利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

272 条记录 (耗时 0.023 秒)

    High-sensitivity strain probe
    81.
    发明授权
    High-sensitivity strain probe 失效

    公开(公告)号：US5907095A

    公开(公告)日：1999-05-25

    申请号：US865967

    申请日：1997-05-30

    申请人： Yung-Shi Lin

    发明人： Yung-Shi Lin

    IPC分类号： G01B7/16 ,  G01B21/30 ,  G01Q20/04 ,  G01Q70/16 ,  G01B5/28

    CPC分类号： G01Q70/16 ,  B82Y35/00 ,  G01B7/16 ,  G01Q20/04 ,  G01P2015/0828 ,  Y10S977/873 ,  Y10T29/49103

    摘要： The present invention is a high-sensitivity strain probe used in high-sensitivity sensor elements of force type. By the use of semiconductor process and wire bonding technology as well as integrated forming method, the fabricated elements include: a probe, a cantilever, a cantilever substrate, resistance materials, and a processing circuit that can be applied to a probe microscope to greatly reduce the number of elements of the scanning probe microscopy. The invention attains the object of lowering the cost and effectively solves the problems of an excessively large signal-to-noise ratio and avoids using the optical elements present in a conventional microscopic probe avoiding various inconveniences and shortcomings of the prior art.

    Cantilever and process for fabricating it
    84.
    发明授权
    Cantilever and process for fabricating it 失效
    悬臂和制造工艺

    公开(公告)号：US5717132A

    公开(公告)日：1998-02-10

    申请号：US637389

    申请日：1996-04-25

    申请人： Shunji Watanabe ,  Takamitsu Fujiu

    发明人： Shunji Watanabe ,  Takamitsu Fujiu

    IPC分类号： G01B21/30 ,  G01B5/28 ,  G01N23/00 ,  G01N37/00 ,  G01Q20/04 ,  G01Q60/34 ,  G01Q60/38 ,  G01Q70/08 ,  G01Q70/14 ,  H01J37/28

    CPC分类号： G01Q60/38 ,  B82Y35/00 ,  G01Q20/04 ,  G01Q70/02 ,  Y10S977/873

    摘要： A probe formed in a flexible portion of a cantilever is protected by a protection frame. This protection frame is separated from a support portion at a border of a groove between the protection frame and the support portion. A piezoelectric crystal layer is formed in the flexible portion, and when the flexible portion is bent by an interatomic force acting between the probe and a sample, a voltage induced between the both ends of the piezoelectric crystal layer changes.

    摘要翻译： 形成在悬臂的柔性部分中的探针由保护框架保护。 该保护框架与保护框架和支撑部分之间的槽边界处的支撑部分分离。 在柔性部分中形成压电晶体层，并且当柔性部分被作用在探针和样品之间的原子力弯曲时，在压电晶体层的两端之间感应的电压发生变化。

    Method of etching a pattern on a substrate using a scanning probe microscope
    87.
    发明授权
    Method of etching a pattern on a substrate using a scanning probe microscope 失效
    使用扫描探针显微镜对基板上的图案进行蚀刻的方法

    公开(公告)号：US5618760A

    公开(公告)日：1997-04-08

    申请号：US311763

    申请日：1994-09-23

    申请人： Hyongsok Soh ,  Stephen C. Minne ,  Calvin F. Quate

    发明人： Hyongsok Soh ,  Stephen C. Minne ,  Calvin F. Quate

    IPC分类号： B81B1/00 ,  B81B3/00 ,  B82B3/00 ,  G01Q10/04 ,  G01Q20/00 ,  G01Q60/24 ,  G01Q60/32 ,  G01Q70/16 ,  G01Q80/00 ,  G03F7/20 ,  H01L21/31 ,  H01L21/465

    CPC分类号： G03F7/2049 ,  B82Y35/00 ,  G01Q20/04 ,  G01Q60/30 ,  G03F7/70358 ,  G03F7/70375 ,  Y10S148/046 ,  Y10S438/947 ,  Y10S438/949 ,  Y10S977/856

    摘要： A scanning probe microscope is used to pattern a layer of resist, and the pattern is transferred to a substrate. First, an underlayer formed of, for example, polyimide and a top layer formed of, for example, amorphous silicon are deposited on the substrate. A pattern is formed on the top layer using the tip of the cantilever in a scanning probe microscope. The pattern may consist of an oxide formed by an electric field at the cantilever tip. The top layer is then etched using the pattern as a mask and using an etchant that is selective against the underlayer. The underlayer is then etched using an etchant that is selective against the top layer and substrate. The substrate is etched with an etchant that removes the top layer but is selective against the underlayer. Finally, the underlayer is removed.

