摘要:
The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The low dielectric constant insulating film is formed by reaction of a plasma of a film-forming gas containing an oxygen-containing gas of N2O, H2O, or CO2, ammonia (NH3), and at least one of an alkyl compound having a siloxane bond and methylsilane (SiHn(CH3)4−n: n=0, 1, 2, 3).
摘要:
The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N2) to a major deposition gas component consisting of siloxane and N2O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film 25,27, or 28 on a substrate targeted for film formation.
摘要:
There is provided a method for improving film quality of an insulating film, which includes the steps of forming a silicon oxide film on a substrate, and heating the silicon oxide film by contacting an exposed surface of the silicon oxide film with a steam-containing atmosphere after the silicon oxide film is formed.
摘要:
A non-destructive sugar content measuring apparatus having a plurality of trays on which vegetables and fruits are to be placed, a transport device for successively delivering the trays at appropriate intervals, and first, second and third measuring sections provided in the course of a transport path and at which laser beams having wavelengths &lgr;1, &lgr;2 and &lgr;3 are respectively made incident on each vegetable or fruit and the amount of light of each laser beam emergent from the vegetable or fruit is measured with a detector provided at each measuring section and the absorbance of each laser beam is determined from the amount of incident light made incident on the vegetable or fruit and the amount of detected light which has been measured with the detector, to measure the sugar content of the vegetables and fruits on the basis of each absorbance.
摘要:
Providing a light bulb having a long life by preventing filament coil breakage. A glass bulb (1) has a sealing portion (4) at one end thereof and contains a filament coil (5). The filament coil (5) is suspended between lead-in wires (7, 8) extended externally of the sealing portion (4), with its opposite ends connected to respective one ends of the wires. The lead-in wires (7, 8) are supported by a stem (6) disposed between the sealing portion (4) and the filament coil (5). A getter (9) is disposed between the sealing portion (4) and the stem (6).
摘要:
The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film containing a coating insulating film having a low dielectric constant. In construction, there are provided the steps of preparing a substrate 20 on a surface of which a coating insulating film 26 is formed by coating a coating liquid containing any one selected from a group consisting of silicon-containing inorganic compound and silicon-containing organic compound, and forming a protection layer 27 for covering the coating insulating film 26 by plasmanizing a first film forming gas to react, wherein the first film forming gas consists of any one selected from a group consisting of alkoxy compound having Si—H bonds and siloxane having Si—H bonds and any one oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O.
摘要:
The present invention relates to a plasma doping system capable of handling larger-diameter wafers and of introducing impurities to a shallow depth with a lower energy level. The plasma doping system includes a plasma generation chamber provided with a high-frequency power source and with antennas for generating a helicon plasma of a gas containing conduction type impurities. An impurity introduction chamber is provided with a substrate holding fixture. A plasma flow passage/shaping chamber provides a flow passage through which the helicon plasma flows from the plasma generation chamber to the impurity introduction chamber and has a magnetic field generator for generating a magnetic field to constrict the helicon plasma flowing therethrough.
摘要:
A method for forming an interlayer insulating film is disclosed. This method includes the steps of: forming a first insulating film on a substrate, the film containing at least one of H2O, C and a hydrocarbon; forming pores in the first insulating film by heat treatment of the first insulating film to discharge the H2O, C or hydrocarbon therefrom; and forming a second insulating film on the porous first insulating film.
摘要:
There is provided a film forming pre-treatment method used when silicon containing insulating film, etc. are to be formed by virtue of thermal CVD method on a substrate 101 on which interconnection layers, etc. are formed. Before an insulating film is deposited on the substrate 101, gaseous H.sub.2 O is plasmanized and then a surface of the substrate 101 is exposed to such plasmanized H.sub.2 O.
摘要翻译:提供了在形成有互连层等的基板101上通过热CVD法形成含硅绝缘膜等时使用的成膜预处理方法。 在绝缘膜沉积在衬底101上之前,将气态H 2 O质子化,然后将衬底101的表面暴露于这种质子化的H 2 O.
摘要:
The present invention relates to a film forming method for forming a planarized interlayer insulating film to cover wiring layers, etc. of a semiconductor integrated circuit device. The method includes the steps of forming on a substrate 206, a phosphorus-containing insulating film 45a containing P.sub.2 O.sub.3 by using a film forming gas in which an oxidizing. gas is added into a gas mixture including a phosphorus-containing compound, which has III valence phosphorus and in which oxygen is bonded to at least one bond of the III valence phosphorus, and silicon-containing compound, or by using the film forming gas from which the oxidizing gas removed, heating the phosphorus-containing insulating film 45a while applying acceleration to the insulating film 45a to fluidize the insulating film and thus planarize a surface of the insulating film 45b while the insulating film 45a has a predetermined viscosity, and heating further the insulating film 45b after the surface of the insulating film 45b has been planarized, to sublimate P.sub.2 O.sub.3 in the insulating film 45b and thus solidify the insulating film 45b.
摘要翻译:本发明涉及一种用于形成半导体集成电路器件的布线层等的平坦化层间绝缘膜的成膜方法。 该方法包括以下步骤:通过使用其中进行氧化的成膜气体,在基板206上形成含有P 2 O 3的含磷绝缘膜45a。 将气体加入到含有III价态的磷的含磷化合物的气体混合物中,其中氧与III价态的磷的至少一个键结合,并且含硅化合物,或者通过使用成膜气体从 除去氧化气体,同时加热含磷绝缘膜45a,同时对绝缘膜45a施加加速度,使绝缘膜流化,从而使绝缘膜45b的表面平坦化,同时绝缘膜45a具有预定的粘度,并进一步加热 绝缘膜45b的表面之后的绝缘膜45b被平坦化,以使绝缘膜45b中的P2O3升华,从而固化绝缘膜45b。