公开(公告)号：US06287990B1

公开(公告)日：2001-09-11

申请号：US09162915

申请日：1998-09-29

Applicant: David Cheung ,  Wai-Fan Yau ,  Robert R. Mandal

Inventor： David Cheung ,  Wai-Fan Yau ,  Robert R. Mandal

IPC: C23C16505

CPC classification number: H01L21/76832 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76835 ,  H01L2221/1031

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.

Abstract translation: 一种用于通过有机硅烷或有机硅氧烷化合物和氧化性气体以10-250W的低RF功率水平反应沉积低介电常数膜的方法和装置。氧化的有机硅烷或有机硅氧烷膜具有良好的阻挡性能，用作衬垫 或盖层邻近其它电介质层。 氧化的有机硅烷或有机硅氧烷膜也可用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10至200W的RF功率水平或约20至250的RF功率水平反应来制备 W占用周期的10-30％。

公开(公告)号：US06245690B1

公开(公告)日：2001-06-12

申请号：US09187460

申请日：1998-11-04

Applicant: Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

Inventor： Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

IPC: C23C1640

CPC classification number: H01L21/02211 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3125 ,  H01L21/31633 ,  H01L21/76807

Abstract: A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

Abstract translation: 用于沉积低介电常数膜的方法和装置包括沉积氧化硅基膜，优选通过有机硅化合物和氧化气体以约10W至约500W的低RF功率水平反应，暴露基于氧化硅的 膜与水或疏水赋予性表面活性剂如六甲基二硅氮烷，并在升高的温度下固化氧化硅基膜。 可以在单独的微波室中增加氧化气体的离解，以有助于控制沉积膜的碳含量。 氧化硅系膜的耐湿性提高。

公开(公告)号：US06209484B1

公开(公告)日：2001-04-03

申请号：US09551021

申请日：2000-04-17

Applicant: Judy H. Huang ,  Wai-Fan Yau ,  David Cheung ,  Chan-Lon Yang

Inventor： Judy H. Huang ,  Wai-Fan Yau ,  David Cheung ,  Chan-Lon Yang

IPC: C23C1600

CPC classification number: C23C16/308 ,  C23C16/345 ,  C23C16/52 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76829

Abstract: A method and apparatus for depositing an etch stop layer. The method begins by introducing process gases into a processing chamber in which a substrate is disposed. An etch stop layer is then deposited over the substrate. An overlying layer is then deposited over the etch stop layer. The etch stop layer substantially protects underlying materials from the etchants used in patterning the overlying layer. Moreover, the etch stop layer also possesses advantageous optical characteristics, making it suitable for use as an antireflective coating in the patterning of layers underlying the etch stop layer.

Abstract translation: 一种沉积蚀刻停止层的方法和装置。 该方法开始于将工艺气体引入其中设置衬底的处理室中。 然后在衬底上沉积蚀刻停止层。 然后将上覆层沉积在蚀刻停止层上。 蚀刻停止层基本上保护用于图案化上覆层的蚀刻剂的下层材料。 此外，蚀刻停止层还具有有利的光学特性，使其适合用作在蚀刻停止层下面的图案图案中的抗反射涂层。

公开(公告)号：US06194628B1

公开(公告)日：2001-02-27

申请号：US08533174

申请日：1995-09-25

Applicant: Ben Pang ,  David Cheung ,  William N. Taylor, Jr. ,  Sebastien Raoux ,  Mark Fodor

Inventor： Ben Pang ,  David Cheung ,  William N. Taylor, Jr. ,  Sebastien Raoux ,  Mark Fodor

IPC: B09B300

CPC classification number: H01J37/32862 ,  B01J19/249 ,  B01J2219/2453 ,  B01J2219/2458 ,  B01J2219/2461 ,  B01J2219/2467 ,  B01J2219/247 ,  B01J2219/2474 ,  B01J2219/2475 ,  B01J2219/2487 ,  B01J2219/2493 ,  B01J2219/2496 ,  C23C16/4405 ,  C23C16/4412 ,  Y02C20/30 ,  Y02P70/605

Abstract: An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.

Abstract translation: 一种用于防止半导体处理装置的真空排气管线内的颗粒物质和残渣积聚的装置。 该装置使用RF能量来形成从半导体处理室排出的颗粒物质的成分进入等离子体状态，使得这些组分反应以形成可被泵送通过真空管线的气态产物。 该装置可以包括收集室，该收集室被构造和布置成收集流过该装置的颗粒物质并且阻止颗粒物质从该装置中流出。 该装置还可以包括静电收集器以增强收集室中的颗粒收集并进一步抑制颗粒物质的排出。

公开(公告)号：US6072227A

公开(公告)日：2000-06-06

申请号：US114682

申请日：1998-07-13

Applicant: Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

Inventor： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

IPC: C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L23/58

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas at a low RF power level from 20-200 W. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH.sub.3 SiH.sub.3, and nitrous oxide, N.sub.2 O, at a pulsed RF power level from 50-200 W during 10-30% of the duty cycle.

