公开(公告)号：US20190020169A1

公开(公告)日：2019-01-17

申请号：US15716827

申请日：2017-09-27

申请人： DICON FIBEROPTICS, INC.

发明人： Seng Fatt Liew ,  Ho-Shang Lee

IPC分类号： H01S3/063 ,  G02B6/12 ,  H01S3/0941 ,  H01S3/067 ,  G02B6/138

摘要： A solid-state optical amplifier chip is described, with improved pumping, in which pump light from one or more solid-state light sources is coupled efficiently into the doped areas of the chip, resulting in amplification of an optical signal. The optical signal is carried in the core of an optical waveguide. Rare-earth elements are used as dopants, primarily in the cladding of the optical signal's waveguide core, in order to provide amplification of the optical signal through stimulated emission. A variety of waveguide structures are described for routing and distributing the pump light to the doped areas of the chip.

公开(公告)号：US09933573B2

公开(公告)日：2018-04-03

申请号：US15081294

申请日：2016-03-25

申请人： DiCon Fiberoptics, Inc.

发明人： Jeffrey Boryean Lee ,  Ho-Shang Lee

IPC分类号： G02B6/293 ,  H04J14/02 ,  G02B6/32

CPC分类号： G02B6/29313 ,  G02B6/29311 ,  G02B6/29395 ,  G02B6/32 ,  H04J14/0212

摘要： A tunable optical device uses a diffraction grating to angularly disperse a collimated beam carrying multiple wavelengths into multiple individually collimated wavelength beams, and then refocuses each of the individual collimated beams to its own focusing point on a moving plate that is located in the region of the focus plane. One or more reflective dots on the moving plate then selectively reflect particular wavelength(s) back to a first output port. The unselected wavelengths are transmitted through the moving plate, where they are then recombined and sent to a second output port. In a typical optical network architecture, the selected wavelength(s) could be viewed as the dropped traffic at a node of the optical network, while the unselected wavelengths could be viewed as the express traffic that is being passed to another node of the network. The device can also be used as a wavelength or beam combiner as well as a splitter.

公开(公告)号：US09133990B2

公开(公告)日：2015-09-15

申请号：US13756282

申请日：2013-01-31

申请人： DiCon Fiberoptics, Inc.

发明人： Ho-Shang Lee ,  Brian I-Yuan Chiang ,  Junying Jonathan Lu ,  Robert Eric Schleicher

IPC分类号： F21K99/00 ,  F21V8/00 ,  H01L25/075 ,  H01L33/50 ,  F21Y101/02

CPC分类号： H05B33/0845 ,  F21K9/00 ,  F21K99/00 ,  F21V29/67 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2113/13 ,  F21Y2115/10 ,  G02B6/0068 ,  H01L25/0753 ,  H01L33/504 ,  H01L2924/0002 ,  H01L2933/0041 ,  H05B33/0863 ,  H01L2924/00

摘要： An LED array includes three or more strings of bare LEDs mounted in close proximity to each other on a substrate. The strings of LEDs emit light of one or more wavelengths of blue, indigo and/or violet light, with peak wavelengths that are less than 490 nm. Luminescent materials deposited on each of the LED chips in the array emit light of different wavelength ranges that are of longer wavelengths than and in response to light emissions from the LED chips. A control circuit applies currents to the strings of LEDs, causing the LEDs in the strings to emit light, which causes the luminescent materials to emit light. A user interface enables users to control the currents applied by the control circuit to the strings of LEDs to achieve a Correlated Color Temperature (CCT) value and hue that are desired by users, with CIE chromaticity coordinates that lie on, or near to the black body radiation curve. Preferably a transparent material is dispensed on the substrate between the LED semiconductor chips to substantially surround the LED semiconductor chips. Thereafter at least one layer containing luminescent materials is applied on the LED semiconductor chips and the transparent material.

