Passivated thin-film hybrid circuits
    81.
    发明授权
    Passivated thin-film hybrid circuits 失效
    钝化薄膜混合电路

    公开(公告)号:US4288776A

    公开(公告)日:1981-09-08

    申请号:US110562

    申请日:1980-01-09

    申请人: Robert E. Holmes

    发明人: Robert E. Holmes

    摘要: Thin-film microcircuit structures passivated with silicon nitride are provided in which included electrical components containing nickel, chromium or other nitride-forming metals are encapsulated in an oxide material, preferably silicon oxide. The metal-containing components are thus prevented from reacting with the silicon nitride passivation coating during through-passivation laser trimming of the components.

    摘要翻译: 提供了用氮化硅钝化的薄膜微电路结构,其中包含镍,铬或其它形成氮化物的金属的电子部件被包封在氧化物材料,优选氧化硅中。 因此,在组件的钝化激光修整期间,防止含金属成分与氮化硅钝化涂层反应。

    Laser formed resistor elements
    82.
    发明授权
    Laser formed resistor elements 失效
    激光形成电阻元件

    公开(公告)号:US4286250A

    公开(公告)日:1981-08-25

    申请号:US36811

    申请日:1979-05-04

    摘要: The invention is an electrical component with a body element comprising an organic substrate portion and a laser formed, resistor portion carburized thereon. A first electrical conductor is electrically connected to one location on the resistor portion so as to form one terminal for connection to an electrical circuit and a second electrical conductor is electrically connected to the resistor portion at a different location so as to form another terminal for connection to the electrical circuit.

    摘要翻译: 本发明是一种电子部件,其主体元件包括有机基底部分和形成的激光,其上渗碳的电阻部分。 第一电导体电连接到电阻器部分上的一个位置,以形成用于连接到电路的一个端子,并且第二电导体在不同位置处电连接到电阻器部分,以形成用于连接的另一端子 到电路。

    Method of trimming electronic components having an integrated circuit to
design specification
    83.
    发明授权
    Method of trimming electronic components having an integrated circuit to design specification 失效
    具有集成电路的电子部件的修整方法来设计规格

    公开(公告)号:US4134808A

    公开(公告)日:1979-01-16

    申请号:US870470

    申请日:1978-01-18

    CPC分类号: H01L21/707

    摘要: A thin film path of medium resistivity provided by a strip of tantalum by which a design parameter of an electronic component is determined is modified by making contact with the path by an electrode having an electrolyte at its tip in passing an anodizing current into the path through the electrode that is much smaller in value than the normal current flowing through the path under design conditions of operation. In consequence, the current injected to produce chemical change in the resistance has a negligible effect on the characteristics of operation of the component and the component can have operating conditions applied to it during the trimming process can be carried while the component is under operating conditions and the parameter to be adjusted is being measured, so that the measurements of the parameter can control the current injected through the electrode so as to shut it off when the desired value of the measured parameter is reached. When the difference between actual and desired values reaches a certain small value, it is advantageous to switch over the current source for the electrode to a lower value of current in order to make possible a closer approach to the design value.

    摘要翻译: 由电子元件的设计参数确定的由钽带提供的中等电阻率的薄膜路径是通过在其尖端处具有电解质的电极与路径接触而改变的,所述电极通过阳极氧化电流进入通路 该电极的值比在设计操作条件下流过路径的正常电流小得多。 因此,注入以产生电阻的化学变化的电流对组件的操作特性具有可忽略的影响,并且组件可以在修整过程中施加的操作条件可以在组件处于操作条件下进行,并且 正在测量要调节的参数,使得参数的测量可以控制通过电极注入的电流,以便在达到测量参数的期望值时关闭电流。 当实际值和期望值之间的差值达到一定的小值时,有利的是将电极的电流源切换到较低的电流值,以便使设计值更接近。

    Method for producing a thin film passive circuit element
    84.
    发明授权
    Method for producing a thin film passive circuit element 失效
    生产薄膜无源电路元件的方法

    公开(公告)号:US3862017A

    公开(公告)日:1975-01-21

    申请号:US35395973

    申请日:1973-04-24

    摘要: A thin film of a high resistivity metal such as Ta, Ti, Mo or Nb is formed on a substrate. The side faces of the thin resistive film are surrounded by, and at least a greater part of the top surface of the thin resistive film is covered with an insulating substance which is a compound, such as an oxide or nitride of the high resistivity metal. The thin resistive film and the insulating substance form a substantially flat layer.

    摘要翻译: 在基板上形成诸如Ta,Ti,Mo或Nb的高电阻率金属的薄膜。 薄电阻膜的侧面由薄电阻膜的顶表面的至少大部分被绝缘物质覆盖,该绝缘物质是诸如高电阻率金属的氧化物或氮化物的化合物。 薄电阻膜和绝缘物质形成基本平坦的层。