公开(公告)号：US20020016037A1

公开(公告)日：2002-02-07

申请号：US09867659

申请日：2001-05-31

发明人： Seung Kyu Han ,  Dong Su Park

IPC分类号： H01L021/8242

CPC分类号： H01L28/75 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02356 ,  H01L21/28568 ,  H01L21/3145 ,  H01L28/40

摘要： The present invention discloses a method for manufacturing a capacitor of a semiconductor memory device. The disclosed present invention comprises steps of forming a lower electrode made of a conductive polysilicon film or a conductive amorphous silicon film on a semiconductor substrate; forming a nitride film over the lower electrode; depositing an amorphous TaON thin film over the nitride film; subjecting the amorphous TaON thin film to a thermal treatment to effect a crystallization thereof; and forming a laminated structure composed of a TiON film and a doped silicon film for an upper electrode on the crystallized TaON thin film.

摘要翻译： 本发明公开了一种半导体存储器件的电容器的制造方法。 所公开的本发明包括在半导体衬底上形成由导电多晶硅膜或导电非晶硅膜制成的下电极的步骤; 在下电极上形成氮化膜; 在氮化物膜上沉积无定形TaON薄膜; 对无定形TaON薄膜进行热处理以使其结晶化; 并且在结晶的TaON薄膜上形成由TiON膜和用于上电极的掺杂硅膜构成的层压结构。

公开(公告)号：US20020001932A1

公开(公告)日：2002-01-03

申请号：US09895268

申请日：2001-07-02

申请人： Hynix Semiconductor, Inc.

发明人： Heung Jae Cho ,  Dae Gyu Park ,  Kwan Yong Lim

IPC分类号： H01L021/3205

CPC分类号： H01L21/02356 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02183 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/3185 ,  H01L29/513 ,  H01L29/518

摘要： The present invention discloses a method for forming a gate for semiconductor devices by depositing a TaOxNy film as a gate oxide film. The method includes the steps of providing a semiconductor substrate where a device isolation film has been formed, growing an SiO2 or SiON film on the semiconductor substrate, depositing an amorphous TaOxNy film on the SiO2 or SiON film, performing a low temperature annealing process to improve quality of the amorphous TaOxNy film, performing a high temperature annealing process ex-situ to remove organic substances and nitrogen in the amorphous TaOxNy film, and crystallize the amorphous TaOxNy film, and depositing a metal barrier film on the crystallized TaOxNy film, and depositing a polysilicon film or metal film for a gate electrode on the metal barrier film.

公开(公告)号：US20010055890A1

公开(公告)日：2001-12-27

申请号：US09850585

申请日：2001-05-07

发明人： Walter Hartner ,  Gunther Schindler ,  Frank Hintermaier ,  Volker Weinrich

IPC分类号： H01L021/31

CPC分类号： H01L21/02197 ,  H01L21/02356 ,  H01L21/31122 ,  H01L21/31691 ,  H01L21/32136 ,  H01L28/55

摘要： After an SBT layer is precipitated onto a substrate, the SBT layer is structured as a still amorphous layer. Only subsequently is it subjected to a crystallization process. Layers produced in this manner have a relatively high degree of dielectric strength and have no stoichiometric deviations on the etched edges.

摘要翻译： 在SBT层沉积到衬底上之后，SBT层被构造为静止非晶层。 只有随后才进行结晶过程。 以这种方式生产的层具有相对高的介电强度，并且在蚀刻的边缘上不具有化学计量偏差。

公开(公告)号：US06323057B1

公开(公告)日：2001-11-27

申请号：US09635174

申请日：2000-08-09

申请人： Shuji Sone

发明人： Shuji Sone

IPC分类号： H01L218242

CPC分类号： H01L21/02274 ,  H01L21/02197 ,  H01L21/02356 ,  H01L21/31691 ,  H01L28/40

摘要： A thin-film capacitor having a perovskite-structured polycrystalline oxide thin-film as its dielectric, that exhibits an excellent insulation property is provided. This capacitor comprises a perovskite-structured, polycrystalline oxide thin-film, and top and bottom electrodes located at each side of the thin-film. The perovskite-structured, polycrystalline oxide thin-film has a general formula of ABO3, where A is at least one element selected from the group consisting of bivalent metallic elements, lead, and lanthanum, and B is at least one element selected from the group consisting of quadrivalent metallic elements. A ratio of (A/B) is in a range from 1.1 to 2.0. The oxide thin-film has granular crystal grains. The perovskite-structured, polycrystalline oxide thin-film is formed by forming a perovskite-structured, amorphous oxide thin-film and by crystallizing the perovskite-structured, amorphous oxide thin-film due to heat treatment.

