公开(公告)号：US08101245B1

公开(公告)日：2012-01-24

申请号：US12855645

申请日：2010-08-12

Applicant: Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

Inventor： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

IPC: C23C16/00

CPC classification number: C23C16/511 ,  C23C16/24 ,  C23C16/545 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262

Abstract: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

公开(公告)号：US20120000610A1

公开(公告)日：2012-01-05

申请号：US13174938

申请日：2011-07-01

Applicant: Jin Hyuk Choi ,  Sang Chul Han ,  Jong Il Kee ,  Young dong Lee ,  Guen Suk Lee ,  Seung Hun Oh

Inventor： Jin Hyuk Choi ,  Sang Chul Han ,  Jong Il Kee ,  Young dong Lee ,  Guen Suk Lee ,  Seung Hun Oh

IPC: C23F1/08 ,  H01L21/00 ,  C23C16/46 ,  H01L21/3065 ,  C23C16/50 ,  C23C16/458

CPC classification number: H01J37/3222 ,  C23C16/511 ,  H01L21/67069

Abstract: In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to perform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring.

Abstract translation: 根据示例性实施例，等离子体处理设备包括被配置为执行等离子体处理的室，室上的上板，在上板下的天线，天线被配置为在室中产生等离子体， 上板和天线和上绝缘体覆盖天线的顶部，覆盖天线的底部的下绝缘体，被配置为将天线固定到上板的天线支撑环和粘附到天线支撑环的金属垫片 。

公开(公告)号：US08052887B2

公开(公告)日：2011-11-08

申请号：US12689815

申请日：2010-01-19

Applicant: Toshihisa Nozawa ,  Tamaki Yuasa

Inventor： Toshihisa Nozawa ,  Tamaki Yuasa

IPC: C23C16/44 ,  C23C16/00

CPC classification number: H01J37/32834 ,  C23C16/4405 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32862

Abstract: When plasma processing is finished, a gate valve 13a is closed and cleaning gas is ejected from holes 121a of a shower plate 121, and at the same time, a microwave is generated from a microwave generator 101. Further, at this time, the inside of a process chamber 110 is exhausted through a second exhaust port 106. Since the exhaust is conducted through a second exhaust port 106 positioned lower than a wafer stage 104 in a lowered state when the inside of the process chamber 110 is cleaned, it is possible to more effectively remove gas and reaction products deposited especially in a lower portion of the process chamber 110.

Abstract translation: 当等离子体处理完成时，关闭闸阀13a，并且从喷淋板121的孔121a喷射清洁气体，同时从微波发生器101产生微波。此外，此时，内部 处理室110通过第二排气口106排出。由于当处理室110的内部被清洁时，排气通过位于低于晶片台104的第二排气口106处于降低状态，所以可能 以更有效地去除特别沉积在处理室110下部的气体和反应产物。

公开(公告)号：US08034179B2

公开(公告)日：2011-10-11

申请号：US12865969

申请日：2009-02-06

Applicant: Yoshiro Kabe ,  Junichi Kitagawa ,  Kikuo Yamabe

Inventor： Yoshiro Kabe ,  Junichi Kitagawa ,  Kikuo Yamabe

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/3105 ,  C23C16/0272 ,  C23C16/402 ,  C23C16/45565 ,  C23C16/511 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/28008 ,  H01L21/31612 ,  H01L21/31654 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/66765

Abstract: In order to form an insulating film, which constitutes a flat interface with silicon, by CVD, a surface of silicon is oxidized to form a silicon oxide film using a plasma treatment apparatus in which microwaves are introduced into a chamber through a flat antenna having a plurality of holes. A silicon oxide film is formed as an insulating film on the silicon oxide film by CVD. Further, in the plasma treatment apparatus, a treating gas containing a noble gas and oxygen is introduced into the chamber, and, further, microwaves are introduced into the chamber through the flat antenna. Plasma is generated under a pressure in the range of not less than 6.7 Pa and not more than 533 Pa to modify the insulating film with the plasma.

Abstract translation: 为了通过CVD形成与硅形成平坦界面的绝缘膜，使用等离子体处理装置将硅的表面氧化形成氧化硅膜，其中微波通过具有 多个孔。 通过CVD在氧化硅膜上形成氧化硅膜作为绝缘膜。 此外，在等离子体处理装置中，将含有惰性气体和氧气的处理气体引入室内，并且还通过平板天线将微波引入室内。 在不低于6.7Pa且不大于533Pa的压力下产生等离子体，以便用等离子体改性绝缘膜。

公开(公告)号：US08017197B2

公开(公告)日：2011-09-13

申请号：US10580036

申请日：2004-11-19

Applicant: Yasuo Kobayashi ,  Kohei Kawamura

Inventor： Yasuo Kobayashi ,  Kohei Kawamura

IPC: H05H1/24 ,  C23C14/02 ,  C23C16/00 ,  C23F1/00

CPC classification number: C23C16/511 ,  C23C16/26 ,  C23C16/4404 ,  C23C16/4405 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/3244

Abstract: A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.

