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260 条记录 (耗时 0.032 秒)

    Multiple seal ring structure
    81.
    发明授权
    Multiple seal ring structure 有权
    多重密封圈结构

    公开(公告)号：US08338917B2

    公开(公告)日：2012-12-25

    申请号：US12938272

    申请日：2010-11-02

    申请人： Dun-Nian Yaung ,  Jen-Cheng Liu ,  Jeng-Shyan Lin ,  Wen-De Wang ,  Shu-Ting Tsai

    发明人： Dun-Nian Yaung ,  Jen-Cheng Liu ,  Jeng-Shyan Lin ,  Wen-De Wang ,  Shu-Ting Tsai

    IPC分类号： H01L23/02 ,  H01L21/71

    CPC分类号： H01L21/78 ,  H01L23/3157 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/00

    摘要： The present disclosure provides a method of fabricating a semiconductor device, the method including providing a substrate having a seal ring region and a circuit region, forming a first seal ring structure over the seal ring region, forming a second seal ring structure over the seal ring region and adjacent to the first seal ring structure, and forming a first passivation layer disposed over the first and second seal ring structures. A semiconductor device fabricated by such a method is also provided.

    摘要翻译： 本公开提供一种制造半导体器件的方法，所述方法包括提供具有密封环区域和电路区域的衬底，在所述密封环区域上形成第一密封环结构，在所述密封环上形成第二密封环结构 并且邻近第一密封环结构，以及形成设置在第一和第二密封环结构上的第一钝化层。 还提供了通过这种方法制造的半导体器件。

    Alignment for backside illumination sensor
    83.
    发明授权
    Alignment for backside illumination sensor 有权
    背面照明传感器对准

    公开(公告)号：US07588993B2

    公开(公告)日：2009-09-15

    申请号：US11951916

    申请日：2007-12-06

    申请人： Jen-Cheng Liu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu

    发明人： Jen-Cheng Liu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu

    IPC分类号： H01L21/76

    CPC分类号： H01L23/544 ,  H01L21/71 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： An apparatus and manufacturing method thereof, wherein an integrated circuit is located in a first region of a substrate having first and second opposing major surfaces, and wherein an alignment mark is located in a second region of the substrate and extends through the substrate between the first and second surfaces. The alignment mark may protrude from the first and/or second surfaces, and/or may comprise a plurality of substantially similar alignment marks. The second region may interpose the first region and a perimeter of the substrate. The second region may comprise a scribe region.

    摘要翻译： 一种装置及其制造方法，其中集成电路位于具有第一和第二相对主表面的基板的第一区域中，并且其中对准标记位于所述基板的第二区域中，并且延伸穿过所述基板在所述第一 和第二表面。 对准标记可以从第一和/或第二表面突出，和/或可以包括多个基本相似的对准标记。 第二区域可以插入衬底的第一区域和周边。 第二区域可以包括划线区域。

    Back side illuminated image sensor having isolated bonding pads
    85.
    发明授权
    Back side illuminated image sensor having isolated bonding pads 有权
    具有隔离接合垫的背面照明图像传感器

    公开(公告)号：US09165970B2

    公开(公告)日：2015-10-20

    申请号：US13028471

    申请日：2011-02-16

    申请人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Hsiao-Hui Tseng

    发明人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Hsiao-Hui Tseng

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14687 ,  H01L23/481 ,  H01L23/525 ,  H01L24/83 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14689

    摘要： Provided is an image sensor device. The image sensor device includes having a front side, a back side, and a sidewall connecting the front and back sides. The image sensor device includes a plurality of radiation-sensing regions disposed in the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers and extends beyond the sidewall of the substrate. The image sensor device includes a bonding pad that is spaced apart from the sidewall of the substrate. The bonding pad is electrically coupled to one of the interconnect layers of the interconnect structure.

