公开(公告)号：US6108481A

公开(公告)日：2000-08-22

申请号：US16411

申请日：1998-01-30

申请人： Masaki Tohyama ,  Masahisa Funemizu ,  Yuzo Hirayama

发明人： Masaki Tohyama ,  Masahisa Funemizu ,  Yuzo Hirayama

IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/30 ,  G02B6/42

CPC分类号： G02B6/12004 ,  G02B6/1228 ,  G02B6/305 ,  G02B6/4207

摘要： In order to realize an optical semiconductor device having a window structure promising high-speed operation and highly efficient coupling with optical fibers and to realize its manufacturing method, the device has a window structure in which an optical guide layer is partly removed near the emission facet to decrease the facet reflectivity. Since a cladding layer has a narrow mesa structure also in a window region, the parasitic capacitance can be reduced, and high-speed modulation is ensured. Although light runs through the window region in spread directions from one end of the optical guide layer toward the emission facet, the cladding layer changes its width or thickness in accordance with the spread angle of light. Therefore, light is not reflected or scattered by side surfaces of the cladding layer, and prevents a decrease in optical output due to a scattering loss, or a deterioration in distribution of emitted light. As a result, the device has a high coupling efficiency with optical fibers, and is operative for high optical output.

摘要翻译： 为了实现具有有希望的高速操作的窗口结构和与光纤的高效耦合的窗口结构并实现其制造方法的光学半导体器件，该器件具有窗口结构，其中光导层在发射面附近被部分去除 以减小刻面反射率。 由于覆盖层在窗口区域中也具有窄的台面结构，所以可以减小寄生电容，并且确保高速调制。 虽然光沿着从导光层的一端朝向发射面的扩展方向穿过窗口区域，但是包层根据光的扩展角度改变其宽度或厚度。 因此，光不会被包层的侧面反射或散射，并且防止由于散射损失导致的光输出的降低或发射光的分布的劣化。 结果，该装置与光纤具有高耦合效率，并且可用于高光输出。

公开(公告)号：US6043515A

公开(公告)日：2000-03-28

申请号：US931523

申请日：1997-09-16

申请人： Yuzo Kamiguchi ,  Yuzo Hirayama ,  Masashi Sahashi

发明人： Yuzo Kamiguchi ,  Yuzo Hirayama ,  Masashi Sahashi

IPC分类号： G02F3/02 ,  H01S5/04 ,  H01S5/042 ,  H01S5/06 ,  H01S5/323 ,  H01L33/00 ,  H01S3/091 ,  H01S3/19

CPC分类号： H01S5/041 ,  B82Y20/00 ,  H01S5/0425 ,  G02F3/026 ,  H01S2301/173 ,  H01S5/0607 ,  H01S5/32341 ,  H01S5/3404

摘要： An optical semiconductor device has a structure in which a semiconductor active layer is sandwiched by a p-type semiconductor cladding layer and an n-type semiconductor cladding layer and a p-type contact layer is formed on the p-type semiconductor cladding layer side and an n-type contact layer is formed on the n-type semiconductor cladding layer side, wherein two ferromagnetic layers are formed on the n-type contact layer and two ferromagnetic layers are formed on the p-type contact layer. Magnetization directions of a pair of ferromagnetic layers vertically opposed to each other are set to be parallel to each other, and the magnetization directions of adjacent ferromagnetic layers are inverted to each other.

摘要翻译： 光半导体器件具有这样的结构，其中半导体有源层被p型半导体包层和n型半导体包覆层夹在中间，p型接触层形成在p型半导体包层侧， 在n型半导体包层侧形成n型接触层，其中在n型接触层上形成两个铁磁层，并在p型接触层上形成两个铁磁层。 将彼此垂直相对的一对铁磁层的磁化方向设定为彼此平行，并且相邻的铁磁层的磁化方向相互反转。

公开(公告)号：US5889913A

公开(公告)日：1999-03-30

申请号：US614649

申请日：1996-03-13

申请人： Masaki Tohyama ,  Yuzo Hirayama

发明人： Masaki Tohyama ,  Yuzo Hirayama

IPC分类号： G02B6/12 ,  G02F1/025 ,  H01S5/026 ,  H01S5/042 ,  H01S5/227 ,  G02B6/10

CPC分类号： G02B6/12004 ,  G02F1/025 ,  H01S5/227 ,  G02B2006/12121 ,  G02B2006/12142 ,  G02B2006/12173 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/2275 ,  H01S5/3072

摘要： This invention provides an optical semiconductor device including a semiconductor substrate having a mesa stripe in which at least an optical waveguide layer is formed, a major surface of the semiconductor substrate being a crystal plane, a semiconductor buried layer formed on the two side surfaces of the mesa stripe, and a stripe cladding layer formed on the mesa stripe region and the semiconductor buried layer and having a shape whose section is substantially trapezoidal and whose side surfaces are crystal planes.

