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    Magnetically Actuated Micro-Electro-Mechanical Capacitor Switches in Laminate
    81.
    发明申请
    Magnetically Actuated Micro-Electro-Mechanical Capacitor Switches in Laminate 有权
    磁力驱动微电机电容器开关在层压板

    公开(公告)号：US20120103768A1

    公开(公告)日：2012-05-03

    申请号：US13286120

    申请日：2011-10-31

    Applicant: Mark Bachman ,  Guann-Pyng Li ,  Yang Zhang ,  Minfeng Wang ,  Sung Jun Kim

    Inventor： Mark Bachman ,  Guann-Pyng Li ,  Yang Zhang ,  Minfeng Wang ,  Sung Jun Kim

    IPC: H01H59/00 ,  H05K13/00

    CPC classification number: H01H50/005 ,  B81B2201/01 ,  B81B2203/0109 ,  H01G5/18 ,  H01H59/0009 ,  H01H2050/007 ,  Y10T29/49002

    Abstract: Magnetically actuated micro-electro-mechanical capacitor switches in laminate are disclosed. According to one embodiment, an apparatus comprises a first layer comprising a coil and magnetic element, the magnetic element made from one of nickel and iron; a second layer comprising a flexible member, wherein a permanent magnet is attached to the flexible member; a conductive plate having an insulating dielectric coating, the conductive plate attached to one of the flexible member or a magnet; and a third layer comprising a transmission line and magnetic material, wherein the transmission line comprises one or more of a signal conductor and one or more ground conductors in near proximity.

    Abstract translation: 揭示了层压板中的磁致动微电机电容器开关。 根据一个实施例，一种装置包括包括线圈和磁性元件的第一层，由镍和铁之一制成的磁性元件; 第二层，包括柔性构件，其中永磁体附接到所述柔性构件; 具有绝缘电介质涂层的导电板，所述导电板附接到所述柔性构件中的一个或磁体; 以及包括传输线和磁性材料的第三层，其中传输线包括一个或多个信号导体和一个或多个靠近的接地导体。

    "> GOLD-METAL OXIDE THIN FILMS FOR WEAR-RESISTANT MICROELECTROMECHANICAL SYSTEMS (
    84.
    发明申请
    GOLD-METAL OXIDE THIN FILMS FOR WEAR-RESISTANT MICROELECTROMECHANICAL SYSTEMS ("MEMS") 审中-公开
    金属氧化物薄膜耐磨微电子系统（“MEMS”）

    公开(公告)号：US20080230357A1

    公开(公告)日：2008-09-25

    申请号：US12052838

    申请日：2008-03-21

    Applicant: Richard P. Vinci ,  Walter L. Brown ,  Thirumalesh Bannuru

    Inventor： Richard P. Vinci ,  Walter L. Brown ,  Thirumalesh Bannuru

    IPC: H01H59/00 ,  H01B1/02 ,  C25D5/00 ,  C23C14/34 ,  H05K3/00

    CPC classification number: H01H1/0015 ,  B81B3/0075 ,  B81B2201/01 ,  C23C14/0036 ,  C23C14/083 ,  C23C14/16 ,  H01H1/0036 ,  H01H1/023 ,  H01H1/0237

    Abstract: Provided herein are new methods for the fabrication of gold (Au) alloys and films containing metal or semimetal oxides such as oxides of vanadium (V), for example, Au—V2O5 for use in electrical, mechanical, and microelectromechanical systems (“MEMS”). An example embodiment provides a thin film of an alloy comprising Au—V2O5 in a MEMS for a contact switch. Also described herein are gold-metal oxide thin films for use in, e.g. wear-resistant MEMS. Measurements of contact force and electrical contact resistance between pairs of Au or Au—V films show that increased hardness and resistivity in the alloy films results in higher contact resistance and less adhesion than in pure Au.

    Abstract translation: 本文提供了用于制造金（Au）合金和含有金属或半金属氧化物如钒（V）氧化物（例如Au-V 2 O 5）的膜的新方法， / SUB，用于电气，机械和微机电系统（“MEMS”）。 示例性实施例在用于接触开关的MEMS中提供包含Au-V 2 O 5 O 5的合金薄膜。 本文还描述了用于例如金属氧化物薄膜的金 - 金属氧化物薄膜。 耐磨MEMS。 Au或Au-V薄膜对接触力和电接触电阻的测量表明，合金薄膜中增加的硬度和电阻率导致比纯Au更高的接触电阻和更小的粘附力。

    Micro-electromechanical varactor with enhanced tuning range
    85.
    发明授权
    Micro-electromechanical varactor with enhanced tuning range 有权
    具有增强调谐范围的微机电变容二极管

