公开(公告)号：US20050202644A1

公开(公告)日：2005-09-15

申请号：US11120353

申请日：2005-05-02

申请人： Mark Doczy ,  Mark Liu ,  Jack Kavalieros ,  Justin Brask ,  Matthew Metz ,  Robert Chau

发明人： Mark Doczy ,  Mark Liu ,  Jack Kavalieros ,  Justin Brask ,  Matthew Metz ,  Robert Chau

IPC分类号： H01L21/268 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/495 ,  H01L21/268 ,  H01L21/823828 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66575 ,  H01L29/6659

摘要： Methods of forming a microelectronic structure are described. Those methods comprise providing a substrate comprising source/drain and gate regions, wherein the gate region comprises a metal layer disposed on a gate dielectric layer, and then laser annealing the substrate.

摘要翻译： 描述形成微电子结构的方法。 这些方法包括提供包括源极/漏极和栅极区域的衬底，其中栅极区域包括设置在栅极介电层上的金属层，然后激光退火衬底。

公开(公告)号：US20050101134A1

公开(公告)日：2005-05-12

申请号：US10704498

申请日：2003-11-06

申请人： Justin Brask ,  Mark Doczy ,  Jack Kavalieros ,  Uday Shah ,  Matthew Metz ,  Robert Chau ,  Robert Turkot

发明人： Justin Brask ,  Mark Doczy ,  Jack Kavalieros ,  Uday Shah ,  Matthew Metz ,  Robert Chau ,  Robert Turkot

IPC分类号： C23F1/02 ,  H01L21/3213 ,  H01L21/8238 ,  H01L21/302 ,  H01L21/461

CPC分类号： C23F1/02 ,  H01L21/32134 ,  H01L21/823842

摘要： A method for etching a metal layer is described. That method comprises forming a metal layer on a substrate, then exposing part of the metal layer to a wet etch chemistry that comprises an active ingredient with a diameter that exceeds the thickness of the metal layer.

摘要翻译： 描述了蚀刻金属层的方法。 该方法包括在基底上形成金属层，然后将金属层的一部分暴露于包含直径超过金属层厚度的活性成分的湿式蚀刻化学物质。

公开(公告)号：US20060008954A1

公开(公告)日：2006-01-12

申请号：US11218355

申请日：2005-09-02

申请人： Jack Kavalieros ,  Justin Brask ,  Mark Doczy ,  Scott Hareland ,  Matthew Metz ,  Chris Barns ,  Robert Chau

发明人： Jack Kavalieros ,  Justin Brask ,  Mark Doczy ,  Scott Hareland ,  Matthew Metz ,  Chris Barns ,  Robert Chau

IPC分类号： H01L31/119 ,  H01L31/113 ,  H01L31/062 ,  H01L29/94 ,  H01L29/76 ,  H01L21/84 ,  H01L21/00

CPC分类号： H01L29/517 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/66545 ,  Y10S438/926

摘要： Methods and associated structures of forming a microelectronic device are described. Those methods comprise providing a substrate comprising a first transistor structure comprising an n-type gate material and second transistor structure comprising a p-type gate material, selectively removing the n-type gate material to form a recess in the first gate structure, and then filling the recess with an n-type metal gate material.

摘要翻译： 描述形成微电子器件的方法和相关结构。 这些方法包括提供包括包括n型栅极材料的第一晶体管结构和包括p型栅极材料的第二晶体管结构的衬底，选择性地去除n型栅极材料以在第一栅极结构中形成凹陷，然后 用n型金属栅极材料填充凹部。

公开(公告)号：US20050214987A1

公开(公告)日：2005-09-29

申请号：US10809853

申请日：2004-03-24

申请人： Uday Shah ,  Chris Barns ,  Mark Doczy ,  Justin Brask ,  Jack Kavalieros ,  Matthew Metz ,  Robert Chau

