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157 条记录 (耗时 0.022 秒)

    Method of fabricating a ferroelectric memory cell
    85.
    发明授权
    Method of fabricating a ferroelectric memory cell 有权
    制造铁电存储单元的方法

    公开(公告)号：US06548343B1

    公开(公告)日：2003-04-15

    申请号：US09702985

    申请日：2000-10-31

    申请人： Scott R. Summerfelt ,  Theodore S. Moise ,  Guoqiang Xing ,  Luigi Colombo ,  Tomoyuki Sakoda ,  Stephen R. Gilbert ,  Alvin L. S. Loke ,  Shawming Ma ,  Rahim Kavari ,  Laura Wills-Mirkarimi ,  Jun Amano

    发明人： Scott R. Summerfelt ,  Theodore S. Moise ,  Guoqiang Xing ,  Luigi Colombo ,  Tomoyuki Sakoda ,  Stephen R. Gilbert ,  Alvin L. S. Loke ,  Shawming Ma ,  Rahim Kavari ,  Laura Wills-Mirkarimi ,  Jun Amano

    IPC分类号： H01L218242

    CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57

    摘要： An embodiment of the instant invention is a method of fabricating a ferroelectric capacitor which is situated over a structure, the method comprising the steps of: forming a bottom electrode on the structure (124 of FIG. 1), the bottom electrode having a top surface and sides; forming a capacitor dielectric (126 of FIG. 1) comprised of a ferroelectric material on the bottom electrode, the capacitor dielectric having a top surface and sides; forming a top electrode (128 and 130 of FIG. 1) on the capacitor dielectric, the top electrode having a top surface and sides, the ferroelectric capacitor is comprised of the bottom electrode, the capacitor dielectric, and the top electrode; forming a barrier layer (118 and 120 of FIG. 1) on the side of the bottom electrode, the side of the capacitor dielectric, and the side of the top electrode; forming a dielectric layer on the barrier layer and the structure, the dielectric having a top surface and a bottom surface; and performing a thermal step for a duration at a temperature between 400 and 900 C. in an ambient comprised of a gas selected from the group consisting of: argon, nitrogen, and a combination thereof, the step of performing a thermal step being performed after the step of forming the barrier layer.

    摘要翻译： 本发明的一个实施例是制造位于结构上方的铁电电容器的方法，所述方法包括以下步骤：在所述结构（图1的124）上形成底电极，所述底电极具有顶表面 和边; 在底部电极上形成由铁电材料构成的电容器电介质（图1的126），电容器电介质具有顶表面和侧面; 在电容器电介质上形成顶电极（图1的128和130），顶电极具有顶表面和侧面，铁电电容器由底电极，电容器电介质和顶电极组成; 在底电极侧，电容器电介质侧和顶电极侧形成阻挡层（图1的118和120）; 在所述阻挡层和所述结构上形成电介质层，所述电介质具有顶表面和底表面; 并且在由选自氩，氮及其组合的气体组成的环境中在400-900℃的温度下进行热步骤，所述环境包括：在步骤 形成阻挡层的步骤。

    Process for obtaining hyperfine magnetite powder
    86.
    发明授权
    Process for obtaining hyperfine magnetite powder 失效
    获得超细磁铁矿粉的工艺

    公开(公告)号：US4025611A

    公开(公告)日：1977-05-24

    申请号：US552604

    申请日：1975-02-24

    申请人： Franco Montino ,  Luigi Colombo ,  Giuseppe Sironi

    发明人： Franco Montino ,  Luigi Colombo ,  Giuseppe Sironi

    IPC分类号： C01G49/08 ,  H01F1/11 ,  C01G49/02

    CPC分类号： B82Y30/00 ,  C01G49/08 ,  C01P2002/54 ,  C01P2004/38 ,  C01P2004/62 ,  C01P2004/64

    摘要： A process is disclosed for producing magnetite having an equiaxial morphology in the state of a hyperfine powder, starting from a solution of a bivalent iron solution, characterized in that:A. an aqueous suspension of Fe(OH).sub.2 is prepared by reacting an aqueous solution of a ferrous salt with alkali;B. said aqueous suspension of Fe(OH).sub.2 is fed into an autoclave into which is also introduced a quantity of air corresponding to 4-15 normal liters per 100 g of bivalent Fe; andC. the autoclave is then brought to a temperature between 150.degree. and 200.degree. C and maintained at this temperature until the inside pressure has stabilized itself at a constant level, thereby bringing about the formation of the desired magnetite which, once discharged from the autoclave, is washed and dried. The aqueous suspension of Fe(OH).sub.2 subjected to thermal decomposition in the autoclave may have present therein Cu.sup.+.sup.+ion, in a quantity between 0.3 and 1.4% by weight of the bivalent Fe. When Cu.sup.+.sup.+ is present in the aqueous suspension of Fe(OH).sub.2 which is subjected to the thermal decomposition, it is also desirable to have dissolved therein Na.sub.2 S in such a quantity as to provide from 20 to 60 mg of S per 100 g of bivalent Fe.

    摘要翻译： 公开了一种从二价铁溶液溶液开始制造具有超细粉末状态的等轴形态的磁铁矿的方法，其特征在于：

    Method to maximize nitrogen concentration at the top surface of gate dielectrics
    89.
    发明授权
    Method to maximize nitrogen concentration at the top surface of gate dielectrics 有权
    最大化栅极电介质顶表面的氮浓度的方法

    公开(公告)号：US08198184B2

    公开(公告)日：2012-06-12

    申请号：US12570620

    申请日：2009-09-30

    申请人： James Joseph Chambers ,  Hiroaki Niimi ,  Luigi Colombo

    发明人： James Joseph Chambers ,  Hiroaki Niimi ,  Luigi Colombo

    IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/314

    CPC分类号： H01L21/28202 ,  H01L21/3145 ,  H01L21/3185 ,  H01L29/4916 ,  H01L29/518 ,  H01L29/7833

    摘要： An integrated circuit having a gate dielectric layer (414, 614, 814) having an improved nitrogen profile and a method of fabrication. The gate dielectric layer is a graded layer with a significantly higher nitrogen concentration at the electrode surface than near the substrate surface. An amorphous silicon layer (406) may be deposited prior to nitridation to retain the nitrogen concentration at the top surface (416). Alternatively, a thin silicon nitride layer (610) may be deposited after anneal or a wet nitridation process may be performed.

    摘要翻译： 一种具有具有改进的氮分布的栅介电层（414,614,814）和一种制造方法的集成电路。 栅极电介质层是在电极表面处的氮浓度显着高于衬底表面附近的梯度层。 可以在氮化之前沉积非晶硅层（406）以将氮浓度保持在顶表面（416）。 或者，可以在退火之后沉积薄氮化硅层（610），或者可以执行湿式氮化处理。