公开(公告)号：US08328928B2

公开(公告)日：2012-12-11

申请号：US13055747

申请日：2009-07-08

申请人： Toru Maeda ,  Tetsuro Tanikawa ,  Akinobu Teramoto ,  Masaaki Oda

发明人： Toru Maeda ,  Tetsuro Tanikawa ,  Akinobu Teramoto ,  Masaaki Oda

IPC分类号： C09D11/00 ,  H01B1/02

CPC分类号： B22F1/0062 ,  B22F2999/00 ,  H01L21/4867 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/75 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/111 ,  H01L2224/11318 ,  H01L2224/1152 ,  H01L2224/1329 ,  H01L2224/13324 ,  H01L2224/13339 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13355 ,  H01L2224/13364 ,  H01L2224/13369 ,  H01L2224/13399 ,  H01L2224/16 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75745 ,  H01L2224/75753 ,  H01L2224/81097 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8184 ,  H01L2225/06513 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01067 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  B22F1/0018 ,  H01L2924/00014 ,  H01L2924/00

摘要： Metal nanoink (100) for bonding an electrode of a semiconductor die and an electrode of a substrate and/or bonding an electrode of a semiconductor die and an electrode of another semiconductor die by sintering under pressure is produced by injecting oxygen into an organic solvent (105) in the form of oxygen nanobubbles (125) or oxygen bubbles (121) either before or after metal nanoparticles (101) whose surfaces are coated with a dispersant (102) are mixed into the organic solvent (105). Bumps are formed on the electrode of the semiconductor die and the electrode of the substrate by ejecting microdroplets of the metal nanoink (100) onto the electrodes, the semiconductor die is turned upside down and overlapped in alignment over the substrate, and then, the metal nanoparticles of the bumps are sintered under pressure by pressing and heating the bumps between the electrodes. As a result, generation of voids during sintering under pressure is minimized.

摘要翻译： 通过将氧气注入到有机溶剂中来制造用于将半导体管芯的电极和基板的电极接合和/或接合半导体管芯的电极和另一个半导体管芯的电极的金属纳米管（100） 在其表面涂布有分散剂（102）的金属纳米颗粒（101）之前或之后，将氧纳米气泡（125）或氧气（121）的形式混合到有机溶剂（105）中。 通过将金属纳米线（100）的微滴喷射到电极上，在半导体管芯的电极和基板的电极上形成凸起，将半导体管芯上下颠倒并重叠在衬底上，然后将金属 通过按压和加热电极之间的凸块，在凸起的纳米颗粒被烧结。 结果，在压力下烧结过程中产生的空隙被最小化。

公开(公告)号：US08299529B2

公开(公告)日：2012-10-30

申请号：US12881652

申请日：2010-09-14

申请人： Satoru Takasawa ,  Satoru Ishibashi ,  Tadashi Masuda

发明人： Satoru Takasawa ,  Satoru Ishibashi ,  Tadashi Masuda

IPC分类号： H01L27/01 ,  H01L21/00

CPC分类号： H01L23/53238 ,  H01L23/53233 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metallic wiring film, which is not exfoliated even when exposed to plasma of hydrogen, is provided. A metallic wiring film is constituted by an adhesion layer in which Al is added to copper and a metallic low-resistance layer which is disposed on the adhesion layer and made of pure copper. When a copper alloy including Al and oxygen are included in the adhesion layer and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer and the silicon layer even when being exposed to the hydrogen plasma, which prevents the occurrence of exfoliation between the adhesion layer and the silicon layer. If the amount of Al increases, since widths of the adhesion layer and the metallic low-resistance layer largely differ after etching, the maximum addition amount for permitting the etching to be performed is the upper limit.