Abstract translation: 通过电介质板（6）将微波从天线（7）的平面天线部件辐射到处理室（1）中。 由此，将从气体供给部件（3）供给到处理室（1）的C5F8气体变更（激活）为等离子体，以在半导体晶片（W）上形成一定厚度的含氟碳膜 ）。 每次进行在一个晶片上形成膜的成膜工艺时，进行清洗处理和预涂工序。 在清洁过程中，用氧气和氢气的等离子体清洁处理室的内部。 在预涂工序中，将C5F8气体变成等离子体，形成比成膜工序中形成的含氟碳膜薄的含氟碳的预涂膜。

公开(公告)号：US20110189862A1

公开(公告)日：2011-08-04

申请号：US13121610

申请日：2009-09-29

Applicant: Minoru Honda ,  Tatsuo Nishita ,  Junya Miyahara ,  Masayuki Kohno

Inventor： Minoru Honda ,  Tatsuo Nishita ,  Junya Miyahara ,  Masayuki Kohno

IPC: H01L21/314 ,  C23C16/48 ,  H01B1/08

CPC classification number: H01L21/0214 ,  C23C16/308 ,  C23C16/511 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3145 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/513 ,  H01L29/518 ,  H01L29/792

Abstract: Provided is a process of forming a silicon oxynitride film having concentration of hydrogen atoms below or equal to 9.9×1020 atoms/cm3 as measured by using secondary ion mass spectrometry (SIMS), using a plasma CVD device, which generates plasma by introducing microwaves into a process chamber by using a planar antenna having a plurality of apertures, by setting a pressure inside the process chamber within a range from 0.1 Pa to 6.7 Pa, and performing plasma CVD by using process gases including SiCl4 gas, nitrogen gas, and oxygen gas.

Abstract translation: 提供了通过使用二次离子质谱法（SIMS）测量的氢原子浓度低于或等于9.9×1020原子/ cm3的氧氮化硅膜的方法，使用等离子体CVD装置，其通过引入微波产生等离子体 通过使用具有多个孔的平面天线，通过将处理室内部的压力设定在0.1Pa至6.7Pa的范围内的处理室，并且通过使用包括SiCl 4气体，氮气和氧气的处理气体来进行等离子体CVD 。

公开(公告)号：US07934468B2

公开(公告)日：2011-05-03

申请号：US11762472

申请日：2007-06-13

Applicant: Takahiro Horiguchi

Inventor： Takahiro Horiguchi

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: C23C16/511 ,  C23C16/45565 ,  H01J37/32192 ,  H01J37/32229

Abstract: Microwaves propagated through the waveguide 30, a plurality of slots 31 and the dielectric members 33 in this order are supplied into the processing chamber U where they are used to excite a gas to plasma to be used to process a substrate G. Alumina 50 fills an area inside the waveguide 30 near an end surface C thereof, and the remaining area inside the waveguide is filled with Teflon 35. Since the alumina 50 has a smaller guide wavelength λg compared to the Teflon 35, the mechanical length measured from the end surface C of the waveguide 30 to the center of the closest slot is reduced compared to the mechanical length of a waveguide filled only with Teflon 35 while maintaining the physical characteristic length from the end surface C to the closest slot center at λg/4.

Abstract translation: 通过波导30传播的微波，多个狭缝31和电介质构件33依次被提供到处理室U中，在那里它们被用于激发用于处理衬底G的等离子体的气体。氧化铝50填充 波导管30的靠近其端面C的区域内，波导内的其余区域填充有特氟龙35.由于氧化铝50与特氟龙35相比具有较小的导向波长λg，所以从端面C测量的机械长度 相对于仅用特氟隆35填充的波导的机械长度，相对于最接近的槽的中心减小，同时保持从端面C到最接近的槽中心的物理特性长度为λg/ 4。

公开(公告)号：US20110076422A1

公开(公告)日：2011-03-31

申请号：US12833524

申请日：2010-07-09

Applicant: Michael W. Stowell

Inventor： Michael W. Stowell

IPC: H05H1/30 ,  C23C16/511

CPC classification number: H01J27/16 ,  C23C16/04 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3222 ,  H05H1/46

Abstract: Deposition system and methods for dynamic and static coatings are provided. A deposition system for dynamic coating includes a processing chamber, a non-linear coaxial microwave source, and a substrate support member disposed inside the processing chamber for holding a non-planar substrate. The substrate has a first contour along a first direction and a second contour along a second direction orthogonal to the first direction. The deposition system further includes a carrier gas line for providing a flow of sputtering agents inside the processing chamber and a feedstock gas line for providing a flow of precursor gases. The deposition system for static coating includes a substrate support member disposed inside the processing chamber for holding a non-planar substrate and an array of curved coaxial microwave sources within the processing chamber. The curved coaxial microwave sources are spaced along the second direction to cover the substrate.

