公开(公告)号：US11367799B2

公开(公告)日：2022-06-21

申请号：US16740900

申请日：2020-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyoung Lee ,  Jinseong Heo ,  Jaeho Lee ,  Haeryong Kim ,  Seongjun Park ,  Hyeonjin Shin ,  Eunkyu Lee ,  Sanghyun Jo

IPC: H01L31/0216 ,  H01L31/0304 ,  G01N21/59 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/18

Abstract: A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.

公开(公告)号：US11222953B2

公开(公告)日：2022-01-11

申请号：US16662872

申请日：2019-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Hyeonjin Shin ,  Dongwook Lee ,  Seongjun Park ,  Kiyoung Lee ,  Eunkyu Lee ,  Sanghyun Jo ,  Jinseong Heo

IPC: H01L31/0352 ,  H01L29/16 ,  H01L31/09 ,  H01L31/028 ,  H01L31/101 ,  H01L51/05 ,  H01L51/00 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L29/12 ,  H01L27/30

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US11180373B2

公开(公告)日：2021-11-23

申请号：US16183146

申请日：2018-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae Song ,  Keunwook Shin ,  Hyeonjin Shin ,  Changseok Lee ,  Changhyun Kim ,  Kyungeun Byun ,  Seungwon Lee ,  Eunkyu Lee

IPC: H01L23/00 ,  C01B32/186 ,  H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  C23C16/26 ,  C23C16/50 ,  H01L27/24 ,  C01B32/182 ,  B82Y30/00 ,  B82Y40/00

Abstract: Provided are nanocrystalline graphene and a method of forming the nanocrystalline graphene through a plasma enhanced chemical vapor deposition process. The nanocrystalline graphene may have a ratio of carbon having an sp2 bonding structure to total carbon within the range of about 50% to 99%. In addition, the nanocrystalline graphene may include crystals having a size of about 0.5 nm to about 100 nm.

公开(公告)号：US10937885B2

公开(公告)日：2021-03-02

申请号：US16259038

申请日：2019-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Yunseong Lee ,  Sanghyun Jo ,  Keunwook Shin ,  Hyeonjin Shin

IPC: H01L29/51 ,  H01L21/02

Abstract: Provided are electronic devices and methods of manufacturing the same. An electronic device may include a substrate, a gate electrode on the substrate, a ferroelectric layer between the substrate and the gate electrode, and a carbon layer between the substrate and the ferroelectric layer. The carbon layer may have an sp2 bonding structure.

公开(公告)号：US10928723B2

公开(公告)日：2021-02-23

申请号：US16708969

申请日：2019-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Hyunjae Song ,  Seongjun Park ,  Keunwook Shin ,  Changseok Lee ,  Dongwook Lee ,  Minsu Seol ,  Sangwon Kim ,  Seongjun Jeong

IPC: G03F1/64 ,  G03F1/62 ,  G03F1/22

Abstract: A pellicle for a photomask, a reticle including the same, and an exposure apparatus for lithography are provided. The pellicle may include a pellicle membrane, and the pellicle membrane may include nanocrystalline graphene. The nanocrystalline graphene may have defects. The nanocrystalline graphene may include a plurality of nanoscale crystal grains, and the nanoscale crystal grains may include a two-dimensional (2D) carbon structure having an aromatic ring structure. The defects of the nanocrystalline graphene may include at least one of an sp3 carbon atom, an oxygen atom, a nitrogen atom, or a carbon vacancy.

公开(公告)号：US10861996B2

公开(公告)日：2020-12-08

申请号：US16232489

申请日：2018-12-26

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation SUNGKYUNKWAN UNIVERSITY

Inventor： Sanghyun Jo ,  Heejun Yang ,  Geunwoo Hwang ,  Hyeonjin Shin

IPC: H01L31/112 ,  H01L31/109 ,  H01L31/032 ,  H01L31/0224 ,  G06K9/00 ,  H01L31/101 ,  H01L31/113

Abstract: A near infrared light sensor includes a 2D material semiconductor layer on a substrate, a tunneling layer on the 2D material semiconductor layer, and first and second electrodes on opposite edge regions of an upper surface of the tunneling layer. The 2D material semiconductor layer may be a TMDC layer having a thickness in a range of about 10 nm to about 100 nm. The tunneling layer and the substrate may each include hBN.

公开(公告)号：US10850985B2

公开(公告)日：2020-12-01

申请号：US16233513

申请日：2018-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Alum Jung ,  Keunwook Shin ,  Kyung-Eun Byun ,  Hyeonjin Shin ,  Hyunseok Lim ,  Seunggeol Nam ,  Hyunjae Song ,  Yeonchoo Cho

IPC: H01L29/12 ,  C01B32/186 ,  C23C16/26 ,  C23C16/505 ,  C23C16/511 ,  H01L21/02 ,  H01L29/16 ,  H01L29/06 ,  H01L29/04

Abstract: A method of forming nanocrystalline graphene by a plasma-enhanced chemical vapor deposition process is provided. The method of forming nanocrystalline graphene includes arranging a protective layer on a substrate and growing nanocrystalline graphene directly on the protective layer by using a plasma of a reaction gas. The reaction gas may include a mixed gas of a carbon source gas, an inert gas, and hydrogen gas.

公开(公告)号：US10808142B2

公开(公告)日：2020-10-20

申请号：US15925034

申请日：2018-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwon Kim ,  Minsu Seol ,  Hyeonjin Shin ,  Dongwook Lee ,  Yunseong Lee ,  Seongjun Jeong ,  Alum Jung

IPC: H01L21/027 ,  C09D165/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  H01L21/311 ,  C01B32/184 ,  G03F7/09 ,  C01B32/182 ,  C08G61/02 ,  B82Y40/00 ,  B82Y30/00

Abstract: Provided are a method of preparing a graphene quantum dot, a graphene quantum dot prepared using the method, a hardmask composition including the graphene quantum dot, a method of forming a pattern using the hardmask composition, and a hardmask obtained from the hardmask composition. The method of preparing a graphene quantum dot includes reacting a graphene quantum dot composition and an including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250° C. The polyaromatic hydrocarbon compound may include at least four aromatic rings.

公开(公告)号：US10790356B2

公开(公告)日：2020-09-29

申请号：US16152576

申请日：2018-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Haeryong Kim ,  Hyeonjin Shin ,  Seunggeol Nam ,  Seongjun Park

IPC: H01L29/08 ,  H01L29/417 ,  H01L29/04 ,  H01L29/06 ,  H01L29/267 ,  H01L29/78 ,  H01L21/285 ,  H01L29/45 ,  H01L29/16 ,  H01L29/165

Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.

公开(公告)号：US10741389B2

公开(公告)日：2020-08-11

申请号：US16012938

申请日：2018-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haeryong Kim ,  Hyeonjin Shin ,  Jaeho Lee ,  Sanghyun Jo

IPC: H01L21/20 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L29/778 ,  H01L29/24

Abstract: A method of growing a two-dimensional transition metal dichalcogenide (TMD) thin film and a method of manufacturing a device including the two-dimensional TMD thin film are provided. The method of growing the two-dimensional TMD thin film may include a precursor supply operation and an evacuation operation, which are periodically and repeatedly performed in a reaction chamber provided with a substrate for thin film growth. The precursor supply operation may include supplying two or more kinds of precursors of a TMD material to the reaction chamber. The evacuation operation may include evacuating the two or more kinds of precursors and by-products generated therefrom from the reaction chamber.