摘要翻译： 提供即使暴露于氢等离子体时也不会剥离的金属布线膜。 金属布线膜由其中添加有Al的粘合层和设置在粘合层上并由纯铜制成的金属低电阻层构成。 当包含Al和氧的铜合金包括在粘合层中并且由其形成源电极和漏电极时，即使当暴露于氢等离子体时，铜也不会在粘附层和硅层之间的界面处析出 ，其防止粘附层和硅层之间的剥离的发生。 如果Al的量增加，由于粘合层和金属低电阻层的宽度在蚀刻之后大大不同，所以允许进行蚀刻的最大添加量是上限。

公开(公告)号：US08262798B2

公开(公告)日：2012-09-11

申请号：US10911639

申请日：2004-08-05

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/52 ,  C23C16/455 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4557 ,  C23C16/4411 ,  C23C16/45565 ,  C23C16/45572

摘要： The present invention herein provides a shower head whose temperature can be controlled in consideration of the film-forming conditions selected and a thin film-manufacturing device which permits the stable and continuous formation of thin films including only a trace amount of particles while reproducing a good film thickness distribution and compositional distribution, and a high film-forming rate and which is excellent in the productivity and the mass-producing ability as well as a method for the preparation of such a film. The shower head is so designed that the shower head structure is incorporated into an upper cap of a film-forming vessel, that a heat-exchange means is disposed in the upper cap to thus control the temperature of the upper cap and to in turn allow heat-exchange to occur at the contact surface between a disk-like shower plate constituting the shower head surface and the upper cap and that the temperature of the shower head can be controlled in consideration of the film-forming conditions selected. A thin film-manufacturing device is equipped with the shower head in its film-forming vessel and a thin film is prepared using the device.

摘要翻译： 本发明提供了一种喷淋头，其温度可以根据所选择的成膜条件进行控制，薄膜制造装置允许稳定且连续地形成仅包含微量颗粒的薄膜，同时再现良好的 膜厚分布和组成分布，成膜率高，生产性和批量生产能力优异的方法以及制备这种膜的方法。 淋浴头被设计成将喷头结构结合到成膜容器的上盖中，将热交换装置设置在上盖中，从而控制上盖的温度，并且进而允许 考虑到所选择的成膜条件，可以在构成淋浴头表面的盘形淋浴板和上盖之间的接触表面处发生热交换，并且可以控制喷淋头的温度。 薄膜制造装置在其成膜容器中配备有喷头，并且使用该装置制备薄膜。

公开(公告)号：US20120190149A1

公开(公告)日：2012-07-26

申请号：US13435646

申请日：2012-03-30

申请人： Masaki SHIMA ,  Yoshinori WAKAMIYA ,  Shuji OSONO ,  Satohiro OKAYAMA ,  Hideyuki OGATA

发明人： Masaki SHIMA ,  Yoshinori WAKAMIYA ,  Shuji OSONO ,  Satohiro OKAYAMA ,  Hideyuki OGATA

IPC分类号： H01L31/0216 ,  C23C16/458

CPC分类号： C23C16/44 ,  C23C16/24 ,  C23C16/325 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/481 ,  H01L21/68757

摘要： In a catalytic CVD equipment, a holder includes an antireflective structure for preventing reflection of a radiant ray that is ejected from the catalytic wire toward the side of the substrate.

摘要翻译： 在催化CVD设备中，保持器包括防反射结构，用于防止从催化丝向衬底侧喷射的辐射线的反射。

公开(公告)号：US20120181164A1

公开(公告)日：2012-07-19

申请号：US13395895

申请日：2010-09-17

申请人： Yasuo Ookubo ,  Hiroshi Nagata

发明人： Yasuo Ookubo ,  Hiroshi Nagata

IPC分类号： C01B33/037 ,  B01J19/08

CPC分类号： C01B33/037 ,  H05H1/44

摘要： The silicon purification method uses a silicon purification device including at least a crucible for loading a silicon metal and a plasma torch, and purifies the silicon metal by injecting a plasma gas from the plasma torch toward a melt surface of the silicon metal loaded in the crucible in a state where an angle formed by the melt surface and the plasma gas is set in the range of 20° to 80°.

