System for the preferential removal of silicon oxide
    81.
    发明申请
    System for the preferential removal of silicon oxide 有权
    优先去除氧化硅的系统

    公开(公告)号:US20050072524A1

    公开(公告)日:2005-04-07

    申请号:US10660687

    申请日:2003-09-11

    摘要: A system, composition, and a method for planarizing or polishing a composite substrate are provided. The planarizing or polishing system comprises (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride 5 ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive. The present invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a system comprising (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive.

    摘要翻译: 提供了一种用于平面化或抛光复合衬底的系统,组合物和方法。 平版化或抛光系统包括(i)抛光组合物,其包含(a)约0.5wt。 5%以上的氟离子,(b)约1重量% %以上的胺,(c)约0.1重量% %或更多的碱,和(d)水,和(ii)研磨剂。 本发明还提供了一种平面化或抛光复合衬底的方法,包括使衬底与系统接触,该系统包括(i)抛光组合物,其包含(a)约0.5wt。 %以上的氟离子,(b)约1重量% %以上的胺,(c)约0.1重量% %或更多的碱,和(d)水,和(ii)研磨剂。

    Polishing system with stopping compound and method of its use
    82.
    发明授权
    Polishing system with stopping compound and method of its use 有权
    具有停车复合抛光系统及其使用方法

    公开(公告)号:US06855266B1

    公开(公告)日:2005-02-15

    申请号:US09636246

    申请日:2000-08-10

    IPC分类号: C09G1/02 H01L21/321 C09K13/00

    CPC分类号: H01L21/3212 C09G1/02

    摘要: The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, and (v) a polishing pad and/or an abrasive. The invention also provides a composition comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, to be used with (v) a polishing pad and/or an abrasive.

    摘要翻译: 本发明提供一种用于抛光多层基底的一层或多层的系统,其包括第一金属层和第二层,所述第二层包括(i)液体载体,(ii)至少一种氧化剂,(iii)至少一种 抛光添加剂,其增加系统抛光至少一层基材的速率,(iv)至少一种具有第一金属层的抛光选择性的停止化合物:至少约30:1的第二层,和(v )抛光垫和/或磨料。 本发明还提供一种组合物,其包含(i)液体载体,(ii)至少一种氧化剂,(iii)至少一种抛光添加剂(iv)至少一种具有第一金属层的抛光选择性的停止化合物:第二 至少约30:1的层,与(v)抛光垫和/或研磨剂一起使用。

    Polishing pad with oriented pore structure
    83.
    发明申请
    Polishing pad with oriented pore structure 有权
    具有取向孔结构的抛光垫

    公开(公告)号:US20040258882A1

    公开(公告)日:2004-12-23

    申请号:US10463730

    申请日:2003-06-17

    发明人: Abaneshwar Prasad

    IPC分类号: B32B001/00

    摘要: The invention provides a polishing pad for chemical-mechanical polishing comprising a body, a polishing surface, and a plurality of elongated pores, wherein about 10% or more of the elongated pores have an aspect ratio of about 2:1 or greater and are substantially oriented in a direction that is coplanar with the polishing surface. The invention further provides a method of polishing a substrate.

    摘要翻译: 本发明提供了一种用于化学机械抛光的抛光垫,其包括主体,抛光表面和多个细长孔,其中约10%或更多的细长孔具有约2:1或更大的纵横比,并且基本上 在与抛光表面共面的方向上取向。 本发明还提供一种抛光衬底的方法。

    Particle processing apparatus and methods
    84.
    发明申请
    Particle processing apparatus and methods 失效
    粒子处理装置及方法

    公开(公告)号:US20040238753A1

    公开(公告)日:2004-12-02

    申请号:US10829841

    申请日:2004-04-22

    发明人: David G. Mikolas

    IPC分类号: G01N023/00

    摘要: This invention relates to an apparatus for processing particles. The apparatus comprises a particle source having an exist aperture; an extraction electrode located at the exist aperture; an acceleration electrode adjacent to the extraction electrode; a processing compartment adjacent to the acceleration electrode; and a deceleration electrode located adjacent to the processing compartment. The invention also relates to methods of processing particles and to particles processed by the apparatus and methods of the invention.