    公开(公告)号：US06661069B1

    公开(公告)日：2003-12-09

    申请号：US10278211

    申请日：2002-10-22

    Applicant: Anil K. Chinthakindi ,  Robert A. Groves ,  Kenneth J. Stein ,  Seshadri Subbanna ,  Richard P. Volant

    Inventor： Anil K. Chinthakindi ,  Robert A. Groves ,  Kenneth J. Stein ,  Seshadri Subbanna ,  Richard P. Volant

    IPC: H01L2986

    CPC classification number: H01G5/18 ,  B81B2201/01 ,  H01G5/011 ,  Y10S257/924

    Abstract: A three-dimensional micro- electromechanical (MEM) varactor is described wherein a movable beam and fixed electrode are respectively fabricated on separate substrates coupled to each other. The movable beam with comb-drive electrodes are fabricated on the “chip side” while the fixed bottom electrode is fabricated on a separated substrate “carrier side”. Upon fabrication of the device on both surfaces of the substrate, the chip side device is diced and “flipped over”, aligned and joined to the “carrier” substrate to form the final device. Comb-drive (fins) electrodes are used for actuation while the motion of the electrode provides changes in capacitance. Due to the constant driving forces involved, a large capacitance tuning range can be obtained. The three dimensional aspect of the device avails large surface area. When large aspect ratio features are provided, a lower actuation voltage can be used. Upon fabrication, the MEMS device is completely encapsulated, requiring no additional packaging of the device. Further, since alignment and bonding can be done on a wafer scale (wafer scale MEMS packaging), an improved device yield can be obtained at a lower cost.

    Abstract translation: 描述了三维微机电（MEM）变容二极管，其中可移动光束和固定电极分别制造在彼此耦合的分开的基板上。 具有梳状驱动电极的可移动光束在“芯片侧”上制造，而固定底部电极制造在分离的基板“载体侧”上。 在衬底的两个表面上制造器件时，芯片侧器件被切割并“翻转”，对准并接合到“载体”衬底以形成最终器件。 梳状驱动（鳍）电极用于致动，同时电极的运动提供电容的变化。 由于所涉及的驱动力恒定，可以获得大的电容调谐范围。 该装置的三维方面具有较大的表面积。 当提供大的纵横比特征时，可以使用较低的致动电压。 在制造时，MEMS器件被完全封装，不需要额外的器件封装。 此外，由于可以在晶片规模（晶片级MEMS封装）上进行取向和接合，所以可以以更低的成本获得改进的器件产量。

    MEMS relay and method of fabricating the same
    86.
    发明授权
    MEMS relay and method of fabricating the same 有权
    MEMS继电器及其制造方法

    公开(公告)号：US06511894B2

    公开(公告)日：2003-01-28

    申请号：US10056009

    申请日：2002-01-28

    Applicant: Hoon Song

    Inventor： Hoon Song

    IPC: H01L2130

    CPC classification number: B81B7/007 ,  B81B2201/01 ,  H01H59/0009

    Abstract: A MEMS relay is provided. The MEMS relay includes a first wafer, a second wafer, and a third wafer that are sequentially stacked. The first wafer includes driving electrodes positioned at the bottom surface of the first wafer, input signal electrodes and output signal electrodes formed adjacent to each other and corresponding to the driving electrodes, via holes formed through the first wafer on the driving electrodes, the input signal electrodes, and the output signal electrodes, and metal pads formed over the via holes. The second wafer includes a body including a sealing unit used to hermetically seal the first and third wafers with the second wafer interposed therebetween, a driving unit which is formed inside and isolated from the body, is an integrated body consisting of a silicon substrate, a passivation layer formed on the silicon substrate, and contact electrodes formed on the passivation layer, and is located lower than the top surface of the body by a predetermined distance, and a connection supporter which extends from two opposing sides of the driving unit to the inner surface of the body. The third wafer includes a hollow in which the driving unit can be rotated.

    Abstract translation: 提供了MEMS继电器。 MEMS继电器包括依次层叠的第一晶片，第二晶片和第三晶片。 第一晶片包括位于第一晶片的底表面处的驱动电极，输入信号电极和彼此相邻形成并对应于驱动电极的输出信号电极，通过驱动电极上的第一晶片形成的通孔，输入信号 电极和输出信号电极以及形成在通孔上方的金属焊盘。 第二晶片包括主体，其包括用于密封第一晶片和第三晶片的密封单元，其间插入有第二晶片，形成在主体内部并与主体隔离的驱动单元是由硅基板， 形成在硅衬底上的钝化层和形成在钝化层上的接触电极，并且位于比主体的顶表面低一个预定距离处;以及连接支撑件，其从驱动单元的两个相对侧延伸到内部 身体表面。 第三晶片包括可驱动驱动单元旋转的中空部。

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