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116 条记录 (耗时 0.015 秒)

    Semiconductor light emitting device
    71.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US07973329B2

    公开(公告)日：2011-07-05

    申请号：US12428622

    申请日：2009-04-23

    申请人： Sang Youl Lee

    发明人： Sang Youl Lee

    IPC分类号： H01L33/00 ,  H01L27/15 ,  H01L21/12

    CPC分类号： H01L33/385 ,  H01L33/0079 ,  H01L33/44

    摘要： Embodiments provides a semiconductor light emitting device, which comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, an insulator on one side of the second electrode layer, and a first electrode electrically connected to a one end of the first conductive semiconductor layer, on the insulator.

    摘要翻译： 实施例提供了一种半导体发光器件，其包括第一导电半导体层，第一导电半导体层下方的有源层，有源层下的第二导电半导体层，第二导电半导体层下的第二电极层， 第二电极层的一侧和与第一导电半导体层的一端电连接的绝缘体上的第一电极。

    DUAL METAL GATES FOR MUGFET DEVICE
    72.
    发明申请
    DUAL METAL GATES FOR MUGFET DEVICE 有权
    双金属门为MUGFET设备

    公开(公告)号：US20080272433A1

    公开(公告)日：2008-11-06

    申请号：US11744322

    申请日：2007-05-04

    申请人： Husam Niman Alshareef ,  Weize Xiong

    发明人： Husam Niman Alshareef ,  Weize Xiong

    IPC分类号： H01L21/12 ,  H01L21/84

    CPC分类号： H01L27/1211 ,  H01L21/28088 ,  H01L21/84 ,  H01L21/845 ,  H01L27/1203 ,  H01L29/4966 ,  H01L29/66795 ,  H01L29/785

    摘要： Exemplary embodiments provide methods and structures for controlling work function values of dual metal gate electrodes for transistor devices. Specifically, the work function value of one of the PMOS and NMOS metal gate electrodes can be controlled by a reaction between stacked layers deposited on a gate dielectric material. The stacked layers can include a first-metal-containing material such as Al2O3, and/or AlN overlaid by a second-metal-containing material such as TaN, TiN, WN, MoN or their respective metals. The reaction between the stacked layers can create a metal gate material with a desired work function value ranging from about 4.35 eV to about 5.0 eV. The disclosed methods and structures can be used for CMOS transistors including MOSFET devices formed on a bulk substrate, and planar FET devices or 3-D MuGFET devices (e.g., FinFET devices) formed upon the oxide insulator of a SOI.

    摘要翻译： 示例性实施例提供了用于控制用于晶体管器件的双金属栅电极的功函数值的方法和结构。 具体地，PMOS和NMOS金属栅电极之一的功函数值可以通过沉积在栅介电材料上的堆叠层之间的反应来控制。 堆叠层可以包括第一含金属的材料，例如Al 2 O 3 N，和/或由包含第二金属的材料如TaN覆盖的AlN， TiN，WN，MoN或它们各自的金属。 堆叠层之间的反应可产生具有约4.35eV至约5.0eV范围内的期望功函数值的金属栅极材料。 公开的方法和结构可以用于包括形成在体衬底上的MOSFET器件的CMOS晶体管，以及形成在SOI的氧化物绝缘体上的平面FET器件或3-D MuGFET器件（例如，FinFET器件）。

    THIN FILM TRANSISTOR HAVING CHALCOGENIDE LAYER AND METHOD OF FABRICATING THE THIN FILM TRANSISTOR
    73.
    发明申请
    THIN FILM TRANSISTOR HAVING CHALCOGENIDE LAYER AND METHOD OF FABRICATING THE THIN FILM TRANSISTOR 审中-公开
    具有氯化铝层的薄膜晶体管和薄膜晶体管的制备方法

    公开(公告)号：US20080083924A1

    公开(公告)日：2008-04-10

    申请号：US11869175

    申请日：2007-10-09

    申请人： Kibong SONG ,  Doo-Hee CHO ,  Kyeongam KIM ,  Sang LEE

    发明人： Kibong SONG ,  Doo-Hee CHO ,  Kyeongam KIM ,  Sang LEE

    IPC分类号： H01L31/0272 ,  H01L21/12 ,  H01L29/04

    CPC分类号： H01L29/78681 ,  H01L29/78684 ,  H01L31/1136

    摘要： Provided are a thin film transistor (TFT) having a chalcogenide layer and a method of fabricating the TFT. The TFT includes an amorphous chalcogenide layer, a crystalline chalcogenide layer, source and drain electrodes, and a gate electrode. The amorphous chalcogenide layer forms a channel layer. The crystalline chalcogenide layer is formed on both sides of the amorphous layer to form source and drain regions. The source and drain electrodes are formed on both sides of the amorphous chalcogenide layer and connected to the source and drain regions of the crystalline chalcogenide layer, respectively. The gate electrode is formed above or under the channel layer with a gate insulation layer being interposed between the channel layer and the gate electrode. Therefore, the TFT can include an optical TFT structure using the chalcogenide layers as an optical conductive layer and/or an electric TFT providing diode rectification using the chalcogenide layers.