    摘要翻译: 本发明涉及一种处理颗粒的装置。 该装置包括具有存在孔径的颗粒源; 位于存在的孔的引出电极; 与提取电极相邻的加速电极; 与加速电极相邻的加工室; 以及位于处理室附近的减速电极。 本发明还涉及处理颗粒和通过本发明的装置和方法处理的颗粒的方法。

    Coated metal oxide particles for CMP
    86.
    发明申请
    Coated metal oxide particles for CMP 有权
    用于CMP的涂覆金属氧化物颗粒

    公开(公告)号:US20040209555A1

    公开(公告)日:2004-10-21

    申请号:US10419580

    申请日:2003-04-21

    IPC分类号: B24B001/00

    摘要: The invention provides a method of polishing a substrate, which method comprises the steps of (i) providing a polishing composition, (ii) providing a substrate comprising at least one metal layer, and (iii) abrading at least a portion of the metal layer with the polishing composition to polish the substrate. The polishing composition comprises an abrasive and a liquid carrier, wherein the abrasive comprises metal oxide particles having a surface with a silane compound adhered to a portion thereof and a polymer adhered to the silane compound and wherein the polymer is selected from the group consisting of water-soluble polymers and water-emulsifiable polymers. The invention also provides a polishing composition as described above, wherein the total amount of abrasive particles present in the polishing composition is no greater than about 20% by weight of the polishing composition, and the metal oxide particles do not comprise zirconia.

    摘要翻译: 本发明提供一种抛光衬底的方法,该方法包括以下步骤:(i)提供抛光组合物,(ii)提供包括至少一个金属层的衬底,和(iii)研磨金属层的至少一部分 用抛光组合物抛光底物。 抛光组合物包括研磨剂和液体载体,其中磨料包含金属氧化物颗粒,其表面具有粘附到其一部分上的硅烷化合物,和聚合物粘附到硅烷化合物上,并且其中聚合物选自水 可溶性聚合物和水可乳化聚合物。 本发明还提供了如上所述的抛光组合物,其中存在于抛光组合物中的磨料颗粒的总量不大于抛光组合物的约20重量%,并且金属氧化物颗粒不包含氧化锆。

    Electron source and method for making same
    87.
    发明申请
    Electron source and method for making same 审中-公开
    电子源及其制造方法

    公开(公告)号:US20040198892A1

    公开(公告)日:2004-10-07

    申请号:US10814714

    申请日:2004-03-31

    CPC分类号: C08K3/04

    摘要: A field emitter source and method for making same. An x-ray and a high energy electron source is fabricated from the field emitter. The field emitter source composition comprises carbon black and a mixing medium. An alternative method of field emitter formulation includes providing a quantity of silica with the carbon black and a mixing medium. An x-ray source comprises a substrate and a carbon black field emitter composition provided along a surface of the substrate and an extraction grid to pull electrons from the field emitter film and a metal film biased at high voltage to accelerate the electrons. A conductive film is further provided along an upper support structure of the source, such that when the conductive film is struck by the accelerated electrons, the upper support structure converts the impinging high-energy electrons into x-rays. A high energy electron source is also disclosed similar to the x-ray source but without a conductive film and with appropriate apertures to facilitate egress of the high energy electrons.

    摘要翻译: 场致发射源及其制作方法。 x射线和高能电子源由场发射器制造。 场致发射源组合物包含炭黑和混合介质。 场发射体配方的另一种方法包括提供一定量的二氧化硅与炭黑和混合介质。 x射线源包括沿着衬底的表面设置的衬底和炭黑场发射器组合物,以及用于从场致发射膜拉电子的提取栅极和以高电压偏置的金属膜以加速电子。 沿着源的上支撑结构进一步提供导电膜,使得当导电膜被加速的电子撞击时,上支撑结构将入射的高能电子转换为x射线。 类似于X射线源,也没有导电膜,并且具有合适的孔以便于高能电子的出口,也公开了高能电子源。

    Boron-containing polishing system and method
    88.
    发明申请
    Boron-containing polishing system and method 失效
    含硼抛光系统及方法

    公开(公告)号:US20040180612A1

    公开(公告)日:2004-09-16

    申请号:US10801316

    申请日:2004-03-16

    IPC分类号: B24B001/00 B24B007/19

    摘要: The invention provides a chemical-mechanical polishing system comprising an abrasive, a carrier, and either boric acid, or a conjugate base thereof, wherein the boric acid and conjugate base are not present together in the polishing system in a sufficient amount to act as a pH buffer, or a water-soluble boron-containing compound, or salt thereof, that is not boric acid, and a method of polishing a substrate using the chemical-mechanical polishing system.

