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    Wafer dicing using hybrid laser scribing and plasma etch approach with mask application by vacuum lamination
    83.
    发明授权
    Wafer dicing using hybrid laser scribing and plasma etch approach with mask application by vacuum lamination 有权
    使用混合激光划线和等离子体蚀刻方法的薄片切割，通过真空层压法进行掩模应用

    公开(公告)号：US09142459B1

    公开(公告)日：2015-09-22

    申请号：US14320426

    申请日：2014-06-30

    申请人： Prabhat Kumar ,  Wei-Sheng Lei ,  Brad Eaton ,  Ajay Kumar

    发明人： Prabhat Kumar ,  Wei-Sheng Lei ,  Brad Eaton ,  Ajay Kumar

    IPC分类号： H01L21/00 ,  H01L21/822 ,  H01L21/033 ,  H01L21/02

    CPC分类号： H01L21/0337 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/78

    摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves applying an adhesive layer to a front side of the semiconductor wafer. A mask layer is laminated onto the front side of the semiconductor wafer, the mask layer covering and protecting the integrated circuits. The adhesive layer adheres the mask layer to the front side of the semiconductor wafer. The mask layer is patterned with a laser scribing process to provide gaps in the mask layer, the gaps exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is plasma etched through the gaps in the mask layer to singulate the integrated circuits.

    摘要翻译： 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 在一个示例中，对具有多个集成电路的半导体晶片进行切割的方法包括将粘合剂层施加到半导体晶片的正面。 掩模层被层叠在半导体晶片的前侧，掩模层覆盖并保护集成电路。 粘合剂层将掩模层粘附到半导体晶片的正面。 通过激光划线工艺对掩模层进行构图，以在掩模层中提供间隙，在半导体晶片的间隙暴露在集成电路之间。 通过掩模层中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

    Hybrid dicing process using a blade and laser
    84.
    发明授权
    Hybrid dicing process using a blade and laser 有权
    使用刀片和激光的混合切割工艺

    公开(公告)号：US09130057B1

    公开(公告)日：2015-09-08

    申请号：US14320405

    申请日：2014-06-30

    申请人： Prabhat Kumar ,  Wei-Sheng Lei ,  James Papanu ,  Brad Eaton ,  Ajay Kumar

    发明人： Prabhat Kumar ,  Wei-Sheng Lei ,  James Papanu ,  Brad Eaton ,  Ajay Kumar

    IPC分类号： H01L21/822 ,  H01L21/67 ,  B23K26/00 ,  B26D9/00

    CPC分类号： B26D9/00 ,  B23K26/0624 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  B23K2103/54 ,  B26D3/06 ,  B28D5/022 ,  H01L21/67092 ,  H01L21/78

    摘要： A method and system of hybrid dicing using a blade and laser are described. In one embodiment, a method involves focusing a laser beam inside the substrate in regions between the integrated circuits, inducing defects inside the substrate in the regions. The method also involves forming a groove on a surface of the substrate with a blade saw in the regions. The method further involves singulating the integrated circuits at the regions with the induced defects and the groove. In one embodiment, a system includes a laser module configured to focus a laser beam inside the substrate in regions between the integrated circuits, inducing defects inside the substrate in the regions. A blade grooving module is configured to form a groove in a surface of the substrate with a blade saw in the regions.

    摘要翻译： 描述了使用刀片和激光器的混合切割的方法和系统。 在一个实施例中，一种方法包括将集成电路之间的区域内的激光束聚焦在衬底内，从而在区域内的衬底内引起缺陷。 该方法还涉及在该区域中具有刀片锯的基板的表面上形成凹槽。 该方法还涉及在具有感应缺陷和凹槽的区域处分离集成电路。 在一个实施例中，系统包括激光模块，该激光模块被配置为将集成电路之间的区域内的激光束聚焦在衬底内，从而在该区域内的衬底内引起缺陷。 刀片切槽模块被配置为在所述区域中具有刀片锯的基板的表面中形成凹槽。

    SCREEN PRINT MASK FOR LASER SCRIBE AND PLASMA ETCH WAFER DICING PROCESS
    85.
    发明申请
    SCREEN PRINT MASK FOR LASER SCRIBE AND PLASMA ETCH WAFER DICING PROCESS 有权
    用于激光扫描和等离子体蚀刻抛光过程的屏幕打印面罩

    公开(公告)号：US20150162243A1

    公开(公告)日：2015-06-11

    申请号：US14099707

    申请日：2013-12-06

    申请人： Prabhat Kumar ,  Brad Eaton ,  Wei-Sheng Lei ,  James S. Papanu ,  Ajay Kumar

    发明人： Prabhat Kumar ,  Brad Eaton ,  Wei-Sheng Lei ,  James S. Papanu ,  Ajay Kumar

    IPC分类号： H01L21/78 ,  H01L21/3065 ,  B41F15/08 ,  H01J37/32 ,  H01L21/67 ,  H01L21/304 ,  B23K26/36

    CPC分类号： H01L21/78 ,  B23K26/364 ,  B41F15/08 ,  H01J37/32091 ,  H01J37/321 ,  H01J2237/334 ,  H01L21/3043 ,  H01L21/3065 ,  H01L21/67207

    摘要： Methods of using a screen-print mask for hybrid wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits separated by streets involves screen-printing a patterned mask above the semiconductor wafer, the patterned mask covering the integrated circuits and exposing the streets of the semiconductor wafer. The method also involves laser ablating the streets with a laser scribing process to expose regions of the semiconductor wafer between the integrated circuits. The method also involves plasma etching the semiconductor wafer through the exposed regions of the semiconductor wafer to singulate the integrated circuits. The patterned mask protects the integrated circuits during the plasma etching.