    摘要翻译： 提供了具有硫族化物层的薄膜晶体管（TFT）和制造TFT的方法。 TFT包括无定形硫族化物层，结晶硫族化物层，源极和漏极以及栅电极。 无定形硫族化物层形成通道层。 结晶硫族化物层形成在非晶层的两侧以形成源区和漏区。 源极和漏极分别形成在非晶态硫族化物层的两侧，并分别连接到结晶硫族化物层的源极和漏极区域。 栅电极形成在沟道层的上方或下方，栅极绝缘层插入沟道层和栅电极之间。 因此，TFT可以包括使用硫族化物层作为光导体层的光学TFT结构和/或使用硫族化物层提供二极管整流的电TFT。

    Semiconductor light emitting device
    75.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US5521396A

    公开(公告)日：1996-05-28

    申请号：US258681

    申请日：1994-06-13

    申请人： Yukio Shakuda

    发明人： Yukio Shakuda

    IPC分类号： C30B29/68 ,  H01L21/12 ,  H01L33/04 ,  H01L33/28 ,  H01L33/30 ,  H01L33/38 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/327 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072

    CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0087 ,  H01L33/04 ,  H01S5/0421 ,  H01S5/327

    摘要： In a light emitting device made of a group II-VI semiconductor of ZnCdSSe or MgZnCdSSe, to facilitate the movement of electrons or holes from a GaAs substrate to a group II-VI semiconductor film and to flow the current at a low voltage, a ZnSe--AlGaAs super lattice layer is formed between the group II-VI semiconductor film and the GaAs substrate so that the energy band from the substrate to the group II-VI semiconductor film rises in steps or gradually. In an device where an N-type semiconductor layer of the group II-VI semiconductor film is arranged on the side of the substrate, a P-type semiconductor film which raises the energy band from the electrode to the P-type semiconductor layer in steps is formed between the electrode and the P-type semiconductor layer which is the top layer of the group II-VI semiconductor film.

    摘要翻译： 在由ZnCdSSe或MgZnCdSSe的II-VI族半导体制成的发光器件中，为了促进电子或空穴从GaAs衬底移动到II-VI族半导体膜并使电流在低电压下流动，ZnSe 在II-VI族半导体膜和GaAs衬底之间形成AlGaAs超晶格层，使得从衬底到II-VI族II族半导体膜的能带逐步升高。 在基板一侧配置有II-VI族半导体膜的N型半导体层的器件中，将从电极向P型半导体层的能带上升的P型半导体膜 形成在电极和作为II-VI族半导体膜的顶层的P型半导体层之间。

    Disordered crystalline semiconductor
    76.
    发明授权
    Disordered crystalline semiconductor 失效
    无序晶体半导体

    公开(公告)号：US5372658A

    公开(公告)日：1994-12-13

    申请号：US39558

    申请日：1993-03-22

    申请人： Akio Sasaki ,  Susumu Noda

    发明人： Akio Sasaki ,  Susumu Noda

    IPC分类号： H01L29/201 ,  H01L21/20 ,  H01L21/203 ,  H01L33/06 ,  H01L33/16 ,  H01L33/30 ,  H01L33/34 ,  H01L21/12

    CPC分类号： B82Y20/00 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02584 ,  H01L21/0262 ,  H01L33/06 ,  Y10S438/925 ,  Y10S438/936

    摘要： A semiconductor material having a disordered structure consists of a semiconductor material on which epitaxial growth is possible. The semiconductor material has an energy band structure constituted by one of the indirect band structure, the direct band structure, and a combination of the indirect and the direct band structures, and consists of a plurality of semiconductor layers. The semiconductor layer is orderly arranged along its surface and disorderly arranged along its thickness direction with respect to at least one of the followings the number of atomic or molecular layers constituting the semiconductor layer, a composition of a specific molecular layer of the molecular layers, and impurity doped to the semiconductor layer.

    摘要翻译： 具有无序结构的半导体材料由其上可以进行外延生长的半导体材料组成。 半导体材料具有由间接带结构，直接带结构以及间接和直接带结构的组合构成的能带结构，并且由多个半导体层构成。 半导体层相对于构成半导体层的原子层或分子层的数量，分子层的特定分子层的组成以及以下的至少一个，沿其厚度方向排列顺序地排列顺序，以及 掺杂到半导体层的杂质。