公开(公告)号：US06940099B2

公开(公告)日：2005-09-06

申请号：US10243321

申请日：2002-09-13

申请人： Toshio Hata ,  Kensaku Yamamoto ,  Mayuko Fudeta ,  Masaki Tatsumi

发明人： Toshio Hata ,  Kensaku Yamamoto ,  Mayuko Fudeta ,  Masaki Tatsumi

IPC分类号： H01L33/32 ,  H01L33/42 ,  H01L33/62 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L24/45 ,  H01L24/73 ,  H01L33/405 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A gallium nitride compound semiconductor light emitting element has a nitride layered body formed on a translucent substrate. A P type pad electrode, an N type pad electrode and a P type electrode are formed at the layered body, each having the desired reflectance. The thickness of the translucent substrate and the nitride layered body stacked thereon of the semiconductor light emitting element is 60 μm to 460 μm.

摘要翻译： 氮化镓系化合物半导体发光元件具有在透光性基板上形成的氮化物层叠体。 在层叠体上形成P型焊盘电极，N型焊盘电极和P型电极，每个具有所需的反射率。 半导体发光元件的半透明基板和层叠体的氮化物层叠体的厚度为60μm〜460μm。

公开(公告)号：US06603146B1

公开(公告)日：2003-08-05

申请号：US09684279

申请日：2000-10-06

申请人： Toshio Hata ,  Taiji Morimoto ,  Takeshi Kamikawa ,  Kensaku Yamamoto

发明人： Toshio Hata ,  Taiji Morimoto ,  Takeshi Kamikawa ,  Kensaku Yamamoto

IPC分类号： H01L2715

CPC分类号： H01L33/44 ,  H01L33/42 ,  H01L33/507 ,  H01L33/508 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/8592 ,  Y10S257/918 ,  H01L2924/00

摘要： A semiconductor light-emitting device includes: a substrate; a semiconductor layer including at least one light-emitting region; a metal layer having a light transmitting characteristic; a first fluorescent material layer for converting at least a portion of first light emitted from the light-emitting region into second light having a different wavelength from the first light; and an oxide semiconductor layer formed between the metal layer and the first fluorescent material layer, and having a light-transmitting characteristic.

摘要翻译： 一种半导体发光器件包括：衬底; 包括至少一个发光区域的半导体层; 具有透光特性的金属层; 用于将从发光区域发射的第一光的至少一部分转换成具有与第一光不同的波长的第二光的第一荧光材料层; 以及形成在金属层和第一荧光体层之间并具有透光特性的氧化物半导体层。

公开(公告)号：US06555847B2

公开(公告)日：2003-04-29

申请号：US09837197

申请日：2001-04-19

申请人： Toshio Hata ,  Mayuko Fudeta ,  Kensaku Yamamoto ,  Masaki Tatsumi

发明人： Toshio Hata ,  Mayuko Fudeta ,  Kensaku Yamamoto ,  Masaki Tatsumi

IPC分类号： H01L3300

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01S5/0425 ,  H01S5/32341

摘要： A nitride based semiconductor light emitting element includes at least a gallium nitride based compound semiconductor layer of a first conductivity type and a gallium nitride based compound semiconductor layer of a second conductivity type stacked on a substrate. On a main region of the top surface of the semiconductor layer of the second conductivity type, a Pd-containing electrode is formed, and the top surface and side surfaces of the Pd-containing electrode as well as the surface of the semiconductor layer of the second conductivity type in a region of at least a prescribed width from the side surfaces are covered by a conductive shielding film to be shielded from the atmosphere or a mold resin.