摘要翻译： 本发明提供一种光半导体装置，其包括具有台面条状的半导体基板，至少形成有光波导层，半导体基板的主表面为晶面，半导体掩埋层形成在 台阶条纹，以及形成在台面条状区域和半导体掩埋层上的条状包覆层，并且具有截面基本上梯形且侧面为晶面的形状。

公开(公告)号：US5253264A

公开(公告)日：1993-10-12

申请号：US800250

申请日：1991-11-29

申请人： Nobuo Suzuki ,  Yuzo Hirayama ,  Masaaki Onomura

发明人： Nobuo Suzuki ,  Yuzo Hirayama ,  Masaaki Onomura

IPC分类号： H01S5/06 ,  H01S5/062 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/227 ,  H01S5/34313 ,  H01S5/0618 ,  H01S5/06226 ,  H01S5/12 ,  H01S5/2059 ,  H01S5/2205 ,  H01S5/2275 ,  H01S5/34306

摘要： A semiconductor laser of multiple quantum well structure includes a multiple quantum well active layer having a well layer of In.sub.x Ga.sub.1-x As (0

公开(公告)号：US5084410A

公开(公告)日：1992-01-28

申请号：US257519

申请日：1988-10-14

申请人： Kazuhiro Eguchi ,  Tetsuo Sadamasa ,  Hideto Furuyama ,  Yuzo Hirayama

发明人： Kazuhiro Eguchi ,  Tetsuo Sadamasa ,  Hideto Furuyama ,  Yuzo Hirayama

IPC分类号： H01L21/20 ,  H01L29/04 ,  H01L29/10 ,  H01L31/105 ,  H01L33/00 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01L21/02639 ,  H01L21/02392 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/1029 ,  H01L31/105 ,  H01L33/0062 ,  H01S5/2203 ,  H01S5/227 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/32391 ,  Y10S438/973

摘要： A semiconductor device which comprises a semiconductor substrate having a surface orientation substantially in a {100}-orientation is provided. On the semiconductor substrate, plural steps formed in a direction deviated substantially from a -direction by 5 degrees or more are formed. The steps, which are mesa and concave portions, are buried by plural semiconductor crystal layers grown by the use of MOCVD or the like. A method of manufacturing such a device is also provided.

公开(公告)号：US4958202A

公开(公告)日：1990-09-18

申请号：US382345

申请日：1989-07-20

申请人： Jun'ichi Kinoshita ,  Motoyasu Morinaga ,  Hideto Furuyama ,  Yuzo Hirayama

发明人： Jun'ichi Kinoshita ,  Motoyasu Morinaga ,  Hideto Furuyama ,  Yuzo Hirayama

IPC分类号： H01S5/227

CPC分类号： H01S5/227 ,  H01S5/2277 ,  Y10S148/05 ,  Y10S148/051 ,  Y10S148/066 ,  Y10S148/095 ,  Y10T29/413

摘要： An active layer is formed on an n-type InP buffer layer of a substrate. A pair of strip-shaped grooves are formed into the active layer to divide it into a contract portion and side portions. A p-type InP cladding layer is deposited on the entire surface of the active layer and grooves. The cladding layer is selectively etched to form a mesa portion including the central active portion and expose the buffer layer. An insulating film is coated on the mesa portion and buffer layer, so that a semiconductor light-emitting device is manufactured.

公开(公告)号：US07736005B2

公开(公告)日：2010-06-15

申请号：US11896890

申请日：2007-09-06

申请人： Tatsuo Saishu ,  Yuzo Hirayama

发明人： Tatsuo Saishu ,  Yuzo Hirayama

IPC分类号： G03B21/00 ,  G03B27/22 ,  H04N15/00 ,  G09G5/00

CPC分类号： G03B35/24 ,  G02B27/2214 ,  H04N13/305 ,  H04N13/31

摘要： In a one-dimensional IP (vertical disparity discarding system), it is made possible to obtain a perspective projection image with no distortion or reduced distortion. A stereoscopic display device is provided with a display device including a display plane in which pixels are arranged flatly in a matrix shape; and a parallax barrier including a plurality of apertures or a plurality of lenses and being configured to control directions of rays from the pixels such that a horizontal disparity is included but a vertical disparity is not included. A horizontal direction pitch of the parallax barrier is integer times a horizontal pitch of the pixels, the display plane of the display device is divided so as to correspond to elemental images for respective apertures or the lenses of the parallax barrier, and an image whose vertical direction corresponds to a perspective projection in a fixed viewing distance and whose horizontal direction corresponds to an orthographic projection is divided and arranged for respective columns of the pixels.