    摘要翻译: 本发明提供了一种化学机械抛光系统,其包括研磨剂,载体和硼酸或其共轭碱,其中硼酸和共轭碱在抛光体系中不以一定的量存在于抛光体系中 pH缓冲液或不是硼酸的水溶性含硼化合物或其盐,以及使用化学机械抛光系统抛光基材的方法。

    Microporous polishing pads
    89.
    发明申请
    Microporous polishing pads 有权
    微孔抛光垫

    公开(公告)号:US20040177563A1

    公开(公告)日:2004-09-16

    申请号:US10792344

    申请日:2004-03-03

    发明人: Abaneshwar Prasad

    IPC分类号: C09K003/14

    摘要: The invention provides polishing pads for chemical-mechanical polishing comprising a porous foam and a method for their production. In one embodiment, the porous foam has an average pore size of about 50 nullm or less, wherein about 75% or more of the pores have a pore size within about 20 nullm or less of the average pore size. In another embodiment, porous foam has an average pore size of about 20 nullm or less. In yet another embodiment, the porous foam has a multi-modal pore size distribution. The method of production comprises (a) combining a polymer resin with a supercritical gas to produce a single-phase solution and (b) forming a polishing pad from the single-phase solution, wherein the supercritical gas is generated by subjecting a gas to an elevated temperature and pressure.

    摘要翻译: 本发明提供了包括多孔泡沫的化学机械抛光用抛光垫及其制造方法。 在一个实施方案中,多孔泡沫的平均孔径为约50μm或更小,其中约75%或更多的孔具有平均孔径的约20μm或更小的孔径。 在另一个实施方案中,多孔泡沫的平均孔径为约20μm或更小。 在另一个实施方案中,多孔泡沫具有多模式孔径分布。 生产方法包括:(a)将聚合物树脂与超临界气体组合以产生单相溶液,和(b)从单相溶液形成抛光垫,其中超临界气体是通过使气体经由 升高的温度和压力。

    Method of polishing a lanthanide substrate
    90.
    发明申请
    Method of polishing a lanthanide substrate 失效
    镧系元素抛光方法

    公开(公告)号:US20040175949A1

    公开(公告)日:2004-09-09

    申请号:US10382370

    申请日:2003-03-06

    摘要: The invention provides a method of polishing a substrate comprising a lanthanide-containing metal oxide material. The method comprises the steps of (i) providing a polishing system comprising (a) an abrasive, a polishing pad, or a combination thereof, (b) an acid, and (c) a liquid carrier, (ii) providing a substrate comprising a metal oxide layer, wherein the metal oxide layer comprises at least one lanthanide series element, and (iii) abrading at least a portion of the metal oxide layer with the polishing system to polish the substrate. The lanthanide-containing metal oxide material can be a lanthanide oxide, a doped lanthanide oxide, a lanthanide-doped metal oxide, a lanthanide perovskite, or any other suitable lanthanide-containing mixed metal oxide material, in particular those used as solid electrode and solid electrolyte materials in gas sensor and fuel cell devices.

    摘要翻译: 本发明提供了一种抛光包含含镧系元素的金属氧化物材料的基材的方法。 该方法包括以下步骤:(i)提供抛光系统,其包括(a)研磨剂,抛光垫或其组合,(b)酸,和(c)液体载体,(ii)提供包含 金属氧化物层,其中所述金属氧化物层包含至少一种镧系元素,和(iii)用所述抛光系统研磨所述金属氧化物层的至少一部分以抛光所述衬底。 含镧系元素的金属氧化物材料可以是镧系元素氧化物,掺杂的镧系元素氧化物,镧系元素掺杂的金属氧化物,镧系元素钙钛矿或任何其它合适的含镧系元素的混合金属氧化物材料,特别是用作固体电极和固体 气体传感器和燃料电池装置中的电解质材料。