公开(公告)号：US20150255960A1

公开(公告)日：2015-09-10

申请号：US14641093

申请日：2015-03-06

Applicant: nLIGHT Photonics Corporation

Inventor： Manoj Kanskar

IPC: H01S5/40 ,  G02B27/30 ,  H01S5/024 ,  G02B5/09 ,  G02B6/42 ,  H01S5/022 ,  H01S5/00 ,  G02B5/10

CPC classification number: G02B5/09 ,  G02B5/10 ,  G02B6/4204 ,  G02B6/4296 ,  G02B27/0905 ,  G02B27/14 ,  G02B27/30 ,  H01S3/08059 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/3054 ,  H01S5/4031 ,  H01S5/4043 ,  H01S5/4062

Abstract: An apparatus includes at least one multijunction diode laser situated to emit a plurality of beams along respective mutually parallel propagation axes, each beam having an associated mutually parallel slow axes and associated collinear fast axes, a fast axis collimator situated to receive and collimate the plurality of beams along the corresponding fast axes so as to produce corresponding fast axis collimated beams that propagate along associated non-parallel axes, and a reflector situated to receive the plurality of fast axis collimated beams and to reflect the beams so that the reflected fast axis collimated beams propagate along substantially parallel axes.

Abstract translation: 一种装置包括至少一个多结二极管激光器，其被设置为沿着相应的相互平行的传播轴发射多个光束，每个光束具有相关联的相互平行的慢轴和相关联的快速轴线，快轴准直器被定位成接收和准直多个 沿着相应的快轴进行光束，以便产生沿相关联的非平行轴传播的对应的快轴准直光束;以及反射器，其被设置为接收多个快轴准直光束并反射光束，使得反射的快轴准直光束 沿着大致平行的轴传播。

公开(公告)号：US09130353B2

公开(公告)日：2015-09-08

申请号：US13635594

申请日：2011-01-31

Applicant: Alfred Lell ,  Martin Strassburg

Inventor： Alfred Lell ,  Martin Strassburg

IPC: H01L21/00 ,  H01S5/40 ,  H01S5/022 ,  H01S5/042 ,  H01S5/20 ,  H01S5/30 ,  H01S5/323

CPC classification number: H01S5/4043 ,  H01S5/0224 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/2059 ,  H01S5/3013 ,  H01S5/3095 ,  H01S5/323 ,  H01S5/32341 ,  H01S5/34313 ,  H01S5/405 ,  H01S5/4087 ,  H01S5/4093 ,  H01S2301/173

Abstract: A laser diode arrangement having at least one semiconductor substrate, having at least two laser stacks each having an active zone and having at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.

Abstract translation: 一种具有至少一个半导体衬底的激光二极管装置，具有至少两个激光器堆叠，每个激光器堆叠具有活性区并具有至少一个中间层。 激光器堆叠和中间层在半导体衬底上单片生长。 中间层布置在激光堆之间。 第一激光器堆叠的活动区域可以与至少一个另外的激光堆叠的活动区分开地被致动。

公开(公告)号：US08928802B2

公开(公告)日：2015-01-06

申请号：US13001385

申请日：2009-06-25

Applicant: Peter Peuser ,  Klaus Schertler

Inventor： Peter Peuser ,  Klaus Schertler

IPC: H04N5/222 ,  H04N9/09 ,  G03B15/03 ,  H01S5/40 ,  H04N5/235 ,  H01S5/00 ,  H01S5/022

CPC classification number: G03B15/03 ,  G06T2207/20208 ,  H01S5/005 ,  H01S5/02248 ,  H01S5/4043 ,  H01S5/4087 ,  H04N5/2354 ,  H04N5/2355

Abstract: The invention relates to an apparatus and a method for producing dynamic range increase (DRI) or a high dynamic range (HDR) pictures, in which differently exposed individual images are combined by image processing to form an HDR or DRI picture. In order to also allow moving objects to be recorded more easily, and to overcome the restrictions relating to lack of mobility of a recording device, the exposure can be carried out by laser radiation containing wavelengths at different intensities.

Abstract translation: 本发明涉及用于产生动态范围增加（DRI）或高动态范围（HDR）图像的装置和方法，其中通过图像处理组合不同的曝光的个体图像以形成HDR或DRI图像。 为了更容易地记录移动物体的记录，为了克服与记录装置的移动性不相关的限制，曝光可以通过包含不同强度的波长的激光辐射进行。

公开(公告)号：US08567960B2

公开(公告)日：2013-10-29

申请号：US12561101

申请日：2009-09-16

Applicant: Hussein S. El-Ghoroury ,  Robert G. W. Brown ,  Dale A. McNeill ,  Huibert DenBoer ,  Andrew J. Lanzone

Inventor： Hussein S. El-Ghoroury ,  Robert G. W. Brown ,  Dale A. McNeill ,  Huibert DenBoer ,  Andrew J. Lanzone

IPC: G03B21/20 ,  G03B21/26 ,  G02B27/20 ,  H01S3/10 ,  H01S5/00 ,  H01L21/00 ,  H01L29/06 ,  H01L31/00

CPC classification number: H01S5/4043 ,  B82Y20/00 ,  G09G3/2018 ,  G09G3/32 ,  G09G2300/0842 ,  G09G2310/0235 ,  G09G2340/06 ,  H01S5/02276 ,  H01S5/105 ,  H01S5/18 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4093 ,  H04N9/3161

Abstract: Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.