摘要翻译： 硅纯化方法使用至少包括用于加载硅金属和等离子体焰炬的坩埚的硅纯化装置，并且通过从等离子体焰炬注入等离子体气体来朝向装载在坩埚中的硅金属的熔融表面来净化硅金属 在由熔融表面和等离子体气体形成的角度设定在20°至80°的范围内的状态。

公开(公告)号：US08207949B2

公开(公告)日：2012-06-26

申请号：US12567089

申请日：2009-09-25

申请人： Hirohisa Takahashi ,  Satoru Takasawa ,  Isao Sugiura ,  Atsushi Ota ,  Satoru Ishibashi ,  Haruhiko Yamamoto

发明人： Hirohisa Takahashi ,  Satoru Takasawa ,  Isao Sugiura ,  Atsushi Ota ,  Satoru Ishibashi ,  Haruhiko Yamamoto

IPC分类号： G06F3/041

CPC分类号： G06F3/041 ,  G06F3/045 ,  Y10T29/49117

摘要： A highly durable touch panel is provided. A touch panel according to the present invention includes a deformable flexible panel, and a transparent electrode film containing In2O3 as a primary component and containing Ti is exposed to a surface of a lower electrode film of a display device. Since such a transparent electrode film has a high abrasion resistance as compared to a conventional one (such as, an ITO thin film), the transparent electrode film is neither clouded nor cracked even if the lower electrode film is repeatedly pressed. Therefore, the touch panel according to the present invention is highly durable.

摘要翻译： 提供高度耐用的触摸面板。 根据本发明的触摸面板包括可变形的柔性面板，并且包含In 2 O 3作为主要成分并且含有Ti的透明电极膜暴露于显示装置的下电极膜的表面。 由于这种透明电极膜与以往的透明电极膜相比具有高耐磨性（例如ITO薄膜），所以即使下反射膜反复被压制，透明电极膜也不会发生糊化或者不破裂。 因此，根据本发明的触摸面板是高度耐用的。

公开(公告)号：US08197599B2

公开(公告)日：2012-06-12

申请号：US12086032

申请日：2006-11-13

申请人： Takakazu Yamada ,  Nobuyuki Kato ,  Masaki Uematsu

发明人： Takakazu Yamada ,  Nobuyuki Kato ,  Masaki Uematsu

IPC分类号： C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/45514 ,  C23C16/45565

摘要： A gas head that, at low cost, is capable of suppressing any deactivation of radical gas and capable of uniformly introducing a raw material gas on a substrate; and a relevant thin-film manufacturing apparatus are provided. A gas head (13) according to the present invention includes a reactive gas introduction port (30A) for introduction of a reactive gas, a plurality of raw material gas introduction ports (30B) for introduction of a raw material gas, and a dispersion board (32) for dispersing the raw material gas, wherein the plurality of the raw material gas introduction ports (30B) are disposed so as to surround the periphery of the reactive gas introduction port (30A). The reactive gas having been introduced in the reactive gas introduction port (30A) is mixed with the raw material gas having been introduced through a plurality of raw material gas introduction ports (30B) and dispersed by means of the dispersion board (32). Although the plurality of raw material gas introduction ports (30B) are disposed around the reactive gas introduction port (30A), they are not required to be minute holes such as shower holes.

摘要翻译： 一种低成本地能够抑制自由基气体的失活并能够将原料气体均匀地引入到基板上的气体头， 并提供相关的薄膜制造装置。 根据本发明的气体头（13）包括用于引入反应性气体的反应气体引入口（30A），用于引入原料气体的多个原料气体导入口（30B）和分散板 （32），用于分散原料气体，其中多个原料气体导入口（30B）配置成包围反应气体导入口（30A）的周围。 引入到反应气体导入口（30A）中的反应性气体与通过多个原料气体导入口（30B）导入并通过分散板（32）分散的原料气体混合。 虽然多个原料气体导入口（30B）配置在反应气体导入口（30A）的周围，但不需要像淋浴孔那样的小孔。

公开(公告)号：US20120134867A1

公开(公告)日：2012-05-31

申请号：US13389070

申请日：2010-08-11

申请人： Toshio Suzuki ,  Tomonari Tanaka

发明人： Toshio Suzuki ,  Tomonari Tanaka

IPC分类号： F01C1/16

CPC分类号： F04C18/126 ,  F04C18/086 ,  F04C23/001 ,  F04C29/04 ,  F04C2220/12

摘要： The present invention provides a dry pump including: a center cylinder which includes: a plurality of pump chambers containing an upper stage pump chamber that communicates with an intake port and a lower stage pump chamber that communicates with a discharge port; a plurality of rotors contained in the plurality of the pump chambers; a rotating shaft that is a rotation axis of the rotor; and a side face on which a communication hole is formed, the side face being intersected by the rotating shaft extending in the axial direction, and being provided adjacent to the lower stage pump chamber, and a side cover which covers the side face with the communication hole to form a space.

