, with the wire positioned substantially perpendicularly to the surface of the solution; and (b) etching the wire at about 25 volts root mean squared (rms) alternating current (ac) until a double-tapered tip is formed thereon. The etching step is preferably followed by a polishing step which comprises (c) providing a thin film of a second acidic aqueous etchant solution containing an alkaline earth salt; then (d) contacting said electrode tip to the thin film: and then (e) etching the tip at about 2 volts rms ac to thereby polish the tip.Also disclosed is a method of inhibiting the formation of carbon on a scanning tunneling microscope tip which comprises (a) positioning a wire in an etchant solution and then (b) etching the wire while excluding carbon dioxide therefrom.Double-tapered scanning tunneling microscope tip comprises of an elongate wire and methods of using the same are also disclosed.

    Abstract translation: 制造双锥形扫描隧道显微镜的方法包括（a）将尖端的一端浸入含有碱土盐的酸性含水蚀刻剂溶液的浴中，其中丝线基本上垂直于溶液的表面定位; 并且（b）以约25伏的均方根（rms）交流电（ac）蚀刻线，直到其上形成双锥形尖端。 优选的蚀刻步骤之后是抛光步骤，其包括（c）提供含有碱土金属盐的第二酸性水性蚀刻剂溶液的薄膜; 然后（d）使所述电极尖端接触所述薄膜：然后（e）以约2伏rms ac蚀刻所述尖端，从而抛光所述尖端。 还公开了一种在扫描隧道显微镜尖端上抑制碳的形成的方法，其包括（a）将焊丝定位在蚀刻剂溶液中，然后（b）在不排除二氧化碳的情况下蚀刻线。 双锥形扫描隧道显微镜尖端包括细长线，并且还公开了使用它们的方法。

    Ultrasharp polycrystalline diamond edges, points, and improved diamond composites, and methods of making and irradiating same
    79.
    发明授权
    Ultrasharp polycrystalline diamond edges, points, and improved diamond composites, and methods of making and irradiating same 失效
    Ultrasharp多晶金刚石边缘，点和改进的金刚石复合材料，以及制造和照射相同的方法

    公开(公告)号：US4273561A

    公开(公告)日：1981-06-16

    申请号：US63685

    申请日：1979-08-06

    Applicant: Humberto Fernandez-Moran Villalobos

    Inventor： Humberto Fernandez-Moran Villalobos

    IPC: B01J3/08 ,  B24D18/00 ,  H01J1/304 ,  H01J9/02 ,  B24D3/04

    CPC classification number: H01J9/022 ,  B01J3/08 ,  H01J1/304 ,  B01J2203/061 ,  B01J2203/0655 ,  H01J2201/30457 ,  Y10S505/825 ,  Y10T83/293

    Abstract: Ultrasharp polycrystalline diamond edges, points, and improved diamond composites of predetermined configuration usable as cutting instruments, as high intensity sources for the emission of electrons, ions, neutrons, x-rays, coherent and incoherent light and high frequency electromagnetic radiation, and as ultraprecision molded mechanical and optical parts, or as high field permanent magnets or electrets, are produced by preparing and classifying natural and synthetic ultrafine uniform graphite particles, preferably of the rhombohedral phase, which are directly converted into diamond particles having a particle size of 3 to 100 angstroms, placing the ultrafine powder, either before or after the synthesis, with or without suitable additives, in a diamond mold defining the ultrafine edge or form to be produced, and applying a pressure of the order of 80 to 90 kb, preferably dynamic or static ultrahigh pressures of 100 to about 1000 kb, while heating the powder to a temperature of the order of 2440.degree. K. to 2500.degree. K., or preferably in the range of 2500.degree. to 3000.degree. K., in an ultrahigh vacuum or inert atmosphere after degassing to remove contaminants and avoid oxidation of the diamond powder. The requisite dimensional tolerances of the order of 10 to 100 angstroms are reproducibly obtained by final electron beam glazing and annealing using liquid helium systems with superconducting lenses of special design.

    Abstract translation: 超高分子多晶金刚石边缘，点和可用作切割仪器的预定配置的改进的金刚石复合材料作为用于发射电子，离子，中子，x射线，相干和非相干光以及高频电磁辐射的高强度源，以及超精密 模制的机械和光学部件，或作为高场永久磁铁或驻极体，通过制备和分级天然和合成的超细均匀石墨颗粒（优选菱方相）直接转化成粒度为3至100的金刚石颗粒来生产 埃，在合成之前或之后，使用或不使用合适的添加剂将超细粉末放置在限定要生产的超细边缘或形式的金刚石模具中，并施加大约80至90kb的压力，优选动态或 100至约1000 kb的静态超高压，同时将粉末加热至一定温度 呃在超高真空或惰性气氛中脱气除去污染物并避免金刚石粉末的氧化，在2440°K至2500°K范围内，或优选在2500°至3000°K的范围内。 通过使用具有特殊设计的超导透镜的液氦系统的最终电子束玻璃化和退火可重复地获得10至100埃数量级的必要尺寸公差。

    Polycrystalline diamond emitter
    80.
    发明授权
    Polycrystalline diamond emitter 失效
    多晶金刚石发射体

    公开(公告)号：US4164680A

    公开(公告)日：1979-08-14

    申请号：US852022

    申请日：1977-11-16

    Applicant: Humberto F. Villalobos

    Inventor： Humberto F. Villalobos

    IPC: B24D18/00 ,  H01J1/304 ,  H01J9/02 ,  H01J1/16 ,  H01J1/14

    CPC classification number: H01J9/022 ,  H01J1/304 ,  B01J2203/061 ,  B01J2203/0655 ,  H01J2201/30457 ,  Y10S505/879

    Abstract: Ultrasharp diamond edges and points which are usable as high intensity point sources for the emission of electrons, ions, X-rays, coherent and incoherent light and high frequency electromagnetic radiation are produced by preparing and classifying ultrafine diamond powder having a particle size of 10 to 100 angstroms, placing the powder in a diamond mold defining the ultrasharp edge or point to be produced and applying a pressure of the order of 80 to 90 kb while heating the powder to a temperature of the order of 2440.degree. K. in an ultrahigh vacuum or inert atmosphere after degasing to avoid oxidation of the diamond powder.

    Abstract translation: Ultrasharp金刚石边缘和可用作发射电子，离子，X射线，相干和非相干光以及高频电磁辐射的高强度点光源的点是通过制备和分级粒径为10〜 将该粉末置于金刚石模具中，限定超薄边缘或要生产的点，并施加大约80至90KB的压力，同时在超高真空中将粉末加热至2440°K左右的温度 或惰性气氛，以避免金刚石粉末的氧化。

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