公开(公告)号：US08243770B2

公开(公告)日：2012-08-14

申请号：US13278533

申请日：2011-10-21

Applicant: Hussein S. El-Ghoroury ,  Robert G. W. Brown ,  Dale A. McNeill ,  Huibert DenBoer ,  Andrew J. Lanzone

Inventor： Hussein S. El-Ghoroury ,  Robert G. W. Brown ,  Dale A. McNeill ,  Huibert DenBoer ,  Andrew J. Lanzone

IPC: H01S5/00

CPC classification number: H01S5/4043 ,  B82Y20/00 ,  G09G3/2018 ,  G09G3/32 ,  G09G2300/0842 ,  G09G2310/0235 ,  G09G2340/06 ,  H01S5/02276 ,  H01S5/105 ,  H01S5/18 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4093 ,  H04N9/3161

Abstract: Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.

Abstract translation: 发射量子光子成像器由数字可寻址多色像素的空间阵列组成。 每个像素是多个半导体激光二极管的垂直堆叠，每个半导体激光二极管可以产生不同颜色的激光。 在每个多色像素内，通过耦合到包括成像器装置的多个激光二极管中的每一个的光限制区域的多个垂直波导，从二极管堆产生的光被垂直于成像器装置的平面发射。 包括单个像素的每个激光二极管是可单独寻址的，使得每个像素可以在每个颜色的任何所需的开/关占空比下同时发射与激光二极管相关联的颜色的任何组合。 每个单色多色像素可以通过控制其各自的激光二极管的开/关占空比同时发出所需的颜色和亮度值。

公开(公告)号：US08098704B2

公开(公告)日：2012-01-17

申请号：US12348573

申请日：2009-01-05

Applicant: Masayuki Hata ,  Yasuyuki Bessho ,  Yasuhiko Nomura ,  Masayuki Shono ,  Kenji Nagatomi ,  Yoichi Tsuchiya

Inventor： Masayuki Hata ,  Yasuyuki Bessho ,  Yasuhiko Nomura ,  Masayuki Shono ,  Kenji Nagatomi ,  Yoichi Tsuchiya

IPC: H01S5/00

CPC classification number: H01S5/4043 ,  H01L2224/48091 ,  H01S5/02212 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/4087 ,  H01L2924/00014

Abstract: A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in a red semiconductor laser device and the infrared emission point. A blue-violet laser beam, a red laser beam, and an infrared laser beam respectively emitted from the blue-violet emission point, the red emission point, and the infrared emission point are introduced into a photodetector after being incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a λ/4 plate, an objective lens, a cylindrical lens, and an optical axis correction element.

Abstract translation: 单片红/红外半导体激光器件连接到蓝紫色半导体激光器件。 蓝紫色半导体激光装置中的蓝紫色发射点与红外线半导体激光装置的红外线发射点之间的距离明显短于红色半导体激光装置的红色发射点与红外线发射点 。 从蓝紫色发射点，红色发射点和红外线发射点分别发射的蓝紫色激光束，红色激光束和红外激光束被入射到光盘上之后被引入光电检测器 包括偏振分束器，准直透镜，光束扩展器，λ/ 4板，物镜，柱面透镜和光轴校正元件的光学系统。

公开(公告)号：US20110266567A1

公开(公告)日：2011-11-03

申请号：US12745686

申请日：2008-10-24

Applicant: Peter Brick ,  Uwe Strauss

Inventor： Peter Brick ,  Uwe Strauss

IPC: H01L33/58

CPC classification number: H01S5/1082 ,  H01S5/0035 ,  H01S5/10 ,  H01S5/1017 ,  H01S5/204 ,  H01S5/3095 ,  H01S5/32 ,  H01S5/3215 ,  H01S5/4043 ,  H01S2301/18 ,  H01S2301/185 ,  H01S2301/206

Abstract: A method for manufacturing a radiation-emitting component (1) in which a field distribution of a near field (101, 201) in a direction perpendicular to a main emission axis of the component is specified. From the field distribution of the near field, an index of refraction profile (111, 211, 511) along this direction is determined. A structure is determined for the component such that the component will have the previously determined index of refraction profile. The component is constructed according to the previously determined structure. A radiation-emitting component is also disclosed.