摘要翻译： 提供具有优异绝缘性的具有钙钛矿结构的多晶氧化物薄膜作为电介质的薄膜电容器。 该电容器包括钙钛矿结构的多晶氧化物薄膜，以及位于薄膜两侧的顶部和底部电极。 钙钛矿结构的多晶氧化物薄膜具有ABO 3的通式，其中A是选自二价金属元素，铅和镧中的至少一种元素，B是选自以下的至少一种元素： 由四价金属元素组成。 （A / B）的比例在1.1至2.0的范围内。 氧化物薄膜具有颗粒状晶粒。 钙钛矿结构的多晶氧化物薄膜是通过形成钙钛矿结构的无定形氧化物薄膜，并且通过结晶由于热处理而产生的钙钛矿结构的无定形氧化物薄膜而形成的。

公开(公告)号：US06316307B1

公开(公告)日：2001-11-13

申请号：US09608891

申请日：2000-06-30

申请人： Kee Jeung Lee ,  Kwang Chul Joo

发明人： Kee Jeung Lee ,  Kwang Chul Joo

IPC分类号： H01L218242

CPC分类号： H01L28/40 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02356 ,  H01L21/3145 ,  H01L27/1085 ,  H01L28/75 ,  H01L28/84

摘要： Disclosed is a method of forming a capacitor for a semiconductor memory device according to the present invention. The method includes the steps of: forming a lower electrode on a semiconductor substrate; performing a surface-treatment process to prevent a natural oxide layer from generating on the surface of the lower electrode; forming a TaON layer on the upper part of the surface-treated lower electrode by a reaction of Ta chemical vapor, O2 gas and NH3 gas; crystallizing the TaON layer; and forming an upper electrode on the upper part of the TaON layer, wherein the TaON layer is formed in a low pressure chemical vapor deposition (LPCVD) chamber equipped with a shower head injecting Ta chemical vapor, O2 gas and NH3 gas on an upper part thereof and at a temperature of 300 to 600° C. with pressure of 0.1 to 10 Torr; wherein the TaON layer is formed in the LPCVD chamber that a first injector to which Ta chemical vapor and O2 gas are injected and formed at one side-wall of the TaON layer and a second injector to which NH3 gas is injected and formed at the other side-wall opposed to the first injector, thereby injecting reaction gases in a counter-flow state, and the TaON layer is formed at a temperature of 300 to 600° C. with pressure of 0.1 to 10 Torr; wherein the TaON layer is formed in the LPCVD chamber that a first injector to which Ta chemical vapor and O2 gas are injected and formed at one side-wall of the TaON layer and a second injector to which NH3 gas is injected and formed at the other side-wall opposed to the first injector, thereby injecting reaction gases in a counter-flow state, and the TaON layer is formed at a temperature of 300 to 600° C. with pressure of 0.1 to 10 Torr.

摘要翻译： 公开了一种形成根据本发明的半导体存储器件的电容器的方法。 该方法包括以下步骤：在半导体衬底上形成下电极; 执行表面处理工艺以防止在下电极的表面上产生自然氧化物层; 通过Ta化学气相，O 2气和NH 3气的反应在表面处理的下电极的上部形成TaON层; 结晶TaON层; 在所述TaON层的上部形成上部电极，其中，所述TaON层形成在配备有在上部注入Ta化学蒸气，O 2气体和NH 3气体的喷淋头的低压化学气相沉积（LPCVD）室 温度为300〜600℃，压力为0.1〜10乇; 其中在LPCVD室中形成TaON层，在TaON层的一个侧壁处注入和形成Ta化学气体和O 2气体的第一喷射器，在另一个侧面形成NH 3气体的第二喷射器 侧壁与第一喷射器相对，从而以反流状态注入反应气体，并且在压力为0.1至10托的300至600℃的温度下形成TaON层; 其中在LPCVD室中形成TaON层，在TaON层的一个侧壁处注入和形成Ta化学气体和O 2气体的第一喷射器，在另一个侧面形成NH 3气体的第二喷射器 与第一喷射器相对的侧壁，从而以反流状态注入反应气体，并且在300至600℃的温度下以0.1至10托的压力形成TaON层。