摘要翻译： 本发明提供一种干泵，其包括：中心筒，其包括：多个泵室，包含与进气口连通的上级泵室和与排出口连通的下级泵室; 多个所述泵室中容纳的多个转子; 作为转子的旋转轴的旋转轴; 和形成有连通孔的侧面，所述侧面与沿所述轴向延伸的所述旋转轴相交，并且与所述下级泵室相邻设置;以及侧盖，其与所述侧面覆盖所述连通 孔形成空间。

公开(公告)号：US20120121818A1

公开(公告)日：2012-05-17

申请号：US13386264

申请日：2010-07-21

申请人： Shuji Kodaira ,  Tomoyuki Yoshihama ,  Koukichi Kamada ,  Kazumasa Horita ,  Junichi Hamaguchi ,  Shigeo Nakanishi ,  Satoru Toyoda

发明人： Shuji Kodaira ,  Tomoyuki Yoshihama ,  Koukichi Kamada ,  Kazumasa Horita ,  Junichi Hamaguchi ,  Shigeo Nakanishi ,  Satoru Toyoda

IPC分类号： B05D3/06 ,  B05C11/00 ,  C23C14/34

CPC分类号： H01L21/76877 ,  H01L21/321 ,  H01L21/32131 ,  H01L21/76883

摘要： A coating surface processing method includes forming a coating on the entire surface of a base body that has fine holes or fine grooves formed on the to-be-filmed surface, including the inner wall surfaces and the inner bottom surfaces of the holes or the grooves, and flattening the coating formed on the inner wall surfaces of the holes or the grooves by carrying out a plasma processing on the surface of the coating.

摘要翻译： 涂布表面处理方法包括在具有形成在被成膜表面上的细孔或细槽的基体的整个表面上形成涂层，包括孔或槽的内壁表面和内底表面 并且通过在涂层的表面上进行等离子体处理来使形成在孔或槽的内壁表面上的涂层变平。

公开(公告)号：US20120119269A1

公开(公告)日：2012-05-17

申请号：US13310056

申请日：2011-12-02

申请人： Satoru TAKASAWA ,  Masanori Shirai ,  Satoru Ishibashi ,  Tadashi Masuda ,  Yasuo Nakadai

发明人： Satoru TAKASAWA ,  Masanori Shirai ,  Satoru Ishibashi ,  Tadashi Masuda ,  Yasuo Nakadai

IPC分类号： H01L29/78 ,  H01L23/48 ,  B05D5/12

CPC分类号： H01L23/53238 ,  C22C9/00 ,  G02F2001/136295 ,  H01L27/124 ,  H01L2924/0002 ,  H01L2924/00

摘要： A technique is provided which prevents an increase in the resistivity of a conductive wiring film. A conductive layer containing Ca in a content rate of 0.3 atom % or more is provided on the surfaces of each of conductive wiring films which are to be exposed to a gas containing a Si atom in a chemical structure at a high temperature. When a gate insulating layer or a protection film containing Si is formed on the surface of the conductive layer, the Si atoms do not diffuse into the conductive layer and a resistance value does not increase, even if the conductive layer is exposed to the raw material gas containing Si in a chemical structure . Further, a CuCaO layer can be formed as an adhesive layer for preventing Si diffusion from a glass substrate or a silicon semiconductor.

摘要翻译： 提供了防止导电布线膜的电阻率增加的技术。 在高温化学结构中暴露于含有Si原子的气体的导电布线膜的表面上，设置含有0.3原子％以上的Ca的导电层。 当在导电层的表面上形成栅绝缘层或含有Si的保护膜时，即使导电层暴露于原料，Si原子也不会扩散到导电层中，并且电阻值不增加 含有化学结构中的Si的气体。 此外，CuCaO层可以形成为用于防止Si从玻璃衬底或硅半导体扩散的粘合剂层。