Abstract translation: 一种用于制造辐射发射部件（1）的方法，其中指定了在与部件的主发射轴垂直的方向上的近场（101,201）的场分布。 根据近场的场分布，确定沿该方向的折射率分布（111,211,511）的折射率。 确定组件的结构，使得组件将具有先前确定的折射率曲线。 该组件根据先前确定的结构构造。 还公开了一种辐射发射元件。

公开(公告)号：US07916766B2

公开(公告)日：2011-03-29

申请号：US12511218

申请日：2009-07-29

Applicant: Masayuki Hata ,  Yasuhiko Nomura ,  Kyoji Inoshita

Inventor： Masayuki Hata ,  Yasuhiko Nomura ,  Kyoji Inoshita

IPC: H01S5/00 ,  H01S3/097

CPC classification number: B82Y20/00 ,  H01L2224/32145 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4043 ,  H01S5/4087 ,  H01S2302/00

Abstract: A first semiconductor laser element is formed on a surface of the first substrate and including a first active layer. A second semiconductor laser element is bonded to the first semiconductor laser element with a first insulating film interposed therebetween. A first electrode is connected to the first semiconductor laser element. A second electrode is arranged on the surface of the first semiconductor laser element with the first insulating film interposed therebetween and connected to the second semiconductor laser element. The first semiconductor laser element has an optical waveguide formed in a region where the second semiconductor laser element is not bonded while the first electrode is arranged on the region, and the second electrode is formed to extend from between the second semiconductor laser element and first insulating film toward the region.

Abstract translation: 第一半导体激光元件形成在第一基板的表面上并且包括第一有源层。 第二半导体激光元件与第一半导体激光元件接合，其间插入有第一绝缘膜。 第一电极连接到第一半导体激光元件。 第二电极设置在第一半导体激光元件的表面上，第一绝缘膜插入其中并连接到第二半导体激光元件。 第一半导体激光元件具有在第一半导体激光元件与第一绝缘体之间形成第一电极而形成在第二半导体激光元件未被接合的区域的光波导， 电影向该地区。

公开(公告)号：US20100296538A1

公开(公告)日：2010-11-25

申请号：US12679892

申请日：2008-08-29

Applicant: Matthias Sabathil ,  Peter Brick ,  Christoph Eichler

Inventor： Matthias Sabathil ,  Peter Brick ,  Christoph Eichler

IPC: H01S5/343

CPC classification number: H01S5/041 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/34 ,  H01S5/4043

Abstract: An optoelectronic component (1) is specified, comprising a semiconductor body (2) with a semiconductor layer sequence. The semiconductor layer sequence of the semiconductor body (2) comprises a pump region (3) provided for generating a pump radiation and an emission region (4) provided for generating an emission radiation. The emission region (4) and the pump region (3) are arranged one above the other. The pump radiation optically pumps the emission region (4) during operation of the optoelectronic component (1). The emission radiation emerges from the semiconductor body (2) with the semiconductor layer sequence in a lateral direction during operation of the optoelectronic component (1).

Abstract translation: 规定了光电子部件（1），其包括具有半导体层序列的半导体本体（2）。 半导体本体（2）的半导体层序列包括用于产生泵浦辐射的泵浦区域（3）和用于产生发射辐射的发射区域（4）。 发射区域（4）和泵浦区域（3）彼此上下排列。 在光电子部件（1）的操作期间，泵浦辐射光学泵浦发射区域（4）。 在光电子部件（1）的操作期间，发射辐射从半导体本体（2）出射，半导体层序列沿横向方向。

公开(公告)号：US07829902B2

公开(公告)日：2010-11-09

申请号：US12486600

申请日：2009-06-17

Applicant: Hussein S. El-Ghoroury ,  Robert G. W. Brown ,  Dale A. McNeill ,  Huibert DenBoer ,  Andrew J. Lanzone

Inventor： Hussein S. El-Ghoroury ,  Robert G. W. Brown ,  Dale A. McNeill ,  Huibert DenBoer ,  Andrew J. Lanzone

IPC: H01L33/00

CPC classification number: H01S5/4043 ,  B82Y20/00 ,  G09G3/2018 ,  G09G3/32 ,  G09G2300/0842 ,  G09G2310/0235 ,  G09G2340/06 ,  H01S5/02276 ,  H01S5/105 ,  H01S5/18 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4093 ,  H04N9/3161

Abstract: Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.

Abstract translation: 发射量子光子成像器由数字可寻址多色像素的空间阵列组成。 每个像素是多个半导体激光二极管的垂直堆叠，每个半导体激光二极管可以产生不同颜色的激光。 在每个多色像素内，通过耦合到包括成像器装置的多个激光二极管中的每一个的光限制区域的多个垂直波导，从二极管堆产生的光被垂直于成像器装置的平面发射。 包括单个像素的每个激光二极管是可单独寻址的，使得每个像素可以在每个颜色的任何所需的开/关占空比下同时发射与激光二极管相关联的颜色的任何组合。 每个单色多色像素可以通过控制其各自的激光二极管的开/关占空比同时发出所需的颜色和亮度值。