公开(公告)号：US20080055547A1

公开(公告)日：2008-03-06

申请号：US11896890

申请日：2007-09-06

申请人： Tatsuo Saishu ,  Yuzo Hirayama

发明人： Tatsuo Saishu ,  Yuzo Hirayama

IPC分类号： G02B27/22 ,  G03B21/00

CPC分类号： G03B35/24 ,  G02B27/2214 ,  H04N13/305 ,  H04N13/31

摘要： In a one-dimensional IP (vertical disparity discarding system), it is made possible to obtain a perspective projection image with no distortion or reduced distortion. A stereoscopic display device is provided with a display device including a display plane in which pixels are arranged flatly in a matrix shape; and a parallax barrier including a plurality of apertures or a plurality of lenses and being configured to control directions of rays from the pixels such that a horizontal disparity is included but a vertical disparity is not included. A horizontal direction pitch of the parallax barrier is integer times a horizontal pitch of the pixels, the display plane of the display device is divided so as to correspond to elemental images for respective apertures or the lenses of the parallax barrier, and an image whose vertical direction corresponds to a perspective projection in a fixed viewing distance and whose horizontal direction corresponds to an orthographic projection is divided and arranged for respective columns of the pixels.

摘要翻译： 在一维IP（垂直视差丢弃系统）中，可以获得没有失真或减小的失真的透视投影图像。 立体显示装置具有显示装置，显示装置包括像素以矩阵形状排列的显示面; 以及视差屏障，其包括多个孔或多个透镜，并被配置为控制来自像素的光线的方向，使得包括水平视差，但不包括垂直视差。 视差屏障的水平方向间距是像素的水平间距的整数倍，显示装置的显示面被分割成与各个孔径的基本图像或视差屏障的透镜对应，垂直方向的图像 方向对应于固定观看距离中的透视投影，并且其水平方向对应于正投影，被划分并布置用于各个像素列。

公开(公告)号：US06586775B2

公开(公告)日：2003-07-01

申请号：US09531490

申请日：2000-03-20

申请人： Yuzo Hirayama

发明人： Yuzo Hirayama

IPC分类号： H01L2915

CPC分类号： G02B6/1225 ,  B82Y20/00 ,  H01J63/04 ,  H01K1/08 ,  H01K1/10 ,  H01K1/14 ,  H01K1/28

摘要： A light emitting device which emits visible light through heat radiation of a tungsten filament. Photonic crystal structures in each of which Ag spheres are arranged in a TiO2 film are provided around the filament. Whereas radiation of infrared light from the filament is suppressed, radiation of visible light is enhanced.

摘要翻译： 一种通过钨丝的热辐射发射可见光的发光装置。 在所述长丝周围设置有在TiO 2膜中排列有Ag球的光子晶体结构。 而来自灯丝的红外光的辐射被抑制，可见光的辐射增强。

公开(公告)号：US4862474A

公开(公告)日：1989-08-29

申请号：US198866

申请日：1988-05-26

申请人： Motoyasu Morinaga ,  Hideto Furuyama ,  Masaru Nakamura ,  Nobuo Suzuki ,  Yuzo Hirayama ,  Hajime Okuda

发明人： Motoyasu Morinaga ,  Hideto Furuyama ,  Masaru Nakamura ,  Nobuo Suzuki ,  Yuzo Hirayama ,  Hajime Okuda

IPC分类号： H01S5/02 ,  H01S5/026 ,  H01S5/042 ,  H01S5/227 ,  H01S5/323

CPC分类号： H01S5/026 ,  H01S5/0422 ,  H01S5/227 ,  H01S5/0208 ,  H01S5/0425 ,  H01S5/2275 ,  H01S5/2277 ,  H01S5/32391

摘要： A semiconductor laser device comprises a substrate having an n-type buffer layer, a semiconductor laser element and auxiliary element, provided side by side on the buffer layer. The semiconductor laser element includes a mesa portion having a p-type low resistant semiconductor region provided above the buffer layer, an active region consisting of a semiconductor formed on the buffer layer and low resistant region, a pair of buried portions integrally formed with the low resistive region and formed on and contiguous to opposite sides of the active region in the width direction. A lateral hole is provided between the buffer layer and low resistive region on the side of buried portion. The auxiliary element includes a high resistive regions integrally formed with the low resistant region and positioned on the sides of low resistive region.