Abstract translation: 提供了动态和静态涂层的沉积系统和方法。 用于动态涂层的沉积系统包括处理室，非线性同轴微波源和设置在处理室内部用于保持非平面衬底的衬底支撑构件。 衬底具有沿着第一方向的第一轮廓和沿着与第一方向正交的第二方向的第二轮廓。 沉积系统还包括用于在处理室内提供溅射剂流的载气管线和用于提供前体气体流的原料气体管线。 用于静电涂覆的沉积系统包括设置在处理室内的衬底支撑构件，用于在处理室内保持非平面衬底和阵列的弯曲同轴微波源。 弯曲的同轴微波源沿着第二方向间隔开以覆盖衬底。

公开(公告)号：US07887891B2

公开(公告)日：2011-02-15

申请号：US11996204

申请日：2006-07-24

Applicant: Jean-Michel Rius

Inventor： Jean-Michel Rius

IPC: H05H1/24

CPC classification number: C23C16/045 ,  B05D1/62 ,  B05D7/02 ,  B05D7/227 ,  C23C16/511

Abstract: A machine (1) for depositing a thin layer of a barrier-effect material inside a container (2) by plasma-enhanced chemical vapor deposition, said machine (1) comprising: a processing unit (4) receiving the container (2) and equipped with an electromagnetic wave generator (11); a precursor gas outlet (17); an injector (13) for injecting said precursor gas into the container (2), said injector (13) having a bottom end (14) that opens out into the container (2) and an opposite top end (15); a precursor gas feed duct (20) that puts the precursor gas outlet (17) into fluid flow connection with the top end (15) of the injector (13); and a solenoid valve (25) interposed in the feed duct (20) between the precursor gas outlet (17) and the injector (13), immediately upstream from the top end (15) of the injector (13).

Abstract translation: 一种用于通过等离子体增强化学气相沉积在容器（2）内沉积阻挡效应材料薄层的机器（1），所述机器（1）包括：处理单元（4），容纳所述容器（2）和 配备电磁波发生器（11）; 前体气体出口（17）; 用于将所述前体气体注入到所述容器（2）中的注射器（13），所述注射器（13）具有通向所述容器（2）和相对的顶端（15）的底端（14）; 前体气体供给管道（20），其将前体气体出口（17）与喷射器（13）的顶端（15）流体流动连接; 以及在所述前驱气体出口（17）和所述喷射器（13）之间插入在所述进料管道（20）中的电磁阀（25），其紧邻所述喷射器（13）的顶端（15）的上游。

公开(公告)号：US20100275981A1

公开(公告)日：2010-11-04

申请号：US12809447

申请日：2008-12-12

Applicant: Tadahiro Ohmi ,  Akinobu Teramoto ,  Tetsuya Goto ,  Kouji Tanaka

Inventor： Tadahiro Ohmi ,  Akinobu Teramoto ,  Tetsuya Goto ,  Kouji Tanaka

IPC: H01L31/04 ,  H01L31/18

CPC classification number: H01L31/18 ,  C23C16/24 ,  C23C16/511 ,  H01L31/028 ,  H01L31/04 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/1812 ,  H01L31/1816 ,  Y02E10/547 ,  Y02P70/521

Abstract: An apparatus and method for manufacturing photoelectric conversion elements, and a photoelectric conversion element, the apparatus and method being capable of highly efficiently forming a film at a high speed with microwave plasma, preventing oxygen from mixing, and reducing the number of defects. The invention provides a photoelectric conversion element manufacturing apparatus 100 that forms a semiconductor stack film on a substrate by using microwave plasma CVD. The apparatus includes a chamber 10 which is a enclosed space containing a base, on which the a subject substrate for thin-film formation is mounted, a first gas supply unit 40 which supplies plasma excitation gas to a plasma excitation region in the chamber 10, a pressure regulation unit 70 which regulates pressure in the chamber 10, a second gas supply unit 50 which supplies raw gas to a plasma diffusion region in the chamber 10, a microwave application unit 20 which applies microwaves into the chamber 10, and a bias voltage application unit 60 which selects and applies a substrate bias voltage to the substrate W according to the type of gas.

Abstract translation: 一种用于制造光电转换元件的装置和方法以及光电转换元件，该装置和方法能够高效地用微波等离子体形成膜，防止氧气混合，并减少缺陷数量。 本发明提供一种通过使用微波等离子体CVD在基板上形成半导体叠层膜的光电转换元件制造装置100。 该装置包括：腔室10，其是容纳基底的封闭空间，其上安装有用于薄膜形成的被检体基底;第一气体供给单元40，其向等离子体激发区域提供等离子体激发气体; 调节室10内的压力的压力调节单元70，向室10中的等离子体扩散区域供给原料气体的第二气体供给单元50，将微波施加到室10中的微波施加单元20以及偏置电压 应用单元60，其根据气体的类型选择并施加衬底偏置电压到衬底W.