    摘要翻译： 使用扫描探针显微镜对抗蚀剂层进行图案化，并将图案转印到基底上。 首先，由例如聚酰亚胺和由例如非晶硅形成的顶层形成的底层沉积在基板上。 在扫描探针显微镜中使用悬臂的尖端在顶层上形成图案。 该图案可以由在悬臂尖端处的电场形成的氧化物组成。 然后使用图案作为掩模蚀刻顶层，并使用对底层有选择性的蚀刻剂。 然后使用对顶层和衬底选择性的蚀刻剂来蚀刻底层。 用蚀刻剂蚀刻衬底，除去顶层，但是对底层是选择性的。 最后，底层被去除。

    Near field scanning optical and force microscope including cantilever and optical waveguide
    88.
    发明授权
    Near field scanning optical and force microscope including cantilever and optical waveguide 失效
    近场扫描光学和力显微镜包括悬臂和光波导

    公开(公告)号：US5354985A

    公开(公告)日：1994-10-11

    申请号：US72286

    申请日：1993-06-03

    申请人： Calvin F. Quate

    发明人： Calvin F. Quate

    IPC分类号： B81C1/00 ,  G01Q20/02 ,  G01Q20/04 ,  G01Q60/06 ,  G01Q60/22 ,  G01Q60/38 ,  H01J3/14

    CPC分类号： G01Q60/06 ,  B82Y20/00 ,  B82Y35/00 ,  G01Q20/04 ,  G01Q60/22 ,  G01Q60/38 ,  Y10S977/862 ,  Y10S977/863 ,  Y10S977/868 ,  Y10S977/873

    摘要： A near field scanning optical microscope (NSOM) includes a cantilever which is aligned generally parallel to the surface of a sample. An optical waveguide extends along the cantilever to a tip which protrudes downward from the cantilever. A small aperture at the apex of the tip allows light radiation flowing through the waveguide to be directed toward the sample. The cantilever is vibrated, and variations in its resonant frequency are detected and delivered to a feedback control system to maintain a constant separation between the tip and the sample. The NSOM can also be operated as an atomic force microscope in either a contact or non-contact mode.

    摘要翻译： 近场扫描光学显微镜（NSOM）包括大体平行于样品表面排列的悬臂。 光波导沿着悬臂延伸到从悬臂向下突出的尖端。 在尖端的顶点处的小孔允许流过波导的光辐射被引向样品。 悬臂振动，并且其谐振频率的变化被检测并传送到反馈控制系统以保持尖端和样品之间的恒定间隔。 NSOM也可以作为原子力显微镜在接触或非接触模式下操作。

    Integrated tip strain sensor for use in combination with a single axis atomic force microscope
    89.
    发明授权
    Integrated tip strain sensor for use in combination with a single axis atomic force microscope 失效
    集成尖端应变传感器，与单轴原子力显微镜组合使用

    公开(公告)号：US5345816A

    公开(公告)日：1994-09-13

    申请号：US157800

    申请日：1993-11-24

    申请人： Joachim Clabes ,  Henri A. Khoury ,  Laszlo Landstein

    发明人： Joachim Clabes ,  Henri A. Khoury ,  Laszlo Landstein

    IPC分类号： G01B21/30 ,  G01B7/34 ,  G01N27/00 ,  G01N37/00 ,  G01Q20/04 ,  G01Q60/24 ,  G01Q60/38 ,  G01Q60/42 ,  G03F7/20 ,  G01N23/00

    CPC分类号： G01Q60/38 ,  B82Y35/00 ,  G01B7/012 ,  G01Q20/04 ,  G03F7/70633 ,  Y10S977/852 ,  Y10S977/878

    摘要： An integrated tip strain sensor is combination with a single axis atomic force microscope (AFM) for determining the profile of a surface in three dimensions. A cantilever beam carries an integrated tip stem on which is deposited a piezoelectric film strain sensor. A high-resolution direct electron beam (e-beam) deposition process is used to grow a sharp tip onto the silicon (Si) cantilever structure. The direct e-beam deposition process permits the controllable fabrication of high-aspect ratio, nanometer-scale tip structures. A piezoelectric jacket with four superimposed elements is deposited on the tip stem. The piezoelectric sensors function in a plane perpendicular to that of a probe in the AFM; that is, any tip contact with the linewidth surface will cause tip deflection with a corresponding proportional electrical signal output. This tip strain sensor, coupled to a standard single axis AFM tip, allows for three-dimensional metrology with a much simpler approach while avoiding catastrophic tip "crashes". Two-dimensional edge detection of the sidewalls is used to calculate the absolute value or the linewidth of overlay, independent of the AFM principle. The technique works on any linewidth surface material, whether conductive, non-conductive or semiconductive.

    摘要翻译： 集成尖端应变传感器与单轴原子力显微镜（AFM）组合，用于确定三维表面的轮廓。 悬臂梁载有集成的尖端杆，其上沉积有压电薄膜应变传感器。 使用高分辨率直接电子束（电子束）沉积工艺将锋利的尖端生长到硅（Si）悬臂结构上。 直接电子束沉积工艺允许可控制造高纵横比，纳米尺度的尖端结构。 具有四个叠加元件的压电护套沉积在尖端杆上。 压电传感器在与AFM中的探头垂直的平面中起作用; 也就是说，与线宽表面的任何尖端接触将导致尖端偏转与相应的比例电信号输出。 这种尖端应变传感器与标准的单轴AFM尖端相连，允许采用更简单的方法进行三维计量，同时避免灾难性的尖端“崩溃”。 使用侧壁的二维边缘检测来计算覆盖层的绝对值或线宽，而与AFM原理无关。 该技术适用于任何线宽表面材料，无论是导电，非导电或半导体。