摘要翻译： LED阵列包括在基板上彼此靠近安装的三个或更多个裸露的LED串。 LED串发射蓝色，靛蓝色和/或紫色光的一种或多种波长的光，峰值波长小于490nm。 沉积在阵列中的每个LED芯片上的发光材料发射不同波长范围的光，其具有比来自LED芯片的光发射更长的波长。 控制电路向LED串施加电流，使得串中的LED发光，这导致发光材料发光。 用户界面使用户能够控制由控制电路施加到LED串的电流，以实现用户期望的相关色温（CCT）值和色相，其中CIE色度坐标位于黑色或接近黑色 身体辐射曲线。 优选地，透明材料被分配在LED半导体芯片之间的基板上，以基本上围绕LED半导体芯片。 此后，在LED半导体芯片和透明材料上施加至少一层含有发光材料的层。

公开(公告)号：USD735385S1

公开(公告)日：2015-07-28

申请号：US29473631

申请日：2013-11-25

申请人： Hsiang-Yu Lee ,  Brent John Siebenaler

设计人： Hsiang-Yu Lee ,  Brent John Siebenaler

公开(公告)号：US09022598B2

公开(公告)日：2015-05-05

申请号：US13035705

申请日：2011-02-25

申请人： Jeffrey Lee

发明人： Jeffrey Lee

IPC分类号： F21V9/00 ,  G02B27/46

CPC分类号： F21V9/00 ,  G02B27/46 ,  Y10S362/80

摘要： One embodiment of the invention is directed to a light mixing illuminator for illuminating an object, comprising an array of light emitting elements wherein at least some of the elements emit light of different wavelengths. An optical device is employed that focuses the light from the elements to a Fourier plane of the device, wherein the light emitting elements are arranged so that at least the zero spatial frequency components of light of the different wavelengths from the elements substantially overlap in a region at the Fourier plane. An objective is used to project the region onto the object. A mask is used that selectively blocks some of spatial frequency components of light from the elements without blocking the zero spatial frequency components of light from reaching the object.

摘要翻译： 本发明的一个实施例涉及一种用于照亮物体的光混合照明器，包括一组发光元件，其中至少一些元件发射不同波长的光。 使用将来自元件的光聚焦到装置的傅立叶平面的光学装置，其中发光元件被布置成使得至少来自元件的不同波长的光的零空间频率分量在区域中基本上重叠 在傅里叶平面。 一个目标用于将该区域投影到对象上。 使用掩模，其选择性地阻挡来自元件的光的一些空间频率分量，而不阻挡光的零空间频率分量到达对象。

公开(公告)号：US20120043907A1

公开(公告)日：2012-02-23

申请号：US12860760

申请日：2010-08-20

申请人： Junying Jonathan Lu ,  Brian I-Yuan Chiang ,  Ho-Shang Lee

发明人： Junying Jonathan Lu ,  Brian I-Yuan Chiang ,  Ho-Shang Lee

IPC分类号： H05B41/24 ,  H05B37/02 ,  F21V9/00 ,  F21V5/00 ,  F21V7/00

CPC分类号： H05B37/0272 ,  A01G7/045 ,  F21K9/00 ,  F21S2/005 ,  F21V23/006 ,  F21V23/0435 ,  F21V29/51 ,  F21V29/70 ,  F21V29/76 ,  F21Y2105/10 ,  F21Y2113/13 ,  F21Y2115/10 ,  H05B33/0845 ,  Y02P60/149

摘要： A compact high-brightness LED grow light fixture is described for use in growing plants under artificial light, or as a supplement to natural sunlight. The LED grow light uses a densely-packed array of high-brightness light emitting diodes (LEDs) that are not individually packaged where the array behaves similarly to a point source of light. The LED chips are distributed laterally over an area, where the LED chips have light emitting surfaces for emitting light in directions transverse to said area, wherein the dimensions of the area do not exceed 25 mm. Adjacent chips of the array are preferably separated by less than about 0.2 mm. The extended point source LED array, with its lens and associated reflector, result in a concentrated, partially-collimated light source, such that the intensity of the light does not diminish rapidly as distance from the light source increases. Thus, foliage that is lower down on the plant will receive almost as much light energy as does foliage on the top of the plant. The compact LED grow light does not block much of the natural sunlight, making the LED grow light suitable for use as a supplement to natural sunlight. The LED array contains a plurality of LED strings that may be separately controlled, thereby allowing the spectral content of the LED grow light to be varied, to facilitate desired plant growth at various stages of plant life. Multiple wavelengths of LEDs may be used within each LED string, thereby allowing the ability to further optimize the spectral content of the LED grow light. Due to the compact size of the LED grow light, the light emitted at each of the multiple different wavelengths from the array is evenly distributed, when the objects being illuminated by the array are at a distance of less than about 6 feet or even less than 1 foot from the array. Flexible mounting options allow for the use of multiple compact LED grow lights within a single plant growing area, and also allow for side or bottom lighting of plant foliage, in addition to the more typical overhead lighting.