Abstract translation: 一种通过有机硅烷化合物和氧化气体在20-200W的低RF功率水平下反应沉积低介电常数膜的方法和装置。氧化的有机硅烷膜具有优异的阻挡性能，用作衬垫或盖 层相邻的其它电介质层。 氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。 优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3和一氧化二氮N 2 O在占空比的10-30％期间以50-200W的脉冲RF功率水平反应来制备。

公开(公告)号：US5908672A

公开(公告)日：1999-06-01

申请号：US950923

申请日：1997-10-15

Applicant: Choon Kun Ryu ,  Judy H. Huang ,  David Cheung

Inventor： Choon Kun Ryu ,  Judy H. Huang ,  David Cheung

IPC: C23C16/34 ,  C23C16/40 ,  H01L21/3105 ,  H01L21/316

CPC classification number: H01L21/02131 ,  C23C16/345 ,  C23C16/401 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31051 ,  H01L21/31629 ,  Y10S438/958

Abstract: A planarized passivation layer is described. A planarized passivation layer of the present invention preferably includes a fluorosilicate glass (FSG) layer and a silicon nitride layer. The FSG layer is preferably deposited using triethoxyfluorosilane (TEFS) and tetraethoxyorthosilicate (TEOS). The inclusion of fluorine in the process chemistry provides good gap-fill characteristics in the film thus formed. The TEFS-based process employed by the present invention employs a low deposition rate, on the order of less than about 4500 .ANG./min, and preferably above 3000 .ANG./min, when depositing the FSG layer. The use of low deposition rate results in a positively sloped profile, preventing the formation of voids during the deposition of the FSG layer and the silicon nitride layer.

Abstract translation: 描述了平坦化的钝化层。 本发明的平坦化钝化层优选包括氟硅酸盐玻璃（FSG）层和氮化硅层。 FSG层优选使用三乙氧基氟硅烷（TEFS）和原硅酸四乙酯（TEOS）沉积。 在工艺化学中包含氟在由此形成的膜中提供良好的间隙填充特性。 当沉积FSG层时，本发明采用的基于TEFS的方法使用低沉积速率，小于约4500安培/分钟，优选高于3000安培/分钟。 使用低沉积速率导致正倾斜的轮廓，防止在沉积FSG层和氮化硅层期间形成空隙。

公开(公告)号：US5158644A

公开(公告)日：1992-10-27

申请号：US777423

申请日：1991-10-10

Applicant: David Cheung ,  Peter Keswick ,  Jerry Wong

Inventor： David Cheung ,  Peter Keswick ,  Jerry Wong

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/54 ,  H01L21/00 ,  H01L21/314 ,  H01L21/316

CPC classification number: C23C16/45565 ,  C23C16/402 ,  C23C16/44 ,  C23C16/4405 ,  C23C16/455 ,  C23C16/45521 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32862 ,  H01L21/31604 ,  H01L21/67069 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S438/905

Abstract: A reactor chamber self-cleaning process is disclosed which uses a fluorocarbon-containing gas and, preferably, C.sub.2 F.sub.6 in combination with oxygen. The two-step process involves, first, a chamber-wide etch at relatively low pressure and with relatively large separation between the gas inlet manifold and the wafer supports which are the RF electrodes and, second, a local etch step which uses a relatively high chamber pressure and smaller electrode spacing, to complete the cleaning of the RF electrodes.

Abstract translation: 公开了一种反应室自清洁方法，其使用含碳氟化合物的气体，优选地，C2F6与氧气组合。 两步法首先涉及在相对较低的压力下进行腔室蚀刻，并且在气体入口歧管和作为RF电极的晶片支架之间具有相当大的间隔，其次，使用相对较高的局部蚀刻步骤 室压力和较小的电极间距，以完成RF电极的清洁。

公开(公告)号：USD308510S

公开(公告)日：1990-06-12

申请号：US108032

申请日：1987-10-14

Applicant: David Cheung

Designer： David Cheung

公开(公告)号：US20200306586A1

公开(公告)日：2020-10-01

申请号：US16371843

申请日：2019-04-01

Applicant: David Cheung

Inventor： David Cheung

IPC: A63B24/00 ,  A63B57/40 ,  A63B57/30 ,  H04N5/225 ,  H04N5/232 ,  H04N7/18

Abstract: In some embodiments, the present invention is directed to a golf green camera system comprising a pole having a first end and an opposite second end, a ferrule on the first end of the pole and configured to be inserted into a golf cup and a camera attached to the opposite second end of the pole. The golf cup is configured to be positioned within a corresponding opening in the golf green. The camera records play at the golf green. In some embodiments, the camera comprises a 360-degree camera.

公开(公告)号：US09270566B2

公开(公告)日：2016-02-23

申请号：US13584534

申请日：2012-08-13

Applicant: Bing Wang ,  David Cheung

Inventor： Bing Wang ,  David Cheung

IPC: G01R31/08 ,  H04L12/26 ,  H04L29/06 ,  H04L12/803 ,  H04L29/08

CPC classification number: H04L43/0894 ,  H04L43/026 ,  H04L43/12 ,  H04L47/125 ,  H04L63/1408 ,  H04L67/1014

Abstract: Embodiments described herein discuss an approach to implementing load-balancing across multiple monitoring servers. One such embodiment describes a network monitoring device. The network monitoring device includes an ingress port, for receiving mirrored network packets, and a number of egress ports. The egress ports are associated with a number of monitoring servers, and used to forward the mirrored network packets to the monitoring servers. A packet classifier, coupled to the ingress port, examines the mirrored network packets, and determines which of the monitoring servers should receive the packets.

Abstract translation: 本文描述的实施例讨论了跨多个监控服务器实现负载平衡的方法。 一个这样的实施例描述了网络监视设备。 网络监控设备包括入口端口，用于接收镜像网络报文，以及多个出口端口。 出口端口与多个监控服务器相关联，用于将镜像网络数据包转发到监控服务器。 耦合到入口端口的数据包分类器检查镜像网络数据包，并确定哪些监视服务器应该接收数据包。