Thin-film photoelectric conversion device and a method of manufacturing the same
    83.
    发明授权
    Thin-film photoelectric conversion device and a method of manufacturing the same 失效
    薄膜光电转换装置及其制造方法

    公开(公告)号:US07075002B1

    公开(公告)日:2006-07-11

    申请号:US08907182

    申请日:1997-08-06

    摘要: A method of manufacturing a thin-film solar cell, comprising the steps of: forming an amorphous silicon film on a substrate; placing a metal element that accelerates the crystallization of silicon in contact with the surface of the amorphous silicon film; subjecting the amorphous silicon film to a heat treatment to obtain a crystalline silicon film; depositing a silicon film to which phosphorus has been added in contact with the crystalline silicon film; and subjecting the crystalline silicon film and the silicon film to which phosphorus has been added to a heat treatment to getter the metal element from the crystalline film.

    摘要翻译: 一种制造薄膜太阳能电池的方法,包括以下步骤:在基板上形成非晶硅膜; 放置加速与非晶硅膜的表面接触的硅的结晶的金属元素; 对非晶硅膜进行热处理,得到结晶硅膜; 沉积已经加入磷的硅膜与结晶硅膜接触; 并对结晶硅膜和已加入磷的硅膜进行热处理,从结晶膜中吸收金属元素。

    Light Emitting Device and Manufacturing Method Thereof
    84.
    发明申请
    Light Emitting Device and Manufacturing Method Thereof 有权
    发光装置及其制造方法

    公开(公告)号:US20060141645A1

    公开(公告)日:2006-06-29

    申请号:US11276464

    申请日:2006-03-01

    IPC分类号: H01L21/00

    摘要: The concentration of oxygen, which causes problems such as decreases in brightness and dark spots through degradation of electrode materials, is lowered in an organic light emitting element having a layer made from an organic compound between a cathode and an anode, and in a light emitting device structured using the organic light emitting element. The average concentration of impurities contained in a layer made from an organic compound used in older to form an organic light emitting element having layers such as a hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer, and an electron injecting layer, is reduced to 5×1019/cm2 or less, preferably equal to or less than 1×1019/cm2, by removing the impurities with the present invention. Formation apparatuses are structured as stated in the specification in order to reduce the impurities in the organic compounds forming the organic light emitting elements.

    摘要翻译: 在具有由阴极和阳极之间的有机化合物制成的层的有机发光元件和发光的有机发光元件中,通过降低电极材料而导致诸如亮度和暗斑的降低等问题的氧浓度降低 使用有机发光元件构造的器件。 为了形成具有空穴注入层,空穴传输层,发光层,电子传输层等的层的有机发光元件,使用由有机化合物制成的层中所含有的杂质的平均浓度, 电子注入层减少到5×10 19 / cm 2以下,优选等于或小于1×10 9 / cm 2 通过除去本发明的杂质。 为了减少形成有机发光元件的有机化合物中的杂质,形成装置按说明书所述进行结构化。

    User identity authentication system and user identity authentication method and mobile telephonic device
    85.
    发明授权
    User identity authentication system and user identity authentication method and mobile telephonic device 有权
    用户身份认证系统和用户身份认证方法和移动电话设备

    公开(公告)号:US07068254B2

    公开(公告)日:2006-06-27

    申请号:US09851415

    申请日:2001-05-09

    IPC分类号: G06K9/00

    摘要: It is an object to provide an user identity authentication system and an user identity authentication method with the Internet and a mobile information communication device. The mobile information communication device includes a liquid crystal device with a built-in image sensor. The image sensor reads individual information of a user, and user's identity is authenticated based on the individual information. A result of the authentication is unicast via the Internet. Alternatively, it is judged whether or not the result of the authentication is required to be unicast in accordance with a degree of requirement preset in the mobile information communication device or a destination terminal of communication, and the result is unicast via the Internet only when needed.

    摘要翻译: 本发明的目的是提供一种用户身份认证系统和用户身份认证方法与因特网和移动信息通信设备。 移动信息通信装置包括具有内置图像传感器的液晶装置。 图像传感器读取用户的个人信息,并且基于个人信息认证用户的身份。 认证的结果是通过互联网进行单播。 或者,根据在移动信息通信装置或通信目的地终端中预先设定的要求,判断认证结果是否需要单播,并且结果仅在需要时通过因特网单播 。

    Organic semiconductor device and process of manufacturing the same
    86.
    发明申请
    Organic semiconductor device and process of manufacturing the same 有权
    有机半导体器件及其制造工艺相同

    公开(公告)号:US20060131573A1

    公开(公告)日:2006-06-22

    申请号:US11354905

    申请日:2006-02-16

    IPC分类号: H01L29/08

    摘要: The present invention is for providing a sophisticated active matrix type organic semiconductor device. A first electrode 102 is formed on an insulated surface. A second insulated film 104 is formed on the first electrode 102 via a first insulated film 103. An organic semiconductor film is formed on an opening part formed on the second insulated film 104 and the second insulated film 104. An organic semiconductor film 105 is obtained by polishing the same until the second insulated film 104 is exposed. Furthermore, by forming a second electrode 106 and a third electrode 107 on the organic semiconductor film 105, an organic semiconductor device of the present invention can be obtained.

    摘要翻译: 本发明提供一种复杂的有源矩阵型有机半导体器件。 第一电极102形成在绝缘表面上。 第一绝缘膜103通过第一绝缘膜103形成在第一电极102上。 在形成在第二绝缘膜104和第二绝缘膜104上的开口部上形成有机半导体膜。 通过对其进行研磨,得到有机半导体膜105,直到第二绝缘膜104露出为止。 此外,通过在有机半导体膜105上形成第二电极106和第三电极107,可以获得本发明的有机半导体器件。

    Method of manufacturing semiconductor device
    89.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US06953717B2

    公开(公告)日:2005-10-11

    申请号:US10959071

    申请日:2004-10-07

    摘要: A grain size of a crystal grain in a crystalline semiconductor film obtained by a thermal crystallization method using a metallic element is reduced. Thus, the number of crystal grains in active regions of a device is made uniform. The thermal crystallization method using a metallic element is performed for a semiconductor film formed on an insulating film formed at a lower temperature than that at formation of the semiconductor film and that at crystallization of the semiconductor film. By thermal treatment in a step of crystallizing the semiconductor film, stress of the insulating film is applied to the semiconductor film, thus causing distortion in the semiconductor film. When the distortion is caused, surface energy and a chemical potential of the semiconductor film are changed to promote the generation of a natural nucleus. Therefore, since a generation density of the crystal nucleus is increased, a grain size of a crystal grain can be reduced.

    摘要翻译: 通过使用金属元素的热结晶法获得的结晶半导体膜中的晶粒的晶粒尺寸减小。 因此,使器件的有源区域中的晶粒数量均匀。 对于形成在比形成半导体膜的温度低的半导体膜上形成的半导体膜和在半导体膜结晶时,进行使用金属元素的热结晶法。 通过在半导体膜结晶的步骤中进行热处理,绝缘膜的应力被施加到半导体膜,从而导致半导体膜的变形。 当引起变形时,改变表面能和半导体膜的化学势,促进天然核的产生。 因此,由于晶核的产生密度增加,因此可以降低晶粒的晶粒尺寸。

    ID label, ID tag, and ID card
    90.
    发明申请
    ID label, ID tag, and ID card 有权
    ID标签,ID标签和身份证

    公开(公告)号:US20050168339A1

    公开(公告)日:2005-08-04

    申请号:US11044609

    申请日:2005-01-28

    IPC分类号: G06K19/077 G08B13/14

    摘要: In commercial products to which a non-contact type or contact type ID label or ID tag is attached and ID cards, there is fear that, due to a difference between coefficients of thermal expansion between an antenna for communication and a resin provided around the antenna, stress is applied to the resin with the larger coefficient of thermal expansion to break the resin. This contributes to decrease in manufacturing yield, lifetime, and reliability of an ID label or the like. In an article such as an ID label, an ID tag, and an ID card according to the present invention, a filler is included in a filling layer provided around an antenna forming an ID label, an ID tag, and an ID card so that the difference in coefficient of thermal expansion between the antenna and the filling layer can be reduced. This makes it possible to ease generation of stress due to the difference in coefficient of thermal expansion and prevent peeling and cracks of the filling layer.

    摘要翻译: 在与非接触型或接触型ID标签或ID标签相连的商业产品中,ID卡有恐惧,由于通信用天线与设置在天线周围的树脂之间的热膨胀系数之间的差异 对具有较大的热膨胀系数的树脂施加应力以破坏树脂。 这导致ID标签等的制造产量,寿命和可靠性的降低。 在根据本发明的诸如ID标签,ID标签和ID卡的物品中,在形成ID标签,ID标签和ID卡的天线周围的填充层中包括填充物,使得 可以降低天线与填充层之间的热膨胀系数的差异。 这使得可以缓解由于热膨胀系数的差异导致的应力的产生,并且防止填充层的剥离和裂纹。