公开(公告)号：US08044427B2

公开(公告)日：2011-10-25

申请号：US12145395

申请日：2008-06-24

申请人： Wen-Herng Su ,  Junying Lu ,  Ho-Shang Lee

发明人： Wen-Herng Su ,  Junying Lu ,  Ho-Shang Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/483 ,  H01L33/005 ,  H01L33/60 ,  H01L2224/13 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/19107 ,  H05K1/053 ,  H05K1/162 ,  H05K1/183 ,  H05K2201/0116 ,  H05K2201/0179 ,  H05K2201/10106 ,  H05K2203/0315 ,  Y10S362/80 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49155 ,  Y10T29/53113 ,  H01L2924/00014 ,  H01L2924/00

摘要： This invention relates to the thermal management, extraction of light, and cost effectiveness of Light Emitting Diode, or LED, electrical circuits. An integrated circuit LED submount is described, for the packaging of high power LEDs. The LED submount provides high thermal conductivity while preserving electrical insulation. In particular, a process is described for anodizing a high thermal conductivity aluminum alloy sheet to form a porous aluminum oxide layer and a non-porous aluminum oxide layer. This anodized aluminum alloy sheet acts as a superior electrical insulator, and also provides surface morphology and mechanical properties that are useful for the fabrication of high-density and high-power multilevel electrical circuits.

摘要翻译： 本发明涉及发光二极管或LED电路的热管理，光提取和成本效益。 描述了集成电路LED基座，用于大功率LED的封装。 LED基座提供高导热性，同时保持电气绝缘。 特别地，描述了用于阳极氧化高导热性铝合金板以形成多孔氧化铝层和无孔氧化铝层的工艺。 该阳极氧化铝合金板作为优异的电绝缘体，并且还提供用于制造高密度和大功率多电平电路的表面形态和机械性能。

公开(公告)号：US07683380B2

公开(公告)日：2010-03-23

申请号：US11777987

申请日：2007-07-13

申请人： Cheng Tsin Lee ,  Qinghong Du ,  Jean-Yves Naulin

发明人： Cheng Tsin Lee ,  Qinghong Du ,  Jean-Yves Naulin

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L29/22 ,  H01L29/227 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L33/0079 ,  H01L33/14 ,  H01L33/22 ,  H01L33/387 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： In one embodiment of an epitaxial LED device, a buffer layer (e.g. dielectric layer) between the current spreading layer and the substitute substrate includes a plurality of vias and has a refractive index that is below that of the current spreading layer. A reflective metal layer between the buffer layer and the substitute substrate is connected to the current spreading layer through the vias in the buffer layer. The buffer layer separates the current spreading layer from the reflective metal layer. In yet another embodiment, stress management is provided by causing or preserving stress, such as compressive stress, in the LED so that stress in the LED is reduced when it experiences thermal cycles. In one implementation of this embodiment, a layer is attached to the LED and reflective metal layer, and causes or preserves stress in the LED along one or more directions parallel to an interface between the LED epitaxial layers so that stress in the LED is reduced in said one or more directions when temperature of the structure is increased.

摘要翻译： 在外延LED器件的一个实施例中，电流扩展层和替代衬底之间的缓冲层（例如电介质层）包括多个通孔并具有低于电流扩展层的折射率。 缓冲层和替代基板之间的反射金属层通过缓冲层中的通孔连接到电流扩散层。 缓冲层将电流扩散层与反射金属层分开。 在另一个实施例中，通过引起或保持LED中的应力（例如压缩应力）来提供应力管理，使得当经历热循环时LED中的应力减小。 在该实施例的一个实现中，一层附着到LED和反射金属层，并且沿着与LED外延层之间的界面平行的一个或多个方向引起或保持LED中的应力，使得LED中的应力减小 当结构的温度增加时表示一个或多个方向。

