Charged Particle Beam Device and Sample Observation Method
    81.
    发明申请
    Charged Particle Beam Device and Sample Observation Method 有权
    带电粒子束装置和样品观察方法

    公开(公告)号:US20130146765A1

    公开(公告)日:2013-06-13

    申请号:US13817644

    申请日:2011-08-02

    IPC分类号: H01J37/26

    摘要: Provided is a charged particle beam device that outputs both an ion beam and an electron beam at a sample, has a common detector for both the ion beam and the electron beam in the charged particle beam device that processes and observes the sample, and is able to provide a detection unit to an appropriate position corresponding to the process details and observation technique of the sample. Provided are an electron beam optical column in which an electron beam for observing the observation surface of a sample is generated, an ion beam optical column in which an ion beam that processes the sample is generated, a detection device that detects a secondary signal generated from the sample or transmitted electrons, and a sample stage that is capable of mounting the detection device thereon; is rotatable in a horizontal plane that includes the optical axis of the electron beam and the optical axis of the ion beam about a cross point where both optical axes intersect; and is able to change the distance between the observation surface of the sample and the cross point.

    摘要翻译: 提供了一种在样品输出离子束和电子束的带电粒子束装置,在处理和观察样品的带电粒子束装置中具有用于离子束和电子束两者的公共检测器,并且能够 以将检测单元提供到对应于样品的处理细节和观察技术的适当位置。 提供了一种电子束光学柱,其中产生用于观察样品观察表面的电子束,产生处理样品的离子束的离子束光学柱,检测装置,其检测从 样品或透射电子,以及能够在其上安装检测装置的样品台; 可以在包括电子束的光轴和离子束的光轴的水平面中绕两个光轴相交的交叉点旋转; 并且能够改变样品的观察表面与交叉点之间的距离。

    Electron beam device and electron beam application device using the same
    82.
    发明授权
    Electron beam device and electron beam application device using the same 有权
    电子束装置和使用其的电子束施加装置

    公开(公告)号:US08450699B2

    公开(公告)日:2013-05-28

    申请号:US13133947

    申请日:2009-12-04

    IPC分类号: G21K7/00 B01J19/08 H01J9/04

    摘要: To obtain a SEM capable of both providing high resolution at low acceleration voltage and allowing high-speed elemental distribution measurement, a SE electron source including Zr—O as a diffusion source is shaped so that the radius r of curvature of the tip is more than 0.5 μm and less than 1 μm, and the cone angle α of a conical portion at a portion in the vicinity of the tip at a distance of 3r to 8r from the tip, is more than 5° and less than (8/r)°. Another SE electron source uses Ba—O and includes a barium diffusion supply means composed of a sintered metal and a barium diffusion source containing barium oxide.

    摘要翻译: 为了获得能够在低加速电压下提供高分辨率并允许高速元素分布测量的SEM,包括Zr-O作为扩散源的SE电子源被成形为使得尖端的曲率半径r大于 0.5μm以上且小于1μm,并且尖端附近尖端的距离尖端3r至8r的部分的锥形角α大于5°且小于(8 / r) °。 另一个SE电子源使用Ba-O,并且包括由烧结金属和含有氧化钡的钡扩散源组成的钡扩散供给装置。

    ION BEAM APPARATUS AND ION-BEAM PROCESSING METHOD
    83.
    发明申请
    ION BEAM APPARATUS AND ION-BEAM PROCESSING METHOD 有权
    离子束设备和离子束处理方法

    公开(公告)号:US20130032714A1

    公开(公告)日:2013-02-07

    申请号:US13641211

    申请日:2011-04-12

    IPC分类号: H01J37/02

    摘要: There is provided an apparatus and a method capable of preparing a standardized probe without need for working skill of probe processing. According to the present invention, a probe shape generation process of detecting a probe shape based on the probe incoming current detected by a probe current detection unit, a probe tip coordinate extraction process of detecting a tip position of the probe from the probe shape, a probe contour line extraction process of generating a probe contour line obtained by approximating a contour of the probe from the tip position of the probe and the probe shape, a probe center line extraction process of generating a center line and a vertical line of the probe from the probe contour line, a processing pattern generation process of generating a processing pattern based on the probe tip position, the probe center line, the probe vertical line, and a preset shape and dimension of a probe acute part, and an ion beam termination process of performing, based on the processing pattern, termination of ion-beam processing are performed.