摘要翻译： 氮化物类半导体发光元件至少包括第一导电类型的氮化镓基化合物半导体层和层叠在基板上的第二导电类型的氮化镓基化合物半导体层。 在第二导电类型的半导体层的顶表面的主要区域上形成含Pd电极，并且含Pd电极的顶表面和侧表面以及半导体层的表面 从侧面至少规定宽度的区域中的第二导电类型被导电屏蔽膜覆盖以与大气隔绝或模制树脂。

公开(公告)号：US06284559B1

公开(公告)日：2001-09-04

申请号：US09630327

申请日：2000-07-31

申请人： Toshio Hata

发明人： Toshio Hata

IPC分类号： H01L2100

CPC分类号： H01L33/32 ,  H01L33/145 ,  H01S5/2063 ,  H01S5/2231 ,  H01S5/32341 ,  H01S2301/173

摘要： A gallium nitride group compound semiconductor light-emitting device comprises a substrate and a layered structure provided on the substrate. The layered structure includes: an active layer; an upper cladding layer and a lower cladding layer which is located closer to the substrate than the upper cladding layer, the active layer interposed between the cladding layers; an internal current constricting layer having an opening for constricting a current within a selected region of the active layer, the internal current constricting layer being provided on the upper cladding layer; a surface protecting layer for covering the internal current constricting layer and an exposed surface of the upper cladding layer in the opening of the internal current constricting layer; and a regrowth layer provided on the surface protecting layer. The surface protecting layer serves as a protecting layer for the upper cladding layer and the internal current constricting layer in a step of forming the regrowth layer.

摘要翻译： 氮化镓基化合物半导体发光器件包括基板和设置在基板上的层状结构。 层状结构包括：活性层; 位于比上包层更靠近基板的上包层和下包层，介于包层之间的有源层; 具有用于收缩有源层的选定区域内的电流的开口的内部电流收缩层，所述内部电流收缩层设置在所述上​​部包层上; 用于覆盖内部电流限制层的表面保护层和内部电流收缩层的开口中的上部包层的暴露表面; 以及设置在表面保护层上的再生长层。 在形成再生长层的步骤中，表面保护层用作上部包层和内部电流收缩层的保护层。

公开(公告)号：US5866440A

公开(公告)日：1999-02-02

申请号：US950527

申请日：1997-10-14

申请人： Toshio Hata

发明人： Toshio Hata

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343 ,  H01L21/00

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01S5/2231 ,  H01S5/32341 ,  Y10S148/095

摘要： After the active layer including indium is formed, the evaporation preventing layer is formed at a temperature which does not cause liberation of indium. The p-type Al.sub.X Ga.sub.1-X N (0.ltoreq.X.ltoreq.1) or the like is used for the evaporation preventing layer. Increasing the substrate temperature to as high as 1020.degree. C. for forming the upper cladding layer does not cause liberation of indium from the active layer because the evaporation preventing layer is provided. As a result, the composition ratio of indium can be easily controlled and the high-quality active layer and the high-quality interface between the active layer and the upper cladding layer can be provided.

摘要翻译： 在形成包含铟的有源层之后，在不会导致铟释放的温度下形成防蒸镀层。 用于蒸发防止层的p型AlXGa1-XN（0

公开(公告)号：US5491106A

公开(公告)日：1996-02-13

申请号：US97316

申请日：1993-07-23

申请人： Akinori Seki ,  Hiroyuki Hosoba ,  Toshio Hata ,  Masafumi Kondo ,  Takahiro Suyama ,  Sadayoshi Matsui

发明人： Akinori Seki ,  Hiroyuki Hosoba ,  Toshio Hata ,  Masafumi Kondo ,  Takahiro Suyama ,  Sadayoshi Matsui

IPC分类号： H01L21/20 ,  H01L21/203 ,  H01S5/00 ,  H01S5/223 ,  H01S5/323 ,  H01L21/302

CPC分类号： H01S5/32308 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02631 ,  H01L21/02658 ,  H01S5/2231 ,  H01S5/32316

摘要： A method for growing a compound semiconductor layer of Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1) on a compound semiconductor substrate uses a molecular beam epitaxial apparatus, the method including the steps of providing the substrate having a GaAs layer on an upper surface thereof, thermally etching the GaAs layer by heating the substrate at a temperature and irradiating the GaAs layer with a gallium molecular beam and an arsenic molecular beam to expose the upper surface of the substrate, and growing the Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1) layer on the upper surface of the substrate.