    摘要翻译： 使用激光划线和等离子体蚀刻使用用于混合晶片切割的丝网印刷掩模的方法。 在一个示例中，对具有由街道分开的多个集成电路进行切割的半导体晶片的方法涉及在半导体晶片之上丝网印刷图案化掩模，该图案化掩模覆盖集成电路并暴露半导体晶片的街道。 该方法还涉及通过激光划线工艺激光烧蚀街道，以暴露集成电路之间的半导体晶片的区域。 该方法还包括通过半导体晶片的暴露区域等离子体蚀刻半导体晶片以对集成电路进行分离。 图案化掩模在等离子体蚀刻期间保护集成电路。

    NIOBIUM BASED ALLOY THAT IS RESISTANT TO AQUEOUS CORROSION
    87.
    发明申请
    NIOBIUM BASED ALLOY THAT IS RESISTANT TO AQUEOUS CORROSION 审中-公开
    基于NIOBIUM的合金可以抵抗水性腐蚀

    公开(公告)号：US20110008201A1

    公开(公告)日：2011-01-13

    申请号：US12498770

    申请日：2009-07-07

    申请人： Paul R. Aimone ,  Prabhat Kumar

    发明人： Paul R. Aimone ,  Prabhat Kumar

    IPC分类号： C22C27/02 ,  C22B9/22 ,  C22B9/20

    CPC分类号： C22B34/24 ,  C22B9/20 ,  C22B9/226 ,  C22B9/228 ,  C22C27/02

    摘要： A niobium or niobium alloy which contains pure or substantially pure niobium and at least one metal element selected from the group consisting of Ru, Rh, Pd, Os, Ir, Pt, Mo, W and Re to form a niobium alloy that is resistant to aqueous corrosion. The invention also relates to the process of preparing the niobium alloy.

    摘要翻译： 一种铌或铌合金，其含有纯的或基本上纯的铌和至少一种选自Ru，Rh，Pd，Os，Ir，Pt，Mo，W和Re的金属元素，以形成铌合金， 含水腐蚀。 本发明还涉及制备铌合金的方法。

    Refractory metal and alloy refining by laser forming and melting
    90.
    发明授权
    Refractory metal and alloy refining by laser forming and melting 有权
    耐火金属和合金精炼通过激光成形和熔化

    公开(公告)号：US07651658B2

    公开(公告)日：2010-01-26

    申请号：US10501837

    申请日：2003-01-22

    申请人： Paul R. Aimone ,  Prabhat Kumar ,  Peter R. Jepson

    发明人： Paul R. Aimone ,  Prabhat Kumar ,  Peter R. Jepson

    IPC分类号： B22F5/00 ,  B23K26/32

    CPC分类号： B22F5/00 ,  C23C14/3414 ,  C23C24/10

    摘要： A process to chemically refine and consolidate tantalum, niobium and their alloys to a fabricated product of net shape or near-net shape with higher throughput, more consistency, and lower manufacturing costs compared to prior art routes or rejuvenate damaged and deteriorated refractory metal parts. Powder metal is loaded into hoppers to be fed into laser forming/melting equipment. A suitable substrate is loaded into a laser forming/melting chamber onto which the powder will be deposited and consolidated in a point-scan process. As the powder is fed onto successive points of the surface of the substrate in linear traces, the laser is used to heat and partially melt the substrate and completely melt the powder. A combined deposition and melt beam traces the substrate surface repeatedly over a selected area to build up a dense coating of controlled microstructure in multiple layers. A fully dense deposit is built up that becomes the desired shape.

    摘要翻译： 与现有技术路线相比，将钽，铌及其合金化学改善和固结成网状或近净形状的制造产品，具有更高的生产能力，更高的一致性和更低的制造成本，或者使受损和劣化的难熔金属部件恢复活力。 将粉末金属装入料斗中以供入激光成形/熔化设备。 合适的基底被加载到激光成形/熔化室中，粉末将在其中沉积并在点扫描过程中固结到其上。 当粉末以线性迹线供给到基底表面的连续点时，激光用于加热和部分熔化基底并完全熔化粉末。 组合的沉积和熔体束在选择的区域上重复地跟踪衬底表面，以在多层中建立受控微结构的致密涂层。 建立了一个完全致密的沉积物，成为所需的形状。