    摘要翻译: 提供了一种能够准备标准化探针而不需要探头处理工作技能的装置和方法。 根据本发明,根据由探针电流检测单元检测到的探针入射电流来检测探针形状的探针形状生成处理,从探针形状检测探针的末端位置的探针尖端坐标提取处理, 探针轮廓线提取处理,其生成通过从探针的尖端位置和探针形状近似探针的轮廓而获得的探针轮廓线;探针中心线提取处理,用于产生探针的中心线和垂直线 探针轮廓线,基于探针尖端位置,探针中心线,探针垂直线以及探针尖锐部分的预设形状和尺寸产生处理图案的处理图案生成处理以及离子束终止处理 基于处理模式执行离子束处理的终止。

    GAS FIELD ION SOURCE, CHARGED PARTICLE MICROSCOPE, AND APPARATUS
    85.
    发明申请
    GAS FIELD ION SOURCE, CHARGED PARTICLE MICROSCOPE, AND APPARATUS 有权
    气体离子源,充电颗粒显微镜和装置

    公开(公告)号:US20120119086A1

    公开(公告)日:2012-05-17

    申请号:US13355104

    申请日:2012-01-20

    IPC分类号: H01J37/26

    摘要: A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

    摘要翻译: 一种气体离子源,其可以在粗吸真空中同时增加电导,并且从离子电流的增加的角度降低提取电极的孔直径。 气体离子源具有改变真空气体分子离子化室中的电导的机理。 也就是说,根据是否从气体分子离子化室抽出离子束,改变对气体分子离子化室进行抽真空的电导。 通过将盖子形成为构成用双金属合金改变电导的机构的部件的部分,可以根据气体分子离子化室的温度来改变电导率,例如,电导率变为相对较小的电导率 相对较低的温度和相对高的温度下的相对较大的电导率。

    METHOD AND APPARATUS FOR SPECIMEN FABRICATION
    87.
    发明申请
    METHOD AND APPARATUS FOR SPECIMEN FABRICATION 有权
    方法和装置用于样本制造

    公开(公告)号:US20110140006A1

    公开(公告)日:2011-06-16

    申请号:US13026568

    申请日:2011-02-14

    IPC分类号: G21K5/04

    摘要: A focused ion beam apparatus, including: a specimen transferring unit having a probe to which a micro-specimen extracted from a specimen, can be joined through a joining deposition film, for transferring the micro-specimen to a sample holder; and wherein, the specimen transferring unit holds the probe which is joined through the joining deposition film to the micro-specimen extracted from the specimen, and the sample stage moves so that the sample holder mounted on the holder clasp is provided into an irradiated range of the focused ion beam, and the specimen transferring unit approaches the probe to the sample holder, and the gas nozzle supplies the deposition gas so that the micro-specimen is fixed to the sample holder through a fixing deposition film, and the ion beam irradiating optical system irradiates the focused ion beam to the micro-specimen fixed to the sample holder for various procedures.

    摘要翻译: 一种聚焦离子束装置,其特征在于,包括:具有从样本中提取微量试样的探针的检体转印单元,能够通过接合沉积膜接合,将所述微观样品转印到样品保持体上; 并且其中,所述检体转印单元将通过所述接合沉积膜接合的所述探针保持在从所述检体提取的所述微量试样上,并且所述样品台移动,使得安装在所述保持器扣上的样品保持器被设置在 聚焦离子束和样品转印单元接近探针到样品保持器,并且气体喷嘴提供沉积气体,使得微量样品通过定影沉积膜固定到样品保持器,并且离子束照射光学 系统将聚焦的离子束照射到固定到样品保持器上的微量样品用于各种程序。

    ION BEAM PROCESSING APPARATUS
    88.
    发明申请
    ION BEAM PROCESSING APPARATUS 有权
    离子束加工装置

    公开(公告)号:US20100176297A1

    公开(公告)日:2010-07-15

    申请号:US12731910

    申请日:2010-03-25

    IPC分类号: H01J37/26 G01N23/22

    摘要: An ion beam processing apparatus includes an ion beam irradiation optical system that irradiate a rectangular ion beam to a sample held on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage on which a test piece, extracted from the sample by a probe, is mounted. An angle of irradiation of the ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction.

    摘要翻译: 一种离子束处理装置,包括:将矩形离子束照射到保持在第一样品台上的样品的离子束照射光学系统,向样品照射电子束的电子束照射光学系统;以及第二样品台, 通过探针从样品中提取的试片被安装。 离子束的照射角度可以通过使第二样品台围绕倾斜轴旋转来倾斜。 控制器控制表示矩形离子束在与第二样品台的倾斜轴投射到第二样品台表面上的第一方向垂直的方向上的强度分布的偏斜宽度,使得宽度将 小于在平行于第一方向的方向上表示离子束的另一边缘的强度分布的偏斜宽度。