摘要翻译： 在化合物半导体衬底上生长Al x Ga 1-x As（0≤x≤1）的化合物半导体层的方法使用分子束外延装置，该方法包括以下步骤：将具有GaAs层的衬底 通过在温度下加热衬底并用镓分子束和砷分子束照射GaAs层来暴露衬底的上表面，并且生长Al x Ga 1-x As（0 < = x <1）层。

公开(公告)号：US3944376A

公开(公告)日：1976-03-16

申请号：US485039

申请日：1974-07-01

申请人： Toshio Hata

发明人： Toshio Hata

IPC分类号： F16C11/06 ,  F16C11/08

CPC分类号： F16C11/0633 ,  Y10T403/32713 ,  Y10T403/32762

摘要： A constant torque ball joint employs upper and lower bearing pieces made of a self-lubricating material to journal the ball portion of a ball stud with their segmental semi-spherical internal surfaces and also employs upper and lower elastic material blocks having a longitudinal elastic modulus Eo of 1.5 to 10 kg/mm.sup.2 to substantially enclose tightly respectively the outer surfaces of the upper and lower bearing pieces. The upper and lower bearing pieces and the upper and lower elastic blocks with the ball portion of the ball stud are mounted whereby a small space is left between the upper and lower bearing pieces which are inserted in the socket cavity of a metallic socket joint rod. A metallic cover disc is applied over these inserted members and the end rim of the socket cavity is swaged to crimp the cover disc to substantially completely enclose the bearing pieces and the elastic blocks within the socket cavity and the cover disc. The elastic blocks are kept in a state of elastic compression at an elastic compression rate of 20 percent or less.

摘要翻译： 恒转矩球接头使用由自润滑材料制成的上下轴承片，使其具有节段半球形内表面的球头螺栓的球形部分轴颈，并且还采用具有纵向弹性模量Eo的上下弹性材料块 为1.5〜10kg / mm 2，以分别基本上紧密地封闭上，下轴承片的外表面。 安装上下轴承片以及具有球头螺栓的球部的上下弹性块，由此在插入金属插座接头杆的插座空腔中的上轴承片和下轴承片之间留有小的空间。 在这些插入的构件上施加金属盖盘，并且模制插座空腔的端缘以压盖盖盘，以基本上完​​全包围轴承片和弹性块在插座腔和盖盘内。 弹性块以弹性压缩率保持在20％以下的弹性压缩状态。

公开(公告)号：US09666769B2

公开(公告)日：2017-05-30

申请号：US13988405

申请日：2011-11-15

申请人： Shinji Osaki ,  Toyonori Uemura ,  Toshio Hata ,  Tomokazu Nada ,  Tatsuya Morioka ,  Makoto Matsuda ,  Shinya Ishizaki ,  Makoto Agatani ,  Hitoshi Matsushita

发明人： Shinji Osaki ,  Toyonori Uemura ,  Toshio Hata ,  Tomokazu Nada ,  Tatsuya Morioka ,  Makoto Matsuda ,  Shinya Ishizaki ,  Makoto Agatani ,  Hitoshi Matsushita

IPC分类号： H01J1/62 ,  H01J63/04 ,  H01L33/50 ,  A01G7/04 ,  H01L25/075 ,  H05B33/12

CPC分类号： H01L33/504 ,  A01G7/045 ,  H01L25/0753 ,  H01L33/502 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H05B33/12 ,  Y02P60/149 ,  H01L2924/00014 ,  H01L2924/00

摘要： A substrate-type LED light source (10) includes: at least one blue LED chip (2) which has an emission peak in a range from 400 nm to 480 nm so as to correspond to a blue light region absorption peak of chlorophyll; a red phosphor (7b) which emit, upon receiving excitation light from the at least one blue LED chip (2), light having a peak wavelength in a range from 620 nm to 700 nm so as to correspond to a red light region absorption peak of chlorophyll; and a resin layer (7) in which the red phosphor 7b is dispersed and which covers the at least one blue LED chip (2).