公开(公告)号：US20010014510A1

公开(公告)日：2001-08-16

申请号：US09751843

申请日：2001-01-02

发明人： Dong Su Park ,  Byoung Kwon Ahn

IPC分类号： H01L021/8234 ,  H01L021/8244 ,  H01L021/8242 ,  H01L021/20

CPC分类号： H01L21/02183 ,  C23C16/308 ,  H01L21/0228 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/02356 ,  H01L21/31604 ,  H01L27/1085 ,  H01L28/40 ,  H01L28/91

摘要： A capacitor for a semiconductor device is manufactured by forming a lower structure on a semiconductor device, forming a lower electrode on the lower structure of the semiconductor device, forming a dielectric thin film by depositing an amorphous TaON film on the surface of the lower electrode, and supplying a Ta source gas in a mono-pulse manner and continuously supplying a reaction gas even when the Ta source gas is not supplied, and forming an upper electrode on the upper portion of the dielectric thin film.

摘要翻译： 通过在半导体器件上形成下部结构，在半导体器件的下部结构上形成下部电极，通过在下部电极的表面上沉积非晶形的TaON膜来形成电介质薄膜，制造半导体器件的电容器， 并且即使在不供给Ta源气体的情况下也以单脉冲方式供给Ta源气体并连续地供给反应气体，并且在电介质薄膜的上部形成上电极。

公开(公告)号：US06229166B1

公开(公告)日：2001-05-08

申请号：US09198374

申请日：1998-11-24

申请人： Byung-hee Kim ,  Hong-bae Park

发明人： Byung-hee Kim ,  Hong-bae Park

IPC分类号： H01L2976

CPC分类号： H01L27/11502 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02356 ,  H01L21/02362 ,  H01L27/11507 ,  H01L28/56

摘要： A ferroelectric random access memory (FRAM) device, and a fabrication method therefor, includes seed layers above and below a ferroelectric layer. The seed layers formed above and below faces of the ferroelectric layer can prevent an imprint phenomenon from being generated in a ferroelectric capacitor by making the characteristics of the upper and lower interfaces of the ferroelectric layer be the same. This is accomplished by providing upper and lower seed layers that are crystallized prior to the ferroelectric layer during a thermal treatment. This results in crystallization occurring from the upper and lower faces to the center of the ferroelectric layer, making the characteristics of the upper and lower interfaces of the ferroelectric layer the same, thereby improving ferroelectric capacitor characteristics.

公开(公告)号：US6143366A

公开(公告)日：2000-11-07

申请号：US220824

申请日：1998-12-24

申请人： Chung Hsin Lu

发明人： Chung Hsin Lu

IPC分类号： C23C18/12 ,  H01L21/314 ,  H01L21/316 ,  B05D3/02 ,  C25C5/50

CPC分类号： H01L21/31691 ,  C23C18/1208 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02356 ,  H01L41/314

摘要： A process is disclosed for reducing the crystallization temperature of amorphous or partially crystallized ceramic films by providing a higher pressure under which the crystallization of the amorphous or partially crystallized ceramic films can be significantly enhanced. The present invention not only improves quality, performance and reliability of the ceramic films, but also reduces the cost for production. By lowering the crystallization temperature, the cost for thermal energy consumed during the crystallization process is greatly reduced. In addition, the interaction or interdiffusion occurring between films and substrates is significantly suppressed or essentially prevented, avoiding the off-stoichiometry and malfunction of thin films, which usually occur in the conventional high-temperature crystallization processes. The process of present invention also decreases the grain size of formed films, thus reducing the roughness of films and producing relatively smooth, good quality films. This process made possible the fabrication of ceramic films with larger area at substantially lower temperatures without using other excitation energy such as laser, ion beam or electron beam, and is applicable to very large scale integrated circuit technologies. The present invention finds broad applications including manufacturing electronic and optical devices such as ferroelectric memories, capacitors, actuators, piezoelectric transducers, pyroelectric sensors, gas-sensors, electro-optic displays, electro-optic switching, non-liner optical devices, and reflective/antireflective coating, etc.