发明人： Uday Shah ,  Chris Barns ,  Mark Doczy ,  Justin Brask ,  Jack Kavalieros ,  Matthew Metz ,  Robert Chau

IPC分类号： H01L21/00 ,  H01L21/336 ,  H01L21/4763 ,  H01L21/84

CPC分类号： H01L29/66772 ,  H01L21/84 ,  H01L29/66545

摘要： A method for making a semiconductor device is described. That method comprises forming a polysilicon layer on a dielectric layer, which is formed on a substrate. The polysilicon layer is etched to generate a patterned polysilicon layer with an upper surface that is wider than its lower surface. The method may be applied, when using a replacement gate process to make transistors that have metal gate electrodes.

摘要翻译： 描述制造半导体器件的方法。 该方法包括在形成在基板上的电介质层上形成多晶硅层。 蚀刻多晶硅层以产生具有比其下表面更宽的上表面的图案化多晶硅层。 当使用替换栅极工艺来制造具有金属栅电极的晶体管时，可以应用该方法。

公开(公告)号：US20050101113A1

公开(公告)日：2005-05-12

申请号：US10704497

申请日：2003-11-06

申请人： Justin Brask ,  Mark Doczy ,  Jack Kavalieros ,  Uday Shah ,  Matthew Metz ,  Robert Chau ,  Robert Turkot

发明人： Justin Brask ,  Mark Doczy ,  Jack Kavalieros ,  Uday Shah ,  Matthew Metz ,  Robert Chau ,  Robert Turkot

IPC分类号： H01L21/28 ,  H01L21/3213 ,  H01L21/8238 ,  H01L29/49 ,  H01L21/3205

CPC分类号： H01L29/4958 ,  H01L21/28079 ,  H01L21/32134 ,  H01L21/823842

摘要： A method for making a semiconductor device is described. That method comprises forming a dielectric layer on a substrate, and forming a first metal layer on a first part of the dielectric layer, leaving a second part of the dielectric layer exposed. After a second metal layer is formed on both the first metal layer and the second part of the dielectric layer, a masking layer is formed on the second metal layer.

摘要翻译： 描述制造半导体器件的方法。 该方法包括在衬底上形成电介质层，并且在介电层的第一部分上形成第一金属层，留下介电层的第二部分露出。 在第一金属层和电介质层的第二部分上形成第二金属层之后，在第二金属层上形成掩模层。

公开(公告)号：US20050048794A1

公开(公告)日：2005-03-03

申请号：US10652796

申请日：2003-08-28

申请人： Justin Brask ,  Mark Doczy ,  Scott Hareland ,  John Barnak ,  Matthew Metz ,  Jack Kavalieros ,  Robert Chau

发明人： Justin Brask ,  Mark Doczy ,  Scott Hareland ,  John Barnak ,  Matthew Metz ,  Jack Kavalieros ,  Robert Chau

IPC分类号： H01L21/28 ,  H01L21/30 ,  H01L21/306 ,  H01L21/316 ,  H01L29/51 ,  H01L21/336 ,  H01L21/3205 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02244 ,  H01L21/02052 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/3003 ,  H01L21/31612 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31683 ,  H01L21/31691 ,  H01L29/513 ,  H01L29/517

摘要： A method for making a semiconductor device is described. That method comprises forming a metal oxide layer on a substrate, converting at least part of the metal oxide layer to a metal layer; and oxidizing the metal layer to generate a metal oxide high-k gate dielectric layer.

公开(公告)号：US20070152271A1

公开(公告)日：2007-07-05

申请号：US11322745

申请日：2005-12-30

申请人： Gilbert Dewey ,  Mark Doczy ,  Suman Datta ,  Justin Brask ,  Matthew Metz

发明人： Gilbert Dewey ,  Mark Doczy ,  Suman Datta ,  Justin Brask ,  Matthew Metz

IPC分类号： H01L21/8234 ,  H01L21/336 ,  H01L29/76

CPC分类号： H01L29/513 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/823828 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66795 ,  H01L29/78

摘要： A method of manufacturing a semiconductor device and a novel semiconductor device are disclosed herein. An exemplary method includes sputtering a capping layer in-situ on a gate dielectric layer, before any high temperature processing steps are performed.

