摘要:
Thin-film microcircuit structures passivated with silicon nitride are provided in which included electrical components containing nickel, chromium or other nitride-forming metals are encapsulated in an oxide material, preferably silicon oxide. The metal-containing components are thus prevented from reacting with the silicon nitride passivation coating during through-passivation laser trimming of the components.
摘要:
The invention is an electrical component with a body element comprising an organic substrate portion and a laser formed, resistor portion carburized thereon. A first electrical conductor is electrically connected to one location on the resistor portion so as to form one terminal for connection to an electrical circuit and a second electrical conductor is electrically connected to the resistor portion at a different location so as to form another terminal for connection to the electrical circuit.
摘要:
A thin film path of medium resistivity provided by a strip of tantalum by which a design parameter of an electronic component is determined is modified by making contact with the path by an electrode having an electrolyte at its tip in passing an anodizing current into the path through the electrode that is much smaller in value than the normal current flowing through the path under design conditions of operation. In consequence, the current injected to produce chemical change in the resistance has a negligible effect on the characteristics of operation of the component and the component can have operating conditions applied to it during the trimming process can be carried while the component is under operating conditions and the parameter to be adjusted is being measured, so that the measurements of the parameter can control the current injected through the electrode so as to shut it off when the desired value of the measured parameter is reached. When the difference between actual and desired values reaches a certain small value, it is advantageous to switch over the current source for the electrode to a lower value of current in order to make possible a closer approach to the design value.
摘要:
A thin film of a high resistivity metal such as Ta, Ti, Mo or Nb is formed on a substrate. The side faces of the thin resistive film are surrounded by, and at least a greater part of the top surface of the thin resistive film is covered with an insulating substance which is a compound, such as an oxide or nitride of the high resistivity metal. The thin resistive film and the insulating substance form a substantially flat layer.
摘要:
A FILM-FORMING METAL AND A CERAMIC ARE CO-SPUTTERED ON A GLASS SUBSTRATE TO FORM AN ANODIZABLE CERMET FILM WHOSE RESISTANCE, AS MEASURED BETWEEN A PAIR OF CONDUCTIVE TERMINALS DEPOSITED THEREON, IS LESS THAN A PREDETERMINED VALUE. THE FILM IS ANODIZED ELECTROLYTICALLY TO INCREASE OR "TRIM" ITS TERMINAL RESISTANCE TO THE PREDETERMINED VALUE. INTERACTION BETWEEN THE CERMIC AND THE ANODICALLY-GROWN OXIDE OF THE FILM-FORMING METAL DURING THE ANODIZING STEP
STABILIZES THE TERMINAL RESISTANCE SO THAT THE TRIMMED VALUE IS MAINTAINED WITHIN THE CLOSE TOLERANCE DURING SUBSEQUENT TERMAL AGING AND OPERATION.
摘要:
A COMPUTER-CONTROLLED ANODIZATION PROCESS FOR TRIMMING THIN-FILM RESISTORS, AND THE LIKE, TO VALVE. BRIEFLY, THE INITIAL RESISTANCE OF THE DEVICE TO BE TRIMMED IS MEASURED AND A TRIAL ANODIZATION CONDUCTED. NEXT, THE RESISTANCE OF THE DEVICE IS RE-MEASURED AND THE PARAMETERS OF THE EQUATION CHARACTERIZING THE ANODIZATION PROCESS CALCULATED. THE TIME REQUIRED TO ATTAIN THE DESIRED RESISTANCE
TION IS TERMINATED PRIOR TO EXPIRATION OF THIS TIME INTERVALUE IS PREDICTED FROM THE ABOVE EQUATION, BUT ANODIZAVAL. THE PARAMETERS OF THE ANODIZATION ARE THEN RE-CALCULATED, ONE OR MORE TIMES, MAKING ADAPTIVE CHANGES TO THE ALGORITHM USED TO RAPIDLY CONCERGE THE PROCESS TOWARDS THE DESIRED RESISTANCE VALUE.
摘要:
A METHOD OF MANUFACTURING A THIN FILM RESISTOR IN WHICH A NUMBER OF METAL LAYERS ARE APPLIED TO AN INSULATING MATERIAL AND EACH METAL LAYER IS COMPLETELY OXIDIZED BEFORE THE SUCCEEDING LAYER IS APPLIED.