公开(公告)号：US09018832B2

公开(公告)日：2015-04-28

申请号：US13242329

申请日：2011-09-23

申请人： Makoto Agatani ,  Toshio Hata ,  Tomokazu Nada ,  Shinya Ishizaki

发明人： Makoto Agatani ,  Toshio Hata ,  Tomokazu Nada ,  Shinya Ishizaki

IPC分类号： H01L33/62 ,  H01L27/00 ,  F21V23/06 ,  F21K99/00 ,  H05K1/11 ,  H01L25/075 ,  H01L33/52

CPC分类号： H01L25/0753 ,  F21K9/00 ,  F21K9/232 ,  F21V23/06 ,  F21Y2101/00 ,  F21Y2105/10 ,  F21Y2115/10 ,  H01L33/483 ,  H01L33/52 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/01327 ,  H01L2933/0066 ,  H05K1/11 ,  H05K2201/0391 ,  H05K2201/094 ,  H05K2201/0979 ,  H05K2201/10106 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting device capable of ensuring an electric connection between a light-emitting element and an electrode without generating any problem in practical use, by both connecting methods with a solder and a connector, and a lighting device provided with the light-emitting device are provided. The light-emitting device according to the present invention has a plurality of LED chips, and a soldering electrode land and a connector connecting electrode land electrically connected to the chips, on a ceramic substrate. The soldering electrode land is formed of a first conductive material having a function to prevent diffusion to a solder, and the connector connecting electrode land is formed of a second conductive material having a function to prevent oxidation.

摘要翻译： 一种能够确保发光元件和电极之间的电连接而不会在实际使用中产生任何问题的发光装置，通过两种连接方法与焊料和连接器，以及设置有发光装置的照明装置 被提供。 根据本发明的发光装置在陶瓷基板上具有多个LED芯片，以及焊接电极焊盘和与芯片电连接的连接器连接电极焊盘。 焊接电极焊盘由具有防止向焊料扩散的功能的第一导电材料形成，并且连接器连接电极焊盘由具有防止氧化功能的第二导电材料形成。

公开(公告)号：US08735914B2

公开(公告)日：2014-05-27

申请号：US13108244

申请日：2011-05-16

申请人： Makoto Agatani ,  Toshio Hata ,  Tomokazu Nada ,  Toyonori Uemura ,  Shinya Ishizaki

发明人： Makoto Agatani ,  Toshio Hata ,  Tomokazu Nada ,  Toyonori Uemura ,  Shinya Ishizaki

IPC分类号： H01L29/20 ,  H01L33/00 ,  H01L29/18 ,  F21V9/16 ,  F21S4/00 ,  F21V21/00

CPC分类号： H01L25/0753 ,  H01L33/504 ,  H01L33/62 ,  H01L2224/48137 ,  H01L2924/3025 ,  H01L2924/00

摘要： A light emitting device is a light emitting device using light emitting elements and includes: a substrate; a resin frame provided circularly on the substrate; a resin wall provided on the substrate so as to partition an area surrounded by the resin frame into 2 zones; light-emitting sections (a first light-emitting section: blue LEDs+red fluorescent material, a second light-emitting section: blue LEDs+yellow fluorescent material) provided in the respective zones, each of which light-emitting sections includes at least one light emitting element; and first and second anode electrodes and a cathode electrode provided so that each of the light-emitting sections receives current via a corresponding anode electrode and the cathode electrode, the light-emitting sections emitting respective pieces of light each having at least one color, which respective pieces of light have different colors from each other, the first and second anode electrodes being electrically connected to the first and second light-emitting sections, respectively. With the arrangement, which can increase an integration degree, it is possible to achieve a high color rendering property and an excellent color mixing property, to easily adjust a chromaticity, and to easily generate light with a desired chromaticity.

摘要翻译： 发光器件是使用发光元件的发光器件，包括：衬底; 在基板上圆形设置的树脂框架; 设置在所述基板上以将由所述树脂框架包围的区域分隔成2个区域的树脂壁; 设置在各个区域中的发光部（第一发光部：蓝色LED +红色荧光材料，第二发光部：蓝色LED +黄色荧光材料），每个发光部包括至少一个 发光元件; 以及第一和第二阳极电极和设置成使得每个发光部分经由相应的阳极电极和阴极电极接收电流的阴极，发光部分发射各自具有至少一种颜色的光，其中 各个光线彼此具有不同的颜色，第一和第二阳极电极分别电连接到第一和第二发光部分。 通过能够提高积分度的结构，可以实现高显色性和优异的混色性，容易地调节色度，并且容易产生具有期望色度的光。