摘要翻译： 公开了一种通过提供更高压力来降低无定形或部分结晶的陶瓷膜的结晶温度的方法，在该压力下非晶或部分结晶的陶瓷膜的结晶可以显着增强。 本发明不仅提高了陶瓷膜的质量，性能和可靠性，而且降低了生产成本。 通过降低结晶温度，结晶过程中消耗的热能的成本大大降低。 此外，膜和衬底之间发生的相互作用或相互扩散被显着地抑制或基本上被防止，从而避免了在常规高温结晶过程中通常发生的薄膜的偏离化学计量和故障。 本发明的方法还降低了成膜的晶粒尺寸，从而降低了膜的粗糙度并产生了相对光滑的高质量的膜。 该方法可以在不使用诸如激光，离子束或电子束的其它激发能的情况下制造具有较大面积的陶瓷膜，并且适用于非常大规模的集成电路技术。 本发明广泛应用于电子和光学器件如铁电存储器，电容器，致动器，压电换能器，热电传感器，气体传感器，电光显示器，电光开关，非线性光学器件和反射/ 防反射涂层等

公开(公告)号：US6110531A

公开(公告)日：2000-08-29

申请号：US892485

申请日：1997-07-14

申请人： Carlos A. Paz de Araujo ,  Larry D. McMillan ,  Narayan Solayappan ,  Jeffrey W. Bacon

发明人： Carlos A. Paz de Araujo ,  Larry D. McMillan ,  Narayan Solayappan ,  Jeffrey W. Bacon

IPC分类号： B05D1/00 ,  B05D1/04 ,  B05D3/04 ,  B05D7/24 ,  C23C4/12 ,  C23C16/02 ,  C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/46 ,  C23C16/48 ,  C23C16/52 ,  C23C16/56 ,  C23C18/12 ,  C23C18/14 ,  C23C26/02 ,  C30B7/00 ,  C30B25/02 ,  H01C7/10 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L27/108 ,  H01L27/115 ,  H01L41/24 ,  H05K3/10 ,  C23C16/18 ,  H01L21/31

CPC分类号： C23C16/45565 ,  B05D1/00 ,  B05D1/007 ,  B05D1/04 ,  B05D1/60 ,  B05D3/0493 ,  C23C16/0218 ,  C23C16/40 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/4486 ,  C23C16/45561 ,  C23C16/4558 ,  C23C16/46 ,  C23C16/482 ,  C23C16/52 ,  C23C16/56 ,  C23C26/02 ,  C23C4/123 ,  C30B25/02 ,  C30B29/68 ,  C30B7/00 ,  C30B7/005 ,  H01C7/1013 ,  H01L21/02197 ,  H01L21/02274 ,  H01L21/02356 ,  H01L27/10805 ,  H01L27/11502 ,  H01L28/56 ,  H01L28/60 ,  H01L41/1871 ,  H01L41/316 ,  H01L28/55 ,  H05K3/105

摘要： A mist is generated by a venturi from liquid precursors containing compounds used in chemical vapor deposition, transported in carrier gas through tubing at ambient temperature, passed into a heated zone where the mist droplets are gasified at a temperature of between 100.degree. C. and 200.degree. C., which is lower than the decomposition temperature of the precursor compounds. The gasified liquid is injected through an inlet assembly into a deposition reactor in which there is a substrate heated to from 400.degree. C. to 600.degree. C., on which the gasified compounds decompose and form a thin film of layered superlattice compound.

摘要翻译： 由文氏管产生的气雾包含化学气相沉积中使用的化合物的液体前体，在载气中通过管道在环境温度下运输，并通入加热区，雾化气滴在100℃至200℃的温度下气化 ℃，其低于前体化合物的分解温度。 将气化液体通过入口组件注入到沉积反应器中，其中存在加热至400℃至600℃的基底，气化的化合物在其上分解并形成层状超晶格化合物的薄膜。

公开(公告)号：US5009926A

公开(公告)日：1991-04-23

申请号：US522126

申请日：1990-05-11

申请人： Hisashi Fukuda

发明人： Hisashi Fukuda

IPC分类号： H01L21/31 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/316

CPC分类号： H01L21/02046 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02312 ,  H01L21/02356 ,  H01L21/3105 ,  H01L21/31662

摘要： In a method of forming an insulating film on a substrate wherein a substrate is cleaned by heating it in an atmosphere of a reducing gas, and heating it in an oxidizing gas, and then growing an insulating film by heating the substrate in an atmosphere of a gas used to grow the film in the same reaction chamber, the insulating film is grown in stages and an insulating film grown in each stage is crystallized by heat treatment with a temperature higher than the heat treatment for the film growth. This can be accomplished by interposing a heat treatment with the higher temperature between successive film growth stages, or by using a higher temperature for the film growth for each stage with a temperature higher than that for the film growth in the preceding stage.