    摘要翻译： 提供了一种图像传感器装置。 图像传感器装置包括具有连接前侧和后侧的前侧，后侧和侧壁。 图像传感器装置包括设置在基板中的多个辐射感测区域。 每个辐射感测区域可操作以感测通过后侧朝向辐射感测区域投射的辐射。 图像传感器装置包括耦合到基板的前侧的互连结构。 互连结构包括多个互连层并且延伸超过衬底的侧壁。 图像传感器装置包括与衬底的侧壁间隔开的接合焊盘。 接合焊盘电连接到互连结构的互连层之一。

    Method of forming an image device
    87.
    发明授权
    Method of forming an image device 有权
    形成图像装置的方法

    公开(公告)号：US08883544B2

    公开(公告)日：2014-11-11

    申请号：US13595494

    申请日：2012-08-27

    申请人： Szu-Ying Chen ,  Min-Feng Kao ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Dun-Nian Yaung

    发明人： Szu-Ying Chen ,  Min-Feng Kao ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Dun-Nian Yaung

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1463 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14689

    摘要： A method of forming of an image sensor device includes an isolation well formed in a pixel region of a substrate. The isolation well has a first conductivity type. A gate stack is formed over the isolation well on the substrate. A mask layer is formed over the isolation well and covering at least a majority portion of the gate stack. A plurality of dopants is implanted in the pixel region, using the gate stack and the mask layer as masks, to form doped isolation features. The plurality of dopants has the first conductivity type. A source region and a drain region are formed on opposite sides of the gate stack in the substrate. The source region and the drain region have a second conductivity type opposite to the A conductivity.

    摘要翻译： 形成图像传感器装置的方法包括在衬底的像素区域中形成的隔离阱。 隔离阱具有第一导电类型。 栅极堆叠形成在衬底上的隔离阱上。 掩模层形成在隔离阱上并覆盖栅极堆叠的至少大部分部分。 使用栅极堆叠和掩模层作为掩模将多个掺杂剂注入到像素区域中，以形成掺杂的隔离特征。 多个掺杂剂具有第一导电类型。 源极区域和漏极区域形成在衬底中的栅极堆叠的相对侧上。 源极区域和漏极区域具有与A电导率相反的第二导电类型。

    Vertically integrated image sensor chips and methods for forming the same
    88.
    发明授权
    Vertically integrated image sensor chips and methods for forming the same 有权
    垂直集成的图像传感器芯片及其形成方法

    公开(公告)号：US08766387B2

    公开(公告)日：2014-07-01

    申请号：US13475301

    申请日：2012-05-18

    申请人： Jeng-Shyan Lin ,  Feng-Chi Hung ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Szu-Ying Chen ,  Wen-De Wang ,  Tzu-Hsuan Hsu

    发明人： Jeng-Shyan Lin ,  Feng-Chi Hung ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Szu-Ying Chen ,  Wen-De Wang ,  Tzu-Hsuan Hsu

    IPC分类号： H01L31/02

    CPC分类号： H01L27/14687 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/1469 ,  H01L2224/48463

    摘要： A device includes a Backside Illumination (BSI) image sensor chip, which includes an image sensor disposed on a front side of a first semiconductor substrate, and a first interconnect structure including a plurality of metal layers on the front side of the first semiconductor substrate. A device chip is bonded to the image sensor chip. The device chip includes an active device on a front side of a second semiconductor substrate, and a second interconnect structure including a plurality of metal layers on the front side of the second semiconductor substrate. A first via penetrates through the BSI image sensor chip to connect to a first metal pad in the second interconnect structure. A second via penetrates through a dielectric layer in the first interconnect structure to connect to a second metal pad in the first interconnect structure, wherein the first via and the second via are electrically connected.

    摘要翻译： 一种装置包括背面照明（BSI）图像传感器芯片，其包括设置在第一半导体衬底的前侧上的图像传感器，以及包括在第一半导体衬底的前侧上的多个金属层的第一互连结构。 器件芯片被结合到图像传感器芯片。 器件芯片包括在第二半导体衬底的正面上的有源器件和在第二半导体衬底的正面上包括多个金属层的第二互连结构。 第一通孔穿过BSI图像传感器芯片以连接到第二互连结构中的第一金属焊盘。 第二通孔穿过第一互连结构中的电介质层，以连接到第一互连结构中的第二金属焊盘，其中第一通孔和第二通孔电连接。