公开(公告)号：US20100032699A1

公开(公告)日：2010-02-11

申请号：US12186165

申请日：2008-08-05

申请人： Cheng Tsin Lee

发明人： Cheng Tsin Lee

IPC分类号： H01L33/00 ,  B32B37/10

CPC分类号： B32B37/1018 ,  B32B38/1866 ,  B32B2305/55 ,  B32B2309/02 ,  B32B2311/12 ,  B32B2311/24 ,  H01L33/0079 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42

摘要： In one embodiment of the invention, a bonding material is used to bond a substitute substrate to the LED, wherein the bonding material does not including gold or tin. The bonding material preferably includes gallium (Ga), such as a combination of Ga and Al or Cu. This bonding material has high thermal conductivity, high strength, high temperature stability and is low cost. In another embodiment of the invention, the substitute substrate is first thinned before it is bonded to the LED structure, so that the substitute substrate is flexible and conforms to the shape of the LED structure. In yet another embodiment of the invention, an apparatus is used for bonding a substitute substrate to a LED which comprises a plurality of semiconductor epitaxial layers, said semiconductor epitaxial layers having been grown on the growth substrate so that said semiconductor epitaxial layers are curved in shape. The apparatus comprises a conduit for evacuating a region near the substitute substrate on a side of the substitute substrate that is opposite to that of said semiconductor epitaxial layers. Gas pressure is applied on the semiconductor epitaxial layers, and the substitute substrate conforms to the shape of said semiconductor epitaxial layers as a result of pressure applied. A bonding material is used for bonding said substitute substrate to the semiconductor epitaxial layers.

摘要翻译： 在本发明的一个实施例中，使用接合材料将替代衬底粘合到LED，其中接合材料不包括金或锡。 接合材料优选包括镓（Ga），例如Ga和Al或Cu的组合。 该接合材料具有高导热性，高强度，高温稳定性，成本低廉。 在本发明的另一个实施例中，替代基板首先在结合到LED结构之前变薄，使得替代基板是柔性的并且符合LED结构的形状。 在本发明的另一个实施例中，一种装置用于将替代衬底接合到包括多个半导体外延层的LED，所述半导体外延层已经在生长衬底上生长，使得所述半导体外延层呈弯曲形 。 该装置包括用于将替代基板附近的区域排出在与所述半导体外延层的替代基板相反的一侧上的导管。 气体压力施加在半导体外延层上，并且由于施加压力，替代衬底符合所述半导体外延层的形状。 使用接合材料将所述替代基板接合到半导体外延层。

公开(公告)号：US20050035354A1

公开(公告)日：2005-02-17

申请号：US10641641

申请日：2003-08-14

申请人： Hui-Li Lin ,  Qinghong Du ,  Ho-Shang Lee

发明人： Hui-Li Lin ,  Qinghong Du ,  Ho-Shang Lee

IPC分类号： H01L31/12 ,  H01L33/38 ,  H01L33/42

CPC分类号： H01L33/42 ,  H01L33/38

摘要： A light-emitting diode (LED) for both AlGaInP- and GaN-based materials needs a good transparent current spreading layer to disseminate electrons or holes from the electrode to the active layer. The present invention utilizes a conductive and transparent ITO (Indium Tin Oxide) thin film with an ultra-thin (to minimize the absorption) composite metallic layer to serve as a good ohmic contact and current spreading layer. The present invention avoids the Schottky contact due to direct deposition of ITO on the semiconductor. For AlGaInP materials, a thick GaP current spreading layer is omitted by the present invention. For GaN-based LEDs with the present invention, semi-transparent Ni/Au contact layer is avoided. Therefore, the light extraction of LED can be dramatically improved by the present invention. Holes may be etched into the semiconductor cladding layer forming a Photonic Band Gap structure to improve LED light extraction.

摘要翻译： 用于AlGaInP和GaN基材料的发光二极管（LED）需要良好的透明电流扩散层，以将电极或空穴从电极传播到有源层。 本发明利用具有超薄（使吸收最小化）复合金属层的导电和透明ITO（氧化铟锡）薄膜作为良好的欧姆接触电流扩展层。 本发明避免了由于在半导体上直接沉积ITO引起的肖特基接触。 对于AlGaInP材料，本发明省略了厚GaP电流扩散层。 对于本发明的GaN系LED，可以避免半透明的Ni / Au接触层。 因此，通过本发明可以显着提高LED的光提取。 可以将孔蚀刻到形成光子带隙结构的半导体包层中以改善LED光提取。