公开(公告)号：US11676952B2

公开(公告)日：2023-06-13

申请号：US17225731

申请日：2021-04-08

Applicant: Apple Inc.

Inventor： Andreas Bibl ,  Charles R. Griggs

IPC: H01L25/16 ,  H01L33/44 ,  H01L33/08 ,  H01L33/52 ,  H01L33/60 ,  H01L27/02 ,  H01L23/00 ,  H01L25/075 ,  H01L27/12 ,  H01L33/20 ,  H01L33/48 ,  H01L33/06 ,  H01L33/30 ,  H01L33/62 ,  H01L33/00 ,  H01L33/54 ,  H01L33/56

CPC classification number: H01L25/167 ,  H01L24/95 ,  H01L25/0753 ,  H01L25/165 ,  H01L27/0203 ,  H01L27/124 ,  H01L27/1244 ,  H01L33/0008 ,  H01L33/06 ,  H01L33/08 ,  H01L33/20 ,  H01L33/30 ,  H01L33/44 ,  H01L33/486 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2933/005 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/12044 ,  H01L2924/00

Abstract: Light emitting devices and methods of integrating micro LED devices into light emitting device are described. In an embodiment a light emitting device includes a reflective bank structure within a bank layer, and a conductive line atop the bank layer and elevated above the reflective bank structure. A micro LED device is within the reflective bank structure and a passivation layer is over the bank layer and laterally around the micro LED device within the reflective bank structure. A portion of the micro LED device and a conductive line atop the bank layer protrude above a top surface of the passivation layer.

公开(公告)号：US20220013688A1

公开(公告)日：2022-01-13

申请号：US17388949

申请日：2021-07-29

Applicant: Apple Inc.

Inventor： Kelly McGroddy ,  Hsin-Hua Hu ,  Andreas Bibl ,  Clayton Ka Tsun Chan ,  Daniel Arthur Haeger

IPC: H01L33/14 ,  H01L23/00 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01L27/01 ,  H01L33/06 ,  H01L33/30 ,  H01L33/42

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

公开(公告)号：US20210265330A1

公开(公告)日：2021-08-26

申请号：US17180076

申请日：2021-02-19

Applicant: Apple Inc.

Inventor： Andreas Bibl ,  Kapil V. Sakariya ,  Vikram Pavate

IPC: H01L25/16 ,  G06F3/041 ,  G06F3/042 ,  G06F1/16 ,  G09G3/32 ,  H01L25/075 ,  G04G9/10 ,  H01L23/29 ,  H01L23/31 ,  H01L23/538 ,  H01L31/0216 ,  H01L31/16 ,  H01L33/44 ,  H01L33/62

Abstract: A display module and system applications including a display module are described. The display module may include a display substrate including a front surface, a back surface, and a display area on the front surface. A plurality of interconnects extend through the display substrate from the front surface to the back surface. An array of light emitting diodes (LEDs) are in the display area and electrically connected with the plurality of interconnects, and one or more driver circuits are on the back surface of the display substrate. Exemplary system applications include wearable, rollable, and foldable displays.

公开(公告)号：US11101405B2

公开(公告)日：2021-08-24

申请号：US16783737

申请日：2020-02-06

Applicant: Apple Inc.

Inventor： Kelly McGroddy ,  Hsin-Hua Hu ,  Andreas Bibl ,  Clayton Ka Tsun Chan ,  Daniel Arthur Haeger

IPC: H01L33/14 ,  H01L23/00 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01L27/01 ,  H01L33/06 ,  H01L33/30 ,  H01L33/42 ,  G09G3/32 ,  H01L33/16 ,  H01L33/20

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

公开(公告)号：US11011390B2

公开(公告)日：2021-05-18

申请号：US16545921

申请日：2019-08-20

Applicant: Apple Inc.

Inventor： Hsin-Hua Hu ,  Andreas Bibl ,  John A. Higginson

IPC: H01L21/52 ,  H01L25/075 ,  H01L27/15 ,  H01L23/00 ,  H01L33/00 ,  H01L21/683 ,  H01L25/00 ,  H01L33/40

Abstract: A method and structure for stabilizing an array of micro devices is disclosed. The array of micro devices is formed on an array of stabilization posts formed from a thermoset material. Each micro device includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.

公开(公告)号：US20210050337A1

公开(公告)日：2021-02-18

申请号：US17072240

申请日：2020-10-16

Applicant: Apple Inc.

Inventor： John A. Higginson ,  Andreas Bibl ,  Hsin-Hua Hu

IPC: H01L25/16 ,  H01L33/44 ,  H01L23/31 ,  H01L33/06 ,  H01L33/00 ,  H01L33/42 ,  H01L33/62 ,  H01L25/075 ,  H01L27/12 ,  H01L25/00 ,  H01L33/54

Abstract: A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a passivation layer covering a conductive layer on the receiving substrate, and the passivation layer is hardened. In an embodiment the micro LED device is punched-through a B-staged thermoset material. In an embodiment the micro LED device is punched-through a thermoplastic material.

公开(公告)号：US20200312824A1

公开(公告)日：2020-10-01

申请号：US16860757

申请日：2020-04-28

Applicant: Apple Inc.

Inventor： Jonathan S. Steckel ,  Jean-Jacques P. Drolet ,  Roland Van Gelder ,  Kelly C. McGroddy ,  Ion Bita ,  James Michael Perkins ,  Andreas Bibl ,  Sajjad A. Khan ,  James E. Pedder ,  Elmar Gehlen

IPC: H01L25/075 ,  G02F1/13357 ,  H01L33/60

Abstract: Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.

公开(公告)号：US20200219840A1

公开(公告)日：2020-07-09

申请号：US16809386

申请日：2020-03-04

Applicant: Apple Inc.

Inventor： Andreas Bibl ,  John A. Higginson ,  Hung-Fai Stephen Law ,  Hsin-Hua Hu

IPC: H01L23/00 ,  H01L33/62 ,  H01L29/167 ,  H01L25/075 ,  B32B38/18 ,  H01L21/67

Abstract: A method of transferring a micro device and an array of micro devices are disclosed. A carrier substrate carrying a micro device connected to a bonding layer is heated to a temperature below a liquidus temperature of the bonding layer, and a transfer head is heated to a temperature above the liquidus temperature of the bonding layer. Upon contacting the micro device with the transfer head, the heat from the transfer head transfers into the bonding layer to at least partially melt the bonding layer. A voltage applied to the transfer head creates a grip force which picks up the micro device from the carrier substrate.

公开(公告)号：US10607961B2

公开(公告)日：2020-03-31

申请号：US16117414

申请日：2018-08-30

Applicant: Apple Inc.

Inventor： Andreas Bibl ,  John A. Higginson ,  Hung-Fai Stephen Law ,  Hsin-Hua Hu

IPC: H01L23/00 ,  H01L33/62 ,  H01L29/167 ,  H01L25/075 ,  B32B38/18 ,  H01L21/67

Abstract: A method of transferring a micro device and an array of micro devices are disclosed. A carrier substrate carrying a micro device connected to a bonding layer is heated to a temperature below a liquidus temperature of the bonding layer, and a transfer head is heated to a temperature above the liquidus temperature of the bonding layer. Upon contacting the micro device with the transfer head, the heat from the transfer head transfers into the bonding layer to at least partially melt the bonding layer. A voltage applied to the transfer head creates a grip force which picks up the micro device from the carrier substrate.

公开(公告)号：US10380952B2

公开(公告)日：2019-08-13

申请号：US15908499

申请日：2018-02-28

Applicant: Apple Inc.

Inventor： Kapil V. Sakariya ,  Andreas Bibl ,  Kelly McGroddy

IPC: G09G3/34 ,  G09G3/3233 ,  H01L25/075 ,  H01L25/16 ,  G09G3/3266 ,  G09G3/3216 ,  G09G3/20 ,  G09G3/32

Abstract: A light emitting assembly is described. In one embodiment, one or more light emitting diode (LED) devices and one or more microcontrollers are bonded to a same side of a substrate, with the one or more microcontrollers to switch and drive the one or more LED devices.