摘要翻译： 本文公开了半导体器件和新型半导体器件的制造方法。 示例性的方法包括在执行任何高温处理步骤之前，在栅介质层上原位溅射覆盖层。

公开(公告)号：US20060071275A1

公开(公告)日：2006-04-06

申请号：US10956279

申请日：2004-09-30

申请人： Justin Brask ,  Brian Doyle ,  Jack Kavalieros ,  Mark Doczy ,  Uday Shah ,  Robert Chau

发明人： Justin Brask ,  Brian Doyle ,  Jack Kavalieros ,  Mark Doczy ,  Uday Shah ,  Robert Chau

IPC分类号： H01L27/12

CPC分类号： H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/41791 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66795 ,  Y10S438/926 ,  Y10S438/974

摘要： A semiconductor device comprising a semiconductor body having a top surface and a first and second laterally opposite sidewalls as formed on an insulating substrate is claimed. A gate dielectric is formed on the top surface of the semiconductor body and on the first and second laterally opposite sidewalls of the semiconductor body. A gate electrode is then formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the first and second laterally opposite sidewalls of the semiconductor body. The gate electrode comprises a metal film formed directly adjacent to the gate dielectric layer. A pair of source and drain regions are then formed in the semiconductor body on opposite sides of the gate electrode.

公开(公告)号：US20060138552A1

公开(公告)日：2006-06-29

申请号：US11360269

申请日：2006-02-22

申请人： Justin Brask ,  Brian Doyle ,  Jack Kavalieros ,  Mark Doczy ,  Uday Shah ,  Robert Chau

发明人： Justin Brask ,  Brian Doyle ,  Jack Kavalieros ,  Mark Doczy ,  Uday Shah ,  Robert Chau

IPC分类号： H01L29/94

CPC分类号： H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/41791 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66795 ,  Y10S438/926 ,  Y10S438/974

摘要： A semiconductor device comprising a semiconductor body having a top surface and a first and second laterally opposite sidewalls as formed on an insulating substrate is claimed. A gate dielectric is formed on the top surface of the semiconductor body and on the first and second laterally opposite sidewalls of the semiconductor body. A gate electrode is then formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the first and second laterally opposite sidewalls of the semiconductor body. The gate electrode comprises a metal film formed directly adjacent to the gate dielectric layer. A pair of source and drain regions are then formed in the semiconductor body on opposite sides of the gate electrode.

公开(公告)号：US20050148130A1

公开(公告)日：2005-07-07

申请号：US10748545

申请日：2003-12-29

申请人： Mark Doczy ,  Justin Brask ,  Jack Kavalieros ,  Uday Shah ,  Chris Barns ,  Robert Chau

发明人： Mark Doczy ,  Justin Brask ,  Jack Kavalieros ,  Uday Shah ,  Chris Barns ,  Robert Chau

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/49 ,  H01L21/338 ,  H01L21/4763

CPC分类号： H01L29/66545 ,  H01L21/28079 ,  H01L21/823842 ,  H01L29/495

摘要： A method for making a semiconductor device is described. That method comprises forming a hard mask and an etch stop layer on a patterned sacrificial gate electrode layer. After first and second spacers are formed on opposite sides of that patterned sacrificial layer, the patterned sacrificial layer is removed to generate a trench that is positioned between the first and second spacers. At least part of the trench is filled with a metal layer.

摘要翻译： 描述制造半导体器件的方法。 该方法包括在图案化的牺牲栅极电极层上形成硬掩模和蚀刻停止层。 在第一和第二间隔物形成在该图案化的牺牲层的相对侧上之后，去除图案化的牺牲层以产生位于第一和第二间隔物之间​​的沟槽。 沟槽的至少一部分填充有金属层。