摘要:
Provided is a charged particle beam device that outputs both an ion beam and an electron beam at a sample, has a common detector for both the ion beam and the electron beam in the charged particle beam device that processes and observes the sample, and is able to provide a detection unit to an appropriate position corresponding to the process details and observation technique of the sample. Provided are an electron beam optical column in which an electron beam for observing the observation surface of a sample is generated, an ion beam optical column in which an ion beam that processes the sample is generated, a detection device that detects a secondary signal generated from the sample or transmitted electrons, and a sample stage that is capable of mounting the detection device thereon; is rotatable in a horizontal plane that includes the optical axis of the electron beam and the optical axis of the ion beam about a cross point where both optical axes intersect; and is able to change the distance between the observation surface of the sample and the cross point.
摘要:
To obtain a SEM capable of both providing high resolution at low acceleration voltage and allowing high-speed elemental distribution measurement, a SE electron source including Zr—O as a diffusion source is shaped so that the radius r of curvature of the tip is more than 0.5 μm and less than 1 μm, and the cone angle α of a conical portion at a portion in the vicinity of the tip at a distance of 3r to 8r from the tip, is more than 5° and less than (8/r)°. Another SE electron source uses Ba—O and includes a barium diffusion supply means composed of a sintered metal and a barium diffusion source containing barium oxide.
摘要:
There is provided an apparatus and a method capable of preparing a standardized probe without need for working skill of probe processing. According to the present invention, a probe shape generation process of detecting a probe shape based on the probe incoming current detected by a probe current detection unit, a probe tip coordinate extraction process of detecting a tip position of the probe from the probe shape, a probe contour line extraction process of generating a probe contour line obtained by approximating a contour of the probe from the tip position of the probe and the probe shape, a probe center line extraction process of generating a center line and a vertical line of the probe from the probe contour line, a processing pattern generation process of generating a processing pattern based on the probe tip position, the probe center line, the probe vertical line, and a preset shape and dimension of a probe acute part, and an ion beam termination process of performing, based on the processing pattern, termination of ion-beam processing are performed.
摘要:
An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
摘要:
A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.
摘要:
An ion beam machining system which performs a predetermined machining of a sample by irradiating the sample with an ion beam includes a beam spot former which forms a beam spot shape of the ion beam to be non-axially symmetric in a perpendicular plane with respect to an irradiation axis of the ion beam, and an axis orientator which orients one axis of the beam spot at the ion beam irradiation position on the sample in a predetermined direction.
摘要:
A focused ion beam apparatus, including: a specimen transferring unit having a probe to which a micro-specimen extracted from a specimen, can be joined through a joining deposition film, for transferring the micro-specimen to a sample holder; and wherein, the specimen transferring unit holds the probe which is joined through the joining deposition film to the micro-specimen extracted from the specimen, and the sample stage moves so that the sample holder mounted on the holder clasp is provided into an irradiated range of the focused ion beam, and the specimen transferring unit approaches the probe to the sample holder, and the gas nozzle supplies the deposition gas so that the micro-specimen is fixed to the sample holder through a fixing deposition film, and the ion beam irradiating optical system irradiates the focused ion beam to the micro-specimen fixed to the sample holder for various procedures.
摘要:
An ion beam processing apparatus includes an ion beam irradiation optical system that irradiate a rectangular ion beam to a sample held on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage on which a test piece, extracted from the sample by a probe, is mounted. An angle of irradiation of the ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction.
摘要:
An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder a gas tube, a gas volume control valve, and